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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPP80N06S4L07AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | Automotive, AEC-Q101, OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | 10mm | ROHS3 Compliant | 3 | TO-220-3 | not_compliant | 15.65mm | 4.4mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | NO | 1 | 1 | TO-220AB | DRAIN | Halogen Free | Single | 10 ns | 60V | 79W Tc | 80A | 0.0064Ohm | 50 ns | SILICON | N-Channel | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 5680pF @ 25V | 75nC @ 10V | 16V | 80A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R420CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 31.2W Tc | SWITCHING | 0.42Ohm | 650V | SILICON | N-Channel | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 870pF @ 100V | 32nC @ 10V | 8.7A | 8.7A Tc | 650V | 27A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7450TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | SMD/SMT | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 2.5A | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 170mOhm | Surface Mount | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 3W | 10 ns | 5.5V | 2.5W Ta | 2.5A | SWITCHING | 17 ns | SILICON | N-Channel | 170m Ω @ 1.5A, 10V | 5.5V @ 250μA | 940pF @ 25V | 39nC @ 10V | 3ns | 18 ns | 30V | 200V | 200V | 5.5 V | 2.5A Ta | 20A | 230 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPA65R110CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Tin | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 34.7W Tc | 31.2A | SWITCHING | 0.11Ohm | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 700V | 31.2A Tc | 650V | 99.6A | 845 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFS4228PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Tube | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | 175°C | -40°C | 10.668mm | RoHS Compliant | Lead Free | 83A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.65mm | 4.826mm | Surface Mount | -40°C~175°C TJ | 150V | MOSFET (Metal Oxide) | 1 | Single | 330W | 18 ns | 15mOhm | D2PAK | 330W Tc | 83A | 24 ns | N-Channel | 15mOhm @ 33A, 10V | 5V @ 250μA | 4530pF @ 25V | 107nC @ 10V | 30V | 150V | 83A Tc | 150V | 4.53nF | 10V | ±30V | 15 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL60SL216 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | Not Applicable | EAR99 | ROHS3 Compliant | Lead Free | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 375W Tc | 195A | N-Channel | 1.95m Ω @ 100A, 10V | 2.4V @ 250μA | 15330pF @ 25V | 255nC @ 4.5V | 195A Tc | 60V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS3034-7TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 7 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-263CB | DRAIN | 380W | 71 ns | 380W Tc | 240A | SWITCHING | 94 ns | SILICON | N-Channel | 1.4m Ω @ 200A, 10V | 2.5V @ 250μA | 10990pF @ 40V | 180nC @ 4.5V | 590ns | 200 ns | 20V | 40V | 380A | 240A Tc | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFPS3815PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Through Hole | Bulk | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 16.0782mm | ROHS3 Compliant | Lead Free | 105A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-274AA | 20.8mm | 5.3mm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | DRAIN | Single | 441W | 22 ns | 441W Tc | 105A | SWITCHING | 51 ns | SILICON | N-Channel | 15m Ω @ 63A, 10V | 5V @ 250μA | 6810pF @ 25V | 390nC @ 10V | 130ns | 60 ns | 30V | 150V | 105A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP04CN10NGXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 2008 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220 | No SVHC | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 300W | 1 | Halogen Free | N-CHANNEL | Single | 300W | 34 ns | 3V | 100V | 3.9mOhm | 100A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 76 ns | 78ns | 25 ns | 20V | 100V | 100V | 400A | 1000 mJ | 13.8nF | 4.2 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI110N20N3GAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 300W | 18 ns | 200V | 300W Tc | 88A | SWITCHING | 41 ns | SILICON | N-Channel | 11m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 88A Tc | 352A | 560 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPL60R065C7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 2A (4 Weeks) | 4 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Contains Lead | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | N-CHANNEL | 600V | 56mOhm | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 29A | 600V | 135A | 159 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099CPAAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2009 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | not_compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 255W Tc | SWITCHING | 0.105Ohm | 600V | SILICON | N-Channel | 105m Ω @ 18A, 10V | 3.5V @ 1.2mA | 2800pF @ 100V | 80nC @ 10V | 31A | 31A Tc | 600V | 93A | 800 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R017C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | 2013 | yes | Active | 1 (Unlimited) | EAR99 | 150°C | -55°C | ROHS3 Compliant | 25.22mm | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | 446W | 30 ns | 15mOhm | 109A | 150°C | 106 ns | 20V | 600V | 650V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R017C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | TO-247-3 | 25.4mm | ENHANCEMENT MODE | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 446W | 30 ns | 15mOhm | 109A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 106 ns | 20V | 600V | 650V | 495A | 582 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N03S4L01ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 8 ns | 30V | 188W Tc | 180A | 0.00105Ohm | 57 ns | SILICON | N-Channel | 1.05m Ω @ 100A, 10V | 2.2V @ 140μA | 17600pF @ 25V | 239nC @ 10V | 5ns | 23 ns | 16V | 180A Tc | 530 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 55V | 210W Tc | 80A | 0.01Ohm | SILICON | N-Channel | 7m Ω @ 60A, 10V | 2V @ 150μA | 3160pF @ 25V | 130nC @ 10V | 80A Tc | 450 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R250E6XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ E6 | yes | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 208W | 11 ns | 650V | 208W Tc | 16.1A | SWITCHING | 0.25Ohm | 76 ns | SILICON | N-Channel | 250m Ω @ 4.4A, 10V | 3.5V @ 400μA | 950pF @ 1000V | 45nC @ 10V | 9ns | 20V | 700V | 16.1A Tc | 46A | 290 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| AUIRF1010Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Tin | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.826mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 18 ns | 2V | 140W Tc | 94A | SWITCHING | 0.0075Ohm | 36 ns | SILICON | N-Channel | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 2840pF @ 25V | 95nC @ 10V | 150ns | 92 ns | 20V | 55V | 75A | 75A Tc | ||||||||||||||||||||||||||||||||||||||||||
| IRFSL7537PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | 2.084002g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 15 ns | 3.7V | 230W Tc | 173A | SWITCHING | 82 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 60V | 173A Tc | 700A | 554 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S208AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | 14 ns | 55V | 215W Tc | 80A | 0.008Ohm | 32 ns | SILICON | N-Channel | 8m Ω @ 58A, 10V | 4V @ 150μA | 2860pF @ 25V | 96nC @ 10V | 15ns | 14 ns | 20V | 80A Tc | 450 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS3806TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 71W Tc | SWITCHING | 0.0158Ohm | 60V | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 43A | 43A Tc | 60V | 170A | 73 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB120N08S404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 80V | 179W Tc | 120A | 0.0041Ohm | SILICON | N-Channel | 4.1m Ω @ 100A, 10V | 4V @ 120μA | 6450pF @ 25V | 95nC @ 10V | 120A Tc | 480A | 310 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ44ZSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 80W | 14 ns | 80W Tc | 51A | SWITCHING | 33 ns | SILICON | N-Channel | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 1420pF @ 25V | 43nC @ 10V | 68ns | 41 ns | 20V | 55V | 51A Tc | 200A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL1404STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 160A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.703mm | 4.826mm | 4mOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 18 ns | 3V | 3.8W Ta 200W Tc | 160A | SWITCHING | 38 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 3V @ 250μA | 6600pF @ 25V | 140nC @ 5V | 270ns | 130 ns | 20V | 40V | 40V | 3 V | 160A Tc | 640A | 520 mJ | 4.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6811STRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Copper, Silver, Tin | 6 | DirectFET™ Isometric SQ | 700μm | 3.7MOhm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-XBCC-N2 | 1 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W | 8.7 ns | 2.1W Ta 32W Tc | 19A | 150°C | SWITCHING | 11 ns | SILICON | N-Channel | 3.7m Ω @ 19A, 10V | 2.1V @ 35μA | 1590pF @ 13V | 17nC @ 4.5V | 19ns | 5.5 ns | 16V | 25V | 74A | 19A Ta 74A Tc | 32 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IPD90N06S4L06ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 6.73mm | ROHS3 Compliant | 3 | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 10 ns | 60V | 79W Tc | 90A | 50 ns | SILICON | N-Channel | 6.3m Ω @ 90A, 10V | 2.2V @ 40μA | 5680pF @ 25V | 75nC @ 10V | 3ns | 8 ns | 16V | 90A Tc | 67 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB80N04S4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 7 ns | 40V | 71W Tc | 80A | 0.004Ohm | 22 ns | SILICON | N-Channel | 4m Ω @ 80A, 10V | 2.2V @ 35μA | 4690pF @ 25V | 60nC @ 10V | 12ns | 31 ns | 20V | 80A Tc | 100 mJ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7647S2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | DirectFET™ Isometric SC | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | P-CHANNEL | 41W | 5.5 ns | 4V | 2.5W Ta 41W Tc | 5.9A | AMPLIFIER | 0.031Ohm | 7.9 ns | SILICON | N-Channel | 31m Ω @ 14A, 10V | 5V @ 50μA | 910pF @ 25V | 21nC @ 10V | 8.4ns | 4.6 ns | 20V | 100V | 24A | 5.9A Ta 24A Tc | 95A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRLL024ZTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 1W | 8.6 ns | 1W Ta | 5A | 20 ns | N-Channel | 60m Ω @ 3A, 10V | 3V @ 250μA | 380pF @ 25V | 11nC @ 5V | 33ns | 15 ns | 16V | 5A | 5A Ta | 55V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6722MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 3 (168 Hours) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MP | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 11 ns | 2.3W Ta 42W Tc | 13A | SWITCHING | 0.0077Ohm | 9.5 ns | SILICON | N-Channel | 7.7m Ω @ 13A, 10V | 2.4V @ 50μA | 1300pF @ 15V | 17nC @ 4.5V | 7.8ns | 6.1 ns | 20V | 30V | 13A Ta 56A Tc | 82 mJ | 4.5V 10V | ±20V |