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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 10 ns 55V 100W Tc 30A 24 ns SILICON N-Channel 23m Ω @ 21A, 10V 4V @ 50μA 901pF @ 25V 32nC @ 10V 23ns 18 ns 20V 30A Tc 120A 150 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 99W Tc 56A N-Channel 7.9m Ω @ 43A, 10V 3.7V @ 100μA 3020pF @ 25V 87nC @ 10V 56A Tc 60V 6V 10V ±20V
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    		 download 18 Weeks Tube StrongIRFET™ Active 1 (Unlimited) ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C MOSFET (Metal Oxide) 556W Tc N-Channel 2.7m Ω @ 100A, 10V 4.6V @ 265μA 12000pF @ 75V 200nC @ 10V 203A 150V 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W 14 ns 3.8W Ta 110W Tc 13A SWITCHING 0.29Ohm 53 ns SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V 13A Tc 150V 44A 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ C7 yes Active 2A (4 Weeks) 4 ROHS3 Compliant Contains Lead 4 4-PowerTSFN not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NO LEAD NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 75W Tc 12A SWITCHING 0.195Ohm SILICON N-Channel 195m Ω @ 2.9A, 10V 4V @ 290μA 1150pF @ 400V 23nC @ 10V 12A Tc 57 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 9.02mm 4.83mm Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 22 ns 300W Tc 75A 55 ns N-Channel 3.4m Ω @ 75A, 10V 4V @ 150μA 6600pF @ 48V 195nC @ 10V 77ns 64 ns 4V 60V 75A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2005 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.02mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 290W 24 ns 4V 290W Tc 51 ns 75A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 150μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 4 V 260A 75A Tc 820 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tube 2015 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 210W 15 ns 210W Tc 19A 22 ns N-Channel 185m Ω @ 11A, 10V 5V @ 150μA 2340pF @ 25V 57nC @ 10V 16ns 10 ns 20V 300V 19A Tc 10V ±20V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Not For New Designs 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 41A 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 45MOhm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 Not Qualified 1 DRAIN Single 3.1W 16 ns 5.5V 3.1W Ta 41A SWITCHING 25 ns SILICON N-Channel 45m Ω @ 25A, 10V 5.5V @ 250μA 2520pF @ 25V 110nC @ 10V 63ns 14 ns 30V 150V 150V 5.5 V 41A Tc 164A 470 mJ 10V ±30V
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    		 download 18 Weeks Through Hole Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 10.36mm ROHS3 Compliant Contains Lead No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 11.177mm 4.572mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) 3 1 Halogen Free Single 188W 35 ns 60V 188W Tc 120A SWITCHING 62 ns SILICON N-Channel 3.2m Ω @ 100A, 10V 4V @ 118μA 13000pF @ 30V 165nC @ 10V 120ns 20 ns 20V 60V 120A Tc 480A 10V ±20V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 19 ns 75V 300W Tc 100A 0.0087Ohm 85 ns SILICON N-Channel 6.5m Ω @ 80A, 10V 2V @ 250μA 5400pF @ 25V 246nC @ 10V 56ns 22 ns 20V 100A Tc 400A 810 mJ 4.5V 10V ±20V
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    		 download Through Hole Tube 2006 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 26 ns 75V 300W Tc 80A 0.0074Ohm 61 ns SILICON N-Channel 7.4m Ω @ 80A, 10V 4V @ 250μA 4700pF @ 25V 180nC @ 10V 50ns 30 ns 20V 80A Tc 810 mJ 10V ±20V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) GULL WING R-PSSO-G2 AEC-Q101 1 DRAIN Halogen Free Single 300W 19 ns 55V 300W Tc 80A 0.0062Ohm 75 ns SILICON N-Channel 4.7m Ω @ 80A, 10V 2V @ 250μA 5000pF @ 25V 190nC @ 10V 23ns 22 ns 20V 55V 80A Tc 700 mJ 4.5V 10V ±20V
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    		 download 16 Weeks Surface Mount Tube 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 18 ns 2V 200W Tc 160A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 160A Tc 480 mJ 10V ±20V