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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IPP60R074C6XKSA1 IPP60R074C6XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 CoolMOS™ yes Last Time Buy 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 11 ns 600V 480.8W Tc 57.7A SWITCHING 0.074Ohm 56 ns SILICON N-Channel 74m Ω @ 21A, 10V 3.5V @ 1.4mA 3020pF @ 100V 138nC @ 10V 7ns 4 ns 20V 57.7A Tc 923 mJ 10V ±20V
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 19 ns 2.35V 54 ns 370W Tc 230A 99 ns N-Channel 3m Ω @ 140A, 10V 4V @ 250μA 9370pF @ 50V 240nC @ 10V 110ns 100 ns 20V 75V 75V 2.35 V 195A Tc 10V ±20V
    SPW35N60CFDFKSA1 SPW35N60CFDFKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AA 313W Tc 0.118Ohm 600V SILICON N-Channel 118m Ω @ 21.6A, 10V 5V @ 1.9mA 5060pF @ 25V 212nC @ 10V 34.1A 34.1A Tc 600V 85A 1300 mJ 10V ±20V
    IPA65R045C7XKSA1 IPA65R045C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 20 ns 650V 35W Tc 18A SWITCHING 0.045Ohm 82 ns SILICON N-Channel 45m Ω @ 24.9A, 10V 4V @ 1.25mA 4340pF @ 400V 93nC @ 10V 14ns 7 ns 20V 18A Tc 212A 249 mJ 10V ±20V
    IPW60R075CPFKSA1 IPW60R075CPFKSA1 Infineon Technologies $0.00
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    		 download 52 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free No 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE 313W 40 ns 600V 313W Tc 39A SWITCHING 0.075Ohm 110 ns SILICON N-Channel 75m Ω @ 26A, 10V 3.5V @ 1.7mA 4000pF @ 100V 116nC @ 10V 17ns 7 ns 20V 39A Tc 650V 10V ±20V
    IRLR7807ZTRPBF IRLR7807ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 43A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 13.8MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 40W 7.1 ns 1.8V 40W Tc 35 ns 43A SWITCHING 9.8 ns SILICON N-Channel 13.8m Ω @ 15A, 10V 2.25V @ 250μA 780pF @ 15V 11nC @ 4.5V 28ns 3.5 ns 20V 30V 1.8 V 43A Tc 28 mJ 4.5V 10V ±20V
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    		 download 16 Weeks Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free 160A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 2.39mm 6.22mm 4.2MOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) 1 Single 230mW 15 ns 4V 230W Tc 31 ns 160A 40 ns N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 46ns 77 ns 20V 60V 120A Tc 10V ±20V
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    		 download Through Hole Tube 2006 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 35W 12 ns 600V 35W Tc 20.7A SWITCHING 0.22Ohm SILICON N-Channel 220m Ω @ 13.1A, 10V 5V @ 1mA 2400pF @ 25V 124nC @ 10V 6.4 ns 20V 20.7A Tc 52A 690 mJ 10V ±20V
    AUIRLS4030TRL AUIRLS4030TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 370W Tc SWITCHING 0.0043Ohm 100V SILICON N-Channel 4.3m Ω @ 110A, 10V 2.5V @ 250μA 11360pF @ 50V 130nC @ 4.5V 180A 180A Tc 100V 730A 305 mJ 4.5V 10V ±16V
    IPI041N12N3GAKSA1 IPI041N12N3GAKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 35 ns 120V 300W Tc 120A SWITCHING 0.0041Ohm 70 ns SILICON N-Channel 4.1m Ω @ 100A, 10V 4V @ 270μA 13800pF @ 60V 211nC @ 10V 52ns 21 ns 20V 120A Tc 480A 900 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 14 ns 650V 34W Tc 12A SWITCHING 0.095Ohm 60 ns SILICON N-Channel 95m Ω @ 11.8A, 10V 4V @ 590μA 2140pF @ 400V 45nC @ 10V 12ns 7 ns 20V 12A Tc 100A 118 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Contains Lead Tin No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 AUIRFS3004 R-PSSO-G6 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 380W 23 ns 4V 380W Tc 240A SWITCHING 91 ns SILICON N-Channel 1.25m Ω @ 195A, 10V 4V @ 250μA 9130pF @ 25V 240nC @ 10V 240ns 160 ns 20V 40V 400A 240A Tc 290 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 24 ns 140W Tc 42A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 42A Tc 250A 4.5V 10V ±16V
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    		 download 16 Weeks Tape & Reel (TR) 2014 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 11A 11A Tc 55V 44A 62 mJ 10V ±20V
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    		 download 14 Weeks Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc SWITCHING 0.023Ohm 60V SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 48A 48A Tc 60V 192A 220 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 175°C -55°C 6.7056mm ROHS3 Compliant Lead Free 42A No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 27mOhm Through Hole 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 110W 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W 11 ns 2V 42A SWITCHING 26 ns N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 84ns 15 ns 16V 55V 55V 2 V 20A 42A Tc
    AUIRFU8401 AUIRFU8401 Infineon Technologies $0.00
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    		 download 26 Weeks Through Hole Tube 2013 HEXFET® Active 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.39mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 79W 7.9 ns 79W Tc 100A 25 ns N-Channel 4.25m Ω @ 60A, 10V 3.9V @ 500μA 2200pF @ 25V 63nC @ 10V 34ns 24 ns 20V 100A Tc 40V 10V ±20V
    SPU04N60C3BKMA1 SPU04N60C3BKMA1 Infineon Technologies $0.00
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    		 download 8 Weeks Tube 2005 CoolMOS™ no Last Time Buy 1 (Unlimited) 3 ROHS3 Compliant Lead Free 4.5A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 Single 50W 6 ns 3V 50W Tc 4.5A SWITCHING 0.95Ohm 58.5 ns SILICON N-Channel 950m Ω @ 2.8A, 10V 3.9V @ 200μA 490pF @ 25V 25nC @ 10V 2.5ns 9.5 ns 20V 600V 4.5A Tc 10V ±20V
    IPB80P04P4L08ATMA1 IPB80P04P4L08ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 Automotive, AEC-Q101, OptiMOS™ Not For New Designs 1 (Unlimited) EAR99 10mm ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Halogen Free Single 75W 12 ns -40V 75W Tc -80A 42 ns P-Channel 7.9m Ω @ 80A, 10V 2.2V @ 120μA 5430pF @ 25V 92nC @ 10V 11ns 35 ns 16V -40V 80A Tc 40V 4.5V 10V ±16V
    IPB120N04S404ATMA1 IPB120N04S404ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 79W Tc 120A 0.0036Ohm SILICON N-Channel 3.6m Ω @ 100A, 10V 4V @ 40μA 4100pF @ 25V 55nC @ 10V 120A Tc 480A 75 mJ 10V ±20V
    IRF540NSTRRPBF IRF540NSTRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 1997 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 130W Tc SWITCHING 0.044Ohm 100V SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 33A 33A Tc 100V 110A 185 mJ 10V ±20V
    AUIRL7732S2TR AUIRL7732S2TR Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 7 HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE DirectFET™ Isometric SC No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.2W 21 ns 1.8V 2.2W Ta 41W Tc 14A SWITCHING 0.0066Ohm 22 ns SILICON N-Channel 6.6m Ω @ 35A, 10V 2.5V @ 50μA 2020pF @ 25V 33nC @ 4.5V 123ns 37 ns 16V 40V 58A 14A Ta 230A 4.5V 10V ±16V
    BSF134N10NJ3GXUMA1 BSF134N10NJ3GXUMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 3 (168 Hours) 2 EAR99 ROHS3 Compliant Lead Free Silver 7 3-WDSON No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED 2 R-MBCC-N2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.2W 2.7V 100V 2.2W Ta 43W Tc 9A SWITCHING SILICON N-Channel 13.4m Ω @ 30A, 10V 3.5V @ 40μA 2300pF @ 50V 30nC @ 10V 6ns 20V 9A 9A Ta 40A Tc 6V 10V ±20V
    IRFR7540PBF IRFR7540PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2013 StrongIRFET™ Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED 1 Single 140W 8.7 ns 140W Tc 90A 59 ns N-Channel 4.8m Ω @ 66A, 10V 3.7V @ 100μA 4360pF @ 25V 130nC @ 10V 38ns 32 ns 20V 90A Tc 60V 6V 10V ±20V
    IRFH4226TRPBF IRFH4226TRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2014 FASTIRFET™, HEXFET® Obsolete 1 (Unlimited) EAR99 RoHS Compliant Lead Free 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFH4226 1 3.4W 11 ns 3.4W Ta 46W Tc 30A 14 ns N-Channel 2.4m Ω @ 30A, 10V 2.1V @ 50μA 2000pF @ 13V 32nC @ 10V 35ns 8.1 ns 20V 30A Ta 70A Tc 25V 4.5V 10V ±20V
    AUIRL3705ZSTRL AUIRL3705ZSTRL Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 75A SWITCHING 0.008Ohm 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 75A Tc
    IRFS7730-7PPBF IRFS7730-7PPBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2013 StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 5.084mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 375W 20 ns 2.1V 375W Tc 240A 175°C 182 ns N-Channel 2m Ω @ 100A, 10V 3.7V @ 250μA 13970pF @ 25V 428nC @ 10V 90ns 91 ns 20V 75V 240A Tc 6V 10V ±20V
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    		 download 15 Weeks Surface Mount Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 140W 11 ns 140W Tc 85A 57 ns N-Channel 6.7m Ω @ 51A, 10V 3.7V @ 100μA 4440pF @ 25V 130nC @ 10V 49ns 40 ns 20V 85A Tc 75V 6V 10V ±20V
    AUIRFS3206TRL AUIRFS3206TRL Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2015 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.003Ohm 60V SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 120A 120A Tc 60V 840A 170 mJ 10V ±20V
    BSO613SPVGHUMA1 BSO613SPVGHUMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 1999 SIPMOS® yes Obsolete 3 (168 Hours) 8 EAR99 RoHS Compliant Lead Free Tin -3.44A 8 AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm Surface Mount -55°C~150°C TJ -60V MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SO 8 e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Not Halogen Free 2.5W 10 ns -3V -60V 2.5W Ta -3.44A 32 ns SILICON P-Channel 130m Ω @ 3.44A, 10V 4V @ 1mA 875pF @ 25V 30nC @ 10V 11ns 20V -60V 3.44A Ta 60V 10V ±20V