Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Min) | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BSF450NE7NH3XUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Nickel | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e4 | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | 75V | 2.2W Ta 18W Tc | 15A | N-Channel | 45m Ω @ 8A, 10V | 3.5V @ 8μA | 390pF @ 37.5V | 6nC @ 10V | 11.3ns | 20V | 75V | 5A Ta 15A Tc | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB7746PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 9.9 ns | 99W Tc | 59A | 33 ns | N-Channel | 10.6m Ω @ 35A, 10V | 3.7V @ 100μA | 3049pF @ 25V | 83nC @ 10V | 36ns | 30 ns | 20V | 59A Tc | 75V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR5410TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 66W Tc | SWITCHING | 0.205Ohm | 100V | SILICON | P-Channel | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 13A | 13A Tc | 100V | 52A | 194 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPAN65R650CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | 10.1A | SWITCHING | 0.65Ohm | 650V | SILICON | N-Channel | 650m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | Super Junction | 10.1A Tc | 650V | 18A | 142 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFR3708TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 87W Tc | SWITCHING | 0.0125Ohm | 30V | SILICON | N-Channel | 12.5m Ω @ 15A, 10V | 2V @ 250μA | 2417pF @ 15V | 24nC @ 4.5V | 30A | 61A Tc | 30V | 244A | 213 mJ | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
BSZ070N08LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | S-PDSO-N3 | -55°C | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | SWITCHING | 0.007Ohm | 80V | METAL-OXIDE SEMICONDUCTOR | SILICON | 13A | 160A | 104 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB7740PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | No SVHC | 16.51mm | 4.83mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 12 ns | 143W Tc | 87A | 55 ns | N-Channel | 7.3m Ω @ 52A, 10V | 3.7V @ 100μA | 4650pF @ 25V | 122nC @ 10V | 60ns | 45 ns | 20V | 75V | 87A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
BSB104N08NP3GXUSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | 3 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | Silver/Nickel (Ag/Ni) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.8W Ta 42W Tc | 50A | SWITCHING | 0.0104Ohm | 80V | SILICON | N-Channel | 10.4m Ω @ 10A, 10V | 3.5V @ 40μA | 2100pF @ 40V | 31nC @ 10V | 4ns | 20V | 13A Ta 50A Tc | 80V | 200A | 110 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFH5110TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 838.2μm | 5mm | 12.4MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.8 ns | 4V | 3.6W Ta 114W Tc | 63A | SWITCHING | 22 ns | SILICON | N-Channel | 12.4m Ω @ 37A, 10V | 4V @ 100μA | 3152pF @ 25V | 72nC @ 10V | 9.6ns | 6.4 ns | 20V | 100V | 11A Ta 63A Tc | 252A | 93 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRLZ44ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 51A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 8.77mm | 4.826mm | 13.5mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | TO-220AB | DRAIN | Single | 80W | 14 ns | 3V | 80W Tc | 32 ns | 51A | SWITCHING | 25 ns | SILICON | N-Channel | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 1620pF @ 25V | 36nC @ 5V | 160ns | 42 ns | 16V | 55V | 55V | 3 V | 51A Tc | 204A | 78 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
IRF8327STRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | DirectFET™ Isometric SQ | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 42W | 7.8 ns | 2.2W Ta 42W Tc | 60A | SWITCHING | 0.0073Ohm | 9.3 ns | SILICON | N-Channel | 7.3m Ω @ 14A, 10V | 2.4V @ 25μA | 1430pF @ 15V | 14nC @ 4.5V | 8.9ns | 5.3 ns | 20V | 30V | 14A | 14A Ta 60A Tc | 110A | 62 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFR13N15DTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 14A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 180mOhm | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 86W | 8 ns | 5.5V | 86W Tc | 14A | SWITCHING | 12 ns | SILICON | N-Channel | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 620pF @ 25V | 29nC @ 10V | 26ns | 11 ns | 30V | 150V | 150V | 5.5 V | 14A Tc | 56A | 10V | ±30V | |||||||||||||||||||||||||||||||
IRLR8103VTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 115W Tc | SWITCHING | 0.0105Ohm | 30V | SILICON | N-Channel | 9m Ω @ 15A, 10V | 3V @ 250μA | 2672pF @ 16V | 27nC @ 5V | 91A | 91A Tc | 30V | 363A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSC065N06LS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 5 ns | 46W Tc | 15A | 150°C | SWITCHING | 0.0065Ohm | 14 ns | SILICON | N-Channel | 6.5m Ω @ 32A, 10V | 2.3V @ 20μA | 1800pF @ 30V | 13nC @ 4.5V | 20V | 60V | 64A Tc | 256A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRFR1205TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 1998 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 107W Tc | SWITCHING | 0.027Ohm | 55V | SILICON | N-Channel | 27m Ω @ 26A, 10V | 4V @ 250μA | 1300pF @ 25V | 65nC @ 10V | 20A | 44A Tc | 55V | 160A | 210 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPD30N12S3L31ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | not_compliant | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | -55°C | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252 | DRAIN | N-CHANNEL | 0.042Ohm | 120V | METAL-OXIDE SEMICONDUCTOR | SILICON | 30A | 120A | 138 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFML8244TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.02mm | 1.4mm | 41MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | 1 | Single | 1.25W | 2.7 ns | 1.7V | 1.25W Ta | 17 ns | 5.8A | SWITCHING | 9 ns | SILICON | N-Channel | 24m Ω @ 5.8A, 10V | 2.35V @ 10μA | 430pF @ 10V | 5.4nC @ 10V | 2.1ns | 2.9 ns | 20V | 25V | 1.7 V | 5.8A Ta | 24A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRLR3410TRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W Tc | SWITCHING | 0.125Ohm | 100V | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 17A | 17A Tc | 100V | 60A | 150 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IPD50N03S4L06ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | 30V | 56W Tc | 50A | 0.0055Ohm | 19 ns | SILICON | N-Channel | 5.5m Ω @ 50A, 10V | 2.2V @ 20μA | 2330pF @ 25V | 31nC @ 10V | 1ns | 7 ns | 16V | 50A Tc | 200A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
IPA50R800CEXKSA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | CoolMOS™ CE | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 6.2 ns | 500V | 26.4W Tc | 4.1A | SWITCHING | 0.8Ohm | 26 ns | SILICON | N-Channel | 800m Ω @ 1.5A, 13V | 3.5V @ 130μA | 280pF @ 100V | 12.4nC @ 10V | 5.5ns | 15.9 ns | 20V | 4.1A Tc | 15.5A | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPD050N03LGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.41mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | TO-252AA | DRAIN | Halogen Free | Single | 68W | 6.7 ns | 30V | 68W Tc | 50A | SWITCHING | 25 ns | SILICON | N-Channel | 5m Ω @ 30A, 10V | 2.2V @ 250μA | 3200pF @ 15V | 31nC @ 10V | 13ns | 3.8 ns | 20V | 30V | 50A Tc | 60 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPD65R1K4CFDBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Cut Tape (CT) | 2003 | CoolMOS™ | no | Last Time Buy | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 8 ns | 650V | 28.4W Tc | 2.8A | 33 ns | N-Channel | 1.4 Ω @ 1A, 10V | 4.5V @ 100μA | 262pF @ 100V | 10nC @ 10V | 6ns | 18.2 ns | 20V | 700V | 2.8A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSO613SPVGHUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | RoHS Compliant | Lead Free | Tin | -3.44A | 8 | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | Surface Mount | -55°C~150°C TJ | -60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-SO 8 | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | 1 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Not Halogen Free | 2.5W | 10 ns | -3V | -60V | 2.5W Ta | -3.44A | 32 ns | SILICON | P-Channel | 130m Ω @ 3.44A, 10V | 4V @ 1mA | 875pF @ 25V | 30nC @ 10V | 11ns | 20V | -60V | 3.44A Ta | 60V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
BSO080P03NS3EGXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 16 ns | -30V | 1.6W Ta | 12A | SWITCHING | 64 ns | SILICON | P-Channel | 8m Ω @ 14.8A, 10V | 3.1V @ 150μA | 6750pF @ 15V | 81nC @ 10V | 47ns | 19 ns | 25V | 12A Ta | 30V | 149 mJ | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
IPB65R420CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 83.3W | 10 ns | 4V | 650V | 83.3W Tc | 8.7A | SWITCHING | 0.42Ohm | 38 ns | SILICON | N-Channel | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 870pF @ 100V | 32nC @ 10V | 7ns | 8 ns | 20V | 8.7A Tc | 27A | 227 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPB60R950C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 37W | 10 ns | 3V | 600V | 37W Tc | 4.4A | SWITCHING | 0.95Ohm | 60 ns | SILICON | N-Channel | 950m Ω @ 1.5A, 10V | 3.5V @ 130μA | 280pF @ 100V | 13nC @ 10V | 8ns | 13 ns | 20V | 4.4A Tc | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPB65R660CFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 650V | 62.5W Tc | 6A | SWITCHING | 0.66Ohm | 40 ns | SILICON | N-Channel | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 615pF @ 100V | 22nC @ 10V | 8ns | 10 ns | 20V | 6A | 6A Tc | 17A | 115 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPD60R520CPBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | 66W | 17 ns | 600V | 66W Tc | 6.8A | SWITCHING | 0.52Ohm | 74 ns | SILICON | N-Channel | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 630pF @ 100V | 31nC @ 10V | 12ns | 16 ns | 20V | 6.8A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSB012NE2LX | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 3 (168 Hours) | 2 | EAR99 | RoHS Compliant | No | 7 | 3-WDSON | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | BOTTOM | 2 | YES | R-MBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 5.7 ns | 2.8W Ta 57W Tc | 56A | SWITCHING | 0.0012Ohm | 25V | 34 ns | SILICON | N-Channel | 1.2m Ω @ 30A, 10V | 2V @ 250μA | 4900pF @ 12V | 67nC @ 10V | 6ns | 4.6 ns | 20V | 39A | 37A Ta 170A Tc | 25V | 400A | 285 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AUIRF7478QTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | 26MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 2.5W | 7.7 ns | 2.5W Ta | 7A | 44 ns | N-Channel | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 1740pF @ 25V | 31nC @ 4.5V | 2.6ns | 13 ns | 20V | 60V | 7A | 7A Ta | 4.5V 10V | ±20V |
Products