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Infineon Technologies(12661)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Frequency | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Number of Elements | Configuration | JEDEC-95 Code | Polarity | Case Connection | Halogen Free | Polarity/Channel Type | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Transistor Type | Input Capacitance | Transition Frequency | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Collector Base Voltage (VCBO) | Emitter Base Voltage (VEBO) | hFE Min | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BC 807-25 E6433 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2007 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | BC807 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | PNP | 0.33W | SILICON | PNP | 200MHz | 100nA ICBO | 45V | 500mA | 160 @ 100mA 1V | 700mV @ 50mA, 500mA | 200MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP51E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | no | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | 125MHz | Surface Mount | 150°C TJ | DUAL | GULL WING | BCP51 | Other Transistors | 2W | 1 | SINGLE | COLLECTOR | PNP | 2W | 1A | 45V | 500mV | SWITCHING | SILICON | PNP | 125MHz | 100nA ICBO | 1A | 45V | 5V | 40 @ 150mA 2V | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC 817-25W E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | SC-70, SOT-323 | unknown | Surface Mount | 150°C TJ | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | BC817 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 250mW | 1 | SINGLE | NPN | 0.25W | SILICON | NPN | 170MHz | 100nA ICBO | 45V | 500mA | 160 @ 100mA 1V | 700mV @ 50mA, 500mA | 170MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP5116E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | BCP51 | 2W | 2W | 1A | 45V | 500mV | PNP | 100nA ICBO | 45V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | 125MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP49E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2007 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | DUAL | GULL WING | BCP49 | 1.5W | 1.5W | 1 | NPN | COLLECTOR | 500mA | 60V | 60V | SILICON | NPN - Darlington | 200MHz | 100nA ICBO | 1V | 80V | 10V | 10000 | 10000 @ 100mA 5V | 1V @ 100μA, 100mA | 200MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PZTA14E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | DUAL | GULL WING | PZTA14 | 1.5W | 1.5W | 1 | NPN | COLLECTOR | 300mA | 30V | 1.5V | AMPLIFIER | SILICON | NPN - Darlington | 125MHz | 100nA ICBO | 1.5V | 30V | 10V | 20000 | 20000 @ 100mA 5V | 1.5V @ 100μA, 100mA | 125MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC 817-40 E6433 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | DUAL | GULL WING | 260 | NOT SPECIFIED | BC817 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | NPN | 0.33W | SILICON | NPN | 170MHz | 100nA ICBO | 45V | 500mA | 250 @ 100mA 1V | 700mV @ 50mA, 500mA | 170MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP5116E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | Obsolete | 1 (Unlimited) | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | 125MHz | Surface Mount | 150°C TJ | BCP51 | 2W | 1 | 2W | 1A | 45V | 45V | PNP | 100nA ICBO | 1A | 45V | 5V | 100 @ 150mA 2V | 500mV @ 50mA, 500mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC860BWE6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | LOW NOISE | SC-70, SOT-323 | unknown | Surface Mount | 150°C TJ | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | BC860 | R-PDSO-G3 | Not Qualified | 250mW | 250mW | 1 | SINGLE | PNP | 100mA | 45V | 650mV | SWITCHING | SILICON | PNP | 250MHz | 15nA ICBO | 220 @ 2mA 5V | 650mV @ 5mA, 100mA | 250MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCW 67A E6327 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | compliant | Surface Mount | 150°C TJ | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | BCW67 | YES | R-PDSO-G3 | Other Transistors | Not Qualified | 330mW | 1 | SINGLE | PNP | 0.33W | SILICON | PNP | 200MHz | 20nA ICBO | 32V | 800mA | 100 @ 100mA 1V | 700mV @ 50mA, 500mA | 200MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCP5310E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | 125MHz | Surface Mount | 150°C TJ | DUAL | GULL WING | BCP53 | Other Transistors | 2W | 1 | SINGLE | COLLECTOR | PNP | 2W | 1A | 80V | 500mV | AMPLIFIER | SILICON | PNP | 125MHz | 100nA ICBO | 1A | 100V | 5V | 63 @ 150mA 2V | 500mV @ 50mA, 500mA | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDP948E6433HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | 4 | TO-261-4, TO-261AA | 100MHz | Surface Mount | 150°C TJ | DUAL | GULL WING | BDP948 | 5W | 1 | SINGLE | COLLECTOR | PNP | 5W | 3A | 45V | 500mV | AMPLIFIER | SILICON | PNP | 100MHz | 100nA ICBO | 3A | 45V | 5V | 85 @ 500mA 1V | 500mV @ 200mA, 2A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC850CE6359HTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | Automotive, AEC-Q101 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 150°C TJ | 330mW | 330mW | SOT-23-3 | 100mA | 45V | 600mV | NPN | 15nA ICBO | 45V | 100mA | 420 @ 2mA 5V | 600mV @ 5mA, 100mA | 250MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCV47E6393HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | Automotive, AEC-Q101 | Last Time Buy | 1 (Unlimited) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 150°C TJ | 360mW | 360mW | SOT-23-3 | 500mA | 60V | 1V | NPN - Darlington | 100nA ICBO | 60V | 500mA | 10000 @ 100mA 5V | 1V @ 100μA, 100mA | 170MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BCX6816E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-243AA | compliant | Surface Mount | 150°C TJ | SINGLE | FLAT | NOT SPECIFIED | NOT SPECIFIED | BCX68 | YES | R-PSSO-F3 | Other Transistors | 3W | 1 | SINGLE | COLLECTOR | NPN | 3W | AMPLIFIER | SILICON | NPN | 100MHz | 100nA ICBO | 20V | 1A | 100 @ 500mA 1V | 500mV @ 100mA, 1A | 100MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP60E6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | yes | Obsolete | 1 (Unlimited) | 4 | EAR99 | RoHS Compliant | No | 4 | TO-261-4, TO-261AA | Surface Mount | 150°C TJ | DUAL | GULL WING | BSP60 | 4 | 1.5W | 1.5W | 1 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | PNP | COLLECTOR | 1A | 45V | 45V | SWITCHING | SILICON | PNP - Darlington | 200MHz | 10μA | 1.8V | 60V | 5V | 2000 | 2000 @ 500mA 10V | 1.8V @ 1mA, 1A | 200MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP2907PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 209A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 24.99mm | 5.3086mm | 4.5MOhm | Through Hole | -55°C~175°C TJ | 75V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | DRAIN | Single | 470W | 23 ns | 4V | 470W Tc | 210 ns | 209A | 175°C | SWITCHING | 130 ns | SILICON | N-Channel | 4.5m Ω @ 125A, 10V | 4V @ 250μA | 13000pF @ 25V | 620nC @ 10V | 190ns | 130 ns | 20V | 75V | 75V | 4 V | 90A | 209A Tc | 840A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N60C3XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | Not For New Designs | 1 (Unlimited) | Through Hole | 150°C | -55°C | 10mm | ROHS3 Compliant | Lead Free | Tin | 20.7A | 3 | TO-220-3 | No SVHC | 9.25mm | 4.4mm | Through Hole | 45.359237g | -55°C~150°C TJ | 650V | MOSFET (Metal Oxide) | Single | 208W | 10 ns | 3V | 190mOhm | PG-TO220-3-1 | 208W Tc | 20.7A | 67 ns | N-Channel | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 2400pF @ 25V | 114nC @ 10V | 5ns | 4.5 ns | 20V | 600V | 650V | 3 V | 20.7A Tc | 600V | 2.4nF | 10V | ±20V | 190 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4310ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | 6MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 280W | 20 ns | 4V | 280W Tc | 40 ns | 134A | SWITCHING | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 100V | 4 V | 120A Tc | 560A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8409-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Not For New Designs | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | IRFS8409 | 1 | FET General Purpose Power | Single | 375W | 32 ns | 3V | 375W Tc | 240A | 149 ns | N-Channel | 0.75m Ω @ 100A, 10V | 3.9V @ 250μA | 13975pF @ 25V | 460nC @ 10V | 148ns | 107 ns | 20V | 40V | 3 V | 240A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP110N20NAAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptimWatt™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 18 ns | 200V | 300W Tc | 88A | SWITCHING | 41 ns | SILICON | N-Channel | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 7100pF @ 100V | 87nC @ 10V | 26ns | 11 ns | 20V | 88A Tc | 560 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4568PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 24.99mm | 5.3086mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | 1 | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 517W | 27 ns | 5V | 517W Tc | 171A | 175°C | SWITCHING | 0.0059Ohm | 47 ns | SILICON | N-Channel | 5.9m Ω @ 103A, 10V | 5V @ 250μA | 10470pF @ 50V | 227nC @ 10V | 119ns | 84 ns | 30V | 150V | 150V | 5 V | 171A Tc | 684A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF100P218XKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | 24.99mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.8W | 50 ns | 556W Tc | 209A | 175°C | 170 ns | N-Channel | 1.28m Ω @ 100A, 10V | 3.8V @ 278μA | 25000pF @ 50V | 555nC @ 10V | 20V | 100V | 209A Tc | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPT012N08N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerSFN | No SVHC | not_compliant | 2.4mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-HSOF-8 | e3 | Tin (Sn) | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-F2 | 1 | 1 | DRAIN | Halogen Free | Single | 375W | 35 ns | 3V | 80V | 375W Tc | 300A | 175°C | SWITCHING | 82 ns | SILICON | N-Channel | 1.2m Ω @ 150A, 10V | 3.8V @ 280μA | 17000pF @ 40V | 223nC @ 10V | 31ns | 30 ns | 20V | 80V | 52A | 300A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF200P222 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tube | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 24.99mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | DRAIN | 556W | 25 ns | 556W Tc | 182A | 175°C | SWITCHING | 0.0066Ohm | 77 ns | SILICON | N-Channel | 6.6m Ω @ 82A, 10V | 4V @ 270μA | 9820pF @ 50V | 203nC @ 10V | 20V | 200V | 182A Tc | 728A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R031CFD7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ CFD7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 278W | 48 ns | 278W Tc | 63A | 150°C | SWITCHING | 175 ns | SILICON | N-Channel | 31m Ω @ 32.6A, 10V | 4.5V @ 1.63mA | 5623pF @ 400V | 141nC @ 10V | 20V | 600V | 63A Tc | 650V | 277A | 326 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW47N60C3FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Tube | 2005 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | ROHS3 Compliant | AVALANCHE RATED | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | 415W Tc | 0.07Ohm | 600V | SILICON | N-Channel | 70m Ω @ 30A, 10V | 3.9V @ 2.7mA | 6800pF @ 25V | 320nC @ 10V | 47A | 47A Tc | 650V | 141A | 1800 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R040C7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2015 | CoolMOS™ C7 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | Halogen Free | 600V | 227W Tc | 50A | SWITCHING | 0.04Ohm | SILICON | N-Channel | 40m Ω @ 24.9A, 10V | 4V @ 1.24mA | 4340pF @ 400V | 107nC @ 10V | 50A Tc | 211A | 249 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R037P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | 25.4mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 255W | 22 ns | 255W Tc | 76A | 150°C | SWITCHING | 0.037Ohm | 90 ns | SILICON | N-Channel | 37m Ω @ 29.5A, 10V | 4V @ 1.48mA | 5243pF @ 400V | 121nC @ 10V | 20V | 600V | 76A Tc | 650V | 280A | 295 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS4030TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.572mm | 9.65mm | 3.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | Single | 370W | 74 ns | 370W Tc | 180A | SWITCHING | 110 ns | SILICON | N-Channel | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 11360pF @ 50V | 130nC @ 4.5V | 330ns | 170 ns | 16V | 100V | 2.5 V | 180A Tc | 4.5V 10V | ±16V |