Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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SPU03N60C3BKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2003 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 38W Tc | SWITCHING | 600V | SILICON | N-Channel | 1.4 Ω @ 2A, 10V | 3.9V @ 135μA | 400pF @ 25V | 17nC @ 10V | 3.2A | 3.2A Tc | 650V | 9.6A | 100 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFR2307ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | 42A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 16MOhm | Surface Mount | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 16 ns | 4V | 110W Tc | 47 ns | 42A | SWITCHING | 44 ns | SILICON | N-Channel | 16m Ω @ 32A, 10V | 4V @ 100μA | 2190pF @ 25V | 75nC @ 10V | 65ns | 29 ns | 20V | 75V | 75V | 4 V | 42A Tc | 10V | ±20V | |||||||||||||||||||||||||||
IPB80N06S4L07ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 10mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 10 ns | 60V | 79W Tc | 80A | 0.0064Ohm | 50 ns | SILICON | N-Channel | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 5680pF @ 25V | 75nC @ 10V | 3ns | 8 ns | 16V | 60V | 80A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
IPD65R600C6BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 12 ns | 650V | 63W Tc | 7.3A | SWITCHING | 0.6Ohm | 80 ns | SILICON | N-Channel | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | 9ns | 13 ns | 20V | 7.3A Tc | 18A | 142 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFH7787TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 6.15mm | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | 1.17mm | 5.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 7.3 ns | 83W Tc | 68A | 53 ns | N-Channel | 8m Ω @ 41A, 10V | 3.7V @ 100μA | 4030pF @ 25V | 110nC @ 10V | 16ns | 12 ns | 20V | 68A Tc | 75V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ46ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 51A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 13.6MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 82W | 13 ns | 4V | 82W Tc | 51A | SWITCHING | 37 ns | SILICON | N-Channel | 13.6m Ω @ 31A, 10V | 4V @ 250μA | 1460pF @ 25V | 46nC @ 10V | 63ns | 39 ns | 20V | 55V | 55V | 4 V | 51A Tc | 200A | 97 mJ | 10V | ±20V | ||||||||||||||||||||||||||||
IPB120P04P404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30 ns | -40V | 136W Tc | 120A | 49 ns | SILICON | P-Channel | 3.5m Ω @ 100A, 10V | 4V @ 340μA | 14790pF @ 25V | 205nC @ 10V | 20ns | 52 ns | 20V | 120A Tc | 40V | 480A | 78 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRF7732S2TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 7 | DirectFET™ Isometric SC | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 41W | 4V | 2.5W Ta 41W Tc | 14A | SWITCHING | 0.00695Ohm | SILICON | N-Channel | 6.95m Ω @ 33A, 10V | 4V @ 50μA | 1700pF @ 25V | 45nC @ 10V | 123ns | 37 ns | 16V | 40V | 55A | 14A Ta | 220A | 45 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFI7446GPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
17 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 40.5W Tc | 80A | N-Channel | 3.3m Ω @ 48A, 10V | 3.9V @ 100μA | 3199pF @ 25V | 90nC @ 10V | 80A Tc | 40V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50N06S2L13ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2002 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55V | 136W Tc | 50A | 0.0167Ohm | SILICON | N-Channel | 12.7m Ω @ 34A, 10V | 2V @ 80μA | 1800pF @ 25V | 69nC @ 10V | 50A Tc | 200A | 240 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSZ096N10LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | -55°C | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | SWITCHING | 0.0096Ohm | 100V | METAL-OXIDE SEMICONDUCTOR | SILICON | 11A | 160A | 82 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD65R660CFDBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W | 9 ns | 650V | 62.5W Tc | 6A | SWITCHING | 0.66Ohm | 40 ns | SILICON | N-Channel | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 615pF @ 100V | 22nC @ 10V | 8ns | 10 ns | 20V | 6A | 6A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPD85P04P407ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 88W | 24 ns | -40V | 88W Tc | 85A | 0.0073Ohm | 34 ns | SILICON | P-Channel | 7.3m Ω @ 85A, 10V | 4V @ 150μA | 6085pF @ 25V | 89nC @ 10V | 15ns | 39 ns | 20V | 85A Tc | 40V | 340A | 30 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPB80N06S4L05ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 107W | 14 ns | 60V | 107W Tc | 80A | 0.0048Ohm | 80 ns | SILICON | N-Channel | 5.1m Ω @ 80A, 10V | 2.2V @ 60μA | 8180pF @ 25V | 110nC @ 10V | 4ns | 13 ns | 16V | 60V | 80A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
IRFI7440GPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 42W Tc | 95A | SWITCHING | 0.0025Ohm | 40V | SILICON | N-Channel | 2.5m Ω @ 57A, 10V | 3.9V @ 100μA | 4549pF @ 25V | 132nC @ 10V | 95A Tc | 40V | 380A | 407 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPD90N06S407ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 15 ns | 60V | 79W Tc | 90A | 0.0069Ohm | 23 ns | SILICON | N-Channel | 6.9m Ω @ 90A, 10V | 4V @ 40μA | 56nC @ 10V | 3ns | 5 ns | 20V | 90A Tc | 67 mJ | 4.5nF | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPB35N10S3L26ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | 71W Tc | 0.0322Ohm | 100V | SILICON | N-Channel | 26.3m Ω @ 35A, 10V | 2.4V @ 39μA | 2700pF @ 25V | 39nC @ 10V | 35A | 35A Tc | 100V | 140A | 175 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRF7483MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | DirectFET™ Isometric MF | 2.3mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 74W Tc | 135A | N-Channel | 2.3m Ω @ 81A, 10V | 3.9V @ 100μA | 3913pF @ 25V | 81nC @ 10V | 135A Tc | 40V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU7540PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 4Ohm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 140W Tc | 90A | N-Channel | 4.8m Ω @ 66A, 10V | 3.7V @ 100μA | 4360pF @ 25V | 130nC @ 10V | 90A Tc | 60V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU4510PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2012 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.39mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | DRAIN | Single | 143W | 18 ns | 143W Tc | 56A | SWITCHING | 42 ns | SILICON | N-Channel | 13.9m Ω @ 38A, 10V | 4V @ 100μA | 3031pF @ 50V | 81nC @ 10V | 34 ns | 20V | 100V | 3 V | 56A Tc | 252A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AUIRFR024N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 45W | 4.9 ns | 2V | 45W Tc | 17A | SWITCHING | 0.075Ohm | 19 ns | SILICON | N-Channel | 75m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | 27 ns | 20V | 55V | 17A Tc | 68A | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFSL7440PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 2.5MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 208W | 24 ns | 3V | 208W Tc | 120A | SWITCHING | 115 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 4730pF @ 25V | 135nC @ 10V | 68ns | 68 ns | 20V | 40V | 3 V | 208A | 120A Tc | 772A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF6714MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | Lead Free | No | 5 | DirectFET™ Isometric MX | 506μm | 5.05mm | 2.1MOhm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 18 ns | 2.8W Ta 89W Tc | 29mA | SWITCHING | 13 ns | SILICON | N-Channel | 2.1m Ω @ 29A, 10V | 2.4V @ 100μA | 3890pF @ 13V | 44nC @ 4.5V | 26ns | 9.6 ns | 20V | 25V | 29A | 29A Ta 166A Tc | 234A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPB530N15N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 68W | 9 ns | 150V | 68W Tc | 21A | SWITCHING | 0.053Ohm | 13 ns | SILICON | N-Channel | 53m Ω @ 18A, 10V | 4V @ 35μA | 887pF @ 75V | 12nC @ 10V | 3 ns | 20V | 21A Tc | 84A | 60 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRLR3410TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.223mm | 105MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W | 7.2 ns | 79W Tc | 17A | SWITCHING | 30 ns | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 17A Tc | 60A | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||
IPI70N04S406AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tube | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 58W Tc | 0.0065Ohm | 40V | SILICON | N-Channel | 6.5m Ω @ 70A, 10V | 4V @ 26μA | 2550pF @ 25V | 32nC @ 10V | 70A | 70A Tc | 40V | 280A | 72 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S405ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | 10mm | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | 1.946308g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 107W | 20 ns | 60V | 107W Tc | 80A | 0.0057Ohm | 35 ns | SILICON | N-Channel | 5.7m Ω @ 80A, 10V | 4V @ 60μA | 6500pF @ 25V | 81nC @ 10V | 5ns | 8 ns | 20V | 60V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
AUIRFR024NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 45W | 4.9 ns | 45W Tc | 17A | SWITCHING | 0.075Ohm | 19 ns | SILICON | N-Channel | 75m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | 27 ns | 20V | 55V | 17A Tc | 68A | 71 mJ | ||||||||||||||||||||||||||||||||||||||
IPA60R750E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 27W | 9 ns | 600V | 27W Tc | 5.7A | SWITCHING | 0.75Ohm | 50 ns | SILICON | N-Channel | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 373pF @ 100V | 17.2nC @ 10V | 7ns | 12 ns | 20V | 5.7A Tc | 72 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPD90N06S4L05ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 14 ns | 60V | 107W Tc | 90A | 0.0046Ohm | 80 ns | SILICON | N-Channel | 4.6m Ω @ 90A, 10V | 2.2V @ 60μA | 8180pF @ 25V | 110nC @ 10V | 4ns | 13 ns | 16V | 90A Tc | 4.5V 10V | ±16V |
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