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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC019N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 40V | 1.5mOhm | PG-TDSON-8-1 | 2.5W Ta 78W Tc | 100A | N-Channel | 1.9mOhm @ 50A, 10V | 2V @ 250μA | 2900pF @ 20V | 41nC @ 10V | 4ns | 20V | 27A Ta 100A Tc | 40V | 2.9nF | 4.5V 10V | ±20V | 1.9 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR18N15DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | N-Channel | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 900pF @ 25V | 43nC @ 10V | 18A Tc | 150V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU9343PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 175°C | -40°C | 6.7056mm | ROHS3 Compliant | Lead Free | -20A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.3876mm | Through Hole | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | 79W | 1 | DRAIN | Single | 79W | 9.5 ns | -20A | AMPLIFIER | 21 ns | P-Channel | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 660pF @ 50V | 47nC @ 10V | 24ns | 9.5 ns | 20V | 30V | 20A Tc | 55V | 60A | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 89W Tc | SWITCHING | 0.004Ohm | 20V | SILICON | N-Channel | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 2830pF @ 10V | 31nC @ 4.5V | 30A | 120A Tc | 20V | 460A | 460 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ084N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | 1 | DRAIN | Halogen Free | Single | 13 ns | 80V | 63W Tc | 40A | SWITCHING | 25 ns | SILICON | N-Channel | 8.4m Ω @ 20A, 10V | 3.8V @ 31μA | 1820pF @ 40V | 25nC @ 10V | 5ns | 5 ns | 20V | 80V | 40A Tc | 76 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 53A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 120W | 14 ns | 4V | 3.8W Ta 107W Tc | 53A | SWITCHING | 0.0165Ohm | 52 ns | SILICON | N-Channel | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 1696pF @ 25V | 72nC @ 10V | 76ns | 57 ns | 20V | 55V | 53A Tc | 180A | 152 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD127N06LGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 136W Tc | SWITCHING | 0.0127Ohm | 60V | SILICON | N-Channel | 12.7m Ω @ 50A, 10V | 2V @ 80μA | 2300pF @ 30V | 69nC @ 10V | 50A | 50A Tc | 60V | 200A | 240 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7457TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 15A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 7MOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | 5A | 1 | 20V | Single | 2.5W | 14 ns | 3V | 2.5W Ta | 15A | 150°C | 16 ns | N-Channel | 7m Ω @ 15A, 10V | 3V @ 250μA | 3100pF @ 10V | 42nC @ 4.5V | 16ns | 7.5 ns | 20V | 20V | 15A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2607ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | 175°C | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | SWITCHING | 0.022Ohm | 75V | SILICON | N-Channel | 22m Ω @ 30A, 10V | 4V @ 50μA | 1440pF @ 25V | 51nC @ 10V | 42A | 42A Tc | 75V | 180A | 96 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R340C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 208W | 70 ns | 900V | 208W Tc | 15A | SWITCHING | 400 ns | SILICON | N-Channel | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 2400pF @ 100V | 94nC @ 10V | 20ns | 25 ns | 20V | 15A Tc | 678 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD316SNH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Tin | 6 | 6-VSSOP, SC-88, SOT-363 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 30V | 500mW Ta | 1.4A | N-Channel | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 94pF @ 15V | 0.6nC @ 5V | 2.3ns | 20V | 1.4A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC057N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 45W | 30V | 2.5W Ta 45W Tc | 17A | SWITCHING | SILICON | N-Channel | 5.7m Ω @ 30A, 10V | 2.2V @ 250μA | 2400pF @ 15V | 30nC @ 10V | 3.6ns | 20V | 17A Ta 71A Tc | 25 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120NTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 40W Tc | SWITCHING | 0.48Ohm | 100V | SILICON | P-Channel | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 6.6A | 6.6A Tc | 100V | 26A | 100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ099N06LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | -55°C | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | SWITCHING | 0.0099Ohm | 60V | METAL-OXIDE SEMICONDUCTOR | SILICON | 11A | 160A | 19 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 43W Tc | SWITCHING | 0.6Ohm | 200V | SILICON | N-Channel | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 5A | 5A Tc | 200V | 20A | 46 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.0065Ohm | 30V | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 2330pF @ 15V | 26nC @ 4.5V | 30A | 86A Tc | 30V | 340A | 100 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.0065Ohm | 30V | SILICON | N-Channel | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 2330pF @ 15V | 26nC @ 4.5V | 30A | 86A Tc | 30V | 340A | 100 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7607TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Active | 2 (1 Year) | 8 | 3mm | ROHS3 Compliant | Contains Lead | 6.5A | No | 8 | HIGH RELIABILITY | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 860μm | 3mm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 1.8W | 8.5 ns | 1.2V | 1.8W Ta | 6.5A | SWITCHING | 0.03Ohm | 36 ns | SILICON | N-Channel | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 22nC @ 5V | 11ns | 16 ns | 12V | 20V | 6.5A Ta | 50A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF9410TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 7A | No | 8 | AVALANCHE RATED, ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 30mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 6.3 mm | Single | 2.5W | 7.3 ns | 1V | 2.5W Ta | 7A | SWITCHING | 23 ns | SILICON | N-Channel | 30m Ω @ 7A, 10V | 1V @ 250μA | 550pF @ 25V | 27nC @ 10V | 7.3ns | 17 ns | 20V | 30V | 30V | 1 V | 7A Ta | 70 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD50R800CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | Contains Lead | DPAK | not_compliant | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 40W | 1 | TO-252 | DRAIN | Halogen Free | N-CHANNEL | Single | 40W | 500V | 800mOhm | 5A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 26 ns | 5.5ns | 15.9 ns | 20V | 550V | 500V | 83 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R1K0CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | Contains Lead | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252 | DRAIN | Halogen Free | N-CHANNEL | 600V | 860mOhm | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 600V | 12A | 46 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0994NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W Ta | SWITCHING | 0.009Ohm | 30V | SILICON | N-Channel | 7m Ω @ 5A, 10V | 2V @ 250μA | 890pF @ 15V | 7nC @ 4.5V | 8.5A | 13A Ta | 30V | 52A | 16 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 79W Tc | SWITCHING | 0.12Ohm | 100V | SILICON | N-Channel | 100m Ω @ 9A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 17A | 17A Tc | 100V | 60A | 150 mJ | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP037N06L3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 167W | 25 ns | 60V | 167W Tc | 90A | SWITCHING | SILICON | N-Channel | 3.7m Ω @ 90A, 10V | 2.2V @ 93μA | 13000pF @ 30V | 79nC @ 4.5V | 13 ns | 90A Tc | 165 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R160P6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 12.5 ns | 600V | 144mOhm | PG-TO247-3 | 176W Tc | 23.8A | 40 ns | N-Channel | 160mOhm @ 9A, 10V | 4.5V @ 750μA | 2080pF @ 100V | 44nC @ 10V | 7.6ns | 5.8 ns | 20V | 23.8A Tc | 600V | 2.08nF | 10V | ±20V | 160 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8302MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 7 | DirectFET™ Isometric MX | 700μm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | MG-WDSON-5 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 22 ns | 1.35V | 2.8W Ta 104W Tc | 31A | 150°C | SWITCHING | 20 ns | SILICON | N-Channel | 1.8m Ω @ 31A, 10V | 2.35V @ 150μA | 6030pF @ 15V | 53nC @ 4.5V | 37ns | 15 ns | 20V | 30V | 31A Ta 190A Tc | 250A | 260 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA093N06N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 15 ns | 60V | 33W Tc | 43A | SWITCHING | 20 ns | SILICON | N-Channel | 9.3m Ω @ 40A, 10V | 4V @ 34μA | 3900pF @ 30V | 48nC @ 10V | 40ns | 5 ns | 20V | 43A Tc | 172A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8726TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 175°C | -55°C | 6.7056mm | ROHS3 Compliant | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.26mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 75W | 12 ns | 5.8mOhm | D-Pak | 75W Tc | 86A | 15 ns | N-Channel | 5.8mOhm @ 25A, 10V | 2.35V @ 50μA | 2150pF @ 15V | 23nC @ 4.5V | 49ns | 16 ns | 12V | 30V | 86A Tc | 30V | 2.15nF | 4.5V 10V | ±20V | 5.8 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R1K4CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ CE | yes | Active | 3 (168 Hours) | EAR99 | 6.73mm | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 1 | Single | 25W | 6.5 ns | 42W Tc | 3.1A | 23 ns | N-Channel | 1.4 Ω @ 900mA, 13V | 3.5V @ 70μA | 178pF @ 100V | 8.2nC @ 10V | 6ns | 30 ns | 30V | 550V | 3.1A Tc | 500V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R950CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Contains Lead, Lead Free | 3 | TO-252-3 | not_compliant | 2.41mm | 6.22mm | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | 34W | 1 | Halogen Free | N-CHANNEL | Single | 34W | 7 ns | 500V | 950mOhm | 4.3A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 25 ns | 4.9ns | 19.5 ns | 20V | 500V | 500V | 12.8A | 68 mJ | 231pF | 950 mΩ |