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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Frequency Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Reference Standard Number of Elements Configuration JEDEC-95 Code Polarity Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Max Breakdown Voltage Power Dissipation-Max Recovery Time Max Collector Current Collector Emitter Breakdown Voltage Collector Emitter Voltage (VCEO) Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Transistor Type Transition Frequency Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Current - Collector Cutoff (Max) Collector Emitter Saturation Voltage Collector Base Voltage (VCBO) Emitter Base Voltage (VEBO) hFE Min DC Current Gain (hFE) (Min) @ Ic, Vce Vce Saturation (Max) @ Ib, Ic
    IRF7413PBF IRF7413PBF Infineon Technologies $0.00
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    		 download 14 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.011Ohm 30V SILICON N-Channel 11m Ω @ 7.3A, 10V 3V @ 250μA 1800pF @ 25V 79nC @ 10V 13A 13A Ta 30V 58A 260 mJ 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.008Ohm 30V SILICON N-Channel 8m Ω @ 14A, 10V 2V @ 250μA 3150pF @ 15V 51nC @ 4.5V 14A 14A Ta 30V 110A 320 mJ 2.7V 10V ±12V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 4.9784mm ROHS3 Compliant Lead Free Tin -11.5A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 14MOhm Surface Mount -55°C~150°C TJ -12V MOSFET (Metal Oxide) 1 Single 2.5W 8.8 ns -900mV 2.5W Ta -11.5A 291 ns P-Channel 14m Ω @ 11.5A, 4.5V 900mV @ 250μA 3529pF @ 10V 38nC @ 4.5V 8.8ns 225 ns 8V -12V -12V -900 mV 11.5A Tc 12V 1.8V 4.5V ±8V
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    		 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free 19A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 13.7 ns 2.5W Ta 19A SWITCHING 0.0045Ohm 18 ns SILICON N-Channel 4.5m Ω @ 19A, 10V 2.25V @ 250μA 3710pF @ 15V 44nC @ 4.5V 14.3ns 5 ns 20V 30V 2.25 V 19A Ta 25 mJ 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 2.5W Ta N-Channel 5m Ω @ 17A, 10V 2.25V @ 250μA 4500pF @ 20V 50nC @ 4.5V 18A Ta 40V 4.5V 10V ±20V
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    		 download 14 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0036Ohm 30V SILICON N-Channel 3.6m Ω @ 20A, 10V 2.35V @ 250μA 6240pF @ 15V 60nC @ 4.5V 21A 21A Ta 30V 170A 100 mJ 4.5V 10V ±12V
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    		 download Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.0056Ohm 30V SILICON N-Channel 5.6m Ω @ 17.2A, 10V 2.2V @ 250μA 2910pF @ 15V 36nC @ 4.5V 17.2A 17.2A Ta 30V 135A 48 mJ 4.5V 10V ±20V
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 43W Tc N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 5A Tc 200V 10V ±20V
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 79W Tc SWITCHING 0.0065Ohm 30V SILICON N-Channel 6.5m Ω @ 15A, 10V 2.25V @ 250μA 2330pF @ 15V 26nC @ 4.5V 30A 86A Tc 30V 340A 100 mJ 4.5V 10V ±20V
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.045Ohm 55V SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 20A 27A Tc 55V 100A 65 mJ 10V ±20V
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.065Ohm 55V SILICON P-Channel 65m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 31A 31A Tc 55V 110A 280 mJ 10V ±20V
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 57W Tc SWITCHING 0.11Ohm 55V SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 18A 18A Tc 55V 64A 150 mJ 10V ±20V
    IRFR024NPBF IRFR024NPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W Tc SWITCHING 0.075Ohm 55V SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 17A 17A Tc 55V 68A 71 mJ 10V ±20V
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    		 download 20 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 40W Tc SWITCHING 0.48Ohm 100V SILICON P-Channel 480m Ω @ 3.9A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 6.6A 6.6A Tc 100V 26A 100 mJ 10V ±20V
    IRFR9024NPBF IRFR9024NPBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 11A 11A Tc 55V 44A 62 mJ 10V ±20V
    IRLL3303PBF IRLL3303PBF Infineon Technologies $0.00
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    		 download 10 Weeks Tube 1999 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1W Ta N-Channel 31m Ω @ 4.6A, 10V 1V @ 250μA 840pF @ 25V 50nC @ 10V 4.6A Ta 30V 4.5V 10V ±16V
    IRLR3103PBF IRLR3103PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 55A 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 19mOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 TO-252AA DRAIN Single 69W 9 ns 107W Tc 78 ns 55A SWITCHING 20 ns SILICON N-Channel 19m Ω @ 33A, 10V 1V @ 250μA 1600pF @ 25V 50nC @ 4.5V 210ns 54 ns 16V 30V 1 V 20A 55A Tc 220A 240 mJ 4.5V 10V ±16V
    SI4435DYPBF SI4435DYPBF Infineon Technologies $0.00
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    		 download Tube 1999 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.02Ohm 30V SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 8A 8A Tc 30V 50A 4.5V 10V ±20V
    IPI80N06S2L05AKSA2 IPI80N06S2L05AKSA2 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant No 3 LOGIC LEVEL COMPATIBLE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE 19 ns 55V 300W Tc 80A SWITCHING 0.006Ohm 67 ns SILICON N-Channel 4.8m Ω @ 80A, 10V 2V @ 250μA 5700pF @ 25V 230nC @ 10V 93ns 90 ns 20V 80A Tc 800 mJ 10V ±20V
    AUIRFS8408-7TRL AUIRFS8408-7TRL Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS8408 YES FET General Purpose Power Single 294W Tc N-Channel 1m Ω @ 100A, 10V 3.9V @ 250μA 10250pF @ 25V 315nC @ 10V 240A 240A Tc 40V 10V ±20V
    IPP023N08N5AKSA1 IPP023N08N5AKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 28 ns 80V 300W Tc 120A SWITCHING 0.0023Ohm 62 ns SILICON N-Channel 2.3m Ω @ 100A, 10V 3.8V @ 208μA 12100pF @ 40V 166nC @ 10V 16ns 20 ns 20V 120A Tc 480A 674 mJ 6V 10V ±20V
    IPP024N06N3GXKSA1 IPP024N06N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 10mm ROHS3 Compliant Lead Free 3 TO-220-3 15.65mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB Halogen Free Single 41 ns 60V 250W Tc 120A SWITCHING 0.0024Ohm 79 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 4V @ 196μA 23000pF @ 30V 275nC @ 10V 20V 60V 120A Tc 480A 10V ±20V
    AUIRF1324STRL AUIRF1324STRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant No 3 ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.572mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 Single 300W 17 ns 300W Tc 195A SWITCHING 0.00165Ohm 83 ns SILICON N-Channel 1.65m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 190ns 120 ns 20V 24V 195A Tc 1420A 270 mJ 10V ±20V
    IRFSL4127PBF IRFSL4127PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.652mm 4.826mm 22MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 DRAIN Single 375W 17 ns 375W Tc 72A SWITCHING 56 ns SILICON N-Channel 22m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 72A Tc 250 mJ
    AUIRF2804STRL7P AUIRF2804STRL7P Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G6 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 330W Tc SWITCHING 0.0016Ohm 40V SILICON N-Channel 1.6m Ω @ 160A, 10V 4V @ 250μA 6930pF @ 25V 260nC @ 10V 240A 240A Tc 40V 1360A 1050 mJ 10V ±20V
    AUIRF2804STRL AUIRF2804STRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 300W 13 ns 2V 300W Tc 195A SWITCHING 130 ns SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 195A Tc 540 mJ 10V ±20V
    IRFSL7434PBF IRFSL7434PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Through Hole 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 DRAIN Single 24 ns 3V 294W Tc 195A SWITCHING 115 ns SILICON N-Channel 1.6m Ω @ 100A, 10V 3.9V @ 250μA 10820pF @ 25V 324nC @ 10V 68ns 68 ns 20V 40V 195A Tc 780A 6V 10V ±20V
    SPS03N60C3 SPS03N60C3 Infineon Technologies $0.00
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    		 download 10 Weeks Tube 2006 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole RoHS Compliant 3 AVALANCHE RATED TO-251-3 Stub Leads, IPak Unknown Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 TO-251AA Single 38W 7 ns 600V 38W Tc 3.2A 64 ns SILICON N-Channel 1.4 Ω @ 2A, 10V 3.9V @ 135μA 400pF @ 25V 17nC @ 10V 3ns 12 ns 20V 650V 650V 3 V 3.2A Tc 9.6A 100 mJ 10V ±20V
    SPD04N60C3 SPD04N60C3 Infineon Technologies $0.00
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    		 download Tube 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 50W Tc SWITCHING 0.95Ohm 600V SILICON N-Channel 950m Ω @ 2.8A, 10V 3.9V @ 200μA 490pF @ 25V 25nC @ 10V 4.5A 4.5A Tc 600V 13.5A 130 mJ 10V ±20V
    BCV62CE6327HTSA1 BCV62CE6327HTSA1 Infineon Technologies $0.00
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    		 download 4 Weeks Surface Mount Tape & Reel (TR) 2001 Last Time Buy 1 (Unlimited) 4 EAR99 2.9mm ROHS3 Compliant Lead Free Tin -100mA 4 TO-253-4, TO-253AA No SVHC 250MHz 1mm 2.9mm Surface Mount 150°C TJ -30V e3 GULL WING NOT SPECIFIED NOT SPECIFIED BCV62 300mW AEC-Q101 2 PNP Not Halogen Free Dual 300mW 30V 100mA 30V 650mV SILICON 2 PNP (Dual) 250MHz 15nA ICBO 650mV 30V 6V 125 420 @ 2mA 5V 650mV @ 5mA, 100mA