Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRLZ44NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 47A | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 22mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 110W | 11 ns | 2V | 3.8W Ta 110W Tc | 120 ns | 47A | SWITCHING | 26 ns | SILICON | N-Channel | 22m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 55V | 2 V | 47A Tc | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
IRFH5250DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | 838.2μm | 5mm | 1.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 23 ns | 3.6W Ta 156W Tc | 100A | SWITCHING | 23 ns | SILICON | N-Channel | 1.4m Ω @ 50A, 10V | 2.35V @ 150μA | 6115pF @ 13V | 83nC @ 10V | 72ns | 24 ns | 20V | 25V | 40A | 40A Ta 100A Tc | 400A | 470 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPD038N06N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 188W | 30 ns | 60V | 188W Tc | 90A | SWITCHING | 40 ns | SILICON | N-Channel | 3.8m Ω @ 90A, 10V | 4V @ 90μA | 8000pF @ 30V | 98nC @ 10V | 70ns | 5 ns | 20V | 90A Tc | 165 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFH8303TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 3.7W | 21 ns | 1.7V | 3.7W Ta 156W Tc | 100A | 48 ns | N-Channel | 1.1m Ω @ 50A, 10V | 2.2V @ 150μA | 7736pF @ 24V | 179nC @ 10V | 91ns | 65 ns | 20V | 30V | 43A | 43A Ta 100A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB50N10S3L16ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 10 ns | 100V | 100W Tc | 50A | 0.0206Ohm | 28 ns | SILICON | N-Channel | 15.4m Ω @ 50A, 10V | 2.4V @ 60μA | 4180pF @ 25V | 64nC @ 10V | 5ns | 20V | 50A Tc | 200A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFS4020TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.652mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 100W | 7.8 ns | 100W Tc | 18A | SWITCHING | 16 ns | SILICON | N-Channel | 105m Ω @ 11A, 10V | 4.9V @ 100μA | 1200pF @ 50V | 29nC @ 10V | 12ns | 6.3 ns | 20V | 200V | 18A Tc | 52A | 94 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRF2807ZSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 7.4MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 18 ns | 170W Tc | 75A | SWITCHING | 40 ns | SILICON | N-Channel | 9.4m Ω @ 53A, 10V | 4V @ 250μA | 3270pF @ 25V | 110nC @ 10V | 79ns | 45 ns | 20V | 75V | 89A | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF1405STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 131A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.084mm | 9.65mm | 5.3MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 200W | 13 ns | 200W Tc | 130 ns | 131A | 175°C | SWITCHING | 130 ns | SILICON | N-Channel | 5.3m Ω @ 101A, 10V | 4V @ 250μA | 5480pF @ 25V | 260nC @ 10V | 190ns | 110 ns | 20V | 55V | 75A | 131A Tc | 680A | 590 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFS7762TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 11 ns | 140W Tc | 85A | 57 ns | N-Channel | 6.7m Ω @ 51A, 10V | 3.7V @ 100μA | 4440pF @ 25V | 130nC @ 10V | 49ns | 40 ns | 20V | 85A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7437TRL7PP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 7 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | No SVHC | 1.4MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 231W | 18 ns | 2.2V | 231W Tc | 195A | 78 ns | N-Channel | 1.4m Ω @ 100A, 10V | 3.9V @ 150μA | 7437pF @ 25V | 225nC @ 10V | 62ns | 51 ns | 20V | 40V | 195A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC100N10NSFGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 18 ns | 100V | 156W Tc | 11.4A | SWITCHING | 26 ns | SILICON | N-Channel | 10m Ω @ 25A, 10V | 4V @ 110μA | 2900pF @ 50V | 44nC @ 10V | 23ns | 7 ns | 20V | 11.4A Ta 90A Tc | 360A | 377 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPB026N06NATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 136W | 17 ns | 60V | 3W Ta 136W Tc | 100A | SWITCHING | 0.0026Ohm | 30 ns | SILICON | N-Channel | 2.6m Ω @ 100A, 10V | 2.8V @ 75μA | 4100pF @ 30V | 56nC @ 10V | 15ns | 8 ns | 20V | 60V | 25A | 25A Ta 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPD025N06NATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Cut Tape (CT) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.5mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 3W | 16 ns | 60V | 3W Ta 167W Tc | 90A | 175°C | SWITCHING | 0.0025Ohm | 34 ns | SILICON | N-Channel | 2.5m Ω @ 90A, 10V | 2.8V @ 95μA | 5200pF @ 30V | 71nC @ 10V | 20ns | 12 ns | 20V | 60V | 26A | 90A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFS31N20DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 31A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 82mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | DRAIN | Single | 200W | 13 ns | 5.5V | 3.1W Ta 200W Tc | 31A | SWITCHING | 23 ns | SILICON | N-Channel | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 2370pF @ 25V | 107nC @ 10V | 38ns | 10 ns | 30V | 200V | 200V | 5.5 V | 31A Tc | 420 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
IRFS23N15DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 23A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 10 ns | 3.8W Ta 136W Tc | 23A | SWITCHING | 0.09Ohm | 18 ns | SILICON | N-Channel | 90m Ω @ 14A, 10V | 5.5V @ 250μA | 1200pF @ 25V | 56nC @ 10V | 32ns | 8.4 ns | 30V | 150V | 23A Tc | 92A | 260 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
IPD60R180P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 72W Tc | SWITCHING | 0.18Ohm | 600V | SILICON | N-Channel | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 1081pF @ 400V | 25nC @ 10V | 18A Tc | 650V | 53A | 56 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BSC077N12NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 26 ns | 120V | 139W Tc | 98A | SWITCHING | 0.0077Ohm | 41 ns | SILICON | N-Channel | 7.7m Ω @ 50A, 10V | 4V @ 110μA | 5700pF @ 60V | 88nC @ 10V | 24ns | 10 ns | 20V | 13.4A | 13.4A Ta 98A Tc | 392A | 330 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPB042N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 214W | 27 ns | 100V | 214W Tc | 137A | 175°C | SWITCHING | 0.0042Ohm | 48 ns | SILICON | N-Channel | 4.2m Ω @ 50A, 10V | 3.5V @ 150μA | 8410pF @ 50V | 117nC @ 10V | 59ns | 14 ns | 20V | 100V | 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPB320N20N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 136W | 11 ns | 136W Tc | 34A | SWITCHING | 200V | 21 ns | SILICON | N-Channel | 32m Ω @ 34A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 9ns | 4 ns | 20V | 34A Tc | 200V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPB80N06S2L06ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10mm | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.4mm | 9.25mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 250W | 11 ns | 55V | 250W Tc | 80A | 0.0084Ohm | 60 ns | SILICON | N-Channel | 6m Ω @ 69A, 10V | 2V @ 180μA | 3800pF @ 25V | 150nC @ 10V | 21ns | 20 ns | 20V | 55V | 80A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
AUIRF3205ZSTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 18 ns | 170W Tc | 75A | SWITCHING | 0.0065Ohm | 45 ns | SILICON | N-Channel | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 3450pF @ 25V | 110nC @ 10V | 95ns | 67 ns | 20V | 55V | 75A Tc | 440A | 250 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPI45N06S4L08AKSA3 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | 2009 | yes | Last Time Buy | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Contains Lead | 3 | TO-262-3 | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 71W | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-262AA | DRAIN | Halogen Free | N-CHANNEL | 9 ns | 60V | 45A | 0.0082Ohm | METAL-OXIDE SEMICONDUCTOR | 45 ns | 2ns | 8 ns | 16V | 60V | 180A | 97 mJ | 4.78nF | 8.2 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD70P04P4L08ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | DRAIN | Halogen Free | Single | 12 ns | -40V | 75W Tc | 70A | 0.0078Ohm | 50 ns | SILICON | P-Channel | 7.8m Ω @ 70A, 10V | 2.2V @ 120μA | 5430pF @ 25V | 92nC @ 10V | 10ns | 41 ns | 16V | 70A Tc | 40V | 280A | 24 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
IPD50N03S207ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 18 ns | 30V | 136W Tc | 50A | 26 ns | SILICON | N-Channel | 7.3m Ω @ 50A, 10V | 4V @ 85μA | 2000pF @ 25V | 68nC @ 10V | 40ns | 30 ns | 20V | 50A Tc | 200A | 250 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSC014N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 32 ns | 30V | 2.5W Ta 139W Tc | 30A | SWITCHING | 43 ns | SILICON | N-Channel | 1.4m Ω @ 30A, 10V | 2V @ 250μA | 13000pF @ 15V | 173nC @ 10V | 16ns | 20V | 30A Ta 100A Tc | 400A | 340 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRL530NSTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W Ta 79W Tc | SWITCHING | 0.12Ohm | 100V | SILICON | N-Channel | 100m Ω @ 9A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 17A | 17A Tc | 100V | 60A | 150 mJ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPP037N06L3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 167W | 25 ns | 60V | 167W Tc | 90A | SWITCHING | SILICON | N-Channel | 3.7m Ω @ 90A, 10V | 2.2V @ 93μA | 13000pF @ 30V | 79nC @ 4.5V | 13 ns | 90A Tc | 165 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPW60R160P6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ P6 | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 12.5 ns | 600V | 144mOhm | PG-TO247-3 | 176W Tc | 23.8A | 40 ns | N-Channel | 160mOhm @ 9A, 10V | 4.5V @ 750μA | 2080pF @ 100V | 44nC @ 10V | 7.6ns | 5.8 ns | 20V | 23.8A Tc | 600V | 2.08nF | 10V | ±20V | 160 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0501NSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 30V | 2.5W Ta 50W Tc | 100A | SWITCHING | 0.0024Ohm | SILICON | N-Channel | 1.9m Ω @ 30A, 10V | 2V @ 250μA | 2200pF @ 15V | 33nC @ 10V | 4ns | 20V | Schottky Diode (Body) | 29A | 29A Ta 100A Tc | 400A | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPAN60R650CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2013 | CoolMOS™ | yes | Active | Not Applicable | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | 9.9A | SWITCHING | 0.65Ohm | 600V | SILICON | N-Channel | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | Super Junction | 9.9A Tc | 600V | 19A | 133 mJ | 10V | ±20V |
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