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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFS4227PBF IRFS4227PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 330W 33 ns 5V 330W Tc 150 ns 62A SWITCHING 0.026Ohm 21 ns SILICON N-Channel 26m Ω @ 46A, 10V 5V @ 250μA 4600pF @ 25V 98nC @ 10V 20ns 31 ns 30V 200V 240V 5 V 62A Tc 260A 10V ±30V
    IPP16CN10LGXKSA1 IPP16CN10LGXKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant LOGIC LEVEL COMPATIBLE TO-220-3 unknown Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 100W 100W Tc 54A SWITCHING SILICON N-Channel 15.7m Ω @ 54A, 10V 2.4V @ 61μA 4190pF @ 50V 44nC @ 10V 20V 54A Tc 100V 10V ±20V
    IPP80N04S306AKSA1 IPP80N04S306AKSA1 Infineon Technologies $0.00
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    		 download Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant ULTRA LOW RESISTANCE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 100W Tc 0.0057Ohm 40V SILICON N-Channel 5.7m Ω @ 80A, 10V 4V @ 52μA 3250pF @ 25V 47nC @ 10V 80A 80A Tc 40V 320A 125 mJ 10V ±20V
    IPP100N04S2L03AKSA1 IPP100N04S2L03AKSA1 Infineon Technologies $0.00
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    		 download Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 10.36mm RoHS Compliant 3 AVALANCHE RATED TO-220-3 15.95mm 4.57mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED NO 1 TO-220AB Halogen Free Single 300W 19 ns 40V 300W Tc 100A 77 ns SILICON N-Channel 3.3m Ω @ 80A, 10V 2V @ 250μA 6000pF @ 25V 230nC @ 10V 51ns 27 ns 20V 40V 100A Tc 400A 810 mJ 4.5V 10V ±20V
    IPP80N04S2L03AKSA1 IPP80N04S2L03AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 19 ns 40V 300W Tc 80A 77 ns SILICON N-Channel 3.4m Ω @ 80A, 10V 2V @ 250μA 6000pF @ 25V 213nC @ 10V 50ns 27 ns 20V 80A Tc 4.5V 10V ±20V
    SPD30N03S2L10GBTMA1 SPD30N03S2L10GBTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2002 OptiMOS™ Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W 6.1 ns 100W Tc 30A 30V 27 ns SILICON N-Channel 10m Ω @ 30A, 10V 2V @ 50μA 1550pF @ 25V 41.8nC @ 10V 13ns 17 ns 20V 30A Tc 30V 4.5V 10V ±20V
    IPP80N06S2L-07 IPP80N06S2L-07 Infineon Technologies $0.00
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    		 download Tube 2003 OptiMOS™ yes Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 210W Tc 0.01Ohm 55V SILICON N-Channel 7m Ω @ 60A, 10V 2V @ 150μA 3160pF @ 25V 130nC @ 10V 80A 80A Tc 55V 320A 450 mJ 4.5V 10V ±20V
    IPP100N06S205AKSA1 IPP100N06S205AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2006 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB 300W 21 ns 300W Tc 100A 0.005Ohm 55V SILICON N-Channel 5m Ω @ 80A, 10V 4V @ 250μA 5110pF @ 25V 170nC @ 10V 31ns 20V 100A Tc 55V 400A 10V ±20V
    SPI15N65C3XKSA1 SPI15N65C3XKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2008 CoolMOS™ Obsolete 1 (Unlimited) 150°C -55°C 10.2mm RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.45mm 4.5mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free Single 156W 32 ns 650V 280mOhm PG-TO262-3-1 156W Tc 15A 70 ns N-Channel 280mOhm @ 9.4A, 10V 3.9V @ 675μA 1600pF @ 25V 63nC @ 10V 14ns 11 ns 20V 650V 3 V 15A Tc 650V 1.6nF 10V ±20V 280 mΩ
    IPW90R1K0C3FKSA1 IPW90R1K0C3FKSA1 Infineon Technologies $0.00
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    		 download 6 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 89W 70 ns 900V 89W Tc 5.7A SWITCHING 1Ohm 400 ns SILICON N-Channel 1 Ω @ 3.3A, 10V 3.5V @ 370μA 850pF @ 100V 34nC @ 10V 20ns 35 ns 20V 5.7A Tc 12A 97 mJ 10V ±20V
    IPW50R299CPFKSA1 IPW50R299CPFKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 104W Tc SWITCHING 0.299Ohm 500V SILICON N-Channel 299m Ω @ 6.6A, 10V 3.5V @ 440μA 1190pF @ 100V 31nC @ 10V 12A 12A Tc 550V 26A 289 mJ 10V ±20V
    IRF540ZSTRRPBF IRF540ZSTRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 92W Tc SWITCHING 0.0265Ohm 100V SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 36A 36A Tc 100V 140A 120 mJ 10V ±20V
    IPP80N06S2L06AKSA1 IPP80N06S2L06AKSA1 Infineon Technologies $0.00
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    		 download Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 10mm RoHS Compliant 3 LOGIC LEVEL COMPATIBLE TO-220-3 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED NO 1 TO-220AB Halogen Free Single 250W 11 ns 55V 250W Tc 80A 0.0081Ohm 60 ns SILICON N-Channel 6.3m Ω @ 69A, 10V 2V @ 180μA 3800pF @ 25V 150nC @ 10V 21ns 20 ns 20V 55V 80A Tc 4.5V 10V ±20V
    IPP47N10SL26AKSA1 IPP47N10SL26AKSA1 Infineon Technologies $0.00
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    		 download Tube 2001 SIPMOS® Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 175W Tc 0.04Ohm 100V SILICON N-Channel 26m Ω @ 33A, 10V 2V @ 2mA 2500pF @ 25V 135nC @ 10V 47A 47A Tc 100V 188A 400 mJ 4.5V 10V ±20V
    IPW50R350CPFKSA1 IPW50R350CPFKSA1 Infineon Technologies $0.00
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    		 download 8 Weeks Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant TO-247-3 compliant Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-247AD 89W Tc SWITCHING 0.35Ohm 500V SILICON N-Channel 350m Ω @ 5.6A, 10V 3.5V @ 370μA 1020pF @ 100V 25nC @ 10V 10A 10A Tc 550V 22A 246 mJ 10V ±20V
    IPS50R520CP IPS50R520CP Infineon Technologies $0.00
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    		 download Through Hole Tube 2007 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant 3 TO-251-3 Stub Leads, IPak Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 Single 66W 35 ns 500V 66W Tc 7.1A 0.52Ohm 80 ns SILICON N-Channel 520m Ω @ 3.8A, 10V 3.5V @ 250μA 680pF @ 100V 17nC @ 10V 14ns 17 ns 20V 500V 3 V 7.1A Tc 550V 10V ±20V
    SPS01N60C3 SPS01N60C3 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole EAR99 RoHS Compliant Lead Free 3 AVALANCHE RATED TO-251-3 Stub Leads, IPak Unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 TO-251AA Single 11W 30 ns 11W Tc 800mA 6Ohm 55 ns SILICON N-Channel 6 Ω @ 500mA, 10V 3.9V @ 250μA 100pF @ 25V 5nC @ 10V 25ns 30 ns 30V 650V 650V 3 V 0.8A 800mA Tc 1.6A 20 mJ 10V ±20V
    IRFS4115-7PPBF IRFS4115-7PPBF Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 6 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 11.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 380W 18 ns 5V 380W Tc 105A SWITCHING 37 ns SILICON N-Channel 11.8m Ω @ 63A, 10V 5V @ 250μA 5320pF @ 50V 110nC @ 10V 50ns 23 ns 20V 150V 150V 5 V 105A Tc 420A 230 mJ 10V ±20V
    IRFH3702TR2PBF IRFH3702TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2010 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 2.9972mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 939.8μm 2.9972mm 7.1MOhm Surface Mount MOSFET (Metal Oxide) 2.8W 1 Single 2.8W 9.6 ns 7.1mOhm 8-PQFN (3x3) 26 ns 16A 11 ns N-Channel 7.1mOhm @ 16A, 10V 2.35V @ 25μA 1510pF @ 15V 14nC @ 4.5V 15ns 5.8 ns 20V 30V 1.8 V 16A Ta 42A Tc 30V 1.51nF 7.1 mΩ
    IRFSL4115PBF IRFSL4115PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2011 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.65mm 4.826mm 12.1MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 375W 18 ns 375W Tc 99A SWITCHING 41 ns SILICON N-Channel 12.1m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 73ns 39 ns 20V 150V 195A Tc 10V ±20V
    IRFS4020PBF IRFS4020PBF Infineon Technologies $0.00
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    		 download Surface Mount, Through Hole Tube 2007 Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 4.826mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 100W 7.8 ns 4.9V 100W Tc 120 ns 18A SWITCHING 0.105Ohm 16 ns SILICON N-Channel 105m Ω @ 11A, 10V 4.9V @ 100μA 1200pF @ 50V 29nC @ 10V 12ns 6.3 ns 20V 200V 200V 4.9 V 18A Tc 52A 94 mJ 10V ±20V
    IRLS3036PBF IRLS3036PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 2.4MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 380W 66 ns 2.5V 380W Tc 270A SWITCHING 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 110 ns 16V 60V 60V 2.5 V 195A Tc 290 mJ 4.5V 10V ±16V
    IRFH7932TR2PBF IRFH7932TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2008 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 939.8μm 5.1054mm 3.3MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Single 3.1W 20 ns 1.8V 3.3mOhm PQFN (5x6) Single Die 3.4W Ta 32 ns 24A 23 ns N-Channel 3.3mOhm @ 25A, 10V 2.35V @ 100μA 4270pF @ 15V 51nC @ 4.5V 48ns 20 ns 20V 30V 1.8 V 24A Ta 104A Tc 30V 4.27nF 3.3 mΩ
    IRFU4104PBF IRFU4104PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) Through Hole 6.7056mm RoHS Compliant Lead Free 119A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) 9.65mm Single 140W 17 ns 4V 140W Tc 42 ns 119A 37 ns N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 69ns 36 ns 20V 40V 40V 4 V 42A Tc 10V ±20V
    IRFU3711ZPBF IRFU3711ZPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 93A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 DRAIN Single 79W 12 ns 2V 79W Tc 28 ns 93A SWITCHING 0.0057Ohm 15 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.45V @ 250μA 2160pF @ 10V 27nC @ 4.5V 13ns 5.2 ns 20V 20V 2 V 93A Tc 140 mJ 4.5V 10V ±20V
    IRFR48ZPBF IRFR48ZPBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.3886mm ROHS3 Compliant Lead Free 62A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.73mm 11MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 91W 15 ns 4V 91W Tc 40 ns 42A 40 ns N-Channel 11m Ω @ 37A, 10V 4V @ 50μA 1720pF @ 25V 60nC @ 10V 61ns 35 ns 20V 55V 55V 4 V 42A Tc 10V ±20V
    IRLU3802PBF IRLU3802PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 84A No 3 TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 12V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 88W 11 ns 88W Tc 84A SWITCHING 21 ns SILICON N-Channel 8.5m Ω @ 15A, 4.5V 1.9V @ 250μA 2490pF @ 6V 41nC @ 5V 14ns 17 ns 12V 12V 84A Tc 2.8V 4.5V ±12V
    IRFR3411PBF IRFR3411PBF Infineon Technologies $0.00
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    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 130W Tc SWITCHING 0.044Ohm 100V SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 32A 32A Tc 100V 110A 185 mJ 10V ±20V
    IRLR9343PBF IRLR9343PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free -20A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 105MOhm Surface Mount -40°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 79W 9.5 ns -1V 79W Tc 20A AMPLIFIER 21 ns SILICON P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 660pF @ 50V 47nC @ 10V 24ns 9.5 ns 20V -55V 20A Tc 55V 60A 4.5V 10V ±20V
    IRFR15N20DPBF IRFR15N20DPBF Infineon Technologies $0.00
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    		 Tube 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 3W Ta 140W Tc SWITCHING 0.165Ohm 200V SILICON N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 17A 17A Tc 200V 68A 260 mJ 10V ±30V