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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRFS4410PBF IRFS4410PBF Infineon Technologies $0.00
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    		 download Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 200W Tc N-Channel 10m Ω @ 58A, 10V 4V @ 150μA 5150pF @ 50V 180nC @ 10V 88A Tc 100V 10V ±20V
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    		 download 26 Weeks Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 ROHS3 Compliant 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.015Ohm 40V SILICON P-Channel 15m Ω @ 10.5A, 10V 3V @ 250μA 9250pF @ 25V 110nC @ 10V 10.5A 10.5A Ta 40V 43A 4.5V 10V ±20V
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    		 download 14 Weeks Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 9.4MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 97mW 8.7 ns 4.9V 2.5W Ta 50 ns 12A 16 ns N-Channel 9.4m Ω @ 12A, 10V 4.9V @ 100μA 1560pF @ 25V 39nC @ 10V 13ns 12 ns 20V 60V 12A Ta 10V ±20V
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 86W Tc N-Channel 180m Ω @ 8.3A, 10V 5.5V @ 250μA 620pF @ 25V 29nC @ 10V 14A Tc 150V 10V ±30V
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    		 download Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.0033Ohm 55V SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 75A 75A Tc 55V 890A 940 mJ 10V ±20V
    IRF2907ZSPBF IRF2907ZSPBF Infineon Technologies $0.00
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    		 download Tube 2010 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 300W Tc N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7500pF @ 25V 270nC @ 10V 160A Tc 75V 10V ±20V
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING Other Transistors 1 SINGLE WITH BUILT-IN DIODE 2.5W 19 ns 2.5W Ta 12A SWITCHING 80 ns SILICON P-Channel 8.5m Ω @ 12A, 20V 2.4V @ 25μA 1680pF @ 25V 52nC @ 10V 57ns 66 ns 25V -30V 12A Ta 30V 96A 10V 20V ±25V
    IRF8788PBF IRF8788PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 8 SMD/SMT EAR99 5mm ROHS3 Compliant Lead Free Tin No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm 2.8MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 23 ns 1.8V 2.5W Ta 36 ns 24A SWITCHING 23 ns SILICON N-Channel 2.8m Ω @ 24A, 10V 2.35V @ 100μA 5720pF @ 15V 66nC @ 4.5V 24ns 11 ns 20V 30V 30V 1.8 V 24A Ta 230 mJ 4.5V 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 5.9944mm RoHS Compliant Lead Free Tin No 8 8-PowerVDFN 838.2μm 5mm 9.6MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 7.2 ns 3.6W Ta 105W Tc 71A SWITCHING 20 ns SILICON N-Channel 9.6m Ω @ 43A, 10V 4V @ 100μA 2474pF @ 25V 59nC @ 10V 12ns 7.1 ns 20V 75V 13A Ta 71A Tc 10V ±20V
    IRLR8729PBF IRLR8729PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 8.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 55W 10 ns 55W Tc 24 ns 58A SWITCHING 11 ns SILICON N-Channel 8.9m Ω @ 25A, 10V 2.35V @ 25μA 1350pF @ 15V 16nC @ 4.5V 47ns 10 ns 20V 30V 1.8 V 50A 58A Tc 260A 74 mJ 4.5V 10V ±20V
    IRF9393PBF IRF9393PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING Other Transistors 1 SINGLE WITH BUILT-IN DIODE 2.5W 16 ns 2.5W Ta 9.2A SWITCHING 55 ns SILICON P-Channel 13.3m Ω @ 9.2A, 20V 2.4V @ 25μA 1110pF @ 25V 38nC @ 10V 44ns 49 ns 25V -30V 9.2A Ta 30V 75A 10V 20V ±25V
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    		 download Surface Mount Tape & Reel (TR) 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 21 ns 375W Tc 180A SWITCHING 0.0047Ohm 100 ns SILICON N-Channel 4.7m Ω @ 106A, 10V 4V @ 250μA 9575pF @ 50V 215nC @ 10V 86ns 77 ns 20V 100V 180A Tc 720A 10V ±20V
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    		 download 15 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 18 ns 230W Tc 75A SWITCHING 0.0049Ohm 48 ns SILICON N-Channel 4.9m Ω @ 75A, 10V 4V @ 250μA 4780pF @ 25V 180nC @ 10V 110ns 82 ns 20V 55V 75A Tc 600A 420 mJ 10V ±20V
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.7056mm RoHS Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 48W 8.4 ns 48W Tc 60A SWITCHING 0.0084Ohm 4.9 ns SILICON N-Channel 8.4m Ω @ 15A, 10V 2.55V @ 250μA 1190pF @ 10V 14nC @ 4.5V 8.9ns 12 ns 20V 20V 60A Tc 240A 4.5V 10V ±20V
    IRL8113STRLPBF IRL8113STRLPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.668mm RoHS Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.699mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 110W 14 ns 110W Tc 105A SWITCHING 0.006Ohm 18 ns SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 5 ns 20V 30V 42A 105A Tc 420A 220 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Obsolete 1 (Unlimited) SMD/SMT EAR99 3.1mm ROHS3 Compliant Lead Free No 6 SOT-23-6 Thin, TSOT-23-6 No SVHC 1mm 1.7mm 86MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) Other Transistors 1 Single 2W 6.2 ns -1.2V 2W Ta -4A 94 ns P-Channel 86m Ω @ 4A, 4.5V 1.2V @ 250μA 594pF @ 15V 11.4nC @ 4.5V 27ns 126 ns 20V -20V -20V -1.2 V 4A 4A Ta 2.5V 4.5V ±20V
    IRFH5106TRPBF IRFH5106TRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2010 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 5.9944mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 838.2μm 5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL 260 40 R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 114W 8.1 ns 2V 3.6W Ta 114W Tc 100A SWITCHING 0.0056Ohm 23 ns SILICON N-Channel 5.6m Ω @ 50A, 10V 4V @ 250μA 3090pF @ 25V 75nC @ 10V 13ns 9.5 ns 20V 60V 2 V 21A Ta 100A Tc 400A 96 mJ 10V ±20V
    IRFH8337TRPBF IRFH8337TRPBF Infineon Technologies $0.00
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    		 download 17 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free No 8 HIGH RELIABILITY 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL FLAT R-PDSO-F5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.2W 6.4 ns 3.2W Ta 27W Tc 12A SWITCHING 5.7 ns SILICON N-Channel 12.8m Ω @ 16.2A, 10V 2.35V @ 25μA 790pF @ 10V 10nC @ 10V 12ns 4.1 ns 20V 30V 1.8 V 12A Ta 35A Tc 65A 4.5V 10V ±20V
    IRFH8325TR2PBF IRFH8325TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2013 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5.85mm RoHS Compliant Lead Free No 8 8-PowerTDFN No SVHC 1.17mm 5mm 5MOhm Surface Mount MOSFET (Metal Oxide) 3.6W 1 Single 3.6W 12 ns 1.8V 5mOhm PQFN (5x6) 24 ns 21A 14 ns N-Channel 5mOhm @ 20A, 10V 2.35V @ 50μA 2487pF @ 10V 32nC @ 10V 16ns 7.1 ns 20V 30V 1.8 V 21A Ta 82A Tc 30V 2.487nF 5 mΩ
    IRFS7430-7PPBF IRFS7430-7PPBF Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tube 2005 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) 4.83mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 375W 28 ns 375W Tc 240A 161 ns N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 79ns 93 ns 20V 240A Tc 40V 6V 10V ±20V
    IRFS7430PBF IRFS7430PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2006 HEXFET®, StrongIRFET™ Discontinued 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 1 FET General Purpose Power Single 375W 32 ns 3.9V 375W Tc 195A 160 ns N-Channel 1.2m Ω @ 100A, 10V 3.9V @ 250μA 14240pF @ 25V 460nC @ 10V 105ns 100 ns 20V 195A Tc 40V 6V 10V ±20V
    IRFH7936TRPBF IRFH7936TRPBF Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) EAR99 5.2324mm ROHS3 Compliant Lead Free No 8 8-PowerTDFN No SVHC 1.1684mm 6.1468mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 3.1W 17 ns 3.1W Ta 54A 19 ns N-Channel 4.8m Ω @ 20A, 10V 2.35V @ 50μA 2360pF @ 15V 26nC @ 4.5V 12ns 7 ns 20V 30V 76A 20A Ta 54A Tc 4.5V 10V ±20V
    IRFR7546PBF IRFR7546PBF Infineon Technologies $0.00
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    		 download 19 Weeks Surface Mount Tube 2013 StrongIRFET™ Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED 1 Single 99W 8.1 ns 99W Tc 56A 36 ns N-Channel 7.9m Ω @ 43A, 10V 3.7V @ 100μA 3020pF @ 25V 87nC @ 10V 28ns 20 ns 20V 56A Tc 60V 6V 10V ±20V
    IRFR7746PBF IRFR7746PBF Infineon Technologies $0.00
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    		 download Surface Mount, Through Hole Tube 2006 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC not_compliant 2.39mm 6.22mm Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED 1 Single 7.9 ns 3.7V 99W Tc 56A 34 ns N-Channel 11.2m Ω @ 35A, 10V 3.7V @ 100μA 3107pF @ 25V 89nC @ 10V 30ns 21 ns 20V 56A Tc 75V 6V 10V ±20V
    AUIRF3315S AUIRF3315S Infineon Technologies $0.00
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    		 download Surface Mount Tube 2010 HEXFET® Obsolete 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 3.8W 9.6 ns 2V 3.8W Ta 94W Tc 21A 49 ns N-Channel 82m Ω @ 12A, 10V 4V @ 250μA 1300pF @ 25V 95nC @ 10V 32ns 38 ns 20V 150V 21A Tc 10V ±20V
    AUIRF2903ZS AUIRF2903ZS Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 231W 24 ns 231W Tc 160A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 150μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 2 V 160A Tc 10V ±20V
    AUIRF3415 AUIRF3415 Infineon Technologies $0.00
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    		 download 8 Weeks Through Hole Tube 2011 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.66mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 200W 12 ns 2V 200W Tc 43A SWITCHING 0.042Ohm 71 ns SILICON N-Channel 42m Ω @ 22A, 10V 4V @ 250μA 2400pF @ 25V 200nC @ 10V 55ns 69 ns 20V 150V 2 V 43A Tc 590 mJ 10V ±20V
    AUIRFS3006-7P AUIRFS3006-7P Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 6 EAR99 10.67mm ROHS3 Compliant Tin No 7 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-263CB DRAIN 375W 14 ns 2V 375W Tc 240A SWITCHING 118 ns SILICON N-Channel 2.1m Ω @ 168A, 10V 4V @ 250μA 8850pF @ 50V 300nC @ 10V 61ns 69 ns 20V 60V 240A Tc 303 mJ 10V ±20V
    AUIRF7207Q AUIRF7207Q Infineon Technologies $0.00
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    		 download Tube 2003 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Matte Tin (Sn) DUAL GULL WING 260 40 YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.06Ohm 20V SILICON P-Channel 60m Ω @ 5.4A, 4.5V 1.6V @ 250μA 780pF @ 15V 22nC @ 4.5V 5.4A 5.4A Ta 20V 43A 140 mJ 2.7V 4.5V ±12V
    AUIRF2903ZL AUIRF2903ZL Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 231W 24 ns 2V 231W Tc 160A SWITCHING 0.0024Ohm 48 ns SILICON N-Channel 2.4m Ω @ 75A, 10V 4V @ 150μA 6320pF @ 25V 240nC @ 10V 100ns 37 ns 20V 30V 2 V 160A Tc 10V ±20V