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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    SPP20N60S5 SPP20N60S5 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole 8.64mm RoHS Compliant Contains Lead Tin 20A No 3 AVALANCHE RATED TO-220-3 No SVHC 4.4mm 10.26mm Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE 3 FET General Purpose Power 1 TO-220AB DRAIN Halogen Free Single 208W 120 ns 4.5V 600V 208W Tc 20A SWITCHING 140 ns SILICON N-Channel 190m Ω @ 13A, 10V 5.5V @ 1mA 3000pF @ 25V 103nC @ 10V 25ns 30 ns 20V 600V 600V 4.5 V 20A Tc 40A 690 mJ 10V ±20V
    SPP100N03S2-03 SPP100N03S2-03 Infineon Technologies $0.00
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    		 download Through Hole Tube 2003 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 Non-RoHS Compliant Contains Lead 100A AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e0 Tin/Lead (Sn/Pb) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W Tc 100A 0.0033Ohm SILICON N-Channel 3.3m Ω @ 80A, 10V 4V @ 250μA 7020pF @ 25V 150nC @ 10V 40ns 100A Tc 400A 810 mJ 10V ±20V
    IPI120N04S402AKSA1 IPI120N04S402AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 27 ns 40V 158W Tc 120A 0.0021Ohm 30 ns SILICON N-Channel 2.1m Ω @ 100A, 10V 4V @ 110μA 10740pF @ 25V 134nC @ 10V 16ns 20V 120A Tc 480A 480 mJ 10V ±20V
    IPP50R250CPXKSA1 IPP50R250CPXKSA1 Infineon Technologies $0.00
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    		 download 40 Weeks Through Hole 2008 yes Not For New Designs 1 (Unlimited) 3 EAR99 150°C -55°C 10.36mm ROHS3 Compliant Lead Free 3 TO-220 15.95mm 4.57mm ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 114W 1 ISOLATED Halogen Free N-CHANNEL Single 114W 35 ns 500V 250mOhm 13A SWITCHING METAL-OXIDE SEMICONDUCTOR 80 ns 14ns 11 ns 20V 500V 500V 1.42nF 250 mΩ
    IRFSL7530PBF IRFSL7530PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2004 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Surface Mount 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 DRAIN Single 375W 52 ns 3.7V 375W Tc 195A SWITCHING 0.002Ohm 172 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13703pF @ 25V 411nC @ 10V 141ns 104 ns 20V 60V 195A Tc 760A 6V 10V ±20V
    AUIRFS3607TRL AUIRFS3607TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 140W Tc SWITCHING 0.009Ohm 75V SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 80A 80A Tc 75V 310A 120 mJ 10V ±20V
    IPB50R199CPATMA1 IPB50R199CPATMA1 Infineon Technologies $0.00
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    		 download 8 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 ROHS3 Compliant Contains Lead No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 35 ns 500V 139W Tc 17A SWITCHING 80 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1800pF @ 100V 45nC @ 10V 14ns 10 ns 20V 17A Tc 550V 40A 10V ±20V
    IPL65R210CFDAUMA1 IPL65R210CFDAUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 151W Tc 16.6A SWITCHING 0.21Ohm SILICON N-Channel 210m Ω @ 7.3A, 10V 4.5V @ 700μA 1850pF @ 100V 68nC @ 10V 16.6A Tc 53A 10V ±20V
    IRL40S212 IRL40S212 Infineon Technologies $0.00
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    		 download 17 Weeks Surface Mount Tube 2013 StrongIRFET™ Not For New Designs 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Single 39 ns 2.4V 231W Tc 195A 88 ns N-Channel 1.9m Ω @ 100A, 10V 2.4V @ 150μA 8320pF @ 25V 137nC @ 4.5V 20V 195A Tc 40V 4.5V 10V ±20V
    IPA029N06NXKSA1 IPA029N06NXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2012 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 16 ns 60V 38W Tc 84A SWITCHING 0.0029Ohm 30 ns SILICON N-Channel 2.9m Ω @ 84A, 10V 3.3V @ 75μA 5125pF @ 30V 66nC @ 10V 15ns 11 ns 20V 84A Tc 140 mJ 6V 10V ±20V
    IRFSL7430PBF IRFSL7430PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC Surface Mount 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 3.9V 375W Tc 195A N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 195A Tc 40V 6V 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2009 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 16.51mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 375W 16 ns 375W Tc 270mA SWITCHING 0.0025Ohm 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A 195A Tc 1080A 10V ±20V
    IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 188W 25 ns 60V 188W Tc 120A 0.0024Ohm 50 ns SILICON N-Channel 2.8m Ω @ 100A, 10V 4V @ 140μA 15750pF @ 25V 195nC @ 10V 5ns 10 ns 20V 60V 120A Tc 480A 560 mJ 10V ±20V
    IPB180P04P403ATMA1 IPB180P04P403ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2002 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) 6 EAR99 10mm ROHS3 Compliant Contains Lead 7 TO-263-7, D2Pak (6 Leads + Tab) not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 DRAIN Halogen Free Single 150W 48 ns -40V 150W Tc 180A 0.0028Ohm 72 ns SILICON P-Channel 2.8m Ω @ 100A, 10V 4V @ 410μA 17640pF @ 25V 250nC @ 10V 31ns 81 ns 20V -40V 180A Tc 40V 90 mJ 10V ±20V
    AUIRFB8407 AUIRFB8407 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 3.43mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 230W 19 ns 3V 230W Tc 195A 78 ns N-Channel 2m Ω @ 100A, 10V 4V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 3 V 195A Tc 40V 10V ±20V
    IPI120N04S401AKSA1 IPI120N04S401AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 34 ns 40V 188W Tc 120A 0.0019Ohm 41 ns SILICON N-Channel 1.9m Ω @ 100A, 10V 4V @ 140μA 14000pF @ 25V 176nC @ 10V 16ns 36 ns 20V 120A Tc 480A 750 mJ 10V ±20V
    AUIRFS8405TRL AUIRFS8405TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED YES FET General Purpose Power Single 163W Tc N-Channel 2.3m Ω @ 100A, 10V 3.9V @ 100μA 5193pF @ 25V 161nC @ 10V 120A 120A Tc 40V 10V ±20V
    IRF7805PBF IRF7805PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 13A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 11MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 FET General Purpose Power 1 Single 2.5W 16 ns 3V 2.5W Ta 13A SWITCHING 38 ns SILICON N-Channel 11m Ω @ 7A, 4.5V 3V @ 250μA 31nC @ 5V 20ns 16 ns 12V 30V 3 V 13A Ta 4.5V ±12V
    IRF7455PBF IRF7455PBF Infineon Technologies $0.00
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    		 download 22 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0075Ohm 30V SILICON N-Channel 7.5m Ω @ 15A, 10V 2V @ 250μA 3480pF @ 25V 56nC @ 5V 15A 15A Ta 30V 120A 200 mJ 2.8V 10V ±12V
    IRF7469PBF IRF7469PBF Infineon Technologies $0.00
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 17m Ω @ 9A, 10V 3V @ 250μA 2000pF @ 20V 23nC @ 4.5V 9A Ta 40V 4.5V 10V ±20V
    IRF7832PBF IRF7832PBF Infineon Technologies $0.00
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    		 download 16 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~155°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.004Ohm 30V SILICON N-Channel 4m Ω @ 20A, 10V 2.32V @ 250μA 4310pF @ 15V 51nC @ 4.5V 20A 20A Ta 30V 160A 260 mJ 4.5V 10V ±20V
    IRF7493PBF IRF7493PBF Infineon Technologies $0.00
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    		 download 12 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Tc SWITCHING 0.015Ohm 80V SILICON N-Channel 15m Ω @ 5.6A, 10V 4V @ 250μA 1510pF @ 25V 53nC @ 10V 9.3A 9.3A Tc 80V 74A 180 mJ 10V ±20V
    IRFR120NPBF IRFR120NPBF Infineon Technologies $0.00
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    		 download 39 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 48W Tc SWITCHING 0.21Ohm 100V SILICON N-Channel 210m Ω @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 9.4A 9.4A Tc 100V 38A 91 mJ 10V ±20V
    IRF7452PBF IRF7452PBF Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tube 2001 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 4.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 60mOhm Surface Mount -55°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 2.5W 9.5 ns 5.5V 2.5W Ta 120 ns 4.5A SWITCHING 16 ns SILICON N-Channel 60m Ω @ 2.7A, 10V 5.5V @ 250μA 930pF @ 25V 50nC @ 10V 11ns 13 ns 30V 100V 100V 5.5 V 4.5A Ta 36A 200 mJ 10V ±30V
    IRFR2407PBF IRFR2407PBF Infineon Technologies $0.00
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 110W Tc N-Channel 26m Ω @ 25A, 10V 4V @ 250μA 2400pF @ 25V 110nC @ 10V 42A Tc 75V 10V ±20V
    IRFR5305TRRPBF IRFR5305TRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.3886mm ROHS3 Compliant Lead Free -31A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.73mm Surface Mount -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W 14 ns 110W Tc -31A SWITCHING 0.065Ohm 39 ns P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V 31A Tc 55V 280 mJ 10V ±20V
    IRLR2905PBF IRLR2905PBF Infineon Technologies $0.00
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 20A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
    IRFR3711PBF IRFR3711PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 6.7056mm RoHS Compliant Lead Free 110A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 120W 12 ns 2.5W Ta 120W Tc 110A SWITCHING 0.0065Ohm 17 ns SILICON N-Channel 6.5m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 220ns 12 ns 20V 20V 3 V 100A Tc 440A 460 mJ 4.5V 10V ±20V
    IRFZ44NSTRRPBF IRFZ44NSTRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 94W Tc SWITCHING 0.0175Ohm 55V SILICON N-Channel 17.5m Ω @ 25A, 10V 4V @ 250μA 1470pF @ 25V 63nC @ 10V 49A 49A Tc 55V 160A 150 mJ 10V ±20V
    IRLL2705PBF IRLL2705PBF Infineon Technologies $0.00
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    		 download 18 Weeks Tube 1997 HEXFET® Discontinued 1 (Unlimited) 4 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 FET General Purpose Power Not Qualified 1 SINGLE DRAIN 1W Ta 0.051Ohm 55V SILICON N-Channel 40m Ω @ 3.8A, 10V 2V @ 250μA 870pF @ 25V 48nC @ 10V 5.2A 3.8A Ta 55V 30A 110 mJ 4V 10V ±16V