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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFR24N15DPBF IRFR24N15DPBF Infineon Technologies $0.00
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    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 140W Tc N-Channel 95m Ω @ 14A, 10V 5V @ 250μA 890pF @ 25V 45nC @ 10V 24A Tc 150V 10V ±30V
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    		 download 14 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 3.3MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 1.3V Single 200W 17 ns 200W Tc 75A 59 ns N-Channel 3.3m Ω @ 140A, 10V 4V @ 250μA 5730pF @ 25V 200nC @ 10V 130ns 48 ns 20V 30V 4 V 75A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330W 17 ns 4V 330W Tc 75A SWITCHING 59 ns SILICON N-Channel 3.3m Ω @ 140A, 10V 4V @ 250μA 5730pF @ 25V 200nC @ 10V 130ns 48 ns 20V 30V 4 V 75A Tc 960A 980 mJ 10V ±20V
    IRF3710ZSPBF IRF3710ZSPBF Infineon Technologies $0.00
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 160W Tc SWITCHING 0.018Ohm 100V SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 59A 59A Tc 100V 240A 200 mJ 10V ±20V
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    		 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.02Ohm 30V SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 8A 8A Tc 30V 50A 4.5V 10V ±20V
    IRLML2502TR IRLML2502TR Infineon Technologies $0.00
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    		 download Cut Tape (CT) 2003 HEXFET® Discontinued 1 (Unlimited) 3 EAR99 Non-RoHS Compliant HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-236AB 1.25W SWITCHING 0.045Ohm 20V SILICON N-Channel 45m Ω @ 4.2A, 4.5V 1.2V @ 250μA 740pF @ 15V 12nC @ 5V 4.2A 4.2A Ta 20V 33A
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    		 download Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 135A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.652mm 4.7mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 200W 14 ns 4V 200W Tc 135A 68 ns N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 55V 4 V 135A Tc 10V ±20V
    IPS090N03LGAKMA1 IPS090N03LGAKMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 42W 42W Tc 40A SWITCHING SILICON N-Channel 9m Ω @ 30A, 10V 2.2V @ 250μA 1600pF @ 15V 15nC @ 10V 40A Tc 30V 280A 70 mJ 4.5V 10V ±20V
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    		 download Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 38W Tc SWITCHING 0.0114Ohm 30V SILICON N-Channel 11.4m Ω @ 30A, 10V 2.2V @ 250μA 1500pF @ 15V 14nC @ 10V 30A 30A Tc 30V 210A 30 mJ 4.5V 10V ±20V
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    		 download 15 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.652mm 4.826mm 2.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 380W 66 ns 380W Tc 195A SWITCHING 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 110 ns 16V 60V 270A 195A Tc 290 mJ 4.5V 10V ±16V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 1.778mm 6.22mm 42MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 144W 15 ns 5V 144W Tc 33A 25 ns N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 26nC @ 10V 35ns 20 ns 20V 150V 150V 5 V 33A Tc 10V ±20V
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 16 ns 4V 375W Tc 270A SWITCHING 0.0025Ohm 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A Tc 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) SMD/SMT EAR99 5.2324mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 1.1684mm 6.2484mm 8.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 3.1W 12 ns 3.1W Ta 15mA 14 ns N-Channel 8.5m Ω @ 15A, 10V 2.35V @ 25μA 1210pF @ 15V 14nC @ 4.5V 7.6ns 4.7 ns 20V 30V 30V 1.8 V 34A 15A Ta 34A Tc 4.5V 10V ±20V
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 6 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.55mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 380W 19 ns 4V 60 ns 380W Tc 190A SWITCHING 0.004Ohm 100 ns SILICON N-Channel 4m Ω @ 110A, 10V 4V @ 250μA 9830pF @ 50V 230nC @ 10V 56ns 48 ns 20V 100V 100V 4 V 190A Tc 330 mJ 10V ±20V
    IRFR9024NTRRPBF IRFR9024NTRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W 13 ns 38W Tc -11A SWITCHING 23 ns SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 55ns 37 ns 20V -55V 11A Tc 55V 44A 62 mJ 10V ±20V
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    		 download Tape & Reel (TR) 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.0145Ohm 55V SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 42A 42A Tc 55V 240A 82 mJ 10V ±20V
    IRFU1018EPBF IRFU1018EPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 8.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 56A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A 56A Tc 88 mJ 10V ±20V
    IRFP4410ZPBF IRFP4410ZPBF Infineon Technologies $0.00
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    		 download 10 Weeks Through Hole Bulk 2004 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 230W 16 ns 4V 230W Tc 57 ns 97A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A Tc 242 mJ 10V ±20V
    IRFS4229PBF IRFS4229PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 330W 18 ns 5V 330W Tc 290 ns 45A 30 ns N-Channel 48m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 30V 250V 250V 5 V 45A Tc 10V ±30V
    IRFB4233PBF IRFB4233PBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm RoHS Compliant No 3 TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 31 ns 5V 37mOhm TO-220AB 370W Tc 56A 51 ns N-Channel 37mOhm @ 28A, 10V 5V @ 250μA 5510pF @ 25V 170nC @ 10V 30V 230V 276V 5 V 56A Tc 230V 5.51nF 10V ±30V 37 mΩ
    IRFS3207PBF IRFS3207PBF Infineon Technologies $0.00
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    		 download Tube 2006 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.0045Ohm 75V SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7600pF @ 50V 260nC @ 10V 75A 170A Tc 75V 720A 910 mJ 10V ±20V
    IRFS3607PBF IRFS3607PBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 140W 16 ns 4V 140W Tc 50 ns 80A 43 ns N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V
    SPD01N60C3BTMA1 SPD01N60C3BTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Contains Lead AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 260 40 3 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 11W 30 ns 600V 11W Tc 800mA 6Ohm 55 ns SILICON N-Channel 6 Ω @ 500mA, 10V 3.9V @ 250μA 100pF @ 25V 5nC @ 10V 25ns 20V 0.8A 800mA Tc 650V 20 mJ 10V ±20V
    IRF1324S-7PPBF IRF1324S-7PPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2006 HEXFET® Obsolete 1 (Unlimited) 6 SMD/SMT EAR99 10.795mm RoHS Compliant Lead Free Tin 429A No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.5466mm 8.15mm Surface Mount -55°C~175°C TJ 24V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 300W 19 ns 4V 300W Tc 107 ns 429A SWITCHING 86 ns SILICON N-Channel 1m Ω @ 160A, 10V 4V @ 250μA 7700pF @ 19V 252nC @ 10V 240ns 93 ns 20V 24V 24V 4 V 240A 240A Tc 230 mJ 10V ±20V
    IRF8721GTRPBF IRF8721GTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 8.2 ns 2.5W Ta 14A SWITCHING 8.1 ns SILICON N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 14A Ta 4.5V 10V ±20V
    IRFH5302TR2PBF IRFH5302TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2009 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 810μm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.6W 1 Single 100W 18 ns 1.8V 2.1mOhm PQFN (5x6) Single Die 29 ns 100A 22 ns N-Channel 2.1mOhm @ 50A, 10V 2.35V @ 100μA 4400pF @ 15V 76nC @ 10V 51ns 18 ns 20V 30V 1.8 V 32A Ta 100A Tc 30V 4.4nF 2.1 mΩ
    IRLR3717TRPBF IRLR3717TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 89W Tc SWITCHING 0.004Ohm 20V SILICON N-Channel 4m Ω @ 15A, 10V 2.45V @ 250μA 2830pF @ 10V 31nC @ 4.5V 30A 120A Tc 20V 460A 460 mJ 4.5V 10V ±20V
    BSZ076N06NS3GATMA1 BSZ076N06NS3GATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 15 ns 60V 2.1W Ta 69W Tc 20A SWITCHING 0.0076Ohm 20 ns SILICON N-Channel 7.6m Ω @ 20A, 10V 4V @ 35μA 4000pF @ 30V 50nC @ 10V 40ns 5 ns 20V 20A Tc 10V ±20V
    IRFS4410PBF IRFS4410PBF Infineon Technologies $0.00
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    		 download Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 200W Tc N-Channel 10m Ω @ 58A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 88A Tc 100V 10V ±20V
    IRF7240PBF IRF7240PBF Infineon Technologies $0.00
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    		 download 26 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.015Ohm 40V SILICON P-Channel 15m Ω @ 10.5A, 10V 3V @ 250μA 9250pF @ 25V 110nC @ 10V 10.5A 10.5A Ta 40V 43A 4.5V 10V ±20V