Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Max Frequency | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Polarity/Channel Type | Element Configuration | Power Dissipation | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Max Breakdown Voltage | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Transistor Type | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
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BSC010N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Cut Tape (CT) | 2003 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 10 ns | 1.2V | 40V | 2.5W Ta 139W Tc | 100A | 150°C | SWITCHING | 46 ns | SILICON | N-Channel | 1m Ω @ 50A, 10V | 2V @ 250μA | 6800pF @ 20V | 95nC @ 10V | 12ns | 9 ns | 20V | 40V | 38A Ta 100A Tc | 400A | 330 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU4615PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.39mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 144W | 15 ns | 5V | 144W Tc | 33A | SWITCHING | 0.042Ohm | 25 ns | SILICON | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 150V | 5 V | 33A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSB056N10NN3GXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 3 (168 Hours) | 3 | EAR99 | ROHS3 Compliant | Lead Free | Silver | No | 3 | 3-WDSON | No SVHC | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | BOTTOM | 3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.8W | 2.7V | 100V | 2.8W Ta 78W Tc | 9A | SWITCHING | 0.0056Ohm | SILICON | N-Channel | 5.6m Ω @ 30A, 10V | 3.5V @ 100μA | 5500pF @ 50V | 74nC @ 10V | 9ns | 20V | 9A | 9A Ta 83A Tc | 450 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB3306PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 160A | No | 3 | TO-220-3 | No SVHC | 19.8mm | 4.826mm | 4.2MOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 230W | 15 ns | 4V | 230W Tc | 31 ns | 160A | 175°C | SWITCHING | 40 ns | SILICON | N-Channel | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 4520pF @ 50V | 120nC @ 10V | 76ns | 77 ns | 20V | 60V | 120A Tc | 620A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD90P04P405ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2010 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 3 ns | -40V | 125W Tc | 90A | 0.0047Ohm | 7 ns | SILICON | P-Channel | 4.7m Ω @ 90A, 10V | 4V @ 250μA | 10300pF @ 25V | 154nC @ 10V | 8ns | 14 ns | 20V | 90A Tc | 40V | 60 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH5006TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 6.1468mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 990.6μm | 5.15mm | 4.1MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W | 9.6 ns | 2V | 3.6W Ta 156W Tc | 100A | SWITCHING | 30 ns | SILICON | N-Channel | 4.1m Ω @ 50A, 10V | 4V @ 150μA | 4175pF @ 30V | 100nC @ 10V | 13ns | 12 ns | 20V | 60V | 2 V | 21A Ta 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR120NTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | 11A | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 185mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 4 ns | 2V | 48W Tc | 160 ns | 10A | 175°C | SWITCHING | 23 ns | SILICON | N-Channel | 185m Ω @ 6A, 10V | 2V @ 250μA | 440pF @ 25V | 20nC @ 5V | 35ns | 22 ns | 16V | 100V | 100V | 2 V | 10A Tc | 85 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
SI4410DYTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 10A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 13.5mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | Single | 2.5W | 11 ns | 1V | 2.5W Ta | 10A | SWITCHING | 38 ns | SILICON | N-Channel | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 1585pF @ 15V | 45nC @ 10V | 7.7ns | 44 ns | 20V | 30V | 30V | 1 V | 10A Ta | 50A | 400 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD30N10S3L34ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 57W | 100V | 57W Tc | 30A | SILICON | N-Channel | 31m Ω @ 30A, 10V | 2.4V @ 29μA | 1976pF @ 25V | 31nC @ 10V | 20V | 30A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7478TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | 4.2A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 26MOhm | Surface Mount | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | 1 | FET General Purpose Power | Single | 2.5W | 7.7 ns | 3V | 2.5W Ta | 4.2A | 150°C | 44 ns | N-Channel | 26m Ω @ 4.2A, 10V | 3V @ 250μA | 1740pF @ 25V | 31nC @ 4.5V | 2.6ns | 13 ns | 20V | 60V | 7A | 7A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC90N04S5L3R3ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 62W Tc | 0.0047Ohm | 40V | SILICON | N-Channel | 3.3m Ω @ 45A, 10V | 2V @ 23μA | 2145pF @ 25V | 40nC @ 10V | 90A | 90A Tc | 40V | 360A | 40 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR5305TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.73mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -31A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 65mOhm | Surface Mount | -55°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 110W | 14 ns | -4V | 55V | 110W Tc | 110 ns | -31A | 175°C | SWITCHING | 39 ns | SILICON | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | -55V | -4 V | 31A Tc | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRLL3303TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Not For New Designs | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 4.6A | No | 3 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 31mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 7.2 ns | 1V | 1W Ta | 98 ns | 4.6A | SWITCHING | 33 ns | SILICON | N-Channel | 31m Ω @ 4.6A, 10V | 1V @ 250μA | 840pF @ 25V | 50nC @ 10V | 22ns | 28 ns | 16V | 30V | 30V | 1 V | 6.5A | 4.6A Ta | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7404TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -6.7A | No | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 40mOhm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | Other Transistors | 1 | 6.3 mm | Single | 2.5W | 14 ns | -700mV | 2.5W Ta | 100 ns | -6.7A | 100 ns | SILICON | P-Channel | 40m Ω @ 3.2A, 4.5V | 700mV @ 250μA | 1500pF @ 15V | 50nC @ 4.5V | 32ns | 65 ns | 12V | -20V | -20V | -700 mV | 5.3A | 6.7A Ta | 20V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
BSC100N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 8 ns | 60V | 2.5W Ta 50W Tc | 12A | SWITCHING | 19 ns | SILICON | N-Channel | 10m Ω @ 50A, 10V | 2.2V @ 23μA | 3500pF @ 30V | 45nC @ 10V | 58ns | 20V | 12A Ta 50A Tc | 200A | 22 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR92PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | SIPMOS® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-236-3, SC-59, SOT-23-3 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 6.4 ns | -1.5V | -250V | 500mW Tc | 140mA | 75 ns | SILICON | P-Channel | 11 Ω @ 140mA, 10V | 1V @ 130μA | 109pF @ 25V | 4.8nC @ 10V | 6.3ns | 71 ns | 20V | 0.14A | 140mA Ta | 250V | 8 pF | 2.8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSP149H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2002 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 4 | TO-261-4, TO-261AA | No SVHC | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | 1 | FET General Purpose Powers | 1 | DRAIN | Halogen Free | Single | 1.8W | 5.1 ns | -1.4V | 200V | 1.8W Ta | 480mA | 45 ns | SILICON | N-Channel | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 430pF @ 25V | 14nC @ 5V | 3.4ns | 21 ns | 20V | 200V | 200V | Depletion Mode | -1.4 V | 0.66A | 660mA Ta | 2.6A | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR2908TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | 30A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 28mOhm | Surface Mount | -55°C~175°C TJ | 80V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 120W | 12 ns | 1V | 120W Tc | 30A | 175°C | SWITCHING | 36 ns | SILICON | N-Channel | 28m Ω @ 23A, 10V | 2.5V @ 250μA | 1890pF @ 25V | 33nC @ 4.5V | 95ns | 55 ns | 16V | 80V | 80V | 1 V | 30A Tc | 250 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPD50P04P4L11ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 58W | 12 ns | -40V | 58W Tc | 50A | 46 ns | SILICON | P-Channel | 10.6m Ω @ 50A, 10V | 2.2V @ 85μA | 3900pF @ 25V | 59nC @ 10V | 9ns | 39 ns | 16V | 50A Tc | 40V | 200A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML2402TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | 1.2A | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 3.05mm | 250mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | Not Qualified | 1 | Single | 540mW | 20V | 2.5 ns | 700mV | 540mW Ta | 1.2A | SWITCHING | 9.7 ns | SILICON | N-Channel | 250m Ω @ 930mA, 4.5V | 700mV @ 250μA | 110pF @ 15V | 3.9nC @ 4.5V | 9.5ns | 4.8 ns | 12V | 20V | 20V | 700 mV | 1.2A Ta | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6244TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | 27MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | FET General Purpose Power | 1 | Single | 1.3W | 4.9 ns | 900mV | 1.3W Ta | 18 ns | 6.3A | 150°C | SWITCHING | 19 ns | SILICON | N-Channel | 21m Ω @ 6.3A, 4.5V | 1.1V @ 10μA | 700pF @ 16V | 8.9nC @ 4.5V | 7.5ns | 12 ns | 12V | 20V | 12 V | 6.3A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML6302TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | -620mA | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 600mOhm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | Other Transistors | 1 | Single | 540mW | 20V | 13 ns | -1.5V | 540mW Ta | -780mA | SWITCHING | 22 ns | SILICON | P-Channel | 600m Ω @ 610mA, 4.5V | 1.5V @ 250μA | 97pF @ 15V | 3.6nC @ 4.45V | 18ns | 22 ns | 12V | -20V | -20V | -1.5 V | 0.78A | 780mA Ta | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
BCW61CE6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Tape & Reel (TR) | 2011 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 150°C TJ | e3 | Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BCW61 | YES | R-PDSO-G3 | Not Qualified | 330mW | 1 | SINGLE | PNP | SWITCHING | SILICON | PNP | 250MHz | 20nA ICBO | 32V | 100mA | 250 @ 2mA 5V | 550mV @ 1.25mA, 50mA | 250MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFN27E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | -200mA | No | 3 | TO-236-3, SC-59, SOT-23-3 | 100MHz | 900μm | 1.3mm | Surface Mount | 150°C TJ | -300V | e3 | DUAL | GULL WING | BFN27 | 360mW | 1 | Not Halogen Free | PNP | Single | 360mW | 300V | 200mA | 300V | 10V | SWITCHING | SILICON | PNP | 100MHz | 100nA ICBO | 500mV | 300V | 5V | 30 | 30 @ 30mA 10V | 500mV @ 2mA, 20mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBTA42LT1HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 500mA | 3 | TO-236-3, SC-59, SOT-23-3 | 70MHz | Surface Mount | 150°C TJ | 300V | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | MMBTA | 360mW | 1 | SINGLE | NPN | 360mW | 300V | 500mA | 300V | 300V | SILICON | NPN | 70MHz | 100nA ICBO | 300V | 6V | 40 @ 30mA 10V | 500mV @ 2mA, 20mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC847BL3E6327XTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | LOW NOISE | SC-101, SOT-883 | Surface Mount | 150°C TJ | e4 | Gold (Au) | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-XBCC-N3 | 250mW | 1 | SINGLE | COLLECTOR | NPN | AMPLIFIER | SILICON | NPN | 250MHz | 15nA ICBO | 45V | 100mA | 200 @ 2mA 5V | 600mV @ 5mA, 100mA | 250MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX41E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2001 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 150°C TJ | DUAL | GULL WING | BCX41 | YES | R-PDSO-G3 | Not Qualified | 330mW | 1 | SINGLE | NPN | SWITCHING | SILICON | NPN | 100MHz | 10μA | 125V | 800mA | 40 @ 200mA 1V | 900mV @ 30mA, 300mA | 100MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX6910H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | No | 3 | TO-243AA | 100MHz | Surface Mount | 150°C TJ | e3 | SINGLE | FLAT | 3W | 1 | SINGLE | COLLECTOR | PNP | 3W | 1A | 20V | 20V | AMPLIFIER | SILICON | PNP | 100MHz | 100nA ICBO | 1A | 25V | 5V | 85 @ 500mA 1V | 500mV @ 100mA, 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX6825H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | yes | Not For New Designs | 1 (Unlimited) | 3 | EAR99 | 4.5mm | ROHS3 Compliant | Tin | 3 | TO-243AA | 1.6mm | 2.5mm | Surface Mount | 150°C TJ | 100MHz | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | 3 | Other Transistors | 3W | 1 | SINGLE | COLLECTOR | NPN | 1A | 20V | 20V | AMPLIFIER | SILICON | NPN | 100MHz | 100nA ICBO | 500mV | 25V | 5V | 160 @ 500mA 1V | 500mV @ 100mA, 1A | 100MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCX5216H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | Not For New Designs | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-243AA | Surface Mount | 150°C TJ | Other Transistors | 2W | 2W | Single | PNP | 1A | 60V | 60V | PNP | 100nA ICBO | 60V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | 125MHz |
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