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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Max Breakdown Voltage | Supplier Device Package | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Input Capacitance | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC848CWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 2mm | ROHS3 Compliant | Lead Free | No | 3 | SC-70, SOT-323 | 250MHz | 800μm | 1.25mm | Surface Mount | 150°C TJ | e3 | Tin (Sn) | DUAL | GULL WING | BC848 | 250mW | 1 | Halogen Free | NPN | Single | 250mW | 100mA | 30V | 600mV | AMPLIFIER | SILICON | NPN | 250MHz | 15nA ICBO | 600mV | 100mA | 30V | 6V | 420 @ 2mA 5V | 600mV @ 5mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC858CWH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOW NOISE | SC-70, SOT-323 | 250MHz | Surface Mount | 150°C TJ | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BC858 | 250mW | 1 | SINGLE | Halogen Free | PNP | 250mW | 100mA | 30V | 650mV | AMPLIFIER | SILICON | PNP | 250MHz | 15nA ICBO | 100mA | 30V | 5V | 420 @ 2mA 5V | 650mV @ 5mA, 100mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDP949E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | 100MHz | Surface Mount | 150°C TJ | BDP949 | 5W | 1 | 5W | 60V | 3A | 60V | 500mV | NPN | 100nA ICBO | 60V | 5V | 100 @ 500mA 1V | 500mV @ 200mA, 2A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC817K40WE6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Tin | 3 | SC-70, SOT-323 | Surface Mount | 150°C TJ | DUAL | GULL WING | BC817 | 250mW | 250mW | AEC-Q101 | 1 | SINGLE | NPN | 500mA | 45V | 700mV | AMPLIFIER | SILICON | NPN | 170MHz | 100nA ICBO | 50V | 250 @ 100mA 1V | 700mV @ 50mA, 500mA | 170MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCX5216E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | 150°C | -65°C | RoHS Compliant | No | 4 | TO-243AA | Surface Mount | 150°C TJ | BCX52 | 2W | 2W | PG-SOT89 | 1A | 60V | 500mV | PNP | 100nA ICBO | 60V | 1A | 60V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | 125MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP5316H6433XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Discontinued | 1 (Unlimited) | 4 | ROHS3 Compliant | Tin | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | 15A | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BCP53 | 2W | 2W | 80V | 1 | SINGLE | COLLECTOR | PNP | 1.5W | 1A | 80V | 500mV | AMPLIFIER | SILICON | PNP | 125MHz | 100nA ICBO | 100V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | 125MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP5216H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Discontinued | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | Tin | No | 4 | TO-261-4, TO-261AA | 125MHz | Surface Mount | 150°C TJ | DUAL | GULL WING | BCP52 | Other Transistors | 2W | 1 | SINGLE | COLLECTOR | PNP | 2W | 1A | 60V | 500mV | AMPLIFIER | SILICON | PNP | 125MHz | 100nA ICBO | 1A | 60V | 5V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP51H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 1.5A | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | 45V | BCP51 | Other Transistors | 2W | 2W | Single | PNP | 1A | 45V | 500mV | PNP | 100nA ICBO | 40 @ 150mA 2V | 500mV @ 50mA, 500mA | 125MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R650CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 6 ns | 500V | 27.2W Tc | 4.6A | SWITCHING | 0.65Ohm | 27 ns | SILICON | N-Channel | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 342pF @ 100V | 15nC @ 10V | 5ns | 13 ns | 20V | 6.1A | 4.6A Tc | 19A | 102 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R650CEATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | CoolMOS™ CE | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 10 ns | 63W Tc | 7A | SWITCHING | 0.65Ohm | 600V | 58 ns | SILICON | N-Channel | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 8ns | 11 ns | 20V | 7A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3707ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET®, StrongIRFET™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.5mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 57W Tc | 59A | SWITCHING | 30V | SILICON | N-Channel | 9.5m Ω @ 21A, 10V | 2.25V @ 25μA | 1210pF @ 15V | 15nC @ 4.5V | 42A | 59A Tc | 30V | 230A | 40 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLZ24NS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 3.8W Ta 45W Tc | 18A | N-Channel | 60m Ω @ 11A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 18A Tc | 55V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R750E6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | CoolMOS™ E6 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 9 ns | 600V | 680mOhm | PG-TO252-3 | 48W Tc | 5.7A | 50 ns | N-Channel | 750mOhm @ 2A, 10V | 3.5V @ 170μA | 373pF @ 100V | 17.2nC @ 10V | 7ns | 12 ns | 20V | 5.7A Tc | 600V | 373pF | 10V | ±20V | 750 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N04S204AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Contains Lead | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 40V | 300W Tc | 100A | 0.0036Ohm | SILICON | N-Channel | 3.6m Ω @ 80A, 10V | 4V @ 250μA | 5300pF @ 25V | 172nC @ 10V | 100A Tc | 400A | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R520C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2008 | CoolMOS™ C6 | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 66W Tc | SWITCHING | 0.52Ohm | 600V | SILICON | N-Channel | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 512pF @ 100V | 23.4nC @ 10V | 8.1A | 8.1A Tc | 600V | 22A | 153 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N04S2H4AKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Through Hole | Tube | 2008 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 300W Tc | 80A | 0.004Ohm | 40V | SILICON | N-Channel | 4m Ω @ 80A, 10V | 4V @ 250μA | 4400pF @ 25V | 148nC @ 10V | 80A Tc | 40V | 320A | 660 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R330P6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Obsolete | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | 12 ns | 600V | 297mOhm | PG-TO220-3 | 93W Tc | 12A | 33 ns | N-Channel | 330mOhm @ 4.5A, 10V | 4.5V @ 370μA | 1010pF @ 100V | 22nC @ 10V | 7ns | 20V | 12A Tc | 600V | 1.01nF | 10V | ±20V | 330 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R2K0C6AKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-251-3 Short Leads, IPak, TO-251AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 600V | 22.3W Tc | 2.4A | SWITCHING | 2Ohm | SILICON | N-Channel | 2 Ω @ 760mA, 10V | 3.5V @ 60μA | 140pF @ 100V | 6.7nC @ 10V | 2.4A Tc | 6A | 11 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS4030-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | Automotive, AEC-Q101, HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 7 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 370W | 53 ns | 1V | 370W Tc | 190A | SWITCHING | 0.0039Ohm | 110 ns | SILICON | N-Channel | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 11490pF @ 50V | 140nC @ 4.5V | 160ns | 87 ns | 16V | 100V | 190A Tc | 320 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLU3110Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.73mm | RoHS Compliant | Tin | No | 3 | ULTRA-LOW RESISTANCE | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 2.39mm | 6.22mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 24 ns | 1V | 140W Tc | 63A | SWITCHING | 33 ns | SILICON | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 1 V | 42A | 42A Tc | 250A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R280CEFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 8 ns | 500V | 92W Tc | 13A | SWITCHING | 0.28Ohm | 40 ns | SILICON | N-Channel | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 773pF @ 100V | 32.6nC @ 10V | 6.4ns | 7.6 ns | 20V | Super Junction | 13A Tc | 42.9A | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R500CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | 150°C | -55°C | 10.36mm | RoHS Compliant | 3 | TO-220-3 | 15.95mm | 4.57mm | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | 57W | 1 | TO-220AB | Halogen Free | Single | 57W | 6 ns | 7.6A | SWITCHING | 0.5Ohm | 30 ns | N-Channel | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 433pF @ 100V | 18.7nC @ 10V | 5ns | 12 ns | 20V | 500V | Super Junction | 7.6A Tc | 24A | 129 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R800CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 26.4W Tc | SWITCHING | 0.8Ohm | 500V | SILICON | N-Channel | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 280pF @ 100V | 12.4nC @ 10V | Super Junction | 5A Tc | 500V | 15.5A | 83 mJ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS7437-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 231W | 18 ns | 2.2V | 231W Tc | 37 ns | 195A | 78 ns | N-Channel | 1.4m Ω @ 100A, 10V | 3.9V @ 150μA | 7437pF @ 25V | 225nC @ 10V | 62ns | 51 ns | 20V | 195A Tc | 40V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7440PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Surface Mount | Tube | 2012 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 140W | 11 ns | 3V | 140W Tc | 34 ns | 90A | SWITCHING | 0.0024Ohm | 51 ns | SILICON | N-Channel | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 4610pF @ 25V | 134nC @ 10V | 39ns | 34 ns | 20V | 40V | 3 V | 90A Tc | 760A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R650CE | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2013 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 27.2W Tc | SWITCHING | 0.65Ohm | 500V | SILICON | N-Channel | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 342pF @ 100V | 15nC @ 10V | Super Junction | 6.1A | 6.1A Tc | 500V | 19A | 102 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7820PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2012 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 7.1 ns | 4V | 2.5W Ta | 3.7A | SWITCHING | 14 ns | SILICON | N-Channel | 78m Ω @ 2.2A, 10V | 5V @ 100μA | 1750pF @ 100V | 44nC @ 10V | 3.2ns | 12 ns | 20V | 200V | 4 V | 3.7A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW50R190CEFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Tube | 2000 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | FET General Purpose Power | 1 | Single | 127W | 9.5 ns | 500V | 127W Tc | 18.5A | SWITCHING | 54 ns | SILICON | N-Channel | 190m Ω @ 6.2A, 13V | 3.5V @ 510μA | 1137pF @ 100V | 47.2nC @ 10V | 8.5ns | 7.5 ns | 20V | Super Junction | 18.5A Tc | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R650CEBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2017 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 47W Tc | SWITCHING | 0.65Ohm | 500V | SILICON | N-Channel | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 342pF @ 100V | 15nC @ 10V | 6.1A | 6.1A Tc | 500V | 19A | 102 mJ | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7446GPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | Through Hole | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 99W Tc | 120A | N-Channel | 3.3m Ω @ 70A, 10V | 3.9V @ 100μA | 3183pF @ 25V | 93nC @ 10V | 120A Tc | 40V | 6V 10V | ±20V |