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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPP50R140CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 192W | 35 ns | 500V | 192W Tc | 23A | SWITCHING | 0.14Ohm | SILICON | N-Channel | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 2540pF @ 100V | 64nC @ 10V | 14ns | 8 ns | 3.5V | 500V | 23A Tc | 550V | 56A | 616 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA60R099P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 20 ns | 600V | 34W Tc | 37.9A | 50 ns | N-Channel | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 3330pF @ 100V | 70nC @ 10V | 10ns | 5 ns | 30V | 37.9A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP048N12N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 31 ns | 120V | 300W Tc | 100A | SWITCHING | 0.0048Ohm | 64 ns | SILICON | N-Channel | 4.8m Ω @ 100A, 10V | 4V @ 230μA | 12000pF @ 60V | 182nC @ 10V | 55ns | 19 ns | 20V | 100A Tc | 400A | 740 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP65R110CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 16 ns | 650V | 277.8W Tc | 31.2A | SWITCHING | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 700V | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP65R125C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ C7 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 14 ns | 650V | 110mOhm | PG-TO220-3 | 101W Tc | 18A | 71 ns | N-Channel | 125mOhm @ 8.9A, 10V | 4V @ 440μA | 1670pF @ 400V | 35nC @ 10V | 15ns | 8 ns | 20V | 18A Tc | 650V | 1.67nF | 10V | ±20V | 125 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW32N50C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED, HIGH VOLTAGE | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AA | 284W Tc | 0.11Ohm | 500V | SILICON | N-Channel | 110m Ω @ 20A, 10V | 3.9V @ 1.8mA | 4200pF @ 25V | 170nC @ 10V | 32A | 32A Tc | 560V | 96A | 1100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R060P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 164W | 23 ns | 164W Tc | 48A | 150°C | SWITCHING | 0.06Ohm | 79 ns | SILICON | N-Channel | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 2895pF @ 400V | 67nC @ 10V | 20V | 600V | 48A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R110CFDAFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | Automotive, AEC-Q101, CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | HIGH RELIABILITY | TO-247-3 | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 16 ns | 650V | 277.8W Tc | 31.2A | SWITCHING | 0.11Ohm | 68 ns | SILICON | N-Channel | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 3240pF @ 100V | 118nC @ 10V | 11ns | 6 ns | 20V | 31.2A Tc | 99.6A | 845 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N65C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 20.7A | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | TO-220AB | Halogen Free | Single | 208W | 650V | 208W Tc | 20.7A | SWITCHING | 67 ns | SILICON | N-Channel | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 114nC @ 10V | 5ns | 4.5 ns | 20V | 650V | 20.7A Tc | 690 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSR202NL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.21.00.95 | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 20V | 500mW Ta | 3.8A | 0.021Ohm | SILICON | N-Channel | 21m Ω @ 3.8A, 4.5V | 1.2V @ 30μA | 1147pF @ 10V | 8.8nC @ 4.5V | 16.7ns | 12V | 3.8A Ta | 60 pF | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSR315PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | SIPMOS® | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 8 ns | -1.5V | -60V | 620mOhm | PG-SC-59 | 500mW Ta | 620mA | 21 ns | P-Channel | 800mOhm @ 620mA, 10V | 2V @ 160μA | 176pF @ 25V | 6nC @ 10V | 28ns | 20 ns | 20V | 620mA Ta | 60V | 176pF | 4.5V 10V | ±20V | 800 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS87H6327FTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | SIPMOS® | yes | Not For New Designs | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 4.5mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-243AA | No SVHC | 1.5mm | 2.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 4 | R-PDSO-F4 | 1 | 1 | DRAIN | Single | 1W | 3.7 ns | 1.5V | 240V | 1W Ta | 290mA | 6Ohm | 17.6 ns | SILICON | N-Channel | 6 Ω @ 260mA, 10V | 1.8V @ 108μA | 97pF @ 25V | 5.5nC @ 10V | 3.5ns | 27.3 ns | 20V | 240V | 240V | 1.5 V | 0.26A | 260mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPP50R199CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 139W | 35 ns | 3V | 139W Tc | 17A | SWITCHING | 0.199Ohm | 80 ns | SILICON | N-Channel | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 1800pF @ 100V | 45nC @ 10V | 14ns | 10 ns | 20V | 500V | 17A Tc | 550V | 40A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPW60R180C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2008 | CoolMOS™ C7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | SWITCHING | 0.18Ohm | 600V | SILICON | N-Channel | 180m Ω @ 5.3A, 10V | 4V @ 260μA | 1080pF @ 400V | 24nC @ 10V | 13A | 13A Tc | 600V | 45A | 53 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3805PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 3.3MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 130W | 150 ns | 4V | 300W Tc | 75A | SWITCHING | 93 ns | SILICON | N-Channel | 3.3m Ω @ 75A, 10V | 4V @ 250μA | 7960pF @ 25V | 290nC @ 10V | 20ns | 78 ns | 20V | 55V | 75A Tc | 890A | 940 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP410N30NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-220-3 | 20.7mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | Halogen Free | 300W | 16 ns | 300V | 300W Tc | 44A | 175°C | 43 ns | SILICON | N-Channel | 41m Ω @ 44A, 10V | 4V @ 270μA | 7180pF @ 100V | 87nC @ 10V | 20V | 300V | 44A Tc | 240 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4127PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 341W Tc | 75A | N-Channel | 21m Ω @ 44A, 10V | 5V @ 250μA | 5380pF @ 50V | 150nC @ 10V | 75A Tc | 200V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS8409-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2016 | Automotive, AEC-Q101, HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 375W Tc | 240A | N-Channel | 0.75m Ω @ 100A, 10V | 2.4V @ 250μA | 16488pF @ 25V | 266nC @ 4.5V | 240A Tc | 40V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4137PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.31mm | 69MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 341W | 18 ns | 3V | 341W Tc | 38A | 34 ns | N-Channel | 69m Ω @ 24A, 10V | 5V @ 250μA | 5168pF @ 50V | 125nC @ 10V | 23ns | 20 ns | 20V | 300V | 38A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R099C6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 278W | 10.6 ns | 650V | 278W Tc | 38A | SWITCHING | 0.099Ohm | 77 ns | SILICON | N-Channel | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 2780pF @ 100V | 127nC @ 10V | 9ns | 6 ns | 20V | 38A Tc | 845 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SN7002NH6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | SIPMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | 2.4 ns | 360mW Ta | 200mA | 5Ohm | 60V | 5.3 ns | SILICON | N-Channel | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 45pF @ 25V | 1.5nC @ 10V | 3.2ns | 3.6 ns | 20V | 0.2A | 200mA Ta | 60V | 4.2 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP77N06S212AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 55V | 158W Tc | 77A | 0.012Ohm | SILICON | N-Channel | 12m Ω @ 38A, 10V | 4V @ 93μA | 1770pF @ 25V | 60nC @ 10V | 77A Tc | 308A | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3307PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | 130A | No | 3 | TO-220-3 | No SVHC | 2.54mm | 4.82mm | 4.826mm | 6.3MOhm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 200W | 26 ns | 4V | 200W Tc | 130A | SWITCHING | 51 ns | SILICON | N-Channel | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 5150pF @ 50V | 180nC @ 10V | 120ns | 63 ns | 20V | 75V | 75V | 4 V | 75A | 130A Tc | 270 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPL65R130C7AUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | CoolMOS™ C7 | Active | 2A (4 Weeks) | 4 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | DRAIN | Halogen Free | Single | 102W | 11 ns | 650V | 102W Tc | 15A | SWITCHING | 87 ns | SILICON | N-Channel | 130m Ω @ 4.4A, 10V | 4V @ 440μA | 1670pF @ 400V | 35nC @ 10V | 5.3ns | 12 ns | 20V | 650V | 15A Tc | 75A | 89 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPAN80R280P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2018 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 30W Tc | SWITCHING | 0.28Ohm | 800V | SILICON | N-Channel | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 1200pF @ 500V | 36nC @ 10V | 17A Tc | 800V | 45A | 43 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI3205PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.7442mm | ROHS3 Compliant | Lead Free | 64A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-220-3 Full Pack | No SVHC | 9.8mm | 4.826mm | 8mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 63W | 14 ns | 4V | 63W Tc | 170 ns | 64A | SWITCHING | 2kV | 43 ns | SILICON | N-Channel | 8m Ω @ 34A, 10V | 4V @ 250μA | 4000pF @ 25V | 170nC @ 10V | 100ns | 70 ns | 20V | 55V | 55V | 4 V | 56A | 64A Tc | 480 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP020N06NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 214W | 24 ns | 60V | 3W Ta 214W Tc | 120A | SWITCHING | 0.002Ohm | 51 ns | SILICON | N-Channel | 2m Ω @ 100A, 10V | 2.8V @ 143μA | 7800pF @ 30V | 106nC @ 10V | 45ns | 19 ns | 20V | 60V | 29A | 29A Ta 120A Tc | 480A | 420 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPS65R1K4C6AKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead | 3 | TO-251-3 Stub Leads, IPak | not_compliant | 6.22mm | 2.39mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1 | Halogen Free | Single | 28W | 7.7 ns | 650V | 28W Tc | 3.2A | 33 ns | N-Channel | 1.4 Ω @ 1A, 10V | 3.5V @ 100μA | 225pF @ 100V | 10.5nC @ 10V | 20V | 3.2A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU2405PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2000 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 56A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.3876mm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 110W | 15 ns | 110W Tc | 56A | SWITCHING | 0.016Ohm | 55 ns | SILICON | N-Channel | 16m Ω @ 34A, 10V | 4V @ 250μA | 2430pF @ 25V | 110nC @ 10V | 130ns | 78 ns | 20V | 55V | 56A Tc | 220A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFS4410TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | 96A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 10MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 200W | 24 ns | 4V | 200W Tc | 96A | SWITCHING | 55 ns | SILICON | N-Channel | 10m Ω @ 58A, 10V | 4V @ 150μA | 5150pF @ 50V | 180nC @ 10V | 80ns | 50 ns | 20V | 100V | 4 V | 75A | 88A Tc | 220 mJ | 10V | ±20V |