Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSP316PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 4 | Other Transistors | 1 | DRAIN | Halogen Free | Single | 1.8W | 4.7 ns | -100V | 1.8W Ta | 680mA | 67.4 ns | SILICON | P-Channel | 1.8 Ω @ 680mA, 10V | 2V @ 170μA | 146pF @ 25V | 6.4nC @ 10V | 7.5ns | 25.9 ns | 20V | 0.68A | 680mA Ta | 100V | 2.72A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPD350N06LGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 29A | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Not Halogen Free | 68W | 1.6V | 60V | 68W Tc | 29A | SWITCHING | SILICON | N-Channel | 35m Ω @ 29A, 10V | 2V @ 28μA | 800pF @ 30V | 13nC @ 5V | 20V | 29A Tc | 80 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFR3410TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 3W Ta 110W Tc | SWITCHING | 0.039Ohm | 100V | SILICON | N-Channel | 39m Ω @ 18A, 10V | 4V @ 250μA | 1690pF @ 25V | 56nC @ 10V | 30A | 31A Tc | 100V | 125A | 140 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPD50R500CEAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | yes | Active | 3 (168 Hours) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 500V | 57W Tc | SWITCHING | 0.5Ohm | SILICON | N-Channel | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 433pF @ 100V | 18.7nC @ 10V | 7.6A Tc | 550V | 24A | 129 mJ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD60R950C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 37W | 10 ns | 600V | 37W Tc | 4.4A | SWITCHING | 0.95Ohm | 60 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | 8ns | 13 ns | 30V | 600V | 4.4A Tc | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRF630NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 9.3A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 300mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 82W | 7.9 ns | 82W Tc | 9.3A | SWITCHING | 27 ns | SILICON | N-Channel | 300m Ω @ 5.4A, 10V | 4V @ 250μA | 575pF @ 25V | 35nC @ 10V | 14ns | 15 ns | 20V | 200V | 4 V | 9.3A Tc | 94 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
BSP300H6327XUSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2008 | SIPMOS® | yes | Last Time Buy | 3 (168 Hours) | 4 | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | 4 | AVALANCHE RATED | TO-261-4, TO-261AA | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2A | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | 800V | 1 | DRAIN | Halogen Free | Single | 1.8W | 7 ns | 800V | 1.8W Ta | 190mA | 27 ns | SILICON | N-Channel | 20 Ω @ 190mA, 10V | 4V @ 1mA | 230pF @ 25V | 16ns | 21 ns | 20V | 800V | 190mA Ta | 36 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRF7420TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | -11.5A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 14MOhm | Surface Mount | -55°C~150°C TJ | -12V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | Other Transistors | 1 | Single | 2.5W | 8.8 ns | 2.5W Ta | 11.5mA | SWITCHING | 291 ns | SILICON | P-Channel | 14m Ω @ 11.5A, 4.5V | 900mV @ 250μA | 3529pF @ 10V | 38nC @ 4.5V | 8.8ns | 225 ns | 8V | -12V | -900 mV | 11.5A Tc | 12V | 46A | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
IRLR2908TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2003 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 120W Tc | SWITCHING | 0.028Ohm | 80V | SILICON | N-Channel | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 1890pF @ 25V | 33nC @ 4.5V | 30A | 30A Tc | 80V | 150A | 250 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
IPB037N06N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 188W | 30 ns | 3V | 60V | 188W Tc | 90A | SWITCHING | 40 ns | SILICON | N-Channel | 3.7m Ω @ 90A, 10V | 4V @ 90μA | 11000pF @ 30V | 98nC @ 10V | 70ns | 5 ns | 20V | 90A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRF1010EZSTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 140W | 19 ns | 140W Tc | 75A | 38 ns | N-Channel | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 2810pF @ 25V | 86nC @ 10V | 90ns | 54 ns | 20V | 60V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR7740TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | TO-252AA | DRAIN | Single | 10 ns | 3.7V | 140W Tc | 87A | SWITCHING | 0.0072Ohm | 75V | 55 ns | SILICON | N-Channel | 7.2m Ω @ 52A, 10V | 3.7V @ 100μA | 4430pF @ 25V | 126nC @ 10V | 36ns | 30 ns | 20V | 87A Tc | 75V | 242 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF3710ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 59A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 18MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 160W | 17 ns | 4V | 50 ns | 160W Tc | 75 ns | 59A | 175°C | SWITCHING | 41 ns | SILICON | N-Channel | 18m Ω @ 35A, 10V | 4V @ 250μA | 2900pF @ 25V | 120nC @ 10V | 77ns | 56 ns | 20V | 100V | 100V | 4 V | 59A Tc | 240A | 200 mJ | 10V | ±20V | ||||||||||||||||||||||
BSC034N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 60V | 2.5W Ta 74W Tc | 100A | SWITCHING | 0.0034Ohm | SILICON | N-Channel | 3.4m Ω @ 50A, 10V | 3.3V @ 41μA | 3000pF @ 30V | 41nC @ 10V | 5ns | 20V | 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRL3803STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 140A | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 6mOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 14 ns | 1V | 3.8W Ta 200W Tc | 180 ns | 140A | SWITCHING | 29 ns | SILICON | N-Channel | 6m Ω @ 71A, 10V | 1V @ 250μA | 5000pF @ 25V | 140nC @ 4.5V | 230ns | 35 ns | 16V | 30V | 30V | 1 V | 140A Tc | 470A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||
IRF6662TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | 8.3A | No | 7 | DirectFET™ Isometric MZ | 506μm | 5.05mm | 31MOhm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 11 ns | 2.8W Ta 89W Tc | 6.6A | SWITCHING | 24 ns | SILICON | N-Channel | 22m Ω @ 8.2A, 10V | 4.9V @ 100μA | 1360pF @ 25V | 31nC @ 10V | 7.5ns | 5.9 ns | 20V | 100V | 8.3A Ta 47A Tc | 66A | 39 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF3415STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 43A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 4.2MOhm | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 12 ns | 4V | 3.8W Ta 200W Tc | 390 ns | 43A | SWITCHING | 71 ns | SILICON | N-Channel | 42m Ω @ 22A, 10V | 4V @ 250μA | 2400pF @ 25V | 200nC @ 10V | 55ns | 69 ns | 20V | 150V | 150V | 4 V | 43A Tc | 590 mJ | 10V | ±20V | |||||||||||||||||||||||||||
BSC014N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 3 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 139W | 13 ns | 30V | 2.5W Ta 139W Tc | 34A | SWITCHING | 0.0021Ohm | 51 ns | SILICON | N-Channel | 1.4m Ω @ 30A, 10V | 2.2V @ 250μA | 10000pF @ 15V | 131nC @ 10V | 8.6ns | 20V | 34A Ta 100A Tc | 400A | 290 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRF6726MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | No | 5 | DirectFET™ Isometric MT | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 30 | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 20 ns | 2.8W Ta 89W Tc | 180A | SWITCHING | 0.0017Ohm | 25 ns | SILICON | N-Channel | 1.7m Ω @ 32A, 10V | 2.35V @ 150μA | 6140pF @ 15V | 77nC @ 4.5V | 30ns | 17 ns | 20V | 30V | 1.7 V | 32A | 32A Ta 180A Tc | 260 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRF1010ESTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 84A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.826mm | 9.65mm | 12mOhm | Surface Mount | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 12 ns | 200W Tc | 84A | SWITCHING | 48 ns | SILICON | N-Channel | 12m Ω @ 50A, 10V | 4V @ 250μA | 3210pF @ 25V | 130nC @ 10V | 78ns | 53 ns | 20V | 60V | 4 V | 75A | 84A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||
BSC042NE7NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 14 ns | 75V | 2.5W Ta 125W Tc | 19A | SWITCHING | 0.0042Ohm | 34 ns | SILICON | N-Channel | 4.2m Ω @ 50A, 10V | 3.8V @ 91μA | 4800pF @ 37.5V | 69nC @ 10V | 17ns | 9 ns | 20V | 19A Ta 100A Tc | 400A | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFS3307TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.65mm | 6.3MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 26 ns | 200W Tc | 120A | SWITCHING | 51 ns | SILICON | N-Channel | 6.3m Ω @ 75A, 10V | 4V @ 150μA | 5150pF @ 50V | 180nC @ 10V | 120ns | 63 ns | 20V | 75V | 75A | 120A Tc | 270 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
BSC105N10LSFGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 100V | 156W Tc | 11.4A | SWITCHING | SILICON | N-Channel | 10.5m Ω @ 50A, 10V | 2.4V @ 110μA | 3900pF @ 50V | 53nC @ 10V | 26ns | 20V | 11.4A Ta 90A Tc | 360A | 377 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRLS3813TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | HEXFET® | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 195W | 32 ns | 195W Tc | 160A | 33 ns | N-Channel | 1.95m Ω @ 148A, 10V | 2.35V @ 150μA | 8020pF @ 25V | 83nC @ 4.5V | 202ns | 102 ns | 20V | 160A Tc | 30V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRL520NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 10A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 180MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 4 ns | 2V | 3.8W Ta 48W Tc | 160 ns | 10A | SWITCHING | 23 ns | SILICON | N-Channel | 180m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 35ns | 22 ns | 16V | 100V | 100V | 2 V | 10A Tc | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||
IRF9530NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 1998 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 79W Tc | SWITCHING | 0.2Ohm | 100V | SILICON | P-Channel | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 14A | 14A Tc | 100V | 56A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPD90N06S405ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 20 ns | 60V | 107W Tc | 90A | 35 ns | SILICON | N-Channel | 5.1m Ω @ 90A, 10V | 4V @ 60μA | 6500pF @ 25V | 81nC @ 10V | 5ns | 8 ns | 20V | 90A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRFR5410TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 66W Tc | SWITCHING | 0.205Ohm | 100V | SILICON | P-Channel | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 13A | 13A Tc | 100V | 52A | 194 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRLR7843TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W Tc | SWITCHING | 0.0033Ohm | 30V | SILICON | N-Channel | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 4380pF @ 15V | 50nC @ 4.5V | 30A | 161A Tc | 30V | 620A | 1440 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFR13N20DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.235Ohm | 200V | SILICON | N-Channel | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 830pF @ 25V | 38nC @ 10V | 13A | 13A Tc | 200V | 52A | 130 mJ | 10V | ±30V |
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