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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    SPD50P03LGBTMA1 SPD50P03LGBTMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2007 OptiMOS™ no Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-5, DPak (4 Leads + Tab), TO-252AD not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G4 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc 0.007Ohm 30V SILICON P-Channel 7m Ω @ 50A, 10V 2V @ 250μA 6880pF @ 25V 126nC @ 10V 50A 50A Tc 30V 200A 256 mJ 10V ±20V
    IRFZ48NSTRLPBF IRFZ48NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 64A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 14MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 130W 12 ns 4V 100 ns 3.8W Ta 130W Tc 100 ns 64A SWITCHING 34 ns SILICON N-Channel 14m Ω @ 32A, 10V 4V @ 250μA 1970pF @ 25V 81nC @ 10V 78ns 50 ns 20V 55V 55V 4 V 64A Tc 10V ±20V
    IRF520NPBF IRF520NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 9.7A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 48W 4.5 ns 4V 48W Tc 150 ns 9.7A SWITCHING 0.2Ohm 32 ns SILICON N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 100V 4 V 9.5A 9.7A Tc 10V ±20V
    IRF9530NPBF IRF9530NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin -14A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 200mOhm Through Hole -55°C~175°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 Other Transistors 1 TO-220AB DRAIN Single 79W 15 ns -4V 79W Tc 190 ns -14A SWITCHING 45 ns SILICON P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 14A Tc 100V 56A 250 mJ 10V ±20V
    IRL530NPBF IRL530NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 17A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 100mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 260 30 FET General Purpose Power 1 TO-220AB DRAIN Single 79W 7.2 ns 2V 79W Tc 210 ns 17A SWITCHING 30 ns SILICON N-Channel 100m Ω @ 9A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 100V 2 V 17A Tc 60A 4V 10V ±16V
    IPP50R380CEXKSA1 IPP50R380CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB Halogen Free Single 73W 7.2 ns 500V 73W Tc 32.4A SWITCHING 35 ns SILICON N-Channel 380m Ω @ 3.2A, 13V 3.5V @ 260μA 584pF @ 100V 24.8nC @ 10V 5.6ns 8.6 ns 20V 550V Super Junction 9.9A Tc 13V ±20V
    IRLZ34NPBF IRLZ34NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 30A No 3 AVALANCHE RATED TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 35mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 1 TO-220AB DRAIN Single 56W 8.9 ns 2V 68W Tc 110 ns 30A SWITCHING 21 ns SILICON N-Channel 35m Ω @ 16A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 100ns 29 ns 16V 55V 55V 2 V 30A Tc 4V 10V ±16V
    IRL3103PBF IRL3103PBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 64A No 3 HIGH RELIABILITY, AVALANCHE RATED TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 12MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 83W 8.9 ns 1V 94W Tc 64A SWITCHING 14 ns SILICON N-Channel 12m Ω @ 34A, 10V 1V @ 250μA 1650pF @ 25V 33nC @ 4.5V 120ns 9.1 ns 16V 30V 30V 1 V 56A 64A Tc 220A 4.5V 10V ±16V
    BSB028N06NN3GXUMA1 BSB028N06NN3GXUMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2012 OptiMOS™ yes Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant Lead Free 7 3-WDSON No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED 3 YES R-MBCC-N3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 78W 21 ns 3V 2.2W Ta 78W Tc 90A SWITCHING 0.0028Ohm 38 ns SILICON N-Channel 2.8m Ω @ 30A, 10V 4V @ 102μA 12000pF @ 30V 143nC @ 10V 9ns 6 ns 20V 60V 22A 22A Ta 90A Tc 360A 590 mJ 10V ±20V
    IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 22W Tc SWITCHING 0.36Ohm 600V SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 9A Tc 600V 26A 27 mJ 10V ±20V
    IPB120N04S402ATMA1 IPB120N04S402ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 27 ns 40V 158W Tc 120A 0.0018Ohm 30 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 4V @ 110μA 10740pF @ 25V 134nC @ 10V 16ns 20V 120A Tc 480A 480 mJ 10V ±20V
    IRFU7440PBF IRFU7440PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.39mm 2.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 DRAIN Single 140W 11 ns 3V 140W Tc 90A SWITCHING 51 ns SILICON N-Channel 2.4m Ω @ 90A, 10V 3.9V @ 100μA 4610pF @ 25V 134nC @ 10V 39ns 34 ns 20V 40V 3 V 90A Tc 760A 6V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 7 R-PSSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 214W 23 ns 2.8V 80V 214W Tc 160A SWITCHING 0.003Ohm 45 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.5V @ 155μA 8110pF @ 40V 117nC @ 10V 79ns 14 ns 20V 160A Tc 640A 6V 10V ±20V
    IPP90R1K2C3XKSA1 IPP90R1K2C3XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 83W 70 ns 900V 83W Tc 5.1A SWITCHING 400 ns SILICON N-Channel 1.2 Ω @ 2.8A, 10V 3.5V @ 310μA 710pF @ 100V 28nC @ 10V 20ns 40 ns 20V 5.1A Tc 68 mJ 10V ±20V
    IRFB3306GPBF IRFB3306GPBF Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Tube 2009 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant 3 TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 230W 15 ns 230W Tc 160A SWITCHING 0.0042Ohm 40 ns SILICON N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 76ns 77 ns 20V 60V 4 V 120A Tc 620A 10V ±20V
    IPB180N08S402ATMA1 IPB180N08S402ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 ULTRA LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30 ns 80V 277W Tc 180A 0.0022Ohm 50 ns SILICON N-Channel 2.2m Ω @ 100A, 10V 4V @ 220μA 11550pF @ 25V 167nC @ 10V 15ns 20V 180A Tc 640 mJ 10V ±20V
    IPP100N08S2L07AKSA1 IPP100N08S2L07AKSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Tube 2006 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 19 ns 75V 300W Tc 100A 0.0068Ohm 85 ns SILICON N-Channel 6.8m Ω @ 80A, 10V 2V @ 250μA 5400pF @ 25V 246nC @ 10V 56ns 22 ns 20V 100A Tc 400A 810 mJ 4.5V 10V ±20V
    IPB65R095C7ATMA2 IPB65R095C7ATMA2 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) CoolMOS™ C7 Active 1 (Unlimited) ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 128W Tc N-Channel 95m Ω @ 11.8A, 10V 4V @ 590μA 2140pF @ 400V 45nC @ 10V 24A Tc 650V 10V ±20V
    IPB60R280C6ATMA1 IPB60R280C6ATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2008 CoolMOS™ no Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 104W 13 ns 600V 104W Tc 13.8A SWITCHING 0.28Ohm 100 ns SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 11ns 12 ns 20V 13.8A Tc 40A 284 mJ 10V ±20V
    IRFU6215PBF IRFU6215PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free -13A No 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 580MOhm Through Hole -55°C~175°C TJ -150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 110W 14 ns -4V 110W Tc -13A SWITCHING 53 ns SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V -150V -4 V 13A Tc 150V 44A 10V ±20V
    IPA80R650CEXKSA2 IPA80R650CEXKSA2 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 800V 33W Tc 8A SWITCHING 0.65Ohm SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 45nC @ 10V 8A 8A Ta 24A 340 mJ 10V ±20V
    IPB108N15N3GATMA1 IPB108N15N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 214W 17 ns 3V 150V 214W Tc 83A SWITCHING 32 ns SILICON N-Channel 10.8m Ω @ 83A, 10V 4V @ 160μA 3230pF @ 75V 55nC @ 10V 35ns 9 ns 20V 83A Tc 8V 10V ±20V
    IRF2204PBF IRF2204PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin 210A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 3.6Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 FET General Purpose Power 1 TO-220AB DRAIN Single 330W 15 ns 4V 330W Tc 210A SWITCHING 62 ns SILICON N-Channel 3.6m Ω @ 130A, 10V 4V @ 250μA 5890pF @ 25V 200nC @ 10V 140ns 110 ns 20V 40V 40V 4 V 75A 210A Tc 850A 460 mJ 10V ±20V
    IRFH8334TRPBF IRFH8334TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT 260 30 R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.2W 8.3 ns 3.2W Ta 30W Tc 14A SWITCHING 0.009Ohm 7 ns SILICON N-Channel 9m Ω @ 20A, 10V 2.35V @ 25μA 1180pF @ 10V 15nC @ 10V 14ns 4.6 ns 20V 30V 1.8 V 14A Ta 44A Tc 35 mJ 4.5V 10V ±20V
    IRF5802TRPBF IRF5802TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 6 SMD/SMT EAR99 2.9972mm ROHS3 Compliant Contains Lead Tin 900mA No 6 SOT-23-6 Thin, TSOT-23-6 No SVHC 900μm 1.4986mm 1.2Ohm Surface Mount -55°C~150°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING FET General Purpose Power 1 Single 2W 6 ns 5.5V 2W Ta 900mA SWITCHING 7.5 ns SILICON N-Channel 1.2 Ω @ 540mA, 10V 5.5V @ 250μA 88pF @ 25V 6.8nC @ 10V 1.6ns 9.2 ns 30V 150V 150V 5.5 V 0.9A 900mA Ta 7A 9.5 mJ 10V ±30V
    IPD090N03LGATMA1 IPD090N03LGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 DRAIN Single 42W 4 ns 42W Tc 40A SWITCHING 15 ns SILICON N-Channel 9m Ω @ 30A, 10V 2.2V @ 250μA 1600pF @ 15V 15nC @ 10V 3ns 2.6 ns 20V 30V 40A Tc 280A 70 mJ 4.5V 10V ±20V
    IPD60R3K3C6ATMA1 IPD60R3K3C6ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Not For New Designs 1 (Unlimited) 2 6.73mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.41mm 6.22mm Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Single 8 ns 600V 18.1W Tc 1.7A SWITCHING 40 ns SILICON N-Channel 3.3 Ω @ 500mA, 10V 3.5V @ 40μA 93pF @ 100V 4.6nC @ 10V 10ns 60 ns 30V 1.7A Tc 4A 6 mJ 10V ±20V
    IPD30N06S4L23ATMA2 IPD30N06S4L23ATMA2 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 6.73mm ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant 2.41mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 DRAIN Halogen Free Single 4 ns 60V 36W Tc 30A SWITCHING 15 ns SILICON N-Channel 23m Ω @ 30A, 10V 2.2V @ 10μA 1560pF @ 25V 21nC @ 10V 1ns 3 ns 16V 30A Tc 120A 18 mJ 4.5V 10V ±16V
    BSZ058N03LSGATMA1 BSZ058N03LSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 4.6 ns 30V 2.1W Ta 45W Tc 15A SWITCHING 19 ns SILICON N-Channel 5.8m Ω @ 20A, 10V 2.2V @ 250μA 2400pF @ 15V 30nC @ 10V 3.6ns 3.2 ns 20V 40A 15A Ta 40A Tc 55 mJ 4.5V 10V ±20V
    IRLL2703TRPBF IRLL2703TRPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 1999 HEXFET® Not For New Designs 1 (Unlimited) 4 EAR99 6.6802mm ROHS3 Compliant Contains Lead 3.9A No 3 HIGH RELIABILITY, AVALANCHE RATED TO-261-4, TO-261AA 1.4478mm 3.7mm 60mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 R-PDSO-G4 1 1V DRAIN Single 2.1W 7.4 ns 1W Ta 3.9A SWITCHING 6.9 ns SILICON N-Channel 45m Ω @ 3.9A, 10V 2.4V @ 250μA 530pF @ 25V 14nC @ 5V 24ns 14 ns 16V 30V 3.9A Ta 16A 180 mJ 4V 10V ±16V