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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB70N10S312ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 17 ns | 100V | 125W Tc | 70A | 25 ns | SILICON | N-Channel | 11.3m Ω @ 70A, 10V | 4V @ 83μA | 4355pF @ 25V | 66nC @ 10V | 8ns | 20V | 70A Tc | 280A | 410 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5004TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 13 ns | 4V | 3.6W Ta 156W Tc | 100A | SWITCHING | 0.0026Ohm | 28 ns | SILICON | N-Channel | 2.6m Ω @ 50A, 10V | 4V @ 150μA | 4490pF @ 20V | 110nC @ 10V | 39ns | 16 ns | 20V | 40V | 4 V | 28A Ta 100A Tc | 400A | 340 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF6643TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | No | 5 | DirectFET™ Isometric MZ | No SVHC | 508μm | 5.0546mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 9.2 ns | 4V | 2.8W Ta 89W Tc | 6.2A | SWITCHING | 13 ns | SILICON | N-Channel | 34.5m Ω @ 7.6A, 10V | 4.9V @ 150μA | 2340pF @ 25V | 55nC @ 10V | 5ns | 4.4 ns | 20V | 150V | 6.2A Ta 35A Tc | 76A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF6775MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MZ | 508μm | 5.0546mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 5.9 ns | 2.8W Ta 89W Tc | 4.9A | AMPLIFIER | 5.8 ns | SILICON | N-Channel | 56m Ω @ 5.6A, 10V | 5V @ 100μA | 1411pF @ 25V | 36nC @ 10V | 7.8ns | 15 ns | 20V | 150V | 28A | 4.9A Ta 28A Tc | 39A | 33 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRL7486MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 2 | DirectFET™ Isometric ME | Unknown | 700μm | 5.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-XBCC-N6 | 1 | DRAIN | Single | 35 ns | 1.8V | 104W Tc | 209A | SWITCHING | 40V | 54 ns | SILICON | N-Channel | 1.25m Ω @ 123A, 10V | 2.5V @ 150μA | 6904pF @ 25V | 111nC @ 4.5V | 20V | 209A Tc | 40V | 836A | 190 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC016N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W Ta 139W Tc | SWITCHING | 0.0023Ohm | 40V | SILICON | N-Channel | 1.6m Ω @ 50A, 10V | 2V @ 85μA | 12000pF @ 20V | 150nC @ 10V | 100A | 31A Ta 100A Tc | 40V | 400A | 295 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6646TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 12A | No | 5 | DirectFET™ Isometric MN | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 80V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 17 ns | 4.9V | 2.8W Ta 89W Tc | 12mA | SWITCHING | 31 ns | SILICON | N-Channel | 9.5m Ω @ 12A, 10V | 4.9V @ 150μA | 2060pF @ 25V | 50nC @ 10V | 20ns | 12 ns | 20V | 80V | 68A | 12A Ta 68A Tc | 96A | 230 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF7946TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | No | 7 | DirectFET™ Isometric MX | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 96W | 20 ns | 3V | 96W Tc | 90A | 54 ns | N-Channel | 1.4m Ω @ 90A, 10V | 3.9V @ 150μA | 6852pF @ 25V | 212nC @ 10V | 49ns | 41 ns | 20V | 3 V | 90A Tc | 40V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S5L1R1ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 0.0014Ohm | 40V | SILICON | N-Channel | 1.1m Ω @ 50A, 10V | 2V @ 90μA | 8250pF @ 25V | 140nC @ 10V | 100A | 100A Tc | 40V | 400A | 480 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD08N50C3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | Tin | 7.6A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.41mm | 6.22mm | Surface Mount | -55°C~150°C TJ | 560V | MOSFET (Metal Oxide) | 1 | Single | 83W | 6 ns | 3V | 600mOhm | PG-TO252-3-1 | 83W Tc | 7.6A | 60 ns | N-Channel | 600mOhm @ 4.6A, 10V | 3.9V @ 350μA | 750pF @ 25V | 32nC @ 10V | 5ns | 7 ns | 20V | 500V | 560V | 3 V | 7.6A Tc | 500V | 750pF | 10V | ±20V | 600 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IPB049NE7N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Powers | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W | 14 ns | 3.1V | 150W Tc | 80A | SWITCHING | 0.0049Ohm | 75V | 30 ns | SILICON | N-Channel | 4.9m Ω @ 80A, 10V | 3.8V @ 91μA | 4750pF @ 37.5V | 68nC @ 10V | 11ns | 8 ns | 20V | 80A Tc | 75V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPC100N04S51R2ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 0.0014Ohm | 40V | SILICON | N-Channel | 1.2m Ω @ 50A, 10V | 3.4V @ 90μA | 7650pF @ 25V | 131nC @ 10V | 100A | 100A Tc | 40V | 400A | 480 mJ | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6715MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 7 | DirectFET™ Isometric MX | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.8W | 20 ns | 2.8W Ta 78W Tc | 34A | SWITCHING | 16 ns | SILICON | N-Channel | 1.6m Ω @ 34A, 10V | 2.4V @ 100μA | 5340pF @ 13V | 59nC @ 4.5V | 31ns | 12 ns | 20V | 25V | 34A Ta 180A Tc | 200 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BSC037N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 2.5W | 14 ns | 3V | 80V | 2.5W Ta 114W Tc | 100A | 150°C | SWITCHING | 0.0037Ohm | 26 ns | SILICON | N-Channel | 3.7m Ω @ 50A, 10V | 3.8V @ 72μA | 4200pF @ 40V | 58nC @ 10V | 10ns | 7 ns | 20V | 80V | 22A | 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSC079N10NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 24 ns | 100V | 156W Tc | 13.4A | SWITCHING | 0.0079Ohm | 38 ns | SILICON | N-Channel | 7.9m Ω @ 50A, 10V | 4V @ 110μA | 5900pF @ 50V | 87nC @ 10V | 40ns | 11 ns | 20V | 13.4A Ta 100A Tc | 400A | 377 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPC100N04S5L1R5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 115W Tc | 0.0021Ohm | 40V | SILICON | N-Channel | 1.5m Ω @ 50A, 10V | 2V @ 60μA | 5340pF @ 25V | 95nC @ 10V | 100A | 100A Tc | 40V | 400A | 220 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7832TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 20A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 4MOhm | Surface Mount | -55°C~155°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 1 | 6.3 mm | Single | 2.5W | 12 ns | 2.32V | 2.5W Ta | 62 ns | 20A | 155°C | SWITCHING | 21 ns | SILICON | N-Channel | 4m Ω @ 20A, 10V | 2.32V @ 250μA | 4310pF @ 15V | 51nC @ 4.5V | 6.7ns | 13 ns | 20V | 30V | 30V | 2.32 V | 20A Ta | 260 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFH7446TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 5 | EAR99 | 5.85mm | ROHS3 Compliant | Lead Free | No | 5 | 8-TQFN Exposed Pad | No SVHC | 1.17mm | 5mm | 3.3MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | FET General Purpose Power | 1 | DRAIN | Single | 78W | 11 ns | 2.2V | 78W Tc | 85A | SWITCHING | 33 ns | SILICON | N-Channel | 3.3m Ω @ 50A, 10V | 3.9V @ 100μA | 3174pF @ 25V | 98nC @ 10V | 37ns | 26 ns | 20V | 40V | 85A Tc | 468A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFH5406TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 900μm | 5mm | 14.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRFH5406TRPBF | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 12 ns | 4V | 3.6W Ta 46W Tc | 40A | 150°C | SWITCHING | 5.4 ns | SILICON | N-Channel | 14.4m Ω @ 24A, 10V | 4V @ 50μA | 1256pF @ 25V | 35nC @ 10V | 8.7ns | 3.5 ns | 20V | 60V | 2 V | 11A Ta 40A Tc | 45 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF6617TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 150°C | -40°C | 3.95mm | ROHS3 Compliant | Lead Free | 14A | No | 5 | DirectFET™ Isometric ST | No SVHC | 620μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | 42W | 11 ns | 2.35V | 6.2mOhm | DIRECTFET™ ST | 2.1W Ta 42W Tc | 11A | 12 ns | N-Channel | 8.1mOhm @ 15A, 10V | 2.35V @ 250μA | 1300pF @ 15V | 17nC @ 4.5V | 34ns | 3.7 ns | 20V | 30V | 2.35 V | 14A Ta 55A Tc | 30V | 1.3nF | 4.5V 10V | ±20V | 8.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R650P6SATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ P6 | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | 75.891673mg | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N5 | 1 | 1 | DRAIN | Halogen Free | Single | 11 ns | 600V | 56.8W Tc | 6.7A | SWITCHING | 0.65Ohm | 33 ns | SILICON | N-Channel | 650m Ω @ 2.4A, 10V | 4.5V @ 200μA | 557pF @ 100V | 12nC @ 10V | 7ns | 14 ns | 30V | 600V | 6.7A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 53A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 16.5mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 14 ns | 3.8W Ta 107W Tc | 53A | SWITCHING | 52 ns | SILICON | N-Channel | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 1696pF @ 25V | 72nC @ 10V | 76ns | 57 ns | 20V | 55V | 53A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSO080P03SHXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | yes | Active | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 15 ns | -1.5V | -30V | 1.79W Ta | 12.6A | 130 ns | SILICON | P-Channel | 8m Ω @ 14.9A, 10V | 2.2V @ 250μA | 5890pF @ 25V | 136nC @ 10V | 22ns | 110 ns | 25V | 12.6A Ta | 30V | 60A | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| IPD50N03S2L06ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 30V | 136W Tc | 50A | SWITCHING | 0.0092Ohm | 40 ns | SILICON | N-Channel | 6.4m Ω @ 50A, 10V | 2V @ 85μA | 1900pF @ 25V | 68nC @ 10V | 30ns | 15 ns | 20V | 50A Tc | 200A | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S5L1R9ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 0.0025Ohm | 40V | SILICON | N-Channel | 1.9m Ω @ 50A, 10V | 2V @ 50μA | 4310pF @ 25V | 81nC @ 10V | 100A | 100A Tc | 40V | 400A | 130 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7240TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | -10.5A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 15mOhm | Surface Mount | -55°C~150°C TJ | -40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Other Transistors | 1 | Single | 2.5W | 52 ns | -3V | 2.5W Ta | 65 ns | -10.5A | 150°C | SWITCHING | 210 ns | SILICON | P-Channel | 15m Ω @ 10.5A, 10V | 3V @ 250μA | 9250pF @ 25V | 110nC @ 10V | 490ns | 97 ns | 20V | -40V | 10.5A Ta | 40V | 43A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSC118N10NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 114W | 21 ns | 100V | 114W Tc | 11A | SWITCHING | 32 ns | SILICON | N-Channel | 11.8m Ω @ 50A, 10V | 4V @ 70μA | 3700pF @ 50V | 56nC @ 10V | 8 ns | 20V | 11A Ta 71A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPW21N50C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 40 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Last Time Buy | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 21A | No | 3 | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | 560V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | 208W | 10 ns | 500V | 208W Tc | 21A | SWITCHING | 67 ns | SILICON | N-Channel | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 95nC @ 10V | 5ns | 4.5 ns | 20V | 21A Tc | 690 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRFB8409 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 3.43mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 375W | 32 ns | 3.9V | 375W Tc | 195A | 160 ns | N-Channel | 1.3m Ω @ 100A, 10V | 3.9V @ 250μA | 14240pF @ 25V | 450nC @ 10V | 105ns | 100 ns | 20V | 2.2 V | 195A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R125CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 35W | 15 ns | 600V | 35W Tc | 25A | SWITCHING | 50 ns | SILICON | N-Channel | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 2500pF @ 100V | 70nC @ 10V | 5ns | 20V | 25A Tc | 650V | 82A | 708 mJ | 10V | ±20V |