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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode Manufacturer Package Identifier JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPA041N04NGXKSA1 IPA041N04NGXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free 16 ns 40V 3.5mOhm PG-TO220-FP 35W Tc 70A 23 ns N-Channel 4.1mOhm @ 70A, 10V 4V @ 45μA 4500pF @ 20V 56nC @ 10V 3.8ns 4.8 ns 20V 70A Tc 40V 4.5nF 10V ±20V 4.1 mΩ
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB Single 99W 11 ns 3.7V 99W Tc 75A SWITCHING 32 ns SILICON N-Channel 7.3m Ω @ 45A, 10V 3.7V @ 100μA 3000pF @ 25V 87nC @ 10V 51ns 34 ns 20V 60V 75A Tc 6V 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2000 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 23A No 3 TO-220-3 No SVHC 15.24mm 4.69mm 90mOhm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 3.8W 10 ns 5.5V 3.8W Ta 136W Tc 23A SWITCHING 18 ns SILICON N-Channel 90m Ω @ 14A, 10V 5.5V @ 250μA 1200pF @ 25V 56nC @ 10V 32ns 8.4 ns 30V 150V 150V 5.5 V 23A Tc 92A 260 mJ 10V ±30V
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    		 download 18 Weeks Tube CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 24W Tc SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 3.8A, 10V 4V @ 190μA 761pF @ 400V 18nC @ 10V 12A Tc 600V 36A 38 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 150W 18 ns 80V 150W Tc 80A SWITCHING 0.0057Ohm 38 ns SILICON N-Channel 5.7m Ω @ 80A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 66ns 10 ns 20V 80A Tc 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 TO-220AB ISOLATED Single 294W 20 ns 3.7V 294W Tc 195A SWITCHING 0.0024Ohm 60V 118 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 3.7V @ 250μA 10034pF @ 25V 279nC @ 10V 134ns 93 ns 20V 195A Tc 60V 944A 775 mJ 6V 10V ±20V
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    		 download 18 Weeks Tube 2004 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 104W Tc 0.65Ohm 800V SILICON N-Channel 650m Ω @ 5.1A, 10V 3.9V @ 470μA 1100pF @ 100V 60nC @ 10V 8A 8A Tc 800V 24A 340 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2000 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free Tin 24A No 3 TO-220-3 No SVHC 4.69mm 4.699mm 100MOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 170W 14 ns 5.5V 3.8W Ta 170W Tc 24A SWITCHING 26 ns SILICON N-Channel 100m Ω @ 14A, 10V 5.5V @ 250μA 1960pF @ 25V 86nC @ 10V 32ns 16 ns 30V 200V 200V 5.5 V 24A Tc 96A 250 mJ 10V ±30V
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    		 download 14 Weeks Through Hole Tube 2003 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free Tin 250A No 3 AVALANCHE RATED TO-220-3 No SVHC 9.017mm 4.82mm 3mOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 16 ns 2.5V 330W Tc 260A SWITCHING 40 ns SILICON N-Channel 3m Ω @ 38A, 10V 2.5V @ 250μA 5890pF @ 15V 110nC @ 4.5V 160ns 57 ns 20V 30V 30V 2.5 V 75A 260A Tc 4.5V 10V ±20V
    IPA65R280E6XKSA1 IPA65R280E6XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2010 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 11 ns 650V 32W Tc 13.8A SWITCHING 0.28Ohm 76 ns SILICON N-Channel 280m Ω @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 9ns 20V 13.8A Tc 290 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ P6 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 15 ns 600V 34W Tc 20.2A SWITCHING 0.19Ohm 45 ns SILICON N-Channel 190m Ω @ 7.6A, 10V 4.5V @ 630μ 1750pF @ 100V 37nC @ 10V 8ns 7 ns 20V 20.2A Tc 57A 419 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2009 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 16.51mm 4.826mm 3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 19 ns 300W Tc 210A SWITCHING 55 ns SILICON N-Channel 3m Ω @ 75A, 10V 4V @ 150μA 6540pF @ 50V 170nC @ 10V 82ns 83 ns 20V 60V 120A 120A Tc 840A 170 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 1999 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 650V 31W Tc SWITCHING 0.4Ohm SILICON N-Channel 400m Ω @ 3.2A, 10V 3.5V @ 320μA 710pF @ 100V 39nC @ 10V Super Junction 30A 215 mJ 10V ±20V
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    		 download 13 Weeks Surface Mount Cut Tape (CT) 2013 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant 4.82mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 300W 13 ns 3V 200V 300W Tc 84A 175°C 24 ns SILICON N-Channel 11.7m Ω @ 84A, 10V 4V @ 270μA 6650pF @ 100V 87nC @ 10V 10ns 8 ns 20V 200V 84A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Cut Tape (CT) 2008 CoolMOS™ no Discontinued 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 10.6 ns 650V 278W Tc 38A SWITCHING 0.099Ohm 77 ns SILICON N-Channel 99m Ω @ 12.8A, 10V 3.5V @ 1.2mA 2780pF @ 100V 127nC @ 10V 9ns 6 ns 20V 38A Tc 115A 845 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant DirectFET™ Isometric L8 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3.8W Ta 340W Tc 545A N-Channel 0.6m Ω @ 195A, 10V 3.9V @ 250μA 17890pF @ 25V 562nC @ 10V 57A Ta 545A Tc 40V 10V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 9 EAR99 ROHS3 Compliant Lead Free No 15 HIGH RELIABILITY DirectFET™ Isometric L8 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM R-XBCC-N9 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 100W 15 ns 3.3W Ta 100W Tc 114A SWITCHING 0.0044Ohm 27 ns SILICON N-Channel 4.4m Ω @ 68A, 10V 5V @ 250μA 5660pF @ 25V 120nC @ 10V 30ns 14 ns 20V 100V 375A 19A Ta 114A Tc 460A 850 mJ 10V ±20V
    IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 Infineon Technologies $0.00
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    		 download 20 Weeks Tape & Reel (TR) 2016 OptiMOS™ Active 1 (Unlimited) ROHS3 Compliant 8-PowerSFN 2.4mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) PG-HSOF-8 NOT SPECIFIED NOT SPECIFIED 1 375W 31 ns 375W Tc 300A 175°C 69 ns N-Channel 1.2m Ω @ 100A, 10V 3.8V @ 275μA 16250pF @ 40V 231nC @ 10V 20V 80V 300A Tc 6V 10V ±20V
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    		 download 13 Weeks Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant TO-263-8, D2Pak (7 Leads + Tab), TO-263CA not_compliant 4.5mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G6 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W 19 ns 300W Tc 174A 175°C SWITCHING 0.0044Ohm 24 ns SILICON N-Channel 4.4m Ω @ 87A, 10V 4.6V @ 264μA 8000pF @ 75V 100nC @ 10V 20V 150V 174A Tc 696A 470 mJ 8V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ C7 yes Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 14 ns 650V 169W Tc 28A SWITCHING 0.07Ohm 92 ns SILICON N-Channel 70m Ω @ 8.5A, 10V 4V @ 850μA 3020pF @ 100V 64nC @ 10V 6ns 11 ns 20V 28A Tc 171 mJ 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) CoolMOS™ G7 Active 1 (Unlimited) 10 ROHS3 Compliant 10-PowerSOP Module 2.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING YES 1 1 SINGLE WITH BUILT-IN DIODE TO-252 278W 22 ns 278W Tc 47A 150°C SWITCHING 0.05Ohm 72 ns SILICON N-Channel 50m Ω @ 15.9A, 10V 4V @ 800μA 2670pF @ 400V 68nC @ 10V 20V 600V 47A Tc 10V ±20V
    IGT60R190D1SATMA1 IGT60R190D1SATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) CoolGaN™ Active 1 (Unlimited) ROHS3 Compliant 8-PowerSFN Surface Mount -55°C~150°C TJ GaNFET (Gallium Nitride) 55.5W Tc N-Channel 1.6V @ 960μA 157pF @ 400V 12.5A Tc 600V -10V
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    		 download 13 Weeks Through Hole Tube 2011 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 FET General Purpose Power 1 TO-220AB Halogen Free Single 214W 23 ns 80V 214W Tc 100A SWITCHING 45 ns SILICON N-Channel 3.75m Ω @ 100A, 10V 3.5V @ 155μA 8110pF @ 40V 117nC @ 10V 79ns 14 ns 20V 80V 100A Tc 400A 6V 10V ±20V
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    		 download 19 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 90A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 20.7mm 5.3086mm 4.5Ohm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 310W 19 ns 4V 310W Tc 61 ns 90A SWITCHING 97 ns SILICON N-Channel 4.5m Ω @ 90A, 10V 4V @ 250μA 7500pF @ 25V 270nC @ 10V 140ns 100 ns 20V 75V 75V 4 V 170A 90A Tc 680A 690 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2007 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 94W 10 ns 40V 94W Tc 80A SWITCHING 0.0052Ohm 38 ns SILICON N-Channel 3.9m Ω @ 80A, 10V 2V @ 45μA 6100pF @ 25V 78nC @ 10V 5.4ns 6 ns 20V 80A Tc 400A 60 mJ 4.5V 10V ±20V
    IRF2807PBF IRF2807PBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free Tin 82A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 13mOhm Through Hole -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 230W 13 ns 4V 230W Tc 150 ns 82A SWITCHING 49 ns SILICON N-Channel 13m Ω @ 43A, 10V 4V @ 250μA 3820pF @ 25V 160nC @ 10V 64ns 48 ns 20V 75V 75V 4 V 75A 82A Tc 280A 10V ±20V
    BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant 1.1mm Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 1 DRAIN Halogen Free Single 139W 13 ns 100V 2.5W Ta 139W Tc 100A 150°C SWITCHING 0.004Ohm 32 ns SILICON N-Channel 4m Ω @ 50A, 10V 3.8V @ 95μA 5300pF @ 50V 72nC @ 10V 9ns 10 ns 20V 100V 100A Tc 400A 200 mJ 6V 10V ±20V
    IRFS7434TRLPBF IRFS7434TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 1 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 294W 24 ns 294W Tc 195A SWITCHING 40V 115 ns SILICON N-Channel 1.6m Ω @ 100A, 10V 3.9V @ 250μA 10820pF @ 25V 324nC @ 10V 68ns 68 ns 20V 195A Tc 40V 780A 6V 10V ±20V
    IPB011N04NGATMA1 IPB011N04NGATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead No 7 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 7 R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 250W 40 ns 40V 250W Tc 180A SWITCHING 63 ns SILICON N-Channel 1.1m Ω @ 100A, 10V 4V @ 200μA 20000pF @ 20V 250nC @ 10V 10ns 13 ns 20V 180A Tc 10V ±20V
    BSC670N25NSFDATMA1 BSC670N25NSFDATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant 8-PowerTDFN not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED YES R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc SWITCHING 0.067Ohm 250V SILICON N-Channel 67m Ω @ 24A, 10V 4V @ 90μA 2410pF @ 125V 30nC @ 10V 24A 24A Tc 250V 96A 69 mJ 10V ±20V