Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPP80N06S208AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 80A | NOT SPECIFIED | NOT SPECIFIED | 55V | 1 | TO-220AB | Halogen Free | Single | 215W | 14 ns | 55V | 215W Tc | 80A | 0.008Ohm | 32 ns | SILICON | N-Channel | 8m Ω @ 58A, 10V | 4V @ 150μA | 2860pF @ 25V | 96nC @ 10V | 15ns | 14 ns | 20V | 55V | 80A Tc | 450 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S2L07ATMA3 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 210W Tc | 80A | 0.0097Ohm | SILICON | N-Channel | 6.7m Ω @ 60A, 10V | 2V @ 150μA | 3160pF @ 25V | 130nC @ 10V | 80A Tc | 320A | 450 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R385CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2007 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 83W Tc | SWITCHING | 0.385Ohm | 600V | SILICON | N-Channel | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 790pF @ 100V | 22nC @ 10V | 9A | 9A Tc | 650V | 27A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPA65R310CFDXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 32W | 11 ns | 650V | 32W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPI80N08S406AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 80V | 150W Tc | 80A | 0.0058Ohm | SILICON | N-Channel | 5.8m Ω @ 80A, 10V | 4V @ 90μA | 4800pF @ 25V | 70nC @ 10V | 80A Tc | 320A | 270 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6893MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | No | 7 | DirectFET™ Isometric MX | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 2.1W | 18 ns | 2.1W Ta 69W Tc | 29A | 19 ns | N-Channel | 1.6m Ω @ 29A, 10V | 2.1V @ 100μA | 3480pF @ 13V | 38nC @ 4.5V | 83ns | 33 ns | 16V | 25V | 29A Ta 168A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFSL3206PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 210A | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W | 19 ns | 300W Tc | 120A | SWITCHING | 55 ns | SILICON | N-Channel | 3m Ω @ 75A, 10V | 4V @ 150μA | 6540pF @ 50V | 170nC @ 10V | 82ns | 83 ns | 20V | 60V | 120A Tc | 840A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPL60R299CPAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | CoolMOS™ | no | Not For New Designs | 2A (4 Weeks) | 4 | ROHS3 Compliant | Contains Lead | 4 | 4-PowerTSFN | No SVHC | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 3V | 600V | 96W Tc | 11.1A | SWITCHING | 0.299Ohm | 40 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1100pF @ 100V | 22nC @ 10V | 5ns | 20V | 11.1A Tc | 650V | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPB65R310CFDAATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Automotive, AEC-Q101, CoolMOS™ | no | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | 3 | HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 11 ns | 650V | 104.2W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 1110pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRF1404STRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 162A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 4mOhm | Surface Mount | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 17 ns | 3.8W Ta 200W Tc | 162A | SWITCHING | 72 ns | SILICON | N-Channel | 4m Ω @ 95A, 10V | 4V @ 250μA | 7360pF @ 25V | 200nC @ 10V | 140ns | 26 ns | 20V | 40V | 75A | 162A Tc | 650A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF40H210 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerVDFN | 1.7mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 125W Tc | 100A | N-Channel | 1.7m Ω @ 100A, 10V | 3.7V @ 150μA | 5406pF @ 25V | 152nC @ 10V | 100A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6611TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.35mm | RoHS Compliant | Lead Free | 32A | No | 5 | DirectFET™ Isometric MX | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | 260 | 40 | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 18 ns | 3.9W Ta 89W Tc | 22A | SWITCHING | 0.0026Ohm | 24 ns | SILICON | N-Channel | 2.6m Ω @ 27A, 10V | 2.25V @ 250μA | 4860pF @ 15V | 56nC @ 4.5V | 57ns | 6.5 ns | 20V | 30V | 32A Ta 150A Tc | 220A | 310 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF6613TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 6.35mm | RoHS Compliant | Lead Free | 23A | No | 5 | DirectFET™ Isometric MT | No SVHC | 506μm | 5.05mm | 3.4MOhm | Surface Mount | -40°C~150°C TJ | 40V | MOSFET (Metal Oxide) | 1 | 89W | 18 ns | 1.35V | 4.1mOhm | DIRECTFET™ MT | 2.8W Ta 89W Tc | 57 ns | 18A | 27 ns | N-Channel | 3.4mOhm @ 23A, 10V | 2.25V @ 250μA | 5950pF @ 15V | 63nC @ 4.5V | 47ns | 4.9 ns | 20V | 40V | 40V | 1.35 V | 23A Ta 150A Tc | 40V | 5.95nF | 4.5V 10V | ±20V | 3.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||
IRF6631TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 4.826mm | RoHS Compliant | Lead Free | 13A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric SQ | No SVHC | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 15 ns | 1.8V | 2.2W Ta 42W Tc | 10A | SWITCHING | 0.0078Ohm | 18 ns | SILICON | N-Channel | 7.8m Ω @ 13A, 10V | 2.35V @ 25μA | 1450pF @ 15V | 18nC @ 4.5V | 18ns | 4.9 ns | 20V | 30V | 1.8 V | 13A Ta 57A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF6629TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | RoHS Compliant | Lead Free | 29A | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | 2.1MOhm | Surface Mount | -40°C~150°C TJ | 25V | MOSFET (Metal Oxide) | 100W | 20 ns | 1.8V | 2.7mOhm | DIRECTFET™ MX | 2.8W Ta 100W Tc | 23A | 20 ns | N-Channel | 2.1mOhm @ 29A, 10V | 2.35V @ 100μA | 4260pF @ 13V | 51nC @ 4.5V | 67ns | 7.4 ns | 20V | 25V | 25V | 1.8 V | 29A Ta 180A Tc | 25V | 4.26nF | 4.5V 10V | ±20V | 2.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
IRF6655TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 4.826mm | ROHS3 Compliant | Lead Free | 4.2A | No | 5 | DirectFET™ Isometric SH | 508μm | 3.9624mm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 7.4 ns | 2.2W Ta 42W Tc | 4.2mA | SWITCHING | 0.062Ohm | 14 ns | SILICON | N-Channel | 62m Ω @ 5A, 10V | 4.8V @ 25μA | 530pF @ 25V | 11.7nC @ 10V | 2.8ns | 4.3 ns | 20V | 100V | 4.2A Ta 19A Tc | 34A | 11 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF6645TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 4.826mm | RoHS Compliant | Lead Free | Copper, Silver, Tin | 5.7A | No | 5 | DirectFET™ Isometric SJ | No SVHC | 530μm | 3.95mm | 35MOhm | Surface Mount | -40°C~150°C TJ | 100V | MOSFET (Metal Oxide) | 1 | Single | 42W | 9.2 ns | 3V | 28mOhm | DIRECTFET™ SJ | 2.2W Ta 42W Tc | 47 ns | 4.5A | 18 ns | N-Channel | 35mOhm @ 5.7A, 10V | 4.9V @ 50μA | 890pF @ 25V | 20nC @ 10V | 5ns | 5.1 ns | 20V | 100V | 100V | 3 V | 5.7A Ta 25A Tc | 100V | 890pF | 10V | ±20V | 35 mΩ | ||||||||||||||||||||||||||||||||||||||||
IRF6646TR1PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | 6.35mm | RoHS Compliant | Lead Free | 12A | No | 5 | DirectFET™ Isometric MN | No SVHC | 506μm | 5.05mm | 9.5MOhm | Surface Mount | -40°C~150°C TJ | 80V | MOSFET (Metal Oxide) | 1 | Single | 89W | 17 ns | 3V | 7.6mOhm | DIRECTFET™ MN | 2.8W Ta 89W Tc | 54 ns | 9.6A | 31 ns | N-Channel | 9.5mOhm @ 12A, 10V | 4.9V @ 150μA | 2060pF @ 25V | 50nC @ 10V | 20ns | 12 ns | 20V | 80V | 80V | 3 V | 12A Ta 68A Tc | 80V | 2.06nF | 10V | ±20V | 9.5 mΩ | |||||||||||||||||||||||||||||||||||||||||
BTS244Z E3062A | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1999 | TEMPFET® | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | AVALANCHE RATED | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | compliant | Surface Mount | -40°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | 170W Tc | SWITCHING | 0.018Ohm | 55V | SILICON | N-Channel | 13m Ω @ 19A, 10V | 2V @ 130μA | 2660pF @ 25V | 130nC @ 10V | Temperature Sensing Diode | 35A | 35A Tc | 55V | 188A | 1650 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BUZ73A | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2000 | SIPMOS® | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | RoHS Compliant | Lead Free | 5.5A | 3 | TO-220-3 | No SVHC | 2.54mm | Through Hole | -55°C~150°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 40W | 40W Tc | 5.5A | SWITCHING | 0.6Ohm | 55 ns | SILICON | N-Channel | 600m Ω @ 4.5A, 10V | 4V @ 1mA | 530pF @ 25V | 40ns | 30 ns | 20V | 200V | 200V | 3 V | 5.8A | 5.5A Tc | 22A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFP4232PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | Through Hole | 175°C | -40°C | 15.87mm | RoHS Compliant | Lead Free | 60A | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 35.7MOhm | Through Hole | -40°C~175°C TJ | 250V | MOSFET (Metal Oxide) | 1 | Single | 430W | 37 ns | 5V | 35.7mOhm | TO-247AC | 430W Tc | 60A | 64 ns | N-Channel | 35.7mOhm @ 42A, 10V | 5V @ 250μA | 7290pF @ 25V | 240nC @ 10V | 30V | 250V | 250V | 5 V | 60A Tc | 250V | 7.29nF | 10V | ±20V | 35.7 mΩ | ||||||||||||||||||||||||||||||||||||||||||||
IRFS4610PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | 10.668mm | RoHS Compliant | Lead Free | 73A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 14mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | DRAIN | Single | 190W | 18 ns | 190W Tc | 53 ns | 73A | SWITCHING | 53 ns | SILICON | N-Channel | 14m Ω @ 44A, 10V | 4V @ 100μA | 3550pF @ 50V | 140nC @ 10V | 87ns | 70 ns | 20V | 100V | 100V | 4 V | 73A Tc | 290A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF7495PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.022Ohm | 100V | SILICON | N-Channel | 22m Ω @ 4.4A, 10V | 4V @ 250μA | 1530pF @ 25V | 51nC @ 10V | 7.3A | 7.3A Ta | 100V | 58A | 180 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 7.5mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 18 ns | 4V | 140W Tc | 33 ns | 75A | SWITCHING | 36 ns | SILICON | N-Channel | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 2840pF @ 25V | 95nC @ 10V | 150ns | 92 ns | 20V | 55V | 55V | 4 V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRF3704ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.67mm | RoHS Compliant | Lead Free | 67A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 7.9MOhm | Surface Mount | -55°C~175°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 57W | 8.9 ns | 57W Tc | 17 ns | 67A | SWITCHING | 11 ns | SILICON | N-Channel | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 1220pF @ 10V | 13nC @ 4.5V | 38ns | 4.2 ns | 20V | 20V | 2.1 V | 42A | 67A Tc | 260A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRLS3036-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.572mm | 9.65mm | 1.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 380W | 81 ns | 2.5V | 380W Tc | 300A | 89 ns | N-Channel | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 11270pF @ 50V | 160nC @ 4.5V | 540ns | 170 ns | 16V | 60V | 240A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR316PL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | SIPMOS® | yes | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 500mW | 500mW Ta | 360mA | SILICON | P-Channel | 1.8 Ω @ 360mA, 10V | 1V @ 170μA | 165pF @ 25V | 7nC @ 10V | 6ns | 20V | 360mA Ta | 100V | 20 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R250CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 33W | 40 ns | 600V | 33W Tc | 12A | SWITCHING | 0.25Ohm | 110 ns | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 1300pF @ 100V | 35nC @ 10V | 17ns | 12 ns | 20V | 12A Tc | 650V | 40A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPB160N04S203ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 0.0029Ohm | 40V | SILICON | N-Channel | 2.9m Ω @ 60A, 10V | 4V @ 250μA | 5300pF @ 25V | 170nC @ 10V | 160A | 160A Tc | 40V | 640A | 810 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA50R299CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 104W | 35 ns | 500V | 104W Tc | 12A | SWITCHING | 0.299Ohm | 80 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 14ns | 12 ns | 20V | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V |
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