Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SI4431CDY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 38 ns | 4.2W Tc | 7A | SWITCHING | 0.032Ohm | 30V | 22 ns | SILICON | P-Channel | 32m Ω @ 7A, 10V | 2.5V @ 250μA | 1006pF @ 15V | 38nC @ 10V | 89ns | 11 ns | 20V | 7A | 9A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
SQJ418EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 0.014Ohm | 100V | SILICON | N-Channel | 14m Ω @ 10A, 10V | 3.5V @ 250μA | 1700pF @ 25V | 35nC @ 10V | 48A | 48A Tc | 100V | 160A | 65 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
SI4628DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2013 | SkyFET®, TrenchFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.55mm | 4mm | 3mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | 7.8W | 28 ns | 1V | 2.4mOhm | 8-SO | 3.5W Ta 7.8W Tc | 38mA | 39 ns | N-Channel | 3mOhm @ 20A, 10V | 2.5V @ 1mA | 3450pF @ 15V | 87nC @ 10V | 20ns | 13 ns | 20V | 38A Tc | 30V | 3.45nF | 4.5V 10V | ±20V | 3 mΩ | ||||||||||||||||||||||||||||||||||||||||
SI4866BDY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.75mm | 4mm | 5.3mOhm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 8 | 1 | FET General Purpose Powers | 1 | Single | 2.5W | 13 ns | 1V | 2.5W Ta 4.45W Tc | 16.1A | 150°C | SWITCHING | 57 ns | SILICON | N-Channel | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 5020pF @ 6V | 80nC @ 4.5V | 12ns | 9 ns | 8V | 12V | 21.5A Tc | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
SI4186DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | 540.001716mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 30 | 8 | 1 | 1 | Single | 3W | 29 ns | 3W Ta 6W Tc | 35.8A | SWITCHING | 0.0026Ohm | 40 ns | SILICON | N-Channel | 2.6m Ω @ 15A, 10V | 2.4V @ 250μA | 3630pF @ 10V | 90nC @ 10V | 16ns | 13 ns | 20V | 20V | 2.4 V | 25.3A | 35.8A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SIRA06DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Active | 1 (Unlimited) | EAR99 | 6.25mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 5.26mm | 2.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 260 | 30 | 1 | Single | 5W | 24 ns | 1.1V | 5W Ta 62.5W Tc | 40A | 30 ns | N-Channel | 2.5m Ω @ 15A, 10V | 2.2V @ 250μA | 3595pF @ 15V | 77nC @ 10V | 20 ns | 20V | 30V | 40A Tc | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
SIA418DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Obsolete | 1 (Unlimited) | EAR99 | 2.05mm | ROHS3 Compliant | No | 6 | PowerPAK® SC-70-6 | 750μm | 2.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 3.5W Ta 19W Tc | 12A | N-Channel | 18m Ω @ 9A, 10V | 2.4V @ 250μA | 570pF @ 15V | 17nC @ 10V | 2.4V | 30V | 12A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHP5N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Powers | 1 | TO-220AB | Single | 104W | 12 ns | 104W Tc | 5.3A | SWITCHING | 500V | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 5.3A Tc | 500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFR010TRLPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | 1 | TO-252AA | Single | 10 ns | 25W Tc | 8.2A | 0.2Ohm | 13 ns | SILICON | N-Channel | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 250pF @ 25V | 10nC @ 10V | 50ns | 19 ns | 20V | 60V | 8.2A Tc | 50V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
SI7634BDP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | PowerPAK® SO-8 | 1.04mm | 5.89mm | 5.4mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 30 ns | 5W Ta 48W Tc | 40A | 34 ns | SILICON | N-Channel | 5.4m Ω @ 15A, 10V | 2.6V @ 250μA | 3150pF @ 15V | 68nC @ 10V | 12ns | 12 ns | 20V | 30V | 22.5A | 40A Tc | 70A | 45 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SI4423DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.55mm | 4mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 1.5W | 75 ns | 1.5W Ta | -10A | SWITCHING | 0.0075Ohm | 460 ns | SILICON | P-Channel | 7.5m Ω @ 14A, 4.5V | 900mV @ 600μA | 175nC @ 5V | 165ns | 165 ns | 8V | -20V | 10A Ta | 20V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
SI7390DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 4.9mm | ROHS3 Compliant | Lead Free | No | 8 | PowerPAK® SO-8 | 1.04mm | 5.89mm | 9.5mOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.8W | 16 ns | 1.8W Ta | 9A | SWITCHING | 30V | 43 ns | SILICON | N-Channel | 9.5m Ω @ 15A, 10V | 3V @ 250μA | 15nC @ 4.5V | 7ns | 7 ns | 20V | 9A | 9A Ta | 30V | 50A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
SIR426DP-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® SO-8 | Unknown | 1.12mm | 12.5MOhm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | S17-0173-Single | e3 | DUAL | C BEND | 260 | 40 | 8 | R-XDSO-C5 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 41.7W | 9 ns | 2.5V | 4.8W Ta 41.7W Tc | 30A | 150°C | SWITCHING | 18 ns | SILICON | N-Channel | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 1160pF @ 20V | 31nC @ 10V | 15ns | 10 ns | 20V | 40V | 2.5 V | 30A Tc | 70A | 20 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
SI2301CDS-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 3.04mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.4mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | Other Transistors | 1 | Single | 860mW | 11 ns | -1V | 860mW Ta 1.6W Tc | -2.3A | 150°C | SWITCHING | 30 ns | SILICON | P-Channel | 112m Ω @ 2.8A, 4.5V | 1V @ 250μA | 405pF @ 10V | 10nC @ 4.5V | 35ns | 35 ns | 8V | -20V | 3.1A Tc | 20V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
SIHU5N50D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | DRAIN | Single | 104W | 12 ns | 104W Tc | 5.3A | SWITCHING | 14 ns | SILICON | N-Channel | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 325pF @ 100V | 20nC @ 10V | 11ns | 11 ns | 30V | 500V | 3 V | 5.3A Tc | 28.8 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
IRL520LPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2017 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.54mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-262-3 Long Leads, I2Pak, TO-262AA | 8.76mm | 4.7mm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 9.8 ns | 60W Tc | 9.2A | SWITCHING | 0.27Ohm | 21 ns | SILICON | N-Channel | 270m Ω @ 5.5A, 5V | 2V @ 250μA | 490pF @ 25V | 12nC @ 5V | 64ns | 27 ns | 10V | 100V | 9.2A Tc | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
IRFZ10PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 200MOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | TO-220AB | DRAIN | Single | 43W | 10 ns | 4V | 43W Tc | 10A | SWITCHING | 60V | 13 ns | SILICON | N-Channel | 200m Ω @ 6A, 10V | 4V @ 250μA | 300pF @ 25V | 11nC @ 10V | 50ns | 19 ns | 20V | 10A Tc | 60V | 40A | 47 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
SIHG20N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | 160mOhm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-247AC | DRAIN | Single | 17 ns | 4V | 179W Tc | 19A | SWITCHING | 48 ns | SILICON | N-Channel | 184m Ω @ 10A, 10V | 4V @ 250μA | 1640pF @ 100V | 92nC @ 10V | 27ns | 25 ns | 20V | 500V | 19A Tc | 42A | 204 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
SIHG11N80E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 179W Tc | N-Channel | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 1670pF @ 100V | 88nC @ 10V | 12A Tc | 800V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIHB12N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Bulk | 2005 | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 4V | 114W Tc | 10.5A | SWITCHING | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 886pF @ 100V | 50nC @ 10V | 500V | 10.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRFPC50PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2016 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 11A | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 600mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | 1 | 1 | Single | 180W | 18 ns | 4V | 600mOhm | TO-247-3 | 180W Tc | 830 ns | 11A | 88 ns | N-Channel | 600mOhm @ 6A, 10V | 4V @ 250μA | 2700pF @ 25V | 140nC @ 10V | 37ns | 36 ns | 20V | 600V | 11A Tc | 600V | 2.7nF | 10V | ±20V | 600 mΩ | |||||||||||||||||||||||||||||||||||||
SIHU3N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | 6.73mm | ROHS3 Compliant | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | Unknown | 6.22mm | 2.39mm | Through Hole | 329.988449mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | DRAIN | Single | 104W | 12 ns | 3V | 69W Tc | 3A | SWITCHING | 500V | 11 ns | SILICON | N-Channel | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 175pF @ 100V | 12nC @ 10V | 9ns | 13 ns | 30V | 3A | 3A Tc | 500V | 5.5A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
SIS322DNT-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Digi-Reel® | 2004 | TrenchFET® | Discontinued | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | C BEND | S-PDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 30 ns | 1.2V | 3.2W Ta 19.8W Tc | 38.3A | SWITCHING | 0.0075Ohm | 30V | 30 ns | SILICON | N-Channel | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 1000pF @ 15V | 21.5nC @ 10V | 20ns | 14 ns | 2.4V | 38.3A Tc | 30V | 70A | 5 mJ | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||
SI2316DS-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-236-3, SC-59, SOT-23-3 | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 3 | 1 | FET General Purpose Powers | 1 | Single | 9 ns | 700mW Ta | 3.4A | SWITCHING | 0.05Ohm | 14 ns | SILICON | N-Channel | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 215pF @ 15V | 7nC @ 10V | 20V | 2.9A | 2.9A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFD320PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 4 | AVALANCHE RATED | 4-DIP (0.300, 7.62mm) | Unknown | 3.37mm | 6.29mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 4 | R-PDIP-T3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 1W | 10 ns | 1W Ta | 490mA | SWITCHING | 30 ns | SILICON | N-Channel | 1.8 Ω @ 210mA, 10V | 4V @ 250μA | 410pF @ 25V | 20nC @ 10V | 14ns | 14 ns | 20V | 400V | 4 V | 490mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
SIHP18N50C-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 2011 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 270mOhm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 223W | 80 ns | 5V | 223W Tc | 18A | SWITCHING | 500V | 32 ns | SILICON | N-Channel | 270m Ω @ 10A, 10V | 5V @ 250μA | 2942pF @ 25V | 76nC @ 10V | 27ns | 44 ns | 30V | 5 V | 18A Tc | 500V | 72A | 10V | ±30V | ||||||||||||||||||||||||||||||||||
IRFP054PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2017 | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | 70A | No | 3 | TO-247-3 | 20.7mm | 5.31mm | 14mOhm | Through Hole | 38.000013g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 3 | 1 | 1 | DRAIN | Single | 230W | 20 ns | 230W Tc | 540 ns | 70A | SWITCHING | 83 ns | SILICON | N-Channel | 14m Ω @ 54A, 10V | 4V @ 250μA | 4500pF @ 25V | 160nC @ 10V | 160ns | 150 ns | 20V | 60V | 70A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
SIHG33N60EF-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-247-3 | Unknown | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-247AC | DRAIN | Single | 28 ns | 4V | 278W Tc | 33A | SWITCHING | 0.098Ohm | 161 ns | SILICON | N-Channel | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 3454pF @ 100V | 155nC @ 10V | 43ns | 48 ns | 20V | 600V | 33A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
SIHP14N50D-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 3 | 10.51mm | ROHS3 Compliant | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.65mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | Single | 208W | 16 ns | 3V | 208W Tc | 14A | SWITCHING | 0.4Ohm | 500V | 29 ns | SILICON | N-Channel | 400m Ω @ 7A, 10V | 5V @ 250μA | 1144pF @ 100V | 58nC @ 10V | 27ns | 26 ns | 30V | 14A Tc | 500V | 56 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
IRFZ24STRRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | GULL WING | 260 | 30 | 4 | R-PSSO-G2 | 1 | SINGLE | DRAIN | 13 ns | 3.7W Ta 60W Tc | 17A | SWITCHING | 0.1Ohm | 60V | 25 ns | SILICON | N-Channel | 100m Ω @ 10A, 10V | 4V @ 250μA | 640pF @ 25V | 25nC @ 10V | 58ns | 42 ns | 20V | 17A Tc | 60V | 68A | 100 mJ | 10V | ±20V |
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