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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Shape | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Color | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF9317PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 19 ns | -1.8V | 2.5W Ta | 50 ns | -16A | SWITCHING | 0.0066Ohm | 160 ns | SILICON | P-Channel | 6.6m Ω @ 16A, 10V | 2.4V @ 50μA | 2820pF @ 15V | 92nC @ 10V | 64ns | 120 ns | 20V | -30V | -1.8 V | 16A Ta | 30V | 330 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF5805TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 3mm | ROHS3 Compliant | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 990.6μm | 1.7018mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | Other Transistors | 1 | Single | 2W | 11 ns | -2.5V | 2W Ta | -3.8A | 90 ns | P-Channel | 98m Ω @ 3.8A, 10V | 2.5V @ 250μA | 511pF @ 25V | 17nC @ 10V | 14ns | 49 ns | 20V | -30V | -30V | -2.5 V | 3.8A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.668mm | RoHS Compliant | Contains Lead | 17A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.699mm | 9.65mm | 70mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 4.9 ns | 3.8W Ta 45W Tc | 17A | SWITCHING | 19 ns | SILICON | N-Channel | 70m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | 27 ns | 20V | 55V | 17A Tc | 68A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA50R280CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 30.4W Tc | SWITCHING | 0.28Ohm | 500V | SILICON | N-Channel | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 773pF @ 100V | 32.6nC @ 10V | Super Junction | 13A Tc | 500V | 42.9A | 231 mJ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI020N06NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2008 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 214W | 24 ns | 60V | 3W Ta 214W Tc | 120A | SWITCHING | 0.002Ohm | 51 ns | SILICON | N-Channel | 2m Ω @ 100A, 10V | 2.8V @ 143μA | 7800pF @ 30V | 106nC @ 10V | 45ns | 19 ns | 20V | 60V | 29A | 29A Ta 120A Tc | 480A | 420 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA50R190CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 32W Tc | SWITCHING | 0.19Ohm | 500V | SILICON | N-Channel | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 1137pF @ 100V | 47.2nC @ 10V | Super Junction | 18.5A Tc | 500V | 63A | 339 mJ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7437PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2007 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 19 ns | 3V | 230W Tc | 30 ns | 195A | SWITCHING | 40V | 78 ns | SILICON | N-Channel | 1.8m Ω @ 100A, 10V | 3.9V @ 150μA | 7330pF @ 25V | 225nC @ 10V | 70ns | 53 ns | 20V | 3 V | 195A Tc | 40V | 802 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR4292 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2015 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | YES | FET General Purpose Power | Single | 100W Tc | N-Channel | 345m Ω @ 5.6A, 10V | 5V @ 50μA | 705pF @ 25V | 20nC @ 10V | 9.3A | 9.3A Tc | 250V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7805Q | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | RoHS Compliant | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | YES | R-PDSO-G8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.011Ohm | 30V | SILICON | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 31nC @ 5V | 13A | 13A Ta | 30V | 100A | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF5210S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | Other Transistors | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W Ta 170W Tc | SWITCHING | 0.06Ohm | 100V | SILICON | P-Channel | 60m Ω @ 38A, 10V | 4V @ 250μA | 2780pF @ 25V | 230nC @ 10V | 38A | 38A Tc | 100V | 140A | 120 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLU024Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 35W | 35W Tc | 16A | SWITCHING | 0.058Ohm | 55V | SILICON | N-Channel | 58m Ω @ 9.6A, 10V | 3V @ 250μA | 380pF @ 25V | 9.9nC @ 5V | 16V | 16A Tc | 55V | 64A | 25 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD07N20GBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Contains Lead | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Not Halogen Free | 40W | 10 ns | 200V | 40W Tc | 7A | 0.4Ohm | 55 ns | SILICON | N-Channel | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 530pF @ 25V | 31.5nC @ 10V | 40ns | 30 ns | 20V | 7A | 7A Tc | 28A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| V501445MHPSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Rectangular | 2012 | Active | Not Applicable | Natural | 1.929 49.00mm | RoHS Compliant | Lead Free | 1.929 49.00mm | 1.811 46.00mm | Mount | Not Halogen Free | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V611480NHPSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Rectangular | 2012 | Active | Not Applicable | Natural | 3.642 92.51mm | RoHS Compliant | Lead Free | 2.165 55.00mm | Mount | Not Halogen Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V501460MHPSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Rectangular | 2012 | Active | Not Applicable | Natural | 1.929 49.00mm | 1.929 49.00mm | 1.811 46.00mm | Mount | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS670S2LH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 540mA | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | 3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | 9 ns | 55V | 360mW Ta | 540mA | SWITCHING | 0.825Ohm | 21 ns | SILICON | N-Channel | 650m Ω @ 270mA, 10V | 2V @ 2.7μA | 75pF @ 25V | 2.26nC @ 10V | 25ns | 24 ns | 20V | 0.54A | 540mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSS214NWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | SC-70, SOT-323 | 1mm | 1.25mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | 1 | Single | 500mW | 4.1 ns | 950mV | 20V | 500mW Ta | 1.5A | 150°C | 6.8 ns | SILICON | N-Channel | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 143pF @ 10V | 0.8nC @ 5V | 7.8ns | 1.4 ns | 12V | 20V | 1.5A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF4905 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.66mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Other Transistors | 1 | TO-220AB | DRAIN | Single | 200W | 18 ns | -2V | 200W Tc | 74A | SWITCHING | 0.02Ohm | 61 ns | SILICON | P-Channel | 20m Ω @ 38A, 10V | 4V @ 250μA | 3400pF @ 25V | 180nC @ 10V | 99ns | 96 ns | 20V | -55V | 74A Tc | 55V | 260A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP3703PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 210A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 230W | 18 ns | 3.8W Ta 230W Tc | 120 ns | 210A | SWITCHING | 53 ns | SILICON | N-Channel | 2.8m Ω @ 76A, 10V | 4V @ 250μA | 8250pF @ 25V | 209nC @ 10V | 123ns | 24 ns | 20V | 30V | 30V | 4 V | 90A | 210A Tc | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP60R190P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | Halogen Free | 151W | 15 ns | 600V | 151W Tc | 20.2A | SWITCHING | 45 ns | SILICON | N-Channel | 190m Ω @ 7.6A, 10V | 4.5V @ 630μ | 1750pF @ 100V | 11nC @ 10V | 8ns | 7 ns | 20V | 20.2A Tc | 57A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3004PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 1.75MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | TO-220AB | DRAIN | Single | 380W | 23 ns | 4V | 380W Tc | 340A | SWITCHING | 90 ns | SILICON | N-Channel | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 9200pF @ 25V | 240nC @ 10V | 220ns | 130 ns | 20V | 40V | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA90R340C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 35W | 70 ns | 900V | 35W Tc | 15A | SWITCHING | 400 ns | SILICON | N-Channel | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 2400pF @ 100V | 94nC @ 10V | 20ns | 25 ns | 30V | 15A Tc | 678 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R099P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 117W Tc | SWITCHING | 0.099Ohm | 600V | SILICON | N-Channel | 99m Ω @ 10.5A, 10V | 4V @ 530μA | 1952pF @ 400V | 45nC @ 10V | 31A Tc | 600V | 100A | 105 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70R360P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | yes | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 59.4W Tc | N-Channel | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 517pF @ 400V | 16.4nC @ 10V | 12.5A Tc | 700V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC076N06NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | 2.5W | 15 ns | 60V | 6.2mOhm | PG-TDSON-8-5 | 2.5W Ta 69W Tc | 50A | 20 ns | N-Channel | 7.6mOhm @ 50A, 10V | 4V @ 35μA | 4000pF @ 30V | 50nC @ 10V | 40ns | 5 ns | 20V | 50A Tc | 60V | 4nF | 10V | ±20V | 7.6 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S4L12ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 6 ns | 60V | 50W Tc | 50A | 25 ns | SILICON | N-Channel | 12m Ω @ 50A, 10V | 2.2V @ 20μA | 2890pF @ 25V | 40nC @ 10V | 2ns | 5 ns | 16V | 50A Tc | 200A | 33 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7413TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 13A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 11mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 1 | 6.3 mm | Single | 2.5W | 8.6 ns | 3V | 2.5W Ta | 110 ns | 13A | 150°C | SWITCHING | 52 ns | SILICON | N-Channel | 11m Ω @ 7.3A, 10V | 3V @ 250μA | 1800pF @ 25V | 79nC @ 10V | 50ns | 46 ns | 20V | 30V | 30V | 3 V | 13A Ta | 260 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRL60HS118 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | 6-VDFN Exposed Pad | 1mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-TSDSON-6 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N6 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 8.4 ns | 1.7V | 11.5W Tc | 18.5A | 175°C | SWITCHING | 9 ns | SILICON | N-Channel | 17m Ω @ 11A, 10V | 2.3V @ 10μA | 660pF @ 25V | 8nC @ 4.5V | 20V | 60V | 18.5A Tc | 56A | 22 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ068N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 60V | 2.1W Ta 46W Tc | 40A | SWITCHING | SILICON | N-Channel | 6.8m Ω @ 20A, 10V | 3.3V @ 20μA | 1500pF @ 30V | 21nC @ 10V | 3ns | 20V | 40A Tc | 160A | 43 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 16A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 115mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 52W | 6.4 ns | 4V | 79W Tc | 190 ns | 16A | SWITCHING | 37 ns | SILICON | N-Channel | 115m Ω @ 10A, 10V | 4V @ 250μA | 640pF @ 25V | 44nC @ 10V | 27ns | 25 ns | 20V | 100V | 100V | 4 V | 16A Tc | 60A | 10V | ±20V |