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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Switching Current Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFR9N20DTRPBF IRFR9N20DTRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free 9.4A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 380mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 86W 7.5 ns 5.5V 86W Tc 9.4A SWITCHING 13 ns SILICON N-Channel 380m Ω @ 5.6A, 10V 5.5V @ 250μA 560pF @ 25V 27nC @ 10V 16ns 9.3 ns 30V 200V 200V 5.5 V 9.4A Tc 10V ±30V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 14.5MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 14 ns 4V 110W Tc 59A 175°C SWITCHING 31 ns SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 66ns 35 ns 20V 55V 4 V 42A Tc 240A 82 mJ 10V ±20V
    IPD35N10S3L26ATMA1 IPD35N10S3L26ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 71W Tc 0.0319Ohm 100V SILICON N-Channel 24m Ω @ 35A, 10V 2.4V @ 39μA 2700pF @ 25V 39nC @ 10V 35A 35A Tc 100V 140A 175 mJ 4.5V 10V ±20V
    IRFR7446TRPBF IRFR7446TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 9.8 ns 3V 98W Tc 56A SWITCHING 40V 32 ns SILICON N-Channel 3.9m Ω @ 56A, 10V 3.9V @ 100μA 3150pF @ 25V 130nC @ 10V 13ns 20 ns 20V 56A Tc 40V 520A 6V 10V ±20V
    IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 55V 100W Tc 30A SILICON N-Channel 23m Ω @ 22A, 10V 2V @ 50μA 1091pF @ 25V 42nC @ 10V 30A Tc 120A 150 mJ 4.5V 10V ±20V
    BSZ075N08NS5ATMA1 BSZ075N08NS5ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 DRAIN Halogen Free Single 69W 10 ns 80V 69W Tc 40A SWITCHING 0.0075Ohm 19 ns SILICON N-Channel 7.5m Ω @ 20A, 10V 3.8V @ 36μA 2080pF @ 40V 29.5nC @ 10V 4ns 4 ns 20V 40A Tc 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 9.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 15MOhm Surface Mount -55°C~150°C TJ 80V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 8.3 ns 4V 2.5W Tc 56 ns 9.3A SWITCHING 30 ns SILICON N-Channel 15m Ω @ 5.6A, 10V 4V @ 250μA 1510pF @ 25V 53nC @ 10V 7.5ns 12 ns 20V 80V 80V 4 V 9.3A Tc 74A 10V ±20V
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    		 12 Weeks Surface Mount Tape & Reel (TR) 1995 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 9.7A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.8W 4.5 ns 3.8W Ta 48W Tc 9.7A SWITCHING 0.2Ohm 32 ns SILICON N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 9.7A Tc 10V ±20V
    IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 10 ns 100V 100W Tc 50A 0.0199Ohm 29 ns SILICON N-Channel 15m Ω @ 50A, 10V 2.4V @ 60μA 4180pF @ 25V 64nC @ 10V 5ns 20V 50A Tc 200A 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead 30A No 3 LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 35mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 68W 8.9 ns 2V 3.8W Ta 68W Tc 30A SWITCHING 21 ns SILICON N-Channel 35m Ω @ 16A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 100ns 29 ns 16V 55V 55V 2 V 30A Tc 4V 10V ±16V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 42A No 3 HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.2606mm 6.22mm 8MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 130W 17 ns 3V 130W Tc 42 ns 89A SWITCHING 33 ns SILICON N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 150ns 70 ns 16V 55V 55V 3 V 42A Tc 4.5V 10V ±16V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 4A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 800V MOSFET (Metal Oxide) 1 63W 25 ns 800V 1.1Ohm PG-TO252-3 63W Tc 4A 72 ns N-Channel 1.3Ohm @ 2.5A, 10V 3.9V @ 240μA 570pF @ 100V 31nC @ 10V 15ns 12 ns 20V 4A Tc 800V 570pF 10V ±20V 1.3 Ω
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 1 DRAIN Halogen Free Single 11 ns 80V 2.5W Ta 74W Tc 82A SWITCHING 19 ns SILICON N-Channel 6.1m Ω @ 41A, 10V 3.8V @ 41μA 2500pF @ 40V 33nC @ 10V 6ns 5 ns 20V 82A Tc 50 mJ 6V 10V ±20V
    IRLR2905TRLPBF IRLR2905TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 20A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
    IPD65R380C6BTMA1 IPD65R380C6BTMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 83W Tc SWITCHING 0.38Ohm 650V SILICON N-Channel 380m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V 10.6A 10.6A Tc 650V 29A 215 mJ 10V ±20V
    BSC080P03LSGAUMA1 BSC080P03LSGAUMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ no Not For New Designs 3 (168 Hours) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W -30V 2.5W Ta 89W Tc 16A SWITCHING SILICON P-Channel 8m Ω @ 30A, 10V 2.2V @ 250μA 6140pF @ 15V 122.4nC @ 10V 87ns 25V 16A Ta 30A Tc 30V 10V ±25V
    IRF630NPBF IRF630NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.69mm 300mOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 82W 7.9 ns 4V 82W Tc 176 ns 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 200V 4 V 9.3A Tc 94 mJ 10V ±20V
    BSP315PH6327XTSA1 BSP315PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 1999 SIPMOS® yes Active 1 (Unlimited) 4 SMD/SMT EAR99 6.5mm ROHS3 Compliant Lead Free Tin No 4 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.8mm 6.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE PG-SOT223-4 e3 DUAL GULL WING 260 40 4 1 Other Transistors 1 DRAIN Halogen Free Single 1.8W 24 ns -1.5V -60V 1.8W Ta 46 ns 1.17A 150°C 0.8Ohm 32 ns SILICON P-Channel 800m Ω @ 1.17A, 10V 2V @ 160μA 160pF @ 25V 7.8nC @ 10V 9ns 19 ns 20V -60V -60V -1.5 V 1.17A Ta 60V 4.5V 10V ±20V
    IPD50N04S4L08ATMA1 IPD50N04S4L08ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 4 ns 40V 46W Tc 50A 11 ns SILICON N-Channel 7.3m Ω @ 50A, 10V 2.2V @ 17μA 2340pF @ 25V 30nC @ 10V 8ns 18 ns 20V 50A Tc 200A 55 mJ 4.5V 10V +20V, -16V
    IRFR3707ZTRPBF IRFR3707ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 56A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.26mm 6.22mm 9.5MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 50W 8 ns 1.8V 50W Tc 56A SWITCHING 12 ns SILICON N-Channel 9.5m Ω @ 15A, 10V 2.25V @ 25μA 1150pF @ 15V 14nC @ 4.5V 11ns 3.3 ns 20V 30V 30V 1.8 V 56A Tc 220A 42 mJ 4.5V 10V ±20V
    IRLR9343TRPBF IRLR9343TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm 93MOhm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 79W 9.5 ns 79W Tc -20A AMPLIFIER 21 ns SILICON P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 660pF @ 50V 47nC @ 10V 24ns 9.5 ns 20V -55V 20A Tc 55V 60A 4.5V 10V ±20V
    IRFR220NTRPBF IRFR220NTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free Tin 5A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 600MOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 TO-252AA DRAIN Single 43W 6.4 ns 4V 43W Tc 140 ns 5A 5A 175°C SWITCHING 20 ns SILICON N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 11ns 12 ns 20V 200V 200V 4 V 5A 5A Tc 20A 46 mJ 10V ±20V
    IRF7465TRPBF IRF7465TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free Tin 1.9A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 280mOhm Surface Mount -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 Single 2.5W 7 ns 5.5V 2.5W Ta 1.9A SWITCHING 10 ns SILICON N-Channel 280m Ω @ 1.14A, 10V 5.5V @ 250μA 330pF @ 25V 15nC @ 10V 1.2ns 9 ns 30V 150V 150V 5.5 V 1.9A Ta 10V ±30V
    IPZ40N04S58R4ATMA1 IPZ40N04S58R4ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 34W Tc 40A 0.0099Ohm SILICON N-Channel 8.4m Ω @ 20A, 10V 3.4V @ 10μA 771pF @ 25V 13.7nC @ 10V 40A Tc 160A 24 mJ 7V 10V ±20V
    BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tape & Reel (TR) 2000 OptiMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Halogen Free 50W 2.2V 30V 4.2mOhm PG-TDSON-8-5 2.5W Ta 50W Tc 80A N-Channel 5mOhm @ 30A, 10V 2.2V @ 250μA 2800pF @ 15V 35nC @ 10V 4ns 20V 18A Ta 80A Tc 30V 2.8nF 4.5V 10V ±20V 5 mΩ
    IRLI530NPBF IRLI530NPBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free Tin 11A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 Full Pack No SVHC 16.12mm 4.826mm 120mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB ISOLATED Single 33W 7.2 ns 2V 41W Tc 210 ns 12A SWITCHING 2kV 30 ns SILICON N-Channel 100m Ω @ 9A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 100V 2 V 12A Tc 60A 4V 10V ±16V
    SPP18P06PHXKSA1 SPP18P06PHXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2006 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 81.1W 12 ns -60V 81.1W Ta 18.7A 25 ns SILICON P-Channel 130m Ω @ 13.2A, 10V 4V @ 1mA 860pF @ 25V 28nC @ 10V 5.8ns 11 ns 20V 18.7A Ta 60V 74.8A 10V ±20V
    IRF1010EPBF IRF1010EPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin 84A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 2.54mm 16.51mm 4.826mm 12mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 170W 12 ns 4V 200W Tc 84A SWITCHING 48 ns SILICON N-Channel 12m Ω @ 50A, 10V 4V @ 250μA 3210pF @ 25V 130nC @ 10V 78ns 53 ns 20V 60V 60V 4 V 75A 84A Tc 10V ±20V
    IRF6215PBF IRF6215PBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 1998 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin -13A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 290mOhm Through Hole -55°C~175°C TJ -150V MOSFET (Metal Oxide) ENHANCEMENT MODE Other Transistors 1 TO-220AB DRAIN Single 110W 14 ns -4V 110W Tc 240 ns -13A SWITCHING 53 ns SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V -150V -4 V 13A Tc 150V 44A 10V ±20V
    IRLIZ44NPBF IRLIZ44NPBF Infineon Technologies $0.00
    RFQ

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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Contains Lead, Lead Free 30A 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 25mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 38W 11 ns 2V 45W Tc 120 ns 30A SWITCHING 2kV 26 ns SILICON N-Channel 22m Ω @ 17A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 84ns 15 ns 16V 55V 55V 2 V 28A 30A Tc 4V 10V ±16V