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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRL3705ZSTRLPBF IRL3705ZSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm 8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 86A SWITCHING 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 75A 75A Tc 4.5V 10V ±16V
    IPD65R225C7ATMA1 IPD65R225C7ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Cut Tape (CT) 2013 CoolMOS™ C7 Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 63W 9 ns 650V 63W Tc 11A SWITCHING 0.225Ohm 48 ns SILICON N-Channel 225m Ω @ 4.8A, 10V 4V @ 240μA 996pF @ 400V 20nC @ 10V 6ns 10 ns 20V 11A Tc 48 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 85A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252 DRAIN Single 180W 13 ns 4V 180W Tc 100 ns 85A SWITCHING 39 ns SILICON N-Channel 11m Ω @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 76ns 48 ns 20V 55V 55V 4 V 75A 85A Tc 290A 250 mJ 10V ±20V
    IRFZ44VPBF IRFZ44VPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 55A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-220AB DRAIN Single 115W 13 ns 4V 115W Tc 105 ns 55A SWITCHING 40 ns SILICON N-Channel 16.5m Ω @ 31A, 10V 4V @ 250μA 1812pF @ 25V 67nC @ 10V 97ns 57 ns 20V 60V 60V 4 V 55A Tc 220A 10V ±20V
    IRL40SC209 IRL40SC209 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2013 StrongIRFET™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W Tc SWITCHING 0.0008Ohm 40V SILICON N-Channel 0.8m Ω @ 100A, 10V 2.4V @ 250μA 15270pF @ 25V 267nC @ 4.5V 300A 478A Tc 40V 1200A 1404 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin 38A No 3 TO-220-3 No SVHC 9.017mm 4.826mm 54Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 320W 16 ns 5V 3.8W Ta 300W Tc 240 ns 44A SWITCHING 29 ns SILICON N-Channel 54m Ω @ 26A, 10V 5V @ 250μA 2900pF @ 25V 91nC @ 10V 95ns 47 ns 30V 200V 200V 5 V 43A Tc 460 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tube 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant No 3 AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier DUAL GULL WING 260 30 R-PDSO-G2 FET General Purpose Power 1 DRAIN Single 3.8W 4.9 ns 4V 3.8W Ta 45W Tc 17A SWITCHING 0.07Ohm 19 ns SILICON N-Channel 70m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 17A Tc 68A 10V ±20V
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    		 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 Unknown 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Single 56 ns 2.4V 375W Tc 195A 188 ns N-Channel 1.25m Ω @ 100A, 10V 2.4V @ 250μA 15140pF @ 25V 270nC @ 4.5V 20V 195A Tc 40V 4.5V 10V ±20V
    IRFB3207ZPBF IRFB3207ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free Tin 170A No 3 TO-220-3 No SVHC 9.017mm 4.82mm 4.1MOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300mW 20 ns 4V 300W Tc 54 ns 170A SWITCHING 55 ns SILICON N-Channel 4.1m Ω @ 75A, 10V 4V @ 150μA 6920pF @ 50V 170nC @ 10V 68ns 20V 75V 75V 4 V 120A Tc 670A 10V ±20V
    IPB180N04S400ATMA1 IPB180N04S400ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 53 ns 40V 300W Tc 180A 0.00098Ohm 67 ns SILICON N-Channel 0.98m Ω @ 100A, 10V 4V @ 230μA 22880pF @ 25V 286nC @ 10V 24ns 58 ns 20V 180A Tc 1250 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 441W Tc 192A N-Channel 4.2m Ω @ 115A, 10V 4V @ 250μA 9500pF @ 50V 255nC @ 10V 192A Tc 100V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 19 ns 300W Tc 120A SWITCHING 0.002Ohm 75V 70 ns SILICON N-Channel 2m Ω @ 100A, 10V 3.8V @ 273μA 14400pF @ 37.5V 206nC @ 10V 26ns 22 ns 20V 120A Tc 75V 480A 1100 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 56A No 3 TO-220-3 No SVHC 15.24mm 4.69mm 40Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 380W 17 ns 4V 380W Tc 360 ns 56A SWITCHING 52 ns SILICON N-Channel 40m Ω @ 34A, 10V 4V @ 250μA 4220pF @ 25V 220nC @ 10V 64ns 50 ns 20V 200V 200V 4 V 56A Tc 220A 450 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 12 ns 650V 34W Tc 17.5A SWITCHING 0.19Ohm 53.2 ns SILICON N-Channel 190m Ω @ 7.3A, 10V 4.5V @ 730μA 1850pF @ 100V 68nC @ 10V 8.4ns 6.4 ns 20V 17.5A Tc 57.2A 484 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.826mm 20MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 FET General Purpose Power 1 TO-220AB DRAIN Single 375W 17 ns 5V 375W Tc 76A 175°C SWITCHING 56 ns SILICON N-Channel 20m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 200V 5 V 76A Tc 250 mJ 10V ±20V
    IAUT260N10S5N019ATMA1 IAUT260N10S5N019ATMA1 Infineon Technologies $0.00
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    		 download 20 Weeks Tape & Reel (TR) 2017 OptiMOS™-5 Active 1 (Unlimited) EAR99 ROHS3 Compliant 8-PowerSFN 2.4mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) PG-HSOF-8 NOT SPECIFIED NOT SPECIFIED 1 300W 21 ns 300W Tc 260A 175°C 49 ns N-Channel 1.9m Ω @ 100A, 10V 3.8V @ 210μA 11830pF @ 50V 166nC @ 10V 20V 100V 260A Tc 6V 10V ±20V
    SPA11N80C3XKSA1 SPA11N80C3XKSA1 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.65mm ROHS3 Compliant Lead Free 11A 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.83mm 4.85mm Through Hole -55°C~150°C TJ 800V MOSFET (Metal Oxide) ENHANCEMENT MODE 11A e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 800V 1 TO-220AB ISOLATED Halogen Free Single 41W 25 ns 3V 34W Tc 11A SWITCHING 0.45Ohm 72 ns SILICON N-Channel 450m Ω @ 7.1A, 10V 3.9V @ 680μA 1600pF @ 100V 85nC @ 10V 15ns 7 ns 20V 800V 11A Tc 470 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 24.99mm 5.3086mm 3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 280W 19 ns 4V 280W Tc 50 ns 200A 175°C SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A Tc 840A 10V ±20V
    IPP60R199CPXKSA1 IPP60R199CPXKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 16A No 3 TO-220-3 Through Hole -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 650V 10V ±20V
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    		 download 13 Weeks Surface Mount Cut Tape (CT) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 3 R-PSSO-G2 1 TO-252AA DRAIN Halogen Free Single 3W 12 ns 60V 3W Ta 83W Tc 45A SWITCHING 20 ns SILICON N-Channel 5.3m Ω @ 45A, 10V 2.8V @ 36μA 2000pF @ 30V 27nC @ 10V 12ns 7 ns 20V 18A Ta 45A Tc 60 mJ 6V 10V ±20V
    IRFH5210TRPBF IRFH5210TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 5 EAR99 5.9944mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 7.2 ns 4V 3.6W Ta 104W Tc 100A SWITCHING 21 ns SILICON N-Channel 14.9m Ω @ 33A, 10V 4V @ 100μA 2570pF @ 25V 59nC @ 10V 9.7ns 6.5 ns 20V 100V 55A 10A Ta 55A Tc 220A 10V ±20V
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2003 SIPMOS® Active 1 (Unlimited) 150°C -55°C 40mm ROHS3 Compliant Contains Lead Tin -2.9A 4 TO-261-4, TO-261AA 1.5mm 40mm Surface Mount -55°C~150°C TJ -60V MOSFET (Metal Oxide) 1 1 Halogen Free Single 1.8W 6.7 ns -60V 110mOhm PG-SOT223-4 1.8W Ta 2.9A 26 ns P-Channel 130mOhm @ 2.9A, 10V 4V @ 1mA 875pF @ 25V 33nC @ 10V 9ns 7 ns 20V -60V 2.9A Ta 60V 875pF 10V ±20V 130 mΩ
    IPD135N08N3GATMA1 IPD135N08N3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2008 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Halogen Free 80V 79W Tc SWITCHING 0.0135Ohm SILICON N-Channel 13.5m Ω @ 45A, 10V 3.5V @ 33μA 1730pF @ 40V 25nC @ 10V 45A 45A Tc 180A 50 mJ 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 71W 6.3 ns 71W Tc 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 10V ±20V
    IRFR4510TRPBF IRFR4510TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 143W 18 ns 3V 143W Tc 56A SWITCHING 42 ns SILICON N-Channel 13.9m Ω @ 38A, 10V 4V @ 100μA 3031pF @ 50V 81nC @ 10V 34 ns 20V 3 V 56A Tc 100V 252A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 5 EAR99 6mm ROHS3 Compliant Lead Free No 5 8-VQFN Exposed Pad No SVHC 850μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FET General Purpose Power 1 DRAIN Single 156W 15 ns 3V 156W Tc 100A SWITCHING 40V 73 ns SILICON N-Channel 1.4m Ω @ 100A, 10V 3.9V @ 150μA 6419pF @ 25V 194nC @ 10V 51ns 49 ns 20V 3 V 100A Tc 40V 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 140W 16 ns 4V 140W Tc 50 ns 56A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A 56A Tc 10V ±20V
    IRFR3410TRPBF IRFR3410TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free Tin 31A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 39MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 12 ns 4V 3W Ta 110W Tc 31A SWITCHING 40 ns SILICON N-Channel 39m Ω @ 18A, 10V 4V @ 250μA 1690pF @ 25V 56nC @ 10V 27ns 13 ns 20V 100V 100V 4 V 31A Tc 10V ±20V
    IRFB4020PBF IRFB4020PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.82mm 100MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 100mW 7.8 ns 4.9V 100W Tc 120 ns 18A AMPLIFIER 16 ns SILICON N-Channel 100m Ω @ 11A, 10V 4.9V @ 100μA 1200pF @ 50V 29nC @ 10V 12ns 6.3 ns 20V 200V 200V 4.9 V 18A Tc 52A 94 mJ 10V ±20V
    IPB60R199CPATMA1 IPB60R199CPATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2006 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 10 ns 600V 139W Tc 16A SWITCHING 50 ns SILICON N-Channel 199m Ω @ 9.9A, 10V 3.5V @ 660μA 1520pF @ 100V 43nC @ 10V 5ns 20V 16A Tc 650V 10V ±20V