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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IPW60R041C6FKSA1 IPW60R041C6FKSA1 Infineon Technologies $0.00
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    		 download Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 481W Tc SWITCHING 0.041Ohm 600V SILICON N-Channel 41m Ω @ 44.4A, 10V 3.5V @ 2.96mA 6530pF @ 10V 290nC @ 10V 77.5A Tc 600V 272A 1954 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 3 HIGH RELIABILITY TO-220-3 not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 16 ns 650V 277.8W Tc 31.2A SWITCHING 0.11Ohm 68 ns SILICON N-Channel 110m Ω @ 12.7A, 10V 4.5V @ 1.3mA 3240pF @ 100V 118nC @ 10V 11ns 6 ns 20V 31.2A Tc 99.6A 845 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 15 ns 3.6W Ta 59W Tc 27A SWITCHING 18 ns SILICON N-Channel 3.1m Ω @ 20A, 10V 2.35V @ 50μA 3180pF @ 10V 41nC @ 10V 33ns 12 ns 20V 30V 1.8 V 50A 27A Ta 120A Tc 400A 4.5V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 1999 CoolMOS™ C7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Halogen Free 600V 227W Tc 50A N-Channel 40m Ω @ 24.9A, 10V 4V @ 1.24mA 4340pF @ 400V 107nC @ 10V 50A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free Tin 13.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 9MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 6.3 mm Single 2.5W 14 ns 1V 2.5W Ta 13.3A SWITCHING 96 ns SILICON N-Channel 9m Ω @ 15A, 4.5V 1V @ 250μA 3780pF @ 16V 62nC @ 5V 36ns 10 ns 12V 30V 30V 1 V 13.3A Ta 4.5V ±12V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 2 (1 Year) 3 SMD/SMT EAR99 6.096mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 939.8μm 5.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 30 R-PDSO-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.4W 20 ns 1.8V 3.4W Ta 24A SWITCHING 0.0033Ohm 23 ns SILICON N-Channel 3.3m Ω @ 25A, 10V 2.35V @ 100μA 4270pF @ 15V 51nC @ 4.5V 48ns 20 ns 20V 30V 30V 1.8 V 25A 24A Ta 104A Tc 4.5V 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 55V 136W Tc 30A 0.0147Ohm SILICON N-Channel 14.7m Ω @ 30A, 10V 4V @ 80μA 1485pF @ 25V 110nC @ 10V 30A Tc 120A 240 mJ 10V ±20V
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    		 download 18 Weeks Tube 2018 CoolMOS™ P7 Active 1 (Unlimited) 4 EAR99 ROHS3 Compliant TO-247-4 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T4 1 SINGLE WITH BUILT-IN DIODE 164W Tc SWITCHING 0.06Ohm 600V SILICON N-Channel 60m Ω @ 15.9A, 10V 4V @ 800μA 2895pF @ 400V 67nC @ 10V 48A Tc 600V 151A 159 mJ 10V ±20V
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    		 download 18 Weeks Tube OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 178W Tc N-Channel 55m Ω @ 18A, 10V 4.5V @ 900μA 3194pF @ 400V 79nC @ 10V 38A Tc 600V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm 4.7Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330W 14 ns 4V 330W Tc 120 ns 75A SWITCHING 68 ns SILICON N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 55V 4 V 75A Tc 700A 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 20.7mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 Halogen Free 278W 20 ns 3.5V 600V 278W Tc 37.9A 150°C 50 ns N-Channel 99m Ω @ 14.5A, 10V 4.5V @ 1.21mA 3330pF @ 100V 70nC @ 10V 10ns 5 ns 20V 600V 37.9A Tc 10V ±20V
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE 176W 13 ns 600V 176W Tc 23.8A SWITCHING 96 ns SILICON N-Channel 160m Ω @ 11.3A, 10V 3.5V @ 750μA 1660pF @ 100V 75nC @ 10V 8 ns 20V 23.8A Tc 70A 497 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 19 ns 75V 300W Tc 120A SWITCHING 70 ns SILICON N-Channel 2.3m Ω @ 100A, 10V 3.8V @ 273μA 14400pF @ 37.5V 206nC @ 10V 26ns 22 ns 20V 120A Tc 480A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2012 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC Through Hole 38.000013g -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 16 ns 4V 375W Tc 195A 118 ns N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 4V 195A Tc 60V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 22 ns 150V 39W Tc 43A SWITCHING 0.0075Ohm 50 ns SILICON N-Channel 7.5m Ω @ 43A, 10V 4V @ 270μA 7280pF @ 75V 93nC @ 10V 25ns 15 ns 20V 43A Tc 172A 1000 mJ 8V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free 60A No 3 TO-220-3 No SVHC 15.24mm 4.69mm 32Ohm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330W 18 ns 2.4W Ta 330W Tc 60A SWITCHING 28 ns SILICON N-Channel 32m Ω @ 36A, 10V 5.5V @ 250μA 3470pF @ 25V 140nC @ 10V 110ns 51 ns 16V 150V 150V 5.5 V 60A Tc 250A 520 mJ 10V ±30V
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ G7 yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 8-PowerSFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE FLAT NOT SPECIFIED NOT SPECIFIED YES R-PSSO-F3 1 SINGLE WITH BUILT-IN DIODE DRAIN 141W Tc SWITCHING 0.102Ohm 600V SILICON N-Channel 102m Ω @ 7.8A, 10V 4V @ 390μA 1320pF @ 400V 34nC @ 10V 23A 23A Tc 650V 66A 78 mJ 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant No 3 TO-220-3 No SVHC 9.017mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 18 ns 2V 200W Tc 160A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 160A Tc 480 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 151W 12 ns 600V 151W Tc 20.2A SWITCHING 90 ns SILICON N-Channel 190m Ω @ 9.5A, 10V 3.5V @ 630μA 1400pF @ 100V 63nC @ 10V 10ns 8 ns 20V 20.2A Tc 59A 10V ±20V
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    		 download 10 Weeks Through Hole Tube 2007 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 370W 25 ns 4V 370W Tc 180A SWITCHING 0.0045Ohm 78 ns SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 9620pF @ 50V 210nC @ 10V 67ns 88 ns 20V 100V 4 V 120A Tc 670A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 63W 9.7 ns 63W Tc 81A SWITCHING 0.0057Ohm 12 ns SILICON N-Channel 5.7m Ω @ 25A, 10V 2.35V @ 25μA 1470pF @ 13V 15nC @ 4.5V 46ns 8.5 ns 20V 25V 81A Tc 86 mJ 4.5V 10V ±20V
    BSP320SH6327XTSA1 BSP320SH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2007 SIPMOS™ yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 AVALANCHE RATED TO-261-4, TO-261AA No SVHC 1.6mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 FET General Purpose Power 1 Halogen Free Single 1.8W 11 ns 3V 60V 1.8W Ta 56 ns 2.9A 25 ns SILICON N-Channel 120m Ω @ 2.9A, 10V 4V @ 20μA 340pF @ 25V 12nC @ 10V 25ns 35 ns 20V 2.9A Tj 60 mJ 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 41W Tc 0.0093Ohm 40V SILICON N-Channel 9.3m Ω @ 50A, 10V 4V @ 15μA 1430pF @ 25V 18.2nC @ 10V 50A 50A Tc 40V 200A 42 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-251-3 Stub Leads, IPak not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 700V 68W Tc 7.4A SWITCHING 0.95Ohm SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 150μA 328pF @ 100V 15.3nC @ 10V Super Junction 7.4A Tc 12A 50 mJ 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 34.7W Tc SWITCHING 0.75Ohm 700V SILICON N-Channel 750m Ω @ 1.4A, 10V 3.5V @ 70μA 306pF @ 400V 8.3nC @ 400V 6.5A Tc 700V 15.4A 10V ±16V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant Lead Free Silver 3-WDSON Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e4 BOTTOM NO LEAD 3 R-MBCC-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 2.8W Ta 89W Tc 35A SWITCHING 0.0015Ohm SILICON N-Channel 1.5m Ω @ 30A, 10V 4V @ 250μA 12000pF @ 20V 142nC @ 10V 6.4ns 20V 180A 36A Ta 180A Tc 400A 290 mJ 10V ±20V
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    		 download 26 Weeks Surface Mount Tube 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 110W 14 ns 2V 110W Tc 59A SWITCHING 31 ns SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 66ns 35 ns 20V 55V 42A 42A Tc 240A 55 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 Unknown 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Single 39 ns 2.4V 231W Tc 195A 88 ns N-Channel 1.9m Ω @ 100A, 10V 2.4V @ 150μA 8320pF @ 25V 137nC @ 4.5V 20V 195A Tc 40V 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 2MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 DRAIN Single 300W 13 ns 4V 300W Tc 84 ns 75A 175°C SWITCHING 130 ns SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 75A Tc 540 mJ 10V ±20V
    IPA65R650CEXKSA1 IPA65R650CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ CE yes Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 Full Pack Through Hole 6.000006g -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 Halogen Free 650V 28W Tc 7A N-Channel 650m Ω @ 2.1A, 10V 3.5V @ 210μA 440pF @ 100V 23nC @ 10V 7A Tc 10V ±20V