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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFS7787TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 11 ns | 125W Tc | 76A | SWITCHING | 0.0084Ohm | 75V | 51 ns | SILICON | N-Channel | 8.4m Ω @ 46A, 10V | 3.7V @ 100μA | 4020pF @ 25V | 109nC @ 10V | 48ns | 39 ns | 20V | 76A Tc | 75V | 280A | 209 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA80R1K0CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 1997 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-220-3 Full Pack | 19.6mm | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 32W | 25 ns | 800V | 32W Tc | 5.7A | 150°C | SWITCHING | 0.95Ohm | 72 ns | SILICON | N-Channel | 950m Ω @ 3.6A, 10V | 3.9V @ 250μA | 785pF @ 100V | 31nC @ 10V | 20V | 800V | 5.7A Tc | 230 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFHS8342TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | 6-PowerVDFN | No SVHC | 16MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W | 5.9 ns | 1.8V | 2.1W Ta | 8.8A | SWITCHING | 5.2 ns | SILICON | N-Channel | 16m Ω @ 8.5A, 10V | 2.35V @ 25μA | 600pF @ 25V | 8.7nC @ 10V | 15ns | 5 ns | 20V | 30V | 1.8 V | 8.5A | 8.8A Ta 19A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM3911TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8 | 8-PowerTDFN | No SVHC | 92mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 4V | 2.8W Ta 29W Tc | 20A | SWITCHING | 100V | SILICON | N-Channel | 115m Ω @ 6.3A, 10V | 4V @ 35μA | 760pF @ 50V | 26nC @ 10V | 3.2A | 3.2A Ta 20A Tc | 100V | 36A | 41 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R650CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 3 (168 Hours) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | 3 | TO-252-3 | 3.949996g | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 47W | 1 | DRAIN | N-CHANNEL | Single | 47W | 6 ns | 650mOhm | 6.1A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 27 ns | 5ns | 13 ns | 20V | 500V | 500V | 342pF | 650 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024NTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 45W Tc | SWITCHING | 0.08Ohm | 55V | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 17A | 17A Tc | 55V | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024NTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 45W Tc | SWITCHING | 0.08Ohm | 55V | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 17A | 17A Tc | 55V | 72A | 68 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ058N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 30V | 2.1W Ta 45W Tc | 14A | SWITCHING | 0.0064Ohm | SILICON | N-Channel | 5m Ω @ 20A, 10V | 2V @ 250μA | 3100pF @ 15V | 40nC @ 10V | 3.8ns | 20V | 40A | 14A Ta 40A Tc | 55 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPD60R2K0C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | yes | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7 ns | 600V | 22.3W Tc | 2.4A | SWITCHING | 2Ohm | 30 ns | SILICON | N-Channel | 2 Ω @ 760mA, 10V | 3.5V @ 60μA | 140pF @ 100V | 6.7nC @ 10V | 50 ns | 20V | 2.4A Tc | 6A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO110N03MSGXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Active | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 1.56W | 7.8 ns | 30V | 1.56W Ta | 10A | SWITCHING | 9.5 ns | SILICON | N-Channel | 11m Ω @ 12.1A, 10V | 2V @ 250μA | 1500pF @ 15V | 20nC @ 10V | 4.4ns | 4.4 ns | 20V | 10A Ta | 20 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7821TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | THROUGH-HOLE | 260 | 30 | NO | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-251AA | DRAIN | 75W Tc | SWITCHING | 0.01Ohm | 30V | SILICON | N-Channel | 10m Ω @ 15A, 10V | 1V @ 250μA | 1030pF @ 15V | 14nC @ 4.5V | 65A | 65A Tc | 30V | 260A | 230 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD5N25S3430ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 3 ns | 250V | 370mOhm | PG-TO252-3-313 | 41W Tc | 5A | 8 ns | N-Channel | 430mOhm @ 5A, 10V | 4V @ 13μA | 422pF @ 25V | 6.2nC @ 10V | 2ns | 5 ns | 20V | 5A Tc | 250V | 422pF | 10V | ±20V | 430 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC094N06LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.1W | 4 ns | 36W Tc | 11A | 150°C | SWITCHING | 0.0094Ohm | 14 ns | SILICON | N-Channel | 9.4m Ω @ 24A, 10V | 2.3V @ 14μA | 1300pF @ 30V | 9.4nC @ 4.5V | 20V | 60V | 47A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0501NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.1W Ta 50W Tc | 40A | SWITCHING | 0.0025Ohm | SILICON | N-Channel | 2m Ω @ 20A, 10V | 2V @ 250μA | 2000pF @ 15V | 33nC @ 10V | 25A | 25A Ta 40A Tc | 160A | 40 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R950CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | CoolMOS™ | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 9 ns | 650V | 36.7W Tc | 3.9A | SWITCHING | 0.95Ohm | 43 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 4.5V @ 200μA | 380pF @ 100V | 14.1nC @ 10V | 6.5ns | 13.8 ns | 20V | 700V | 3.9A Tc | 11A | 50 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S409ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 6.5mm | ROHS3 Compliant | Tin | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.3mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 15 ns | 60V | 71W Tc | 50A | 0.009Ohm | 20 ns | SILICON | N-Channel | 9m Ω @ 50A, 10V | 4V @ 34μA | 3785pF @ 25V | 47.1nC @ 10V | 40ns | 5 ns | 20V | 50A Tc | 200A | 87 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R950C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead, Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | Halogen Free | Single | 37W | 6.6 ns | 650V | 37W Tc | 4.5A | SWITCHING | 0.95Ohm | 41 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 3.5V @ 200μA | 328pF @ 100V | 15.3nC @ 10V | 5.2ns | 13.6 ns | 20V | 650V | 4.5A Tc | 50 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSO040N03MSGXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Active | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Tin | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | 1.56W | 1.56W Ta | 16A | SWITCHING | 0.004Ohm | 30V | SILICON | N-Channel | 4m Ω @ 20A, 10V | 2V @ 250μA | 5700pF @ 15V | 73nC @ 10V | 9ns | 20V | 16A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR6215TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.295Ohm | 150V | SILICON | P-Channel | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 860pF @ 25V | 66nC @ 10V | 13A | 13A Tc | 150V | 44A | 310 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead | Tin | 64A | No | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 12MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 110W | 8.9 ns | 94W Tc | 64A | SWITCHING | 14 ns | SILICON | N-Channel | 12m Ω @ 34A, 10V | 1V @ 250μA | 1650pF @ 25V | 33nC @ 4.5V | 120ns | 9.1 ns | 16V | 30V | 64A Tc | 220A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH7934TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 5.2324mm | ROHS3 Compliant | No | 8 | 8-PowerTDFN | No SVHC | 1.1684mm | 6.1468mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W | 12 ns | 3.1W Ta | 24A | SWITCHING | 0.0035Ohm | 14 ns | SILICON | N-Channel | 3.5m Ω @ 24A, 10V | 2.35V @ 50μA | 3100pF @ 15V | 30nC @ 4.5V | 16ns | 7.5 ns | 20V | 30V | 30V | 1.8 V | 76A | 24A Ta 76A Tc | 190A | 97 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S409ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2010 | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | not_compliant | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F8 | AEC-Q101 | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL | 0.0086Ohm | 40V | METAL-OXIDE SEMICONDUCTOR | SILICON | 20A | 80A | 145 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ146N10LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1010ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W | 17 ns | 140W Tc | 42A | SWITCHING | 0.0075Ohm | 42 ns | SILICON | N-Channel | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 2840pF @ 25V | 95nC @ 10V | 76ns | 48 ns | 20V | 55V | 42A Tc | 220 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD70R2K0CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 700V | 42W Tc | 4A | SWITCHING | 2Ohm | SILICON | N-Channel | 2 Ω @ 1A, 10V | 3.5V @ 70μA | 163pF @ 100V | 7.8nC @ 10V | Super Junction | 4A Tc | 6.3A | 11 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC440N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Halogen Free | 29W | 9 ns | 2.7mV | 100V | 44mOhm | PG-TDSON-8-1 | 29W Tc | 18A | 150°C | 13 ns | N-Channel | 44mOhm @ 12A, 10V | 3.5V @ 12μA | 810pF @ 50V | 10.8nC @ 10V | 3ns | 20V | 100V | 5.3A Ta 18A Tc | 100V | 810pF | 6V 10V | ±20V | 44 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML6346TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 80MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 1.3W | 3.3 ns | 800mV | 1.3W Ta | 13 ns | 3.4A | 150°C | SWITCHING | 12 ns | SILICON | N-Channel | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 270pF @ 24V | 2.9nC @ 4.5V | 4ns | 4.9 ns | 12V | 30V | 800 mV | 3.4A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IRF7526D1TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1999 | FETKY™ | Obsolete | 1 (Unlimited) | EAR99 | 3.048mm | RoHS Compliant | No | 8 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 910μm | 3.048mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Other Transistors | 1 | Single | 800mW | 9.7 ns | 1.25W Ta | -2A | 19 ns | P-Channel | 200m Ω @ 1.2A, 10V | 1V @ 250μA | 180pF @ 25V | 11nC @ 10V | 12ns | 9.3 ns | 20V | -30V | Schottky Diode (Isolated) | 2A | 2A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD075N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | DRAIN | Halogen Free | Single | 47W | 30V | 47W Tc | 50A | SWITCHING | SILICON | N-Channel | 7.5m Ω @ 30A, 10V | 2.2V @ 250μA | 1900pF @ 15V | 18nC @ 10V | 3.6ns | 2.8 ns | 20V | 30V | 50A Tc | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFHM8329TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.6W | 14 ns | 1.7V | 2.6W Ta 33W Tc | 16A | SWITCHING | 14 ns | SILICON | N-Channel | 6.1m Ω @ 20A, 10V | 2.2V @ 25μA | 1710pF @ 10V | 26nC @ 10V | 74ns | 14 ns | 20V | 30V | 16A Ta 57A Tc | 230A | 43 mJ | 4.5V 10V | ±20V |