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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    SPS02N60C3 SPS02N60C3 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ no Obsolete 1 (Unlimited) 3 Through Hole RoHS Compliant Lead Free 3 AVALANCHE RATED TO-251-3 Stub Leads, IPak Unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 Single 25W 6 ns 600V 25W Tc 1.8A 3Ohm 68 ns SILICON N-Channel 3 Ω @ 1.1A, 10V 3.9V @ 80μA 200pF @ 25V 12.5nC @ 10V 3ns 12 ns 20V 650V 650V 3 V 1.8A Tc 5.4A 50 mJ 10V ±20V
    IRFH7936TR2PBF IRFH7936TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2013 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.2324mm RoHS Compliant Lead Free No 8 8-PowerTDFN No SVHC 950μm 5mm 4.8MOhm Surface Mount MOSFET (Metal Oxide) 3.1W Single 3.1W 17 ns 4.8mOhm 8-PQFN (5x6) 21 ns 24A 19 ns N-Channel 4.8mOhm @ 20A, 10V 2.35V @ 50μA 2360pF @ 15V 26nC @ 4.5V 12ns 7 ns 20V 30V 1.8 V 20A Ta 54A Tc 30V 2.36nF 4.8 mΩ
    IRFS5615TRLPBF IRFS5615TRLPBF Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2008 Obsolete 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.652mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 144W 8.9 ns 5V 144W Tc 33A AMPLIFIER 0.042Ohm 17.2 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 23.1ns 13.1 ns 20V 150V 33A Tc 10V ±20V
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    		 download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm 1.7MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 375W 65 ns 2.5V 375W Tc 343A 97 ns N-Channel 1.7m Ω @ 195A, 10V 2.5V @ 250μA 10315pF @ 25V 162nC @ 4.5V 827ns 355 ns 20V 40V 195A Tc 4.5V 10V ±20V
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    		 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 120A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 4MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 89W 14 ns 2V 89W Tc 33 ns 120A SWITCHING 5.8 ns SILICON N-Channel 4m Ω @ 15A, 10V 2.45V @ 250μA 2830pF @ 10V 31nC @ 4.5V 14ns 16 ns 20V 20V 120A Tc 460A 460 mJ 4.5V 10V ±20V
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    		 Through Hole Tube 2005 HEXFET® Obsolete 1 (Unlimited) RoHS Compliant Lead Free 17A No 3 TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) 1 Single 140W 9.7 ns 110W Tc 17A 17 ns N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 32ns 8.9 ns 30V 200V 17A Tc 10V ±30V
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    		 14 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 62A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) 1 Single 120W 12 ns 120W Tc 62A 55 ns N-Channel 12.6m Ω @ 48A, 10V 4V @ 250μA 3270pF @ 25V 130nC @ 10V 80ns 49 ns 20V 75V 62A Tc 10V ±20V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 150°C -55°C 4.9784mm ROHS3 Compliant Lead Free 6.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 4.05mm Surface Mount 80V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 6.3 mm 2.5W 13 ns 4V 2.5W Ta 6.3A SWITCHING 0.029Ohm 44 ns N-Channel 29m Ω @ 3.8A, 10V 4V @ 250μA 1680pF @ 25V 57nC @ 10V 12ns 16 ns 20V 80V 80V 4 V 6.3A Ta 50A 96 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free 87A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 6.3MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 79mW 13 ns 2.25V 79W Tc 24 ns 87A SWITCHING 16 ns SILICON N-Channel 6.3m Ω @ 21A, 10V 2.25V @ 250μA 2130pF @ 15V 26nC @ 4.5V 41ns 4.7 ns 20V 30V 20 V 42A 87A Tc 60 mJ 4.5V 10V ±20V
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    		 download 15 Weeks Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 160W 17 ns 160W Tc 59A SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
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    		 download Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 106A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 7MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 16 ns 4V 93 ns 200W Tc 106A SWITCHING 68 ns SILICON N-Channel 7m Ω @ 82A, 10V 4V @ 250μA 5310pF @ 25V 220nC @ 10V 140ns 120 ns 20V 75V 75V 4 V 75A 106A Tc 550A 10V ±20V
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    		 download 52 Weeks Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 60A 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 32MOhm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 320W 16 ns 5V 3.8W Ta 230W Tc 60A SWITCHING 28 ns SILICON N-Channel 32m Ω @ 36A, 10V 5V @ 250μA 2770pF @ 25V 89nC @ 10V 47ns 25 ns 30V 150V 150V 5 V 51A Tc 240A 470 mJ 10V ±30V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 84A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 8.5mOhm Surface Mount -55°C~175°C TJ 12V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 88W 11 ns 1.9V 88W Tc 84A SWITCHING 21 ns SILICON N-Channel 8.5m Ω @ 15A, 4.5V 1.9V @ 250μA 2490pF @ 6V 41nC @ 5V 14ns 17 ns 12V 12V 12V 1.9 V 84A Tc 2.8V 4.5V ±12V
    IPB055N03LGATMA1 IPB055N03LGATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W 6.7 ns 68W Tc 50A SWITCHING 0.0078Ohm 25 ns SILICON N-Channel 5.5m Ω @ 30A, 10V 2.2V @ 250μA 3200pF @ 15V 31nC @ 10V 5.2ns 4 ns 20V 50A Tc 30V 60 mJ 4.5V 10V ±20V
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    		 download 52 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 56W 5.5 ns 30V 56W Tc 50A SWITCHING 0.0095Ohm 21 ns SILICON N-Channel 6.5m Ω @ 30A, 10V 2.2V @ 250μA 2400pF @ 15V 23nC @ 10V 4.2ns 3.4 ns 20V 50A Tc 60 mJ 4.5V 10V ±20V
    IRFS4620PBF IRFS4620PBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Single 144W 13.4 ns 5V 144W Tc 24A 25.4 ns N-Channel 77.5m Ω @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 22.4ns 14.8 ns 20V 200V 200V 5 V 24A Tc 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 91W Tc SWITCHING 0.011Ohm 55V SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 50μA 1720pF @ 25V 60nC @ 10V 42A 42A Tc 55V 250A 110 mJ 10V ±20V
    IRFH4210DTRPBF IRFH4210DTRPBF Infineon Technologies $0.00
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    		 download Surface Mount Digi-Reel® 2013 HEXFET® Discontinued 1 (Unlimited) EAR99 6mm ROHS3 Compliant Lead Free No 5 8-PowerTDFN No SVHC 900μm 5mm 1.1MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 3.5W 19 ns 1.6V 3.5W Ta 125W Tc 44A 24 ns N-Channel 1.1m Ω @ 50A, 10V 2.1V @ 100μA 4812pF @ 13V 77nC @ 10V 45ns 16 ns 20V 44A Ta 25V 4.5V 10V ±20V
    IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2009 OptiMOS™ yes Active 1 (Unlimited) 3 10mm ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant 9.25mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 DRAIN Halogen Free Single 79W 10 ns 60V 79W Tc 80A 0.0064Ohm 50 ns SILICON N-Channel 6.7m Ω @ 80A, 10V 2.2V @ 40μA 5680pF @ 25V 72nC @ 10V 16V 80A Tc 4.5V 10V ±16V
    IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 62.5W 9 ns 650V 62.5W Tc 6A SWITCHING 0.66Ohm 40 ns SILICON N-Channel 660m Ω @ 3.2A, 10V 4.5V @ 200μA 543pF @ 100V 20nC @ 10V 8ns 10 ns 20V 6A 6A Tc 10V ±20V
    IPI70N10S312AKSA1 IPI70N10S312AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 17 ns 100V 125W Tc 70A 0.0116Ohm 25 ns SILICON N-Channel 11.6m Ω @ 70A, 10V 4V @ 83μA 4355pF @ 25V 66nC @ 10V 8ns 20V 70A Tc 280A 410 mJ 10V ±20V
    IPB80N04S2L03ATMA1 IPB80N04S2L03ATMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING YES R-PSSO-G2 1 DRAIN Halogen Free Single 300W 19 ns 40V 300W Tc 80A 77 ns SILICON N-Channel 3.1m Ω @ 80A, 10V 2V @ 250μA 6000pF @ 25V 213nC @ 10V 50ns 27 ns 20V 40V 80A Tc 810 mJ 4.5V 10V ±20V
    IPD30N03S2L07ATMA1 IPD30N03S2L07ATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 10 ns 136W Tc 30A 0.0098Ohm 40 ns SILICON N-Channel 6.7m Ω @ 30A, 10V 2V @ 85μA 1900pF @ 25V 68nC @ 10V 30ns 16 ns 20V 30A Tc 30V 120A 250 mJ 4.5V 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant 3 ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 47W Tc 19A 0.085Ohm 55V SILICON N-Channel 64m Ω @ 13A, 10V 2V @ 14μA 354pF @ 25V 13nC @ 10V 19A Tc 55V 76A 4.5V 10V ±20V
    IPI80N06S207AKSA1 IPI80N06S207AKSA1 Infineon Technologies $0.00
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    		 download Tube 2010 OptiMOS™ Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 250W Tc N-Channel 6.6m Ω @ 68A, 10V 4V @ 180μA 3400pF @ 25V 110nC @ 10V 80A Tc 55V 10V ±20V
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    		 download 6 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 70 ns 900V 104W Tc 6.9A 0.8Ohm 400 ns SILICON N-Channel 800m Ω @ 4.1A, 10V 3.5V @ 460μA 1100pF @ 100V 42nC @ 10V 20ns 32 ns 20V 6.9A Tc 15A 157 mJ 10V ±20V
    IPI80N03S4L03AKSA1 IPI80N03S4L03AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 10.36mm RoHS Compliant 3 ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.52mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED NO 1 Halogen Free Single 136W 14 ns 30V 136W Tc 80A 0.0027Ohm 62 ns SILICON N-Channel 2.7m Ω @ 80A, 10V 2.2V @ 90μA 9750pF @ 25V 140nC @ 10V 9ns 13 ns 16V 30V 80A Tc 260 mJ 4.5V 10V ±16V
    IRFS31N20DTRL IRFS31N20DTRL Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 31A TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE DRAIN 3.1W Ta 200W Tc 31A SWITCHING 0.082Ohm SILICON N-Channel 82m Ω @ 18A, 10V 5.5V @ 250μA 2370pF @ 25V 110nC @ 10V 38ns 31A Tc 124A 420 mJ 10V ±30V
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    		 Tape & Reel (TR) 2005 HEXFET® Obsolete 1 (Unlimited) 8 Non-RoHS Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 8541.29.00.95 e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING SILICON N-Channel 14m Ω @ 15A, 4.5V 3V @ 250μA 1801pF @ 10V 26nC @ 5V 10.8A 10.8A Ta 30V 4.5V ±20V
    BSC050N03MSGATMA1 BSC050N03MSGATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Tin 8 AVALANCHE RATED 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 50W 2.5W Ta 50W Tc 16A SWITCHING 0.0063Ohm 30V SILICON N-Channel 5m Ω @ 30A, 10V 2V @ 250μA 3600pF @ 15V 46nC @ 10V 7.2ns 16V 16A Ta 80A Tc 30V 320A 35 mJ 4.5V 10V ±20V