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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 11 ns 650V 104.2W Tc 11.4A SWITCHING 45 ns SILICON N-Channel 310m Ω @ 4.4A, 10V 4.5V @ 440μA 1100pF @ 100V 41nC @ 10V 7.5ns 7 ns 20V 11.4A Tc 290 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 140A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 6mOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 150W 14 ns 1V 200W Tc 180 ns 140A SWITCHING 29 ns SILICON N-Channel 6m Ω @ 71A, 10V 1V @ 250μA 5000pF @ 25V 140nC @ 4.5V 230ns 35 ns 16V 30V 30V 1 V 140A Tc 470A 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 13 ns 2V 140W Tc 62A SWITCHING 28 ns SILICON N-Channel 13.5m Ω @ 37A, 10V 4V @ 100μA 3180pF @ 50V 87nC @ 10V 32ns 20V 2 V 62A Tc 100V 250A 10V ±20V
    IPP80N03S4L03AKSA1 IPP80N03S4L03AKSA1 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2007 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 14 ns 30V 136W Tc 80A 0.0027Ohm 62 ns SILICON N-Channel 2.7m Ω @ 80A, 10V 2.2V @ 90μA 9750pF @ 25V 140nC @ 10V 9ns 13 ns 16V 80A Tc 260 mJ 4.5V 10V ±16V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) 3 ROHS3 Compliant TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 41W Tc SWITCHING 0.36Ohm 600V SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 9A Tc 650V 26A 27 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 16.129mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 21.1mm 4.826mm 36MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC Single 160W 11 ns 4V 160W Tc 42A SWITCHING 45 ns SILICON N-Channel 36m Ω @ 23A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 56ns 40 ns 20V 100V 4 V 42A Tc 140A 420 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack No SVHC Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 3V 34W Tc 26.7A N-Channel 190m Ω @ 9.5A, 10V 3.5V @ 630μA 1400pF @ 100V 63nC @ 10V Super Junction 26.7A Tc 600V 10V ±20V
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    		 download Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 32W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 4.6A, 10V 3.9V @ 250μA 790pF @ 25V 27nC @ 10V 7.3A 7.3A Tc 650V 21.9A 230 mJ 10V ±20V
    IPA057N08N3GXKSA1 IPA057N08N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 39W 17 ns 80V 39W Tc 60A SWITCHING 0.0057Ohm 36 ns SILICON N-Channel 5.7m Ω @ 60A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 42ns 9 ns 20V 60A Tc 240A 290 mJ 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 80A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 15Ohm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 260W 15 ns 4V 260W Tc 150 ns 80A SWITCHING 61 ns SILICON N-Channel 15m Ω @ 45A, 10V 4V @ 250μA 3830pF @ 25V 120nC @ 10V 130ns 120 ns 20V 100V 100V 4 V 75A 80A Tc 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 115W 24 ns 60V 115W Tc 80A SWITCHING 0.0057Ohm 32 ns SILICON N-Channel 5.4m Ω @ 80A, 10V 4V @ 58μA 6600pF @ 30V 82nC @ 10V 68ns 9 ns 20V 80A Tc 77 mJ 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 73W Tc 11A SWITCHING 0.45Ohm 800V SILICON N-Channel 450m Ω @ 4.5A, 10V 3.5V @ 220μA 770pF @ 500V 24nC @ 10V Super Junction 11A Tc 800V 29A 29 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 6.7056mm ROHS3 Compliant Lead Free 16A 3 AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE 9.65mm e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power Not Qualified 1 DRAIN Single 52W 6.4 ns 4V 79W Tc 16A SWITCHING 0.115Ohm 37 ns SILICON N-Channel 115m Ω @ 10A, 10V 4V @ 250μA 640pF @ 25V 44nC @ 10V 27ns 25 ns 20V 100V 100V 4 V 15A 16A Tc 60A 150 mJ 10V ±20V
    IPS70R360P7SAKMA1 IPS70R360P7SAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) 59.5W Tc N-Channel 360m Ω @ 3A, 10V 3.5V @ 150μA 517pF @ 400V 16.4nC @ 10V 12.5A Tc 700V 10V ±16V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole 2.299997g -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 1 1 TO-220AB ISOLATED Halogen Free Single 11 ns 600V 30W Tc 9.1A SWITCHING 0.46Ohm 70 ns SILICON N-Channel 460m Ω @ 3.4A, 10V 3.5V @ 280μA 620pF @ 100V 28nC @ 10V 9ns 10 ns 20V 9.1A Tc 26A 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2002 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 110A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 200W 14 ns 4V 200W Tc 110A SWITCHING 0.008Ohm 50 ns SILICON N-Channel 8m Ω @ 62A, 10V 4V @ 250μA 3247pF @ 25V 146nC @ 10V 101ns 65 ns 20V 55V 75A 110A Tc 264 mJ 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 24.9W Tc SWITCHING 0.6Ohm 700V SILICON N-Channel 600m Ω @ 1.8A, 10V 3.5V @ 90μA 364pF @ 400V 10.5nC @ 10V 8.5A Tc 700V 20.5A 10V ±16V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 53A 3 TO-220-3 No SVHC Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 100W 15 ns 100V 100W Tc 53A SWITCHING 0.0165Ohm 27 ns SILICON N-Channel 16.5m Ω @ 53A, 10V 4V @ 61μA 3220pF @ 50V 48nC @ 10V 14ns 7 ns 20V 53A Tc 212A 107 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 4.826mm ROHS3 Compliant No 3 DirectFET™ Isometric SB No SVHC 558.8μm 3.95mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N2 FET General Purpose Power 1 DRAIN Single 2.4W 3.8 ns 4V 2.4W Ta 30W Tc 14.4A AMPLIFIER 0.062Ohm 7.1 ns SILICON N-Channel 62m Ω @ 8.9A, 10V 5V @ 25μA 515pF @ 25V 13nC @ 10V 6.4ns 3.6 ns 20V 100V 77A 4.1A Ta 14.4A Tc 58A 10V ±20V
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    		 download 15 Weeks Through Hole Tube 2008 HEXFET® Not For New Designs 1 (Unlimited) 3 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm 2.2Ohm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 78W 14 ns 3V 78W Tc 110 ns 3.6A SWITCHING 24 ns SILICON N-Channel 2.2 Ω @ 2.2A, 10V 5V @ 250μA 810pF @ 25V 20nC @ 10V 22ns 17 ns 20V 500V 3.6A Tc 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ C6 Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount 75.891673mg -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED R-PDSO-N5 1 1 DRAIN Halogen Free Single 7.7 ns 650V 26.6W Tc 3A SWITCHING 33 ns SILICON N-Channel 1.5 Ω @ 1A, 10V 3.5V @ 100μA 225pF @ 100V 11nC @ 10V 5.9ns 18.2 ns 30V 650V 3A Tc 26 mJ 10V ±20V
    BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 150°C -55°C ROHS3 Compliant 8-PowerTDFN not_compliant 1.1mm Surface Mount e3 Tin (Sn) 1 2.1W 5 ns 5.4mOhm 14A 150°C 14 ns 20V 60V 60V
    IRFR3711ZTRPBF IRFR3711ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 93A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm 5.7MOhm Surface Mount -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 79W 12 ns 79W Tc 93A SWITCHING 15 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.45V @ 250μA 2160pF @ 10V 27nC @ 4.5V 13ns 5.2 ns 20V 20V 93A Tc 4.5V 10V ±20V
    IPD50N04S309ATMA1 IPD50N04S309ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 11 ns 40V 63W Tc 50A 0.009Ohm 16 ns SILICON N-Channel 9m Ω @ 50A, 10V 4V @ 28μA 1750pF @ 25V 26nC @ 10V 7ns 6 ns 20V 50A Tc 200A 140 mJ 10V ±20V
    IPI70R950CEXKSA1 IPI70R950CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks 2013 yes Active 3 (168 Hours) 3 EAR99 150°C -40°C ROHS3 Compliant Lead Free ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE TO-262AA DRAIN Halogen Free N-CHANNEL 700V SWITCHING 0.95Ohm METAL-OXIDE SEMICONDUCTOR 700V 12A 50 mJ
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0045Ohm 30V SILICON N-Channel 4.5m Ω @ 15A, 10V 2.3V @ 250μA 4010pF @ 15V 50nC @ 4.5V 30A 140A Tc 30V 560A 530 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.6W -20V 1.6W Ta 7A SILICON P-Channel 21m Ω @ 8.9A, 4.5V 1.2V @ 100μA 3750pF @ 15V 39nC @ 4.5V 55ns 12V 7A Ta 20V 35.6A 97 mJ 2.5V 4.5V ±12V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 110A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 120W 12 ns 2.5W Ta 120W Tc 110A SWITCHING 0.0065Ohm 17 ns SILICON N-Channel 6.5m Ω @ 15A, 10V 3V @ 250μA 2980pF @ 10V 44nC @ 4.5V 220ns 12 ns 20V 20V 100A Tc 440A 460 mJ 4.5V 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Not For New Designs 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier 140W Tc 90A N-Channel 4.8m Ω @ 66A, 10V 3.7V @ 100μA 4360pF @ 25V 130nC @ 10V 90A Tc 60V 6V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.1W Ta 43W Tc 40A SWITCHING 0.0033Ohm SILICON N-Channel 2.8m Ω @ 20A, 10V 2V @ 250μA 1600pF @ 15V 26nC @ 10V 22A 22A Ta 40A Tc 160A 30 mJ 4.5V 10V ±20V