Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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SIHP6N40D-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | No | 3 | TO-220-3 | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | FET General Purpose Power | 1 | TO-220AB | Single | 104W | 12 ns | 104W Tc | 6A | SWITCHING | 1Ohm | 400V | 14 ns | SILICON | N-Channel | 1 Ω @ 3A, 10V | 5V @ 250μA | 311pF @ 100V | 18nC @ 10V | 11ns | 8 ns | 30V | 6A | 6A Tc | 400V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
IRF624PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 4.4A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 1.1Ohm | Through Hole | 6.000006g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | 1 | Single | 50W | 7 ns | 1.1Ohm | TO-220AB | 50W Tc | 4.4A | 20 ns | N-Channel | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 260pF @ 25V | 14nC @ 10V | 13ns | 12 ns | 20V | 250V | 4.4A Tc | 250V | 260pF | 10V | ±20V | 1.1 Ω | ||||||||||||||||||||||||||||||||||||||
SIHP12N50E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | 3 | TO-220-3 | Unknown | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | 1 | TO-220AB | Single | 13 ns | 4V | 114W Tc | 10.5A | SWITCHING | 500V | 29 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 886pF @ 100V | 50nC @ 10V | 16ns | 12 ns | 20V | 10.5A Tc | 500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
SIHF12N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 Full Pack | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | 1 | TO-220AB | ISOLATED | Single | 33W | 16 ns | 33W Tc | 12A | SWITCHING | 650V | 35 ns | SILICON | N-Channel | 380m Ω @ 6A, 10V | 4V @ 250μA | 1224pF @ 100V | 70nC @ 10V | 19ns | 18 ns | 20V | 12A Tc | 650V | 28A | 226 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
IRLZ14PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | 10A | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 200mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | 1 | 1 | Single | 43W | 9.3 ns | 2V | 200mOhm | TO-220AB | 43W Tc | 130 ns | 10A | 17 ns | N-Channel | 200mOhm @ 6A, 5V | 2V @ 250μA | 400pF @ 25V | 8.4nC @ 5V | 110ns | 26 ns | 10V | 60V | 2 V | 10A Tc | 60V | 400pF | 4V 5V | ±10V | 200 mΩ | ||||||||||||||||||||||||||||||||||
IRF9Z34PBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.41mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | Unknown | 9.01mm | 4.7mm | 140mOhm | Through Hole | 6.000006g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 88W | 18 ns | -4V | 140mOhm | TO-220AB | 88W Tc | 18A | 20 ns | P-Channel | 140mOhm @ 11A, 10V | 4V @ 250μA | 1100pF @ 25V | 34nC @ 10V | 120ns | 58 ns | 20V | -4 V | 18A Tc | 60V | 1.1nF | 10V | ±20V | 140 mΩ | ||||||||||||||||||||||||||||||||||||||
SIHF6N65E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2016 | yes | Active | 1 (Unlimited) | 3 | ROHS3 Compliant | Lead Free | Tin | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | 1 | TO-220AB | ISOLATED | Single | 31W | 14 ns | 31W Tc | 7A | SWITCHING | 0.6Ohm | 30 ns | SILICON | N-Channel | 600m Ω @ 3A, 10V | 4V @ 250μA | 820pF @ 100V | 48nC @ 10V | 12ns | 20 ns | 20V | 650V | 7A | 7A Tc | 56 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
SIHP11N80E-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | E | Active | 1 (Unlimited) | RoHS Compliant | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 179W Tc | N-Channel | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 1670pF @ 100V | 88nC @ 10V | 12A Tc | 800V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SUD45P03-09-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | TrenchFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.38mm | 6.223mm | 8.7mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 2.1W | 12 ns | -2.5V | 2.1W Ta 41.7W Tc | -45A | 150°C | SWITCHING | 40 ns | SILICON | P-Channel | 8.7m Ω @ 20A, 10V | 2.5V @ 250μA | 2700pF @ 15V | 90nC @ 10V | 11ns | 12 ns | 20V | -30V | 45A Tc | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
SUP90N04-3M3P-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Bulk | 2001 | TrenchFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | 260 | 30 | 3 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 3.1W | 11 ns | 1V | 3.1W Ta 125W Tc | 90A | SWITCHING | 40V | 45 ns | SILICON | N-Channel | 3.3m Ω @ 22A, 10V | 2.5V @ 250μA | 5286pF @ 20V | 131nC @ 10V | 7ns | 7 ns | 20V | 90A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
SI5461EDC-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 3.0988mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SMD, Flat Lead | 1.0922mm | 1.7018mm | 45mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | Other Transistors | 1 | Single | 1.3W | 2.5 μs | 1.3W Ta | -6.2A | 27 μs | SILICON | P-Channel | 45m Ω @ 5A, 4.5V | 450mV @ 250μA (Min) | 20nC @ 4.5V | 4.5μs | 4.5 μs | 12V | -20V | 4.5A | 4.5A Ta | 20V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
SI1471DH-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 2mm | ROHS3 Compliant | No | 70 | 6-TSSOP, SC-88, SOT-363 | 1mm | 1.25mm | Surface Mount | 7.512624mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | R-PDSO-G6 | 1 | Other Transistors | 1 | Single | 4 ns | 1.5W Ta 2.78W Tc | 2.8A | SWITCHING | 30V | 23 ns | SILICON | P-Channel | 100m Ω @ 2A, 10V | 1.6V @ 250μA | 445pF @ 15V | 9.8nC @ 4.5V | 12V | 2.7A Tc | 30V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
SI4654DY-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2014 | TrenchFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.5mm | 4mm | Surface Mount | 186.993455mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 40 | 8 | 1 | 1 | Single | 30 ns | 2.5W Ta 5.9W Tc | 18.6A | SWITCHING | 0.004Ohm | 50 ns | SILICON | N-Channel | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 3770pF @ 15V | 100nC @ 10V | 10ns | 10 ns | 16V | 25V | 28.6A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
SI7703EDN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C6 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.3W | 4 ns | -1V | 1.3W Ta | -6.3A | SWITCHING | 23 ns | SILICON | P-Channel | 48m Ω @ 6.3A, 4.5V | 1V @ 800μA | 18nC @ 4.5V | 6ns | 6 ns | 12V | 20V | Schottky Diode (Isolated) | 4.3A | 4.3A Ta | 20A | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
SI7888DP-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.969mm | ROHS3 Compliant | No | 8 | PowerPAK® SO-8 | 1.0668mm | 5.0038mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 20 | 8 | R-XDSO-C5 | FET General Purpose Power | 1 | DRAIN | Single | 1.8W | 10 ns | 1.8W Ta | 9.4A | SWITCHING | 30V | 24 ns | SILICON | N-Channel | 12m Ω @ 12.4A, 10V | 2V @ 250μA | 10.5nC @ 5V | 11ns | 11 ns | 20V | 9.4A Ta | 30V | 50A | 20 mJ | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||
SUD50P04-15-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 15mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 4 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 100W | 15 ns | -1V | 3W Ta 100W Tc | -50A | 75 ns | SILICON | P-Channel | 15m Ω @ 30A, 10V | 1V @ 250μA (Min) | 5400pF @ 25V | 130nC @ 10V | 380ns | 140 ns | 20V | -40V | -1 V | 50A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
SI4860DY-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 8mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 8 | FET General Purpose Powers | 1 | Single | 1.6W | 18 ns | 1V | 1.6W Ta | 16A | SWITCHING | 46 ns | SILICON | N-Channel | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 18nC @ 4.5V | 12ns | 12 ns | 20V | 30V | 1 V | 11A Ta | 4.5nF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRF9540SPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tube | 2014 | Active | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Unknown | 4.83mm | 9.65mm | 200mOhm | Surface Mount | 1.437803g | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 150W | 16 ns | -4V | 200mOhm | D2PAK | 3.7W Ta 150W Tc | -19A | 34 ns | P-Channel | 200mOhm @ 11A, 10V | 4V @ 250μA | 1400pF @ 25V | 61nC @ 10V | 73ns | 57 ns | 20V | 19A Tc | 100V | 1.4nF | 10V | ±20V | 200 mΩ | ||||||||||||||||||||||||||||||||||||||
IRFP460APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2007 | Active | 1 (Unlimited) | 3 | 15.87mm | ROHS3 Compliant | Lead Free | 20A | No | 3 | TO-247-3 | Unknown | 25.11mm | 5.31mm | 270mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 260 | 40 | 3 | 1 | 1 | Single | 280W | 18 ns | 4V | 280W Tc | 20A | 150°C | SWITCHING | 45 ns | SILICON | N-Channel | 270m Ω @ 12A, 10V | 4V @ 250μA | 3100pF @ 25V | 105nC @ 10V | 55ns | 39 ns | 30V | 500V | 2 V | 20A Tc | 80A | 960 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
IRFP22N50APBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 150°C | -55°C | 15.87mm | ROHS3 Compliant | Lead Free | 22A | No | 3 | TO-247-3 | Unknown | 20.7mm | 5.31mm | 230mOhm | Through Hole | 38.000013g | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | 1 | 1 | Single | 277W | 26 ns | 4V | 230mOhm | TO-247-3 | 277W Tc | 850 ns | 22A | 47 ns | N-Channel | 230mOhm @ 13A, 10V | 4V @ 250μA | 3450pF @ 25V | 120nC @ 10V | 94ns | 47 ns | 30V | 500V | 2 V | 22A Tc | 500V | 3.45nF | 10V | ±30V | 230 mΩ | ||||||||||||||||||||||||||||||||||
SI3430DV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2017 | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | Unknown | 1mm | 1.65mm | 170mOhm | Surface Mount | 19.986414mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 6 | 1 | FET General Purpose Power | 1 | Single | 1.14W | 9 ns | 2V | 1.14W Ta | 1.8A | 16 ns | SILICON | N-Channel | 170m Ω @ 2.4A, 10V | 2V @ 250μA (Min) | 6.6nC @ 10V | 11ns | 11 ns | 20V | 100V | 2 V | 1.8A Ta | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
SIA421DJ-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TrenchFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.05mm | ROHS3 Compliant | Lead Free | No | 6 | PowerPAK® SC-70-6 | Unknown | 750μm | 2.05mm | 83MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | 260 | 40 | 6 | S-XDSO-N3 | 1 | Other Transistors | 1 | DRAIN | Single | 3.5W | 40 ns | -3V | 3.5W Ta 19W Tc | -12A | SWITCHING | 30 ns | SILICON | P-Channel | 35m Ω @ 5.3A, 10V | 3V @ 250μA | 950pF @ 15V | 29nC @ 10V | 110ns | 12 ns | 20V | -30V | -3 V | 7.9A | 12A Tc | 30V | 35A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
SQJ486EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | unknown | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G4 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 56W Tc | 0.026Ohm | 75V | SILICON | N-Channel | 26m Ω @ 51A, 10V | 2.1V @ 250μA | 1386pF @ 15V | 34nC @ 10V | 30A | 30A Tc | 75V | 120A | 9 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
SI3483CDV-T1-E3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 6 | EAR99 | 3.05mm | ROHS3 Compliant | Lead Free | No | 6 | SOT-23-6 Thin, TSOT-23-6 | No SVHC | 1mm | 1.65mm | Surface Mount | 19.986414mg | -55°C~150°C TA | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 6 | 1 | Other Transistors | 1 | Single | 2W | 10 ns | -3V | 2W Ta 4.2W Tc | -8A | SWITCHING | 0.034Ohm | 30V | 30 ns | SILICON | P-Channel | 34m Ω @ 6.1A, 10V | 3V @ 250μA | 1000pF @ 15V | 33nC @ 10V | 15ns | 10 ns | 20V | -3 V | 8A | 8A Tc | 30V | 10V | ±20V | ||||||||||||||||||||||||||||
SQJA84EP-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | 1 (Unlimited) | 4 | ROHS3 Compliant | PowerPAK® SO-8 | unknown | 1.267mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G4 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 55W | 11 ns | 55W Tc | 46A | 175°C | 23 ns | SILICON | N-Channel | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 2100pF @ 25V | 35nC @ 10V | 20V | 80V | 46A Tc | 36 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SI7309DN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 8 | PowerPAK® 1212-8 | Unknown | 115MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | C BEND | 260 | 40 | 8 | S-XDSO-C5 | 1 | Other Transistors | 1 | DRAIN | Single | 3.2W | 10 ns | -3V | 3.2W Ta 19.8W Tc | -8A | SWITCHING | 30 ns | SILICON | P-Channel | 115m Ω @ 3.9A, 10V | 3V @ 250μA | 600pF @ 30V | 22nC @ 10V | 15ns | 33 ns | 20V | -60V | 3.9A | 8A Tc | 60V | 20A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IRFR9220TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 150°C | -55°C | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Unknown | 2.39mm | 6.22mm | 1.5Ohm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 2.5W | 8.8 ns | -2V | 1.5Ohm | D-Pak | 2.5W Ta 42W Tc | 3.6A | 7.3 ns | P-Channel | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 340pF @ 25V | 20nC @ 10V | 27ns | 19 ns | 20V | -200V | -2 V | 3.6A Tc | 200V | 340pF | 10V | ±20V | 1.5 Ω | ||||||||||||||||||||||||||||||||||||
IRFR9014TRPBF | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.39mm | 6.22mm | 500mOhm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 11 ns | 2.5W Ta 25W Tc | 5.1A | SWITCHING | 9.6 ns | SILICON | P-Channel | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 270pF @ 25V | 12nC @ 10V | 63ns | 31 ns | 20V | -60V | 5.1A Tc | 60V | 20A | 10V | ±20V | |||||||||||||||||||||||||||||
SI7114ADN-T1-GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | TrenchFET® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 3.05mm | ROHS3 Compliant | No | 8 | PowerPAK® 1212-8 | Unknown | 1.04mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | DUAL | C BEND | 260 | 30 | 8 | S-XDSO-C5 | 1 | FET General Purpose Powers | 1 | DRAIN | Single | 3.7W | 20 ns | 3V | 3.7W Ta 39W Tc | 18.3A | SWITCHING | 0.0075Ohm | 30V | 20 ns | SILICON | N-Channel | 7.5m Ω @ 18A, 10V | 2.5V @ 250μA | 1230pF @ 15V | 32nC @ 10V | 14ns | 10 ns | 20V | 35A | 35A Tc | 30V | 60A | 45 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
SQS401EN-T1_GE3 | Vishay Siliconix | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2016 | TrenchFET® | Active | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | PowerPAK® 1212-8 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 20mOhm | PowerPAK® 1212-8 | 62.5W Tc | P-Channel | 29mOhm @ 12A, 10V | 2.5V @ 250μA | 1875pF @ 20V | 21.2nC @ 4.5V | 16A Tc | 40V | 4.5V 10V | ±20V |
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