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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPP072N10N3GXKSA1 IPP072N10N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 150W Tc SWITCHING 0.0072Ohm 100V SILICON N-Channel 7.2m Ω @ 80A, 10V 3.5V @ 90μA 4910pF @ 50V 68nC @ 10V 80A 80A Tc 100V 320A 160 mJ 6V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ CE yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 500V 32W Tc 18.5A SWITCHING 0.19Ohm SILICON N-Channel 190m Ω @ 6.2A, 13V 3.5V @ 510μA 1137pF @ 100V 47.2nC @ 10V 18.5A Tc 13V ±20V
    IPP076N15N5AKSA1 IPP076N15N5AKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Tube 2013 yes Active 1 (Unlimited) 3 EAR99 175°C -55°C ROHS3 Compliant not_compliant 20.7mm Through Hole ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN N-CHANNEL 214W 14 ns 5.9mOhm 112A 175°C SWITCHING METAL-OXIDE SEMICONDUCTOR 20 ns 20V 150V 150V 448A
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free 42A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 1.778mm 6.22mm 5.5MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 17 ns 4V 140W Tc 42 ns 42A SWITCHING 37 ns SILICON N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 69ns 36 ns 20V 40V 42A Tc 480A 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 8 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 3.6W 27 ns 1.8V 3.6W Ta 156W Tc 100A 31 ns N-Channel 0.95m Ω @ 50A, 10V 2.35V @ 150μA 7330pF @ 13V 111nC @ 10V 54ns 22 ns 20V 49A Ta 100A Tc 25V 4.5V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 107W 16 ns 107W Tc 56A SWITCHING 24 ns SILICON N-Channel 14.4m Ω @ 56A, 10V 4V @ 61μA 3220pF @ 60V 49nC @ 10V 9ns 4 ns 20V 56A Ta 120V 224A 90 mJ 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant Lead Free 2 3-WDSON No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD 3 R-MBCC-N3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 89W 12 ns 2V 40V 2.8W Ta 89W Tc 36A SWITCHING 60 ns SILICON N-Channel 1.4m Ω @ 30A, 10V 2V @ 250μA 16900pF @ 20V 196nC @ 10V 8.4ns 10 ns 20V 36A Ta 180A Tc 400A 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 3.5mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 140W Tc 78A N-Channel 3.5m Ω @ 40A, 10V 2.35V @ 100μA 5110pF @ 15V 54nC @ 4.5V 78A Tc 30V 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 7 DirectFET™ Isometric MX Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM R-XBCC-N3 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W 29 ns 2.1W Ta 113W Tc 22A SWITCHING 0.0029Ohm 115 ns SILICON P-Channel 2.9m Ω @ 22A, 10V 2.4V @ 150μA 7305pF @ 15V 130nC @ 10V 160ns 110 ns 20V -30V 22A Ta 160A Tc 30V 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 5 EAR99 5.9944mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN 838.2μm 5mm 2.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 16 ns 3.6W Ta 104W Tc 100A SWITCHING 20 ns SILICON N-Channel 2.5m Ω @ 50A, 10V 2.35V @ 100μA 3635pF @ 25V 55nC @ 10V 30ns 12 ns 20V 30V 29A 29A Ta 100A Tc 400A 4.5V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 150W 18 ns 2.8V 80V 150W Tc 80A SWITCHING 0.0054Ohm 38 ns SILICON N-Channel 5.4m Ω @ 80A, 10V 3.5V @ 90μA 4750pF @ 40V 69nC @ 10V 66ns 10 ns 20V 80A Tc 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 8.4MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W 13 ns 4V 110W Tc 79A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 4 V 79A Tc 88 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W 16 ns 2V 140W Tc 80mA SWITCHING 43 ns SILICON N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 2 V 56A 56A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2005 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 8.7mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 65W 9.1 ns 1.8V 65W Tc 24 ns 62A SWITCHING 9 ns SILICON N-Channel 8.7m Ω @ 31A, 10V 2.35V @ 25μA 1077pF @ 15V 13nC @ 4.5V 93ns 17 ns 20V 30V 30V 1.8 V 62A Tc 250A 98 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 21W Tc SWITCHING 0.6Ohm 600V SILICON N-Channel 600m Ω @ 1.7A, 10V 4V @ 80μA 363pF @ 400V 9nC @ 10V 6A Tc 600V 16A 17 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 17A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 65mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 45W 7.1 ns 2V 45W Tc 17A SWITCHING 20 ns SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 74ns 29 ns 16V 55V 55V 2 V 17A Tc 72A 68 mJ 4V 10V ±16V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 144W 15 ns 144W Tc 33A SWITCHING 0.042Ohm 25 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 35ns 20 ns 20V 150V 33A Tc 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 8.1A 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 180MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED Not Qualified 1 TO-220AB ISOLATED Single 27W 40 ns 2V 30W Tc 8.1A SWITCHING 2kV 23 ns SILICON N-Channel 180m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 35ns 22 ns 16V 100V 100V 2 V 8.1A Tc 85 mJ 4V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 170mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 80W Tc 12A N-Channel 170m Ω @ 7.2A, 10V 4.9V @ 50μA 790pF @ 50V 23nC @ 10V 12A Tc 200V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 5A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 600Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 43W 6.4 ns 4V 43W Tc 140 ns 5A SWITCHING 20 ns SILICON N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 11ns 12 ns 20V 200V 200V 4 V 5A 5A Tc 20A 46 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 1.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 19 ns 3V 230W Tc 195A SWITCHING 78 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 3.9V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 40V 3 V 195A Tc 802 mJ 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 14A No 3 HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.05mm 70MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 26W 4.9 ns 4V 29W Tc 83 ns 14A SWITCHING 19 ns SILICON N-Channel 70m Ω @ 7.8A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 14A Tc 68A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.826mm 4.8MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 75W 14 ns 75W Tc 35 ns 92A SWITCHING 16 ns SILICON N-Channel 4.8m Ω @ 40A, 10V 2.35V @ 50μA 2139pF @ 15V 23nC @ 4.5V 96ns 34 ns 20V 30V 30V 1.8 V 78A 78A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 17A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 105mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 52W 7.2 ns 2V 79W Tc 17A SWITCHING 30 ns SILICON N-Channel 105m Ω @ 10A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 100V 2 V 17A Tc 60A 150 mJ 4V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 4.5mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 83W Tc 95A N-Channel 4.5m Ω @ 57A, 10V 3.9V @ 50μA 2110pF @ 25V 68nC @ 10V 95A Tc 40V 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 3.7MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 18 ns 4V 200W Tc 42 ns 190A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 150μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 4 V 180A Tc 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 71W 12 ns 100V 71W Tc 43A SWITCHING 19 ns SILICON N-Channel 18m Ω @ 33A, 10V 3.5V @ 33μA 1800pF @ 50V 25nC @ 10V 5 ns 20V 43A Tc 50 mJ 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Lead Free Tin 64A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 94W 12 ns 4V 130W Tc 100 ns 64A SWITCHING 34 ns SILICON N-Channel 14m Ω @ 32A, 10V 4V @ 250μA 1970pF @ 25V 81nC @ 10V 78ns 50 ns 20V 55V 55V 4 V 64A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 5 DirectFET™ Isometric MX No SVHC 530μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 96W 25 ns 2.8W Ta 96W Tc 38A SWITCHING 19 ns SILICON N-Channel 1.25m Ω @ 38A, 10V 2.35V @ 150μA 6750pF @ 13V 69nC @ 4.5V 37ns 15 ns 20V 25V 1.8 V 220A 38A Ta 200A Tc 300A 290 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) Through Hole 175°C -55°C 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin -31A No 3 TO-220-3 No SVHC 2.54mm 19.3mm 4.69mm 60mOhm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) 1 1 Single 110W 14 ns -4V 60mOhm TO-220AB 110W Tc 110 ns -31A 175°C 39 ns P-Channel 60mOhm @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V -55V -4 V 31A Tc 55V 1.2nF 10V ±20V 60 mΩ