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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRF7509TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 8 | 3.048mm | ROHS3 Compliant | Lead Free | 2.7A | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 1.11mm | 3.048mm | 200mOhm | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | GULL WING | IRF7509PBF | 2 | 1.25W | 2 | N-CHANNEL AND P-CHANNEL | Dual | 1.25W | 1V | 2.7A | 150°C | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 19 ns | SILICON | N and P-Channel | 110m Ω @ 1.7A, 10V | 1V @ 250μA | 210pF @ 25V | 12nC @ 10V | 12ns | 9.3 ns | 20V | 30V | Logic Level Gate | 1 V | 2.7A 2A | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF7501TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 3mm | ROHS3 Compliant | Lead Free | 2.4A | No | 8 | ULTRA LOW RESISTANCE | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | No SVHC | 860μm | 3mm | 135mOhm | Surface Mount | -55°C~150°C TJ | 20V | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | IRF7501PBF | 1.25W | 2 | Dual | 1.25W | 5.7 ns | 700mV | 2.4A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 15 ns | SILICON | 2 N-Channel (Dual) | 135m Ω @ 1.7A, 4.5V | 700mV @ 250μA | 260pF @ 15V | 8nC @ 4.5V | 24ns | 16 ns | 12V | 20V | Logic Level Gate | 700 mV | 19A | |||||||||||||||||||||||||||||||||||||||||||||
| BSC0924NDIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N6 | 1W | 2 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | 32A | 0.007Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 N-Channel (Dual) Asymmetrical | 5m Ω @ 20A, 10V | 2V @ 250μA | 1160pF @ 15V | 10nC @ 4.5V | 20V | Logic Level Gate, 4.5V Drive | 1.3A | 17A 32A | 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0910NDIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | yes | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-N6 | 1W | 2 | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | Halogen Free | 31A | SWITCHING | 0.0059Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 N-Channel (Dual) Asymmetrical | 4.6m Ω @ 25A, 10V | 2V @ 250μA | 4500pF @ 12V | 6.6nC @ 4.5V | 20V | Logic Level Gate, 4.5V Drive | 11A | 11A 31A | 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO211PHXUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | ROHS3 Compliant | Lead Free | 8 | LOGIC LEVEL COMPATIBLE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 540.001716mg | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BSO211 | 8 | Not Qualified | 1.6W | 2 | Halogen Free | 1.6W | -20V | 4A | 0.067Ohm | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 P-Channel (Dual) | 67m Ω @ 4.6A, 4.5V | 1.2V @ 25μA | 1095pF @ 15V | 10nC @ 4.5V | 13ns | 12V | Logic Level Gate | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70R360P7SAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | yes | Active | 3 (168 Hours) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 59.4W Tc | N-Channel | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 517pF @ 400V | 16.4nC @ 10V | 12.5A Tc | 700V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC076N06NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Active | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Halogen Free | 2.5W | 15 ns | 60V | 6.2mOhm | PG-TDSON-8-5 | 2.5W Ta 69W Tc | 50A | 20 ns | N-Channel | 7.6mOhm @ 50A, 10V | 4V @ 35μA | 4000pF @ 30V | 50nC @ 10V | 40ns | 5 ns | 20V | 50A Tc | 60V | 4nF | 10V | ±20V | 7.6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD180N10N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | OptiMOS™ | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 71W Tc | SWITCHING | 0.018Ohm | 100V | SILICON | N-Channel | 18m Ω @ 33A, 10V | 3.5V @ 33μA | 1800pF @ 50V | 25nC @ 10V | 43A | 43A Tc | 100V | 172A | 50 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC066N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 60V | 2.5W Ta 46W Tc | 64A | SWITCHING | 0.0066Ohm | SILICON | N-Channel | 6.6m Ω @ 50A, 10V | 3.3V @ 20μA | 1500pF @ 30V | 21nC @ 10V | 3ns | 20V | 15A | 64A Tc | 256A | 21 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3103TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | 52A | No | 3 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 19mOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 69W | 9 ns | 1V | 107W Tc | 46A | SWITCHING | 20 ns | SILICON | N-Channel | 19m Ω @ 33A, 10V | 1V @ 250μA | 1600pF @ 25V | 50nC @ 4.5V | 210ns | 54 ns | 16V | 30V | 20A | 55A Tc | 220A | 240 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| IPD60N10S4L12ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 4 ns | 100V | 94W Tc | 60A | 20 ns | SILICON | N-Channel | 12m Ω @ 60A, 10V | 2.1V @ 46μA | 3170pF @ 25V | 49nC @ 10V | 3ns | 21 ns | 16V | 100V | 60A Tc | 240A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7440TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W | 11 ns | 3V | 140W Tc | 180A | 175°C | SWITCHING | 0.0024Ohm | 51 ns | SILICON | N-Channel | 2.4m Ω @ 90A, 10V | 3.9V @ 100μA | 4610pF @ 25V | 134nC @ 10V | 39ns | 34 ns | 20V | 40V | 3 V | 90A | 90A Tc | 760A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF7815TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 43MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 8.4 ns | 2.5W Ta | 5.1A | SWITCHING | 14 ns | SILICON | N-Channel | 43m Ω @ 3.1A, 10V | 5V @ 100μA | 1647pF @ 75V | 38nC @ 10V | 3.2ns | 8.3 ns | 20V | 150V | 5.1A Ta | 529 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSL214NH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | ROHS3 Compliant | Lead Free | 6 | AVALANCHE RATED | SOT-23-6 Thin, TSOT-23-6 | Surface Mount | -55°C~150°C TJ | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 500mW | 500mW | 2 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | Halogen Free | 20V | 1.5A | 0.14Ohm | METAL-OXIDE SEMICONDUCTOR | SILICON | 2 N-Channel (Dual) | 140m Ω @ 1.5A, 4.5V | 1.2V @ 3.7μA | 143pF @ 10V | 0.8nC @ 5V | 7.6ns | 12V | Logic Level Gate, 2.5V Drive | 9 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC70N04S54R6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 50W Tc | 0.0057Ohm | 40V | SILICON | N-Channel | 4.6m Ω @ 35A, 10V | 3.4V @ 17μA | 1430pF @ 25V | 24.2nC @ 10V | 70A | 70A Tc | 40V | 280A | 32 mJ | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2001 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 49A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | 17.5MOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 110W | 12 ns | 4V | 3.8W Ta 94W Tc | 49A | SWITCHING | 44 ns | SILICON | N-Channel | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 1470pF @ 25V | 63nC @ 10V | 60ns | 45 ns | 20V | 55V | 55V | 4 V | 49A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC036NE7NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Cut Tape (CT) | 2002 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 14 ns | 75V | 2.5W Ta 156W Tc | 20A | SWITCHING | 0.0036Ohm | 38 ns | SILICON | N-Channel | 3.6m Ω @ 50A, 10V | 3.8V @ 110μA | 4400pF @ 37.5V | 63.4nC @ 10V | 18ns | 10 ns | 20V | 100A Tc | 400A | 260 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLB8743PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.826mm | 8.7MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | TO-220AB | DRAIN | Single | 140W | 23 ns | 1.8V | 140W Tc | 44 ns | 150A | SWITCHING | 25 ns | SILICON | N-Channel | 3.2m Ω @ 40A, 10V | 2.35V @ 100μA | 5110pF @ 15V | 54nC @ 4.5V | 92ns | 36 ns | 20V | 30V | 30V | 1.8 V | 78A | 78A Tc | 620A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF1010EZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 75A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 8.5MOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 140W | 19 ns | 4V | 140W Tc | 75A | SWITCHING | 38 ns | SILICON | N-Channel | 8.5m Ω @ 51A, 10V | 4V @ 100μA | 2810pF @ 25V | 86nC @ 10V | 90ns | 54 ns | 20V | 60V | 60V | 4 V | 75A Tc | 99 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF3708PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2000 | HEXFET® | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 62A | No | 3 | TO-220-3 | No SVHC | 8.763mm | 4.69mm | 12MOhm | Through Hole | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 87W | 7.2 ns | 2V | 87W Tc | 65 ns | 62A | SWITCHING | 17.6 ns | SILICON | N-Channel | 12m Ω @ 15A, 10V | 2V @ 250μA | 2417pF @ 15V | 24nC @ 4.5V | 50ns | 3.7 ns | 12V | 30V | 30V | 2 V | 62A Tc | 248A | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRFU3607PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.3876mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 16 ns | 4V | 140W Tc | 50 ns | 56A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 75V | 75V | 4 V | 80A | 56A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR3410TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | 31A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 39MOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 12 ns | 4V | 3W Ta 110W Tc | 31A | SWITCHING | 40 ns | SILICON | N-Channel | 39m Ω @ 18A, 10V | 4V @ 250μA | 1690pF @ 25V | 56nC @ 10V | 27ns | 13 ns | 20V | 100V | 100V | 4 V | 31A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFB4020PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.02mm | 4.82mm | 100MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 100mW | 7.8 ns | 4.9V | 100W Tc | 120 ns | 18A | AMPLIFIER | 16 ns | SILICON | N-Channel | 100m Ω @ 11A, 10V | 4.9V @ 100μA | 1200pF @ 50V | 29nC @ 10V | 12ns | 6.3 ns | 20V | 200V | 200V | 4.9 V | 18A Tc | 52A | 94 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPB60R199CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 139W | 10 ns | 600V | 139W Tc | 16A | SWITCHING | 50 ns | SILICON | N-Channel | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 1520pF @ 100V | 43nC @ 10V | 5ns | 20V | 16A Tc | 650V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLS3036TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.652mm | 1.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 66 ns | 2.5V | 380W Tc | 270A | SWITCHING | 110 ns | SILICON | N-Channel | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 11210pF @ 50V | 140nC @ 4.5V | 220ns | 110 ns | 16V | 60V | 2.5 V | 195A Tc | 290 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFS3004TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.652mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 380W | 23 ns | 380W Tc | 240A | SWITCHING | 90 ns | SILICON | N-Channel | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 9200pF @ 25V | 240nC @ 10V | 220ns | 130 ns | 20V | 40V | 195A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRL40SC209 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G6 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 375W Tc | SWITCHING | 0.0008Ohm | 40V | SILICON | N-Channel | 0.8m Ω @ 100A, 10V | 2.4V @ 250μA | 15270pF @ 25V | 267nC @ 4.5V | 300A | 478A Tc | 40V | 1200A | 1404 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB38N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 38A | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 54Ohm | Through Hole | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 320W | 16 ns | 5V | 3.8W Ta 300W Tc | 240 ns | 44A | SWITCHING | 29 ns | SILICON | N-Channel | 54m Ω @ 26A, 10V | 5V @ 250μA | 2900pF @ 25V | 91nC @ 10V | 95ns | 47 ns | 30V | 200V | 200V | 5 V | 43A Tc | 460 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ24NS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | DUAL | GULL WING | 260 | 30 | R-PDSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 3.8W | 4.9 ns | 4V | 3.8W Ta 45W Tc | 17A | SWITCHING | 0.07Ohm | 19 ns | SILICON | N-Channel | 70m Ω @ 10A, 10V | 4V @ 250μA | 370pF @ 25V | 20nC @ 10V | 34ns | 27 ns | 20V | 55V | 17A Tc | 68A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL40B209 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | 16.51mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | Single | 56 ns | 2.4V | 375W Tc | 195A | 188 ns | N-Channel | 1.25m Ω @ 100A, 10V | 2.4V @ 250μA | 15140pF @ 25V | 270nC @ 4.5V | 20V | 195A Tc | 40V | 4.5V 10V | ±20V |