Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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AUIRF8739L2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | DirectFET™ Isometric L8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 3.8W Ta 340W Tc | 545A | N-Channel | 0.6m Ω @ 195A, 10V | 3.9V @ 250μA | 17890pF @ 25V | 562nC @ 10V | 57A Ta 545A Tc | 40V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRF7669L2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 9 | EAR99 | ROHS3 Compliant | Lead Free | No | 15 | HIGH RELIABILITY | DirectFET™ Isometric L8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N9 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W | 15 ns | 3.3W Ta 100W Tc | 114A | SWITCHING | 0.0044Ohm | 27 ns | SILICON | N-Channel | 4.4m Ω @ 68A, 10V | 5V @ 250μA | 5660pF @ 25V | 120nC @ 10V | 30ns | 14 ns | 20V | 100V | 375A | 19A Ta 114A Tc | 460A | 850 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IAUT300N08S5N012ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Tape & Reel (TR) | 2016 | OptiMOS™ | Active | 1 (Unlimited) | ROHS3 Compliant | 8-PowerSFN | 2.4mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | PG-HSOF-8 | NOT SPECIFIED | NOT SPECIFIED | 1 | 375W | 31 ns | 375W Tc | 300A | 175°C | 69 ns | N-Channel | 1.2m Ω @ 100A, 10V | 3.8V @ 275μA | 16250pF @ 40V | 231nC @ 10V | 20V | 80V | 300A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB044N15N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | not_compliant | 4.5mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G6 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W | 19 ns | 300W Tc | 174A | 175°C | SWITCHING | 0.0044Ohm | 24 ns | SILICON | N-Channel | 4.4m Ω @ 87A, 10V | 4.6V @ 264μA | 8000pF @ 75V | 100nC @ 10V | 20V | 150V | 174A Tc | 696A | 470 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
SPB18P06PGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Lead Free | -18.6A | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.5mm | 4.4mm | Surface Mount | -55°C~175°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | Not Qualified | 1 | DRAIN | Single | 81.1W | 12 ns | -3V | 81.1W Ta | -18.7A | 175°C | 25 ns | SILICON | P-Channel | 130m Ω @ 13.2A, 10V | 4V @ 1mA | 860pF @ 25V | 28nC @ 10V | 5.8ns | 11 ns | 20V | -60V | -3 V | 18.7A Ta | 60V | 74.8A | 10V | ±20V | ||||||||||||||||||||||||||
BSC025N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | 8 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 10 ns | 30V | 2.5W Ta 83W Tc | 100A | SWITCHING | 0.0036Ohm | 36 ns | SILICON | N-Channel | 2.5m Ω @ 30A, 10V | 2.2V @ 250μA | 6100pF @ 15V | 74nC @ 10V | 6.2ns | 6 ns | 20V | 25A | 25A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFR7746TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | Active | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.39mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 7.9 ns | 3.7V | 99W Tc | 56A | 34 ns | N-Channel | 11.2m Ω @ 35A, 10V | 3.7V @ 100μA | 3107pF @ 25V | 89nC @ 10V | 30ns | 21 ns | 20V | 56A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSC0901NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 5.4 ns | 30V | 2.5W Ta 69W Tc | 100A | SWITCHING | 0.0024Ohm | 28 ns | SILICON | N-Channel | 1.9m Ω @ 30A, 10V | 2.2V @ 250μA | 2800pF @ 15V | 44nC @ 10V | 6.8ns | 4.8 ns | 20V | 28A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFR6215TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.295Ohm | 150V | SILICON | P-Channel | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 13A | 13A Tc | 150V | 44A | 310 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPDH4N03LAG | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | OptiMOS™ | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | Lead Free | 90A | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | 25V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | GULL WING | 260 | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | TO-252AA | DRAIN | Single | 94W | 94W Tc | 90A | SWITCHING | 0.0042Ohm | 29 ns | SILICON | N-Channel | 4.2m Ω @ 60A, 10V | 2V @ 40μA | 3200pF @ 15V | 26nC @ 5V | 7ns | 4.6 ns | 20V | 25V | 90A Tc | 360A | 150 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRLR3114ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 4.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 25 ns | 1V | 140W Tc | 130mA | SWITCHING | 33 ns | SILICON | N-Channel | 4.9m Ω @ 42A, 10V | 2.5V @ 100μA | 3810pF @ 25V | 56nC @ 4.5V | 140ns | 50 ns | 16V | 40V | 1 V | 42A | 42A Tc | 500A | 260 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||
IPA037N08N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 41W | 23 ns | 80V | 41W Tc | 75A | SWITCHING | 46 ns | SILICON | N-Channel | 3.7m Ω @ 75A, 10V | 3.5V @ 155μA | 8110pF @ 40V | 117nC @ 10V | 49ns | 13 ns | 20V | 75A Tc | 680 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPC50N04S5L5R5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W Tc | 0.0079Ohm | 40V | SILICON | N-Channel | 5.5m Ω @ 25A, 10V | 2V @ 13μA | 1209pF @ 25V | 23nC @ 10V | 50A | 50A Tc | 40V | 200A | 30 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IRF7401TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 8.7A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 22mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 6.3 mm | Single | 2.5W | 13 ns | 700mV | 2.5W Ta | 8.7A | SWITCHING | 65 ns | SILICON | N-Channel | 22m Ω @ 4.1A, 4.5V | 700mV @ 250μA | 1600pF @ 15V | 48nC @ 4.5V | 72ns | 92 ns | 12V | 20V | 20V | 700 mV | 8.7A Ta | 35A | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
IRFR3303TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 33A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | 31mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 57W | 11 ns | 57W Tc | 33A | SWITCHING | 16 ns | SILICON | N-Channel | 31m Ω @ 18A, 10V | 4V @ 250μA | 750pF @ 25V | 29nC @ 10V | 99ns | 28 ns | 20V | 30V | 20A | 33A Tc | 95 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
BSC22DN20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 34W | 3V | 200V | 34W Tc | 7A | SWITCHING | 0.225Ohm | SILICON | N-Channel | 225m Ω @ 3.5A, 10V | 4V @ 13μA | 430pF @ 100V | 5.6nC @ 10V | 4ns | 20V | 7A | 7A Tc | 30 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRLR6225TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 4MOhm | Surface Mount | -50°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 63W | 9.7 ns | 63W Tc | 100A | SWITCHING | 63 ns | SILICON | N-Channel | 4m Ω @ 21A, 4.5V | 1.1V @ 50μA | 3770pF @ 10V | 72nC @ 4.5V | 37ns | 52 ns | 12V | 20V | 800 mV | 42A | 100A Tc | 400A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||
BSF030NE2LQXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | OptiMOS™ | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Silver | No | 6 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e4 | BOTTOM | 2 | R-MBCC-N2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8 ns | 2V | 2.2W Ta 28W Tc | 24A | SWITCHING | 0.0041Ohm | 25V | 18 ns | SILICON | N-Channel | 3m Ω @ 30A, 10V | 2V @ 250μA | 1700pF @ 12V | 23nC @ 10V | 3.4ns | 2.6 ns | 20V | 75A | 24A Ta 75A Tc | 25V | 300A | 50 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRLHM620TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.2766mm | ROHS3 Compliant | Lead Free | No | 8 | HIGH RELIABILITY | 8-PowerTDFN | No SVHC | 990.6μm | 3.3mm | 3.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 37W | 7.5 ns | 800mV | 2.7W Ta 37W Tc | 26A | SWITCHING | 57 ns | SILICON | N-Channel | 2.5m Ω @ 20A, 4.5V | 1.1V @ 50μA | 3620pF @ 10V | 78nC @ 4.5V | 25ns | 37 ns | 12V | 20V | 800 mV | 26A Ta 40A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
IPN60R360P7SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-261-3 | not_compliant | 1.8mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7W | 8 ns | 7W Tc | 9A | 150°C | SWITCHING | 0.36Ohm | 42 ns | SILICON | N-Channel | 360m Ω @ 2.7A, 10V | 4V @ 140μA | 555pF @ 400V | 13nC @ 10V | 20V | 600V | 9A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF9Z24NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | -12A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 45W | 13 ns | 4V | 3.8W Ta 45W Tc | -12A | SWITCHING | 23 ns | SILICON | P-Channel | 175m Ω @ 7.2A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 55ns | 37 ns | 20V | -55V | -55V | 4 V | 12A Tc | 55V | 48A | 96 mJ | 10V | ±20V | |||||||||||||||||||||||||
IPZ40N04S5L4R8ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 48W Tc | 40A | 0.0067Ohm | SILICON | N-Channel | 4.8m Ω @ 20A, 10V | 2V @ 17μA | 1560pF @ 25V | 29nC @ 10V | 40A Tc | 160A | 53 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
BSC050NE2LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 2V | 2.5W Ta 28W Tc | 39A | SWITCHING | 0.0076Ohm | 25V | SILICON | N-Channel | 5m Ω @ 30A, 10V | 2V @ 250μA | 760pF @ 12V | 10.4nC @ 10V | 2.2ns | 20V | 60A | 39A Ta 58A Tc | 25V | 240A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRF7490TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 5.4A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 39MOhm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 6.3 mm | Single | 2.5W | 13 ns | 4V | 2.5W Ta | 5.4A | SWITCHING | 51 ns | SILICON | N-Channel | 39m Ω @ 3.2A, 10V | 4V @ 250μA | 1720pF @ 25V | 56nC @ 10V | 4.2ns | 11 ns | 20V | 100V | 100V | 4 V | 5.4A Ta | 43A | 10V | ±20V | |||||||||||||||||||||||||||||||||
BSC252N10NSFGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 100V | 78W Tc | 7.2A | SWITCHING | 0.0252Ohm | SILICON | N-Channel | 25.2m Ω @ 20A, 10V | 4V @ 43μA | 1100pF @ 50V | 17nC @ 10V | 21ns | 20V | 7.2A Ta 40A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
BSC0902NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.5W Ta 48W Tc | 23A | SWITCHING | 0.0037Ohm | SILICON | N-Channel | 2.8m Ω @ 30A, 10V | 2V @ 10mA | 1500pF @ 15V | 32nC @ 10V | 5.4ns | 20V | 23A Ta 100A Tc | 400A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF7831TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 21A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 3.6MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 18 ns | 2.35V | 2.5W Ta | 62 ns | 21A | SWITCHING | 17 ns | SILICON | N-Channel | 3.6m Ω @ 20A, 10V | 2.35V @ 250μA | 6240pF @ 15V | 60nC @ 4.5V | 10ns | 5.3 ns | 12V | 30V | 2.35 V | 21A Ta | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||
IRFR7540TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.39mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 8.7 ns | 3.7V | 140W Tc | 90A | SWITCHING | 0.0048Ohm | 60V | 59 ns | SILICON | N-Channel | 4.8m Ω @ 66A, 10V | 3.7V @ 100μA | 4360pF @ 25V | 130nC @ 10V | 38ns | 32 ns | 20V | 90A Tc | 60V | 440A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
BSC160N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 60W | 13 ns | 100V | 60W Tc | 8.8A | SWITCHING | 22 ns | SILICON | N-Channel | 16m Ω @ 33A, 10V | 3.5V @ 33μA | 1700pF @ 50V | 25nC @ 10V | 15ns | 5 ns | 20V | 8.8A Ta 42A Tc | 50 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPP039N04LGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2007 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 94W | 10 ns | 40V | 94W Tc | 80A | SWITCHING | 0.0052Ohm | 38 ns | SILICON | N-Channel | 3.9m Ω @ 80A, 10V | 2V @ 45μA | 6100pF @ 25V | 78nC @ 10V | 5.4ns | 6 ns | 20V | 80A Tc | 400A | 60 mJ | 4.5V 10V | ±20V |
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