All Products
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Connectors
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Capacitors
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RF/IF & RFID
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- Filters
Vishay Siliconix(2369)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHA21N60EF-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 35W Tc | 21A | SWITCHING | 0.176Ohm | 600V | SILICON | N-Channel | 176m Ω @ 11A, 10V | 4V @ 250μA | 2030pF @ 100V | 84nC @ 10V | 21A Tc | 600V | 53A | 367 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG17N60D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2012 | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | No | 3 | TO-247-3 | Unknown | 20.82mm | 5.31mm | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-247AC | DRAIN | Single | 22 ns | 3V | 277.8W Tc | 17A | SWITCHING | 600V | 37 ns | SILICON | N-Channel | 340m Ω @ 8A, 10V | 5V @ 250μA | 1780pF @ 100V | 90nC @ 10V | 56ns | 30 ns | 30V | 17A Tc | 600V | 48A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRLD024 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | Obsolete | 1 (Unlimited) | 150°C | -55°C | 5mm | Non-RoHS Compliant | Contains Lead | 2.5A | 4 | 4-DIP (0.300, 7.62mm) | 3.37mm | 6.29mm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | 1 | 1 | 1.3W | 11 ns | 100mOhm | 4-DIP, Hexdip, HVMDIP | 1.3W Ta | 2.5A | 23 ns | N-Channel | 100mOhm @ 1.5A, 5V | 2V @ 250μA | 870pF @ 25V | 18nC @ 5V | 110ns | 110 ns | 10V | 60V | 2.5A Ta | 60V | 870pF | 4V 5V | ±10V | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| SI7430DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 45mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 5.2W | 16 ns | 2.5V | 5.2W Ta 64W Tc | 26A | SWITCHING | 20 ns | SILICON | N-Channel | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 1735pF @ 50V | 43nC @ 10V | 12ns | 7 ns | 20V | 150V | 7.2A | 26A Tc | 50A | 20 mJ | 8V 10V | ±20V | ||||||||||||||||||||||||||||
| SIR890DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | Unknown | 1.04mm | 5.89mm | 2.9mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | R-PDSO-C5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 5W | 30 ns | 2.6V | 5W Ta 50W Tc | 50A | SWITCHING | 40 ns | SILICON | N-Channel | 2.9m Ω @ 10A, 10V | 2.6V @ 250μA | 2747pF @ 10V | 60nC @ 10V | 18ns | 25 ns | 20V | 20V | 30A | 50A Tc | 70A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRF614PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2007 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 36W | 7 ns | 4V | 2Ohm | TO-220AB | 36W Tc | 2.7A | 16 ns | N-Channel | 2Ohm @ 1.6A, 10V | 4V @ 250μA | 140pF @ 25V | 8.2nC @ 10V | 7.6ns | 7 ns | 20V | 4 V | 2.7A Tc | 250V | 140pF | 10V | ±20V | 2 Ω | ||||||||||||||||||||||||||||||||||||||||||
| SI5429DU-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2013 | TrenchFET® | Discontinued | 1 (Unlimited) | EAR99 | 150°C | -55°C | 3.08mm | ROHS3 Compliant | No | 8 | PowerPAK® ChipFET™ Dual | No SVHC | 850μm | 1.98mm | Surface Mount | MOSFET (Metal Oxide) | 31W | 1 | Single | 31W | 35 ns | -1V | 12A | 60 ns | P-Channel | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 2320pF @ 15V | 63nC @ 10V | 50ns | 20 ns | 20V | -30V | 12A Tc | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60S-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | 2 | 150°C | -55°C | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 190mOhm | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 260 | 40 | 4 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 250W | 24 ns | 2V | 250W Tc | 22A | SWITCHING | 77 ns | N-Channel | 190m Ω @ 11A, 10V | 4V @ 250μA | 2810pF @ 25V | 110nC @ 10V | 68ns | 59 ns | 20V | 600V | 22A Tc | 65A | 690 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHF22N60S-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2013 | yes | Obsolete | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Unknown | 190mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 250W | 24 ns | 2V | 250W Tc | 22A | SWITCHING | 77 ns | SILICON | N-Channel | 190m Ω @ 11A, 10V | 4V @ 250μA | 2810pF @ 25V | 110nC @ 10V | 68ns | 59 ns | 20V | 600V | 22A Tc | 65A | 690 mJ | ||||||||||||||||||||||||||||||||||||||||
| SUM110N04-2M1P-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 2.1mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | Single | 312W | 102 ns | 1.2V | 3.13W Ta 312W Tc | 11A | SWITCHING | 180 ns | SILICON | N-Channel | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 18800pF @ 20V | 360nC @ 10V | 62ns | 60 ns | 20V | 40V | 29A Ta 110A Tc | 250A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SUM90N04-3M3P-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3.3mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | Single | 3.1W | 11 ns | 3.1W Ta 125W Tc | 90A | SWITCHING | 45 ns | SILICON | N-Channel | 3.3m Ω @ 22A, 10V | 2.5V @ 250μA | 5286pF @ 20V | 131nC @ 10V | 7ns | 7 ns | 20V | 40V | 90A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4410BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.55mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 8 | 1 | FET General Purpose Powers | 1 | Single | 1.4W | 10 ns | 1V | 1.4W Ta | 10A | SWITCHING | 40 ns | SILICON | N-Channel | 13.5m Ω @ 10A, 10V | 3V @ 250μA | 20nC @ 5V | 10ns | 15 ns | 20V | 30V | 7.5A | 7.5A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SIB404DK-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 24 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-75-6L | Unknown | 19mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 6 | S-PDSO-C3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W | 5 ns | 350mV | 2.5W Ta 13W Tc | 9A | SWITCHING | 20 ns | SILICON | N-Channel | 19m Ω @ 3A, 4.5V | 800mV @ 250μA | 15nC @ 4.5V | 40ns | 20 ns | 5V | 9A | 9A Tc | 12V | 35A | 4.5V | ±5V | ||||||||||||||||||||||||||||||||||
| IRFBC40ASPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | 1.2Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 13 ns | 1.2Ohm | D2PAK | 125W Tc | 6.2A | 31 ns | N-Channel | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 1036pF @ 25V | 42nC @ 10V | 23ns | 18 ns | 30V | 600V | 4 V | 6.2A Tc | 600V | 1.036nF | 10V | ±30V | 1.2 Ω | |||||||||||||||||||||||||||||||||||||||||
| SIHG44N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Tube | E | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NO | R-PSFM-T3 | 1 | TO-247AC | 417W Tc | SWITCHING | 0.073Ohm | 650V | SILICON | N-Channel | 73m Ω @ 22A, 10V | 4V @ 250μA | 5892pF @ 100V | 278nC @ 10V | 46A | 46A Tc | 650V | 154A | 596 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG70N60AEF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 21 Weeks | Tube | EF | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-247-3 | 24.99mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | 417W | 45 ns | 417W Tc | 60A | 150°C | 219 ns | N-Channel | 41m Ω @ 35A, 10V | 4V @ 250μA | 5348pF @ 100V | 410nC @ 10V | 20V | 600V | 60A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 170W | 14 ns | 4V | 520mOhm | D2PAK | 170W Tc | 11A | 32 ns | N-Channel | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 1423pF @ 25V | 52nC @ 10V | 35ns | 28 ns | 30V | 11A Tc | 500V | 1.423nF | 10V | ±30V | 520 mΩ | |||||||||||||||||||||||||||||||||||||||||||
| SIHB23N60E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | Single | 22 ns | 227W Tc | 23A | SWITCHING | 600V | 66 ns | SILICON | N-Channel | 158m Ω @ 12A, 10V | 4V @ 250μA | 2418pF @ 100V | 95nC @ 10V | 38ns | 34 ns | 20V | 23A Tc | 600V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG16N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2007 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-247-3 | Unknown | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-247AC | Single | 250W | 27 ns | 3V | 250W Tc | 16A | SWITCHING | 29 ns | SILICON | N-Channel | 380m Ω @ 8A, 10V | 5V @ 250μA | 1900pF @ 25V | 68nC @ 10V | 156ns | 31 ns | 30V | 500V | 16A Tc | 40A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SIHP21N65EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 22 ns | 208W Tc | 21A | SWITCHING | 68 ns | SILICON | N-Channel | 180m Ω @ 11A, 10V | 4V @ 250μA | 2322pF @ 100V | 106nC @ 10V | 34ns | 68 ns | 20V | 700V | 21A Tc | 650V | 55A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHF12N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Cut Tape (CT) | 2016 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | AVALANCHE RATED | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 18 ns | 36W Tc | 12A | SWITCHING | 0.555Ohm | 500V | 23 ns | SILICON | N-Channel | 555m Ω @ 4A, 10V | 5V @ 250μA | 1375pF @ 25V | 48nC @ 10V | 35ns | 6 ns | 30V | 12A Tc | 500V | 28A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFB18N50KPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | Through Hole | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 18A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 290mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 200W | 22 ns | 5V | 290mOhm | TO-220AB | 220W Tc | 17A | 45 ns | N-Channel | 290mOhm @ 10A, 10V | 5V @ 250μA | 2830pF @ 25V | 120nC @ 10V | 60ns | 30 ns | 30V | 500V | 500V | 5 V | 17A Tc | 500V | 2.83nF | 10V | ±30V | 290 mΩ | |||||||||||||||||||||||||||||||||||
| SIHH21N60E-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | Lead Free | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PSSO-N4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 104W Tc | 20A | SWITCHING | 0.176Ohm | 600V | SILICON | N-Channel | 176m Ω @ 11A, 10V | 4V @ 250μA | 2015pF @ 100V | 83nC @ 10V | 20A Tc | 600V | 226 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9010PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2010 | Active | 1 (Unlimited) | 150°C | -55°C | 6.2738mm | ROHS3 Compliant | Lead Free | -1.1A | No | 4 | 4-DIP (0.300, 7.62mm) | Unknown | 3.3782mm | 5.0038mm | Through Hole | -55°C~150°C TJ | -50V | MOSFET (Metal Oxide) | Single | 1W | 6.1 ns | -4V | 350mOhm | 4-DIP, Hexdip, HVMDIP | 1W Tc | -1.1A | 13 ns | P-Channel | 500mOhm @ 580mA, 10V | 4V @ 250μA | 240pF @ 25V | 11nC @ 10V | 47ns | 39 ns | 20V | 50V | 1.1A Tc | 50V | 240pF | 10V | ±20V | 500 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| IRFU9024PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 280mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) - annealed | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 13 ns | -4V | 2.5W Ta 42W Tc | 8.8A | SWITCHING | 15 ns | SILICON | P-Channel | 280m Ω @ 5.3A, 10V | 4V @ 250μA | 570pF @ 25V | 19nC @ 10V | 68ns | 29 ns | 20V | -60V | 8.8A Tc | 60V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFU9014PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | 500mOhm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 9.65mm | e3 | Matte Tin (Sn) | 260 | 40 | 3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 11 ns | -4V | 2.5W Ta 25W Tc | 5.1A | SWITCHING | 9.6 ns | SILICON | P-Channel | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 31 ns | 20V | -60V | -4 V | 5.1A Tc | 60V | 20A | 10V | ±20V | |||||||||||||||||||||||||||||
| SI7370DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | No SVHC | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 16 ns | 4V | 1.9W Ta | 9.6A | SWITCHING | 50 ns | SILICON | N-Channel | 11m Ω @ 12A, 10V | 4V @ 250μA | 57nC @ 10V | 12ns | 30 ns | 20V | 60V | 9.6A Ta | 50A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIUD403ED-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | TrenchFET® Gen III | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | PowerPAK® 0806 | unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.25W Ta | SWITCHING | 20V | SILICON | P-Channel | 1.25 Ω @ 300mA, 4.5V | 900mV @ 250μA | 31pF @ 10V | 1nC @ 4.5V | 500mA Ta | 20V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | Through Hole | 38.000013g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 1 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | DRAIN | 312W | 21 ns | 312W Tc | 22A | SWITCHING | 500V | 47 ns | SILICON | N-Channel | 230m Ω @ 11A, 10V | 5V @ 250μA | 1938pF @ 100V | 98nC @ 10V | 42ns | 40 ns | 30V | 22A Tc | 500V | 67A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF740SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tube | 2006 | Active | 1 (Unlimited) | 150°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 550mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | 1 | 1 | Single | 125W | 14 ns | 4V | 550mOhm | D2PAK | 3.1W Ta 125W Tc | 10A | 50 ns | N-Channel | 550mOhm @ 6A, 10V | 4V @ 250μA | 1400pF @ 25V | 63nC @ 10V | 27ns | 24 ns | 20V | 400V | 10A Tc | 400V | 1.4nF | 10V | ±20V | 550 mΩ |