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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    BSS169H6327XTSA1 BSS169H6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2011 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 2.9mm ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 DUAL GULL WING 3 FET General Purpose Powers 1 Halogen Free Single 360mW 2.9 ns 100V 360mW Ta 170mA 6Ohm 11 ns SILICON N-Channel 6 Ω @ 170mA, 10V 1.8V @ 50μA 68pF @ 25V 2.8nC @ 7V 2.7ns 20V Depletion Mode 170mA Ta 7 pF 0V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 6 EAR99 3mm ROHS3 Compliant Lead Free Tin No 6 SOT-23-6 No SVHC 1.3mm 1.75mm 19MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2W 7.3 ns 1.8V 2W Ta 12 ns 8.2A SWITCHING 9.1 ns SILICON N-Channel 19m Ω @ 8.2A, 10V 2.35V @ 25μA 560pF @ 25V 4.8nC @ 4.5V 15ns 8.2 ns 20V 30V 1.8 V 8.2A Ta 80A 4.5V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 3 AVALANCHE RATED TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 20V 500mW Ta 3.7A SILICON N-Channel 23m Ω @ 3.7A, 2.5V 750mV @ 30μA 1447pF @ 10V 4.7nC @ 2.5V 18ns 8V 2.9A 3.7A Ta 1.8V 2.5V ±8V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2013 SIPMOS® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-236-3, SC-59, SOT-23-3 No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED AEC-Q101 1 SINGLE WITH BUILT-IN DIODE Halogen Free 5 ns -1.5V -100V 500mW Tc 360mA 71 ns SILICON P-Channel 1.8 Ω @ 360mA, 10V 1V @ 170μA 165pF @ 25V 7nC @ 10V 6ns 26 ns 20V 360mA Ta 100V 20 pF 4.5V 10V ±20V
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    		 download Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 481W Tc SWITCHING 0.041Ohm 600V SILICON N-Channel 41m Ω @ 44.4A, 10V 3.5V @ 2.96mA 6530pF @ 10V 290nC @ 10V 77.5A Tc 600V 272A 1954 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 3 HIGH RELIABILITY TO-220-3 not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 16 ns 650V 277.8W Tc 31.2A SWITCHING 0.11Ohm 68 ns SILICON N-Channel 110m Ω @ 12.7A, 10V 4.5V @ 1.3mA 3240pF @ 100V 118nC @ 10V 11ns 6 ns 20V 31.2A Tc 99.6A 845 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 15 ns 3.6W Ta 59W Tc 27A SWITCHING 18 ns SILICON N-Channel 3.1m Ω @ 20A, 10V 2.35V @ 50μA 3180pF @ 10V 41nC @ 10V 33ns 12 ns 20V 30V 1.8 V 50A 27A Ta 120A Tc 400A 4.5V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 1999 CoolMOS™ C7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Halogen Free 600V 227W Tc 50A N-Channel 40m Ω @ 24.9A, 10V 4V @ 1.24mA 4340pF @ 400V 107nC @ 10V 50A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free Tin 13.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 9MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 6.3 mm Single 2.5W 14 ns 1V 2.5W Ta 13.3A SWITCHING 96 ns SILICON N-Channel 9m Ω @ 15A, 4.5V 1V @ 250μA 3780pF @ 16V 62nC @ 5V 36ns 10 ns 12V 30V 30V 1 V 13.3A Ta 4.5V ±12V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 2 (1 Year) 3 SMD/SMT EAR99 6.096mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 939.8μm 5.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.4W 20 ns 1.8V 3.4W Ta 24A SWITCHING 0.0033Ohm 23 ns SILICON N-Channel 3.3m Ω @ 25A, 10V 2.35V @ 100μA 4270pF @ 15V 51nC @ 4.5V 48ns 20 ns 20V 30V 30V 1.8 V 25A 24A Ta 104A Tc 4.5V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 55V 136W Tc 30A 0.0147Ohm SILICON N-Channel 14.7m Ω @ 30A, 10V 4V @ 80μA 1485pF @ 25V 110nC @ 10V 30A Tc 120A 240 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 20.7mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 Halogen Free 278W 20 ns 3.5V 600V 278W Tc 37.9A 150°C 50 ns N-Channel 99m Ω @ 14.5A, 10V 4.5V @ 1.21mA 3330pF @ 100V 70nC @ 10V 10ns 5 ns 20V 600V 37.9A Tc 10V ±20V
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE 176W 13 ns 600V 176W Tc 23.8A SWITCHING 96 ns SILICON N-Channel 160m Ω @ 11.3A, 10V 3.5V @ 750μA 1660pF @ 100V 75nC @ 10V 8 ns 20V 23.8A Tc 70A 497 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 19 ns 75V 300W Tc 120A SWITCHING 70 ns SILICON N-Channel 2.3m Ω @ 100A, 10V 3.8V @ 273μA 14400pF @ 37.5V 206nC @ 10V 26ns 22 ns 20V 120A Tc 480A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2012 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC Through Hole 38.000013g -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 16 ns 4V 375W Tc 195A 118 ns N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 4V 195A Tc 60V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 22 ns 150V 39W Tc 43A SWITCHING 0.0075Ohm 50 ns SILICON N-Channel 7.5m Ω @ 43A, 10V 4V @ 270μA 7280pF @ 75V 93nC @ 10V 25ns 15 ns 20V 43A Tc 172A 1000 mJ 8V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 31A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 39Ohm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W 12 ns 4V 3W Ta 110W Tc 31A SWITCHING 40 ns SILICON N-Channel 39m Ω @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 27ns 13 ns 20V 100V 100V 4 V 31A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 63W 9.7 ns 63W Tc 81A SWITCHING 0.0057Ohm 12 ns SILICON N-Channel 5.7m Ω @ 25A, 10V 2.35V @ 25μA 1470pF @ 13V 15nC @ 4.5V 46ns 8.5 ns 20V 25V 81A Tc 86 mJ 4.5V 10V ±20V
    BSP320SH6327XTSA1 BSP320SH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2007 SIPMOS™ yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power 1 Halogen Free Single 1.8W 11 ns 3V 60V 1.8W Ta 56 ns 2.9A 25 ns SILICON N-Channel 120m Ω @ 2.9A, 10V 4V @ 20μA 340pF @ 25V 12nC @ 10V 25ns 35 ns 20V 2.9A Tj 60 mJ 10V ±20V
    IPD50N04S410ATMA1 IPD50N04S410ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 41W Tc 0.0093Ohm 40V SILICON N-Channel 9.3m Ω @ 50A, 10V 4V @ 15μA 1430pF @ 25V 18.2nC @ 10V 50A 50A Tc 40V 200A 42 mJ 10V ±20V
    IPS70R950CEAKMA1 IPS70R950CEAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-251-3 Stub Leads, IPak not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 700V 68W Tc 7.4A SWITCHING 0.95Ohm SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 150μA 328pF @ 100V 15.3nC @ 10V Super Junction 7.4A Tc 12A 50 mJ 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 34.7W Tc SWITCHING 0.75Ohm 700V SILICON N-Channel 750m Ω @ 1.4A, 10V 3.5V @ 70μA 306pF @ 400V 8.3nC @ 400V 6.5A Tc 700V 15.4A 10V ±16V
    BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant Lead Free Silver 3-WDSON Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e4 BOTTOM NO LEAD 3 R-MBCC-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 2.8W Ta 89W Tc 35A SWITCHING 0.0015Ohm SILICON N-Channel 1.5m Ω @ 30A, 10V 4V @ 250μA 12000pF @ 20V 142nC @ 10V 6.4ns 20V 180A 36A Ta 180A Tc 400A 290 mJ 10V ±20V
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    		 download 26 Weeks Surface Mount Tube 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 14 ns 2V 110W Tc 59A SWITCHING 31 ns SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 66ns 35 ns 20V 55V 42A 42A Tc 240A 55 mJ 10V ±20V
    IRL40B212 IRL40B212 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 Unknown 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Single 39 ns 2.4V 231W Tc 195A 88 ns N-Channel 1.9m Ω @ 100A, 10V 2.4V @ 150μA 8320pF @ 25V 137nC @ 4.5V 20V 195A Tc 40V 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.826mm 2.3Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 330W 13 ns 4V 300W Tc 84 ns 270A SWITCHING 130 ns SILICON N-Channel 2.3m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 40V 4 V 75A Tc 540 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 1998 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6mm ROHS3 Compliant Lead Free 20A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.8mm 53mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 42W 11 ns 2V 54W Tc 290 ns 23A SWITCHING 2kV 39 ns SILICON N-Channel 44m Ω @ 12A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 62 ns 16V 100V 100V 2 V 23A Tc 4V 10V ±16V
    SPP15P10PLHXKSA1 SPP15P10PLHXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2007 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 128W 7.6 ns -100V 128W Tc 15A 0.2Ohm 50 ns SILICON P-Channel 200m Ω @ 11.3A, 10V 2V @ 1.54mA 1490pF @ 25V 62nC @ 10V 21ns 29 ns 20V 15A Tc 100V 60A 4.5V 10V ±20V
    IPB025N08N3GATMA1 IPB025N08N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 28 ns 80V 300W Tc 120A SWITCHING 0.0025Ohm 86 ns SILICON N-Channel 2.5m Ω @ 100A, 10V 3.5V @ 270μA 14200pF @ 40V 206nC @ 10V 73ns 33 ns 20V 120A Tc 480A 6V 10V ±20V
    IRLR8729TRPBF IRLR8729TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 55W 10 ns 55W Tc 58A SWITCHING 0.0089Ohm 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V