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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB320N20N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W | 11 ns | 136W Tc | 34A | SWITCHING | 200V | 21 ns | SILICON | N-Channel | 32m Ω @ 34A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 9ns | 4 ns | 20V | 34A Tc | 200V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB80N06S2L06ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 250W | 11 ns | 55V | 250W Tc | 80A | 0.0084Ohm | 60 ns | SILICON | N-Channel | 6m Ω @ 69A, 10V | 2V @ 180μA | 3800pF @ 25V | 150nC @ 10V | 21ns | 20 ns | 20V | 55V | 80A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AUIRF3205ZSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 18 ns | 170W Tc | 75A | SWITCHING | 0.0065Ohm | 45 ns | SILICON | N-Channel | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 3450pF @ 25V | 110nC @ 10V | 95ns | 67 ns | 20V | 55V | 75A Tc | 440A | 250 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLR3410TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.125Ohm | 100V | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 17A | 17A Tc | 100V | 60A | 150 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPD50N03S4L06ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | 30V | 56W Tc | 50A | 0.0055Ohm | 19 ns | SILICON | N-Channel | 5.5m Ω @ 50A, 10V | 2.2V @ 20μA | 2330pF @ 25V | 31nC @ 10V | 1ns | 7 ns | 16V | 50A Tc | 200A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPA50R800CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 6.2 ns | 500V | 26.4W Tc | 4.1A | SWITCHING | 0.8Ohm | 26 ns | SILICON | N-Channel | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 280pF @ 100V | 12.4nC @ 10V | 5.5ns | 15.9 ns | 20V | 4.1A Tc | 15.5A | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD050N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | TO-252AA | DRAIN | Halogen Free | Single | 68W | 6.7 ns | 30V | 68W Tc | 50A | SWITCHING | 25 ns | SILICON | N-Channel | 5m Ω @ 30A, 10V | 2.2V @ 250μA | 3200pF @ 15V | 31nC @ 10V | 13ns | 3.8 ns | 20V | 30V | 50A Tc | 60 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IPD65R1K4CFDBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Cut Tape (CT) | 2003 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 8 ns | 650V | 28.4W Tc | 2.8A | 33 ns | N-Channel | 1.4 Ω @ 1A, 10V | 4.5V @ 100μA | 262pF @ 100V | 10nC @ 10V | 6ns | 18.2 ns | 20V | 700V | 2.8A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0501NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.5W Ta 50W Tc | 100A | SWITCHING | 0.0024Ohm | SILICON | N-Channel | 1.9m Ω @ 30A, 10V | 2V @ 250μA | 2200pF @ 15V | 33nC @ 10V | 4ns | 20V | Schottky Diode (Body) | 29A | 29A Ta 100A Tc | 400A | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPAN60R650CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | CoolMOS™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | 9.9A | SWITCHING | 0.65Ohm | 600V | SILICON | N-Channel | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | Super Junction | 9.9A Tc | 600V | 19A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSF450NE7NH3XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Nickel | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e4 | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 75V | 2.2W Ta 18W Tc | 15A | N-Channel | 45m Ω @ 8A, 10V | 3.5V @ 8μA | 390pF @ 37.5V | 6nC @ 10V | 11.3ns | 20V | 75V | 5A Ta 15A Tc | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7746PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 9.9 ns | 99W Tc | 59A | 33 ns | N-Channel | 10.6m Ω @ 35A, 10V | 3.7V @ 100μA | 3049pF @ 25V | 83nC @ 10V | 36ns | 30 ns | 20V | 59A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5410TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 66W Tc | SWITCHING | 0.205Ohm | 100V | SILICON | P-Channel | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 13A | 13A Tc | 100V | 52A | 194 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPAN65R650CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | 10.1A | SWITCHING | 0.65Ohm | 650V | SILICON | N-Channel | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | Super Junction | 10.1A Tc | 650V | 18A | 142 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3708TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 87W Tc | SWITCHING | 0.0125Ohm | 30V | SILICON | N-Channel | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 2417pF @ 15V | 24nC @ 4.5V | 30A | 61A Tc | 30V | 244A | 213 mJ | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| BSZ070N08LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | -55°C | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | SWITCHING | 0.007Ohm | 80V | METAL-OXIDE SEMICONDUCTOR | SILICON | 13A | 160A | 104 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7740PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 12 ns | 143W Tc | 87A | 55 ns | N-Channel | 7.3m Ω @ 52A, 10V | 3.7V @ 100μA | 4650pF @ 25V | 122nC @ 10V | 60ns | 45 ns | 20V | 75V | 87A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSB104N08NP3GXUSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.8W Ta 42W Tc | 50A | SWITCHING | 0.0104Ohm | 80V | SILICON | N-Channel | 10.4m Ω @ 10A, 10V | 3.5V @ 40μA | 2100pF @ 40V | 31nC @ 10V | 4ns | 20V | 13A Ta 50A Tc | 80V | 200A | 110 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFH5110TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | 12.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.8 ns | 4V | 3.6W Ta 114W Tc | 63A | SWITCHING | 22 ns | SILICON | N-Channel | 12.4m Ω @ 37A, 10V | 4V @ 100μA | 3152pF @ 25V | 72nC @ 10V | 9.6ns | 6.4 ns | 20V | 100V | 11A Ta 63A Tc | 252A | 93 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPI45N06S4L08AKSA3 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 2009 | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 71W | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-262AA | DRAIN | Halogen Free | N-CHANNEL | 9 ns | 60V | 45A | 0.0082Ohm | METAL-OXIDE SEMICONDUCTOR | 45 ns | 2ns | 8 ns | 16V | 60V | 180A | 97 mJ | 4.78nF | 8.2 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70P04P4L08ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 12 ns | -40V | 75W Tc | 70A | 0.0078Ohm | 50 ns | SILICON | P-Channel | 7.8m Ω @ 70A, 10V | 2.2V @ 120μA | 5430pF @ 25V | 92nC @ 10V | 10ns | 41 ns | 16V | 70A Tc | 40V | 280A | 24 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IPD50N03S207ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 18 ns | 30V | 136W Tc | 50A | 26 ns | SILICON | N-Channel | 7.3m Ω @ 50A, 10V | 4V @ 85μA | 2000pF @ 25V | 68nC @ 10V | 40ns | 30 ns | 20V | 50A Tc | 200A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSC014N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 32 ns | 30V | 2.5W Ta 139W Tc | 30A | SWITCHING | 43 ns | SILICON | N-Channel | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 13000pF @ 15V | 173nC @ 10V | 16ns | 20V | 30A Ta 100A Tc | 400A | 340 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRL3705ZLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 86A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 130W | 17 ns | 130W Tc | 75A | SWITCHING | 0.008Ohm | 26 ns | SILICON | N-Channel | 8m Ω @ 52A, 10V | 3V @ 250μA | 2880pF @ 25V | 60nC @ 5V | 240ns | 83 ns | 16V | 55V | 75A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IPP60R380C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | HIGH VOLTAGE | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 83W Tc | SWITCHING | 0.38Ohm | 600V | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | 10.6A | 10.6A Tc | 600V | 30A | 210 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI50N10S3L16AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 10 ns | 100V | 100W Tc | 50A | 0.0209Ohm | 28 ns | SILICON | N-Channel | 15.7m Ω @ 50A, 10V | 2.4V @ 60μA | 4180pF @ 25V | 64nC @ 10V | 5ns | 20V | 50A Tc | 200A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRL8114PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2015 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 115W Tc | 90A | N-Channel | 4.5m Ω @ 40A, 10V | 2.25V @ 250μA | 2660pF @ 15V | 29nC @ 4.5V | 90A Tc | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P04P405ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 125W | 42 ns | -40V | 125W Tc | 80A | 0.0049Ohm | 73 ns | SILICON | P-Channel | 4.9m Ω @ 80A, 10V | 4V @ 250μA | 10300pF @ 25V | 151nC @ 10V | 24ns | 65 ns | 20V | -40V | 80A Tc | 40V | 64 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF6898MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | DirectFET™ Isometric MX | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 78W | 18 ns | 1.6V | 2.1W Ta 78W Tc | 35A | SWITCHING | 24 ns | SILICON | N-Channel | 1.1m Ω @ 35A, 10V | 2.1V @ 100μA | 5435pF @ 13V | 62nC @ 4.5V | 46ns | 19 ns | 16V | 25V | Schottky Diode (Body) | 35A Ta 213A Tc | 280A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS7540TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 160W | 12 ns | 3.7V | 160W Tc | 110A | SWITCHING | 60V | 58 ns | SILICON | N-Channel | 5.1m Ω @ 65A, 10V | 3.7V @ 100μA | 4555pF @ 25V | 130nC @ 10V | 76ns | 56 ns | 20V | 110A Tc | 60V | 6V 10V | ±20V |