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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies $0.00
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download 10 Weeks Surface Mount Cut Tape (CT) 2002 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 4 Other Transistors 1 DRAIN Halogen Free Single 1.8W 4.7 ns -100V 1.8W Ta 680mA 67.4 ns SILICON P-Channel 1.8 Ω @ 680mA, 10V 2V @ 170μA 146pF @ 25V 6.4nC @ 10V 7.5ns 25.9 ns 20V 0.68A 680mA Ta 100V 2.72A 4.5V 10V ±20V
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download 18 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 29A 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 68W 1.6V 60V 68W Tc 29A SWITCHING SILICON N-Channel 35m Ω @ 29A, 10V 2V @ 28μA 800pF @ 30V 13nC @ 5V 20V 29A Tc 80 mJ 4.5V 10V ±20V
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download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 9.3A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 300mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 82W 7.9 ns 82W Tc 9.3A SWITCHING 27 ns SILICON N-Channel 300m Ω @ 5.4A, 10V 4V @ 250μA 575pF @ 25V 35nC @ 10V 14ns 15 ns 20V 200V 4 V 9.3A Tc 94 mJ 10V ±20V
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download 10 Weeks Surface Mount Cut Tape (CT) 2008 SIPMOS® yes Last Time Buy 3 (168 Hours) 4 EAR99 6.5mm ROHS3 Compliant Lead Free 4 AVALANCHE RATED TO-261-4, TO-261AA 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 2A e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 800V 1 DRAIN Halogen Free Single 1.8W 7 ns 800V 1.8W Ta 190mA 27 ns SILICON N-Channel 20 Ω @ 190mA, 10V 4V @ 1mA 230pF @ 25V 16ns 21 ns 20V 800V 190mA Ta 36 mJ 10V ±20V
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download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 188W 30 ns 3V 60V 188W Tc 90A SWITCHING 40 ns SILICON N-Channel 3.7m Ω @ 90A, 10V 4V @ 90μA 11000pF @ 30V 98nC @ 10V 70ns 5 ns 20V 90A Tc 10V ±20V
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download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 18MOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 160W 17 ns 4V 50 ns 160W Tc 75 ns 59A 175°C SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
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download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free 8.3A No 7 DirectFET™ Isometric MZ 506μm 5.05mm 31MOhm Surface Mount -40°C~150°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 11 ns 2.8W Ta 89W Tc 6.6A SWITCHING 24 ns SILICON N-Channel 22m Ω @ 8.2A, 10V 4.9V @ 100μA 1360pF @ 25V 31nC @ 10V 7.5ns 5.9 ns 20V 100V 8.3A Ta 47A Tc 66A 39 mJ 10V ±20V
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download 3 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ no Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 139W 13 ns 30V 2.5W Ta 139W Tc 34A SWITCHING 0.0021Ohm 51 ns SILICON N-Channel 1.4m Ω @ 30A, 10V 2.2V @ 250μA 10000pF @ 15V 131nC @ 10V 8.6ns 20V 34A Ta 100A Tc 400A 290 mJ 4.5V 10V ±20V
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download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant Lead Free No 5 DirectFET™ Isometric MT No SVHC 506μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM 260 30 R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 89W 20 ns 2.8W Ta 89W Tc 180A SWITCHING 0.0017Ohm 25 ns SILICON N-Channel 1.7m Ω @ 32A, 10V 2.35V @ 150μA 6140pF @ 15V 77nC @ 4.5V 30ns 17 ns 20V 30V 1.7 V 32A 32A Ta 180A Tc 260 mJ 4.5V 10V ±20V
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download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 84A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.826mm 9.65mm 12mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 12 ns 200W Tc 84A SWITCHING 48 ns SILICON N-Channel 12m Ω @ 50A, 10V 4V @ 250μA 3210pF @ 25V 130nC @ 10V 78ns 53 ns 20V 60V 4 V 75A 84A Tc 10V ±20V
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download 13 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.5W 14 ns 75V 2.5W Ta 125W Tc 19A SWITCHING 0.0042Ohm 34 ns SILICON N-Channel 4.2m Ω @ 50A, 10V 3.8V @ 91μA 4800pF @ 37.5V 69nC @ 10V 17ns 9 ns 20V 19A Ta 100A Tc 400A 220 mJ 10V ±20V
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download 15 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm 6.3MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 26 ns 200W Tc 120A SWITCHING 51 ns SILICON N-Channel 6.3m Ω @ 75A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 120ns 63 ns 20V 75V 75A 120A Tc 270 mJ 10V ±20V
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download 16 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ no Not For New Designs 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 LOGIC LEVEL COMPATIBLE 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 156W 100V 156W Tc 11.4A SWITCHING SILICON N-Channel 10.5m Ω @ 50A, 10V 2.4V @ 110μA 3900pF @ 50V 53nC @ 10V 26ns 20V 11.4A Ta 90A Tc 360A 377 mJ 4.5V 10V ±20V
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download 12 Weeks Surface Mount Tape & Reel (TR) 2014 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 Single 195W 32 ns 195W Tc 160A 33 ns N-Channel 1.95m Ω @ 148A, 10V 2.35V @ 150μA 8020pF @ 25V 83nC @ 4.5V 202ns 102 ns 20V 160A Tc 30V 10V ±20V
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download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 66W Tc SWITCHING 0.205Ohm 100V SILICON P-Channel 205m Ω @ 7.8A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 13A 13A Tc 100V 52A 194 mJ 10V ±20V
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download 14 Weeks Tape & Reel (TR) 2005 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.235Ohm 200V SILICON N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 13A 13A Tc 200V 52A 130 mJ 10V ±30V