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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPA60R190C6XKSA1 IPA60R190C6XKSA1 Infineon Technologies $0.00
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    		 download 40 Weeks Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 10.36mm ROHS3 Compliant Lead Free Tin 3 TO-220-3 Full Pack No SVHC 9.45mm 4.57mm Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 NOT SPECIFIED NOT SPECIFIED 3 NO Not Qualified 1 TO-220AB ISOLATED Halogen Free Single 34W 15 ns 34W Tc 20.2A SWITCHING 0.19Ohm 110 ns SILICON N-Channel 190m Ω @ 9.5A, 10V 3.5V @ 630μA 1400pF @ 100V 63nC @ 10V 11ns 9 ns 20V 600V 3 V 20.2A Tc 59A 418 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.017mm 4.826mm 6MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 250W 20 ns 4V 250W Tc 40 ns 140A SWITCHING 55 ns SILICON N-Channel 6m Ω @ 75A, 10V 4V @ 150μA 6860pF @ 50V 170nC @ 10V 60ns 57 ns 20V 100V 100V 4 V 120A Tc 560A 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2007 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 18 ns 250V 300W Tc 64A SWITCHING 0.02Ohm 45 ns SILICON N-Channel 20m Ω @ 64A, 10V 4V @ 270μA 7100pF @ 100V 86nC @ 10V 20ns 12 ns 20V 64A Tc 256A 10V ±20V
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    		 download 18 Weeks Tube StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-247AC DRAIN 341W Tc SWITCHING 0.0017Ohm 100V SILICON N-Channel 1.7m Ω @ 100A, 10V 3.8V @ 278μA 12020pF @ 50V 270nC @ 10V 195A 100V 780A 464 mJ 6V 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 21.2W Tc SWITCHING 0.75Ohm 700V SILICON N-Channel 750m Ω @ 1.4A, 10V 3.5V @ 70μA 306pF @ 400V 8.3nC @ 400V 6.5A Tc 700V 15.4A 10V ±16V
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    		 download Through Hole Tube 2005 CoolMOS™ Not For New Designs 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 7.3A 3 TO-220-3 Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) Halogen Free 83W 6 ns 600V 600mOhm PG-TO220-3-1 83W Tc 7.3A 60 ns N-Channel 600mOhm @ 4.6A, 10V 3.9V @ 350μA 790pF @ 25V 27nC @ 10V 3.5ns 7 ns 20V 650V 7.3A Tc 650V 790pF 10V ±20V 600 mΩ
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    		 download 13 Weeks Tube 2008 OptiMOS™ no Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB 3W Ta 136W Tc SWITCHING 0.0029Ohm 60V SILICON N-Channel 2.9m Ω @ 100A, 10V 2.8V @ 75μA 4100pF @ 30V 56nC @ 10V 24A 24A Ta 100A Tc 60V 400A 110 mJ 6V 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant No 3 ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 80W 14 ns 1V 80W Tc 51A SWITCHING 25 ns SILICON N-Channel 13.5m Ω @ 31A, 10V 3V @ 250μA 1620pF @ 25V 36nC @ 5V 160ns 42 ns 16V 55V 51A Tc 204A 78 mJ 4.5V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.82mm 3.1MOhm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 19 ns 2.7V 230W Tc 39 ns 75A SWITCHING 30 ns SILICON N-Channel 3.1m Ω @ 75A, 10V 2.7V @ 250μA 5080pF @ 25V 110nC @ 5V 180ns 49 ns 16V 40V 40V 2.7 V 200A 75A Tc 790A 220 mJ 4.5V 10V ±16V
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    		 download 13 Weeks Through Hole Tube 2005 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 39W 25 ns 100V 39W Tc 64A SWITCHING 0.0045Ohm 50 ns SILICON N-Channel 4.5m Ω @ 64A, 10V 3.5V @ 150μA 8410pF @ 50V 117nC @ 10V 47ns 15 ns 20V 64A Tc 256A 540 mJ 6V 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Halogen Free 9 ns 650V 63W Tc 11A 48 ns N-Channel 225m Ω @ 4.8A, 10V 4V @ 240μA 996pF @ 400V 20nC @ 10V 6ns 10 ns 20V 11A Tc 10V ±20V
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    		 download 16 Weeks Through Hole Tube 2010 OptiMOS™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 8 ns 40V 58W Tc 70A 0.0065Ohm 7 ns SILICON N-Channel 6.5m Ω @ 70A, 10V 4V @ 26μA 2550pF @ 25V 32nC @ 10V 10ns 9 ns 20V 70A Tc 280A 72 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack, Variant No SVHC Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 3V 32W Tc 19.3A SWITCHING 0.28Ohm 600V SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V Super Junction 19.3A Tc 600V 40A 284 mJ 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 11 ns 60V 115W Tc 80A SWITCHING 0.005Ohm 56 ns SILICON N-Channel 5m Ω @ 80A, 10V 2.2V @ 58μA 8400pF @ 30V 50nC @ 4.5V 5ns 12 ns 20V 80A Tc 77 mJ 4.5V 10V ±20V
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    		 download 18 Weeks Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant AVALANCHE RATED, HIGH VOLTAGE TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 NO R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 30.5W Tc SWITCHING 800V SILICON N-Channel 2.7 Ω @ 1.2A, 10V 3.9V @ 120μA 290pF @ 100V 16nC @ 10V 2A 2A Tc 800V 6A 90 mJ 10V ±20V
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    		 download 18 Weeks Through Hole Tube 2013 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-220-3 Full Pack No SVHC Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 3V 31W Tc 15A SWITCHING 600V SILICON N-Channel 380m Ω @ 3.8A, 10V 3.5V @ 320μA 700pF @ 100V 32nC @ 10V Super Junction 15A Tc 600V 210 mJ 10V ±20V
    IPS70R1K4P7SAKMA1 IPS70R1K4P7SAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2002 CoolMOS™ P7 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-251-3 Short Leads, IPak, TO-251AA not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) 22.7W Tc N-Channel 1.4 Ω @ 700mA, 10V 3.5V @ 40μA 158pF @ 400V 4.7nC @ 10V 4A Tc 700V 10V ±16V
    IRF1010ZPBF IRF1010ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 10.54mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.69mm 7.5MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 18 ns 140W Tc 33 ns 75A SWITCHING 36 ns SILICON N-Channel 7.5m Ω @ 75A, 10V 4V @ 250μA 2840pF @ 25V 95nC @ 10V 150ns 92 ns 20V 55V 55V 4 V 75A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 150A No 3 TO-220-3 No SVHC 8.763mm 4.69mm 3.8MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 140W 18 ns 2.3V 140W Tc 63 ns 150A SWITCHING 21 ns SILICON N-Channel 3.8m Ω @ 38A, 10V 2.3V @ 250μA 4170pF @ 15V 47nC @ 4.5V 50ns 6.9 ns 20V 30V 2.3 V 75A 150A Tc 600A 560 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 99W 11 ns 3V 99W Tc 22 ns 120A SWITCHING 33 ns SILICON N-Channel 3.3m Ω @ 70A, 10V 3.9V @ 100μA 3183pF @ 25V 93nC @ 10V 34ns 23 ns 20V 40V 3 V 120A Tc 492A 6V 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 10.36mm ROHS3 Compliant Lead Free 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC 15.95mm 4.57mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB Halogen Free Single 79W 7.4 ns 1V 30V 79W Tc 70A SWITCHING 0.006Ohm 28 ns SILICON N-Channel 4.2m Ω @ 30A, 10V 2.2V @ 250μA 3900pF @ 15V 38nC @ 10V 5.6ns 4.4 ns 20V 30V 70A Tc 400A 60 mJ 4.5V 10V ±20V
    BSS225H6327FTSA1 BSS225H6327FTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2011 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 4.5mm ROHS3 Compliant Contains Lead Tin 90mA 3 LOGIC LEVEL COMPATIBLE TO-243AA 1.5mm 2.5mm Surface Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE FLAT NOT SPECIFIED NOT SPECIFIED 3 1 DRAIN Single 1W 14 ns 600V 1W Ta 90mA 62 ns SILICON N-Channel 45 Ω @ 90mA, 10V 2.3V @ 94μA 131pF @ 25V 5.8nC @ 10V 38ns 41 ns 20V 600V 0.09A 90mA Ta 4.4 pF 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ CE yes Active 3 (168 Hours) 2 ROHS3 Compliant Contains Lead TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 600V 38W Tc 2.3A SWITCHING SILICON N-Channel 2.1 Ω @ 760mA, 10V 3.5V @ 60μA 140pF @ 100V 6.7nC @ 10V 2.3A Tc 6A 11 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 EAR99 3mm ROHS3 Compliant No 8 ULTRA LOW RESISTANCE 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) 860μm 3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 1.8W 5.1 ns 1.8W Ta 5.7A SWITCHING 0.035Ohm 24 ns SILICON N-Channel 35m Ω @ 3.8A, 4.5V 700mV @ 250μA 650pF @ 15V 22nC @ 4.5V 47ns 32 ns 12V 20V 5.7A Ta 30A 2.7V 4.5V ±12V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2005 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 24A No 3 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 40mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 46W 8.9 ns 2V 68W Tc 110 ns 28A SWITCHING 21 ns SILICON N-Channel 40m Ω @ 17A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 100ns 29 ns 16V 55V 55V 2 V 28A Tc 4V 10V ±16V
    BSC079N03LSCGATMA1 BSC079N03LSCGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2004 OptiMOS™ Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Lead Free 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.5W 3 ns 2.5W Ta 30W Tc 14A SWITCHING 30V 14 ns SILICON N-Channel 7.9m Ω @ 30A, 10V 2.2V @ 250μA 1600pF @ 15V 19nC @ 10V 2.4ns 20V 14A Ta 50A Tc 30V 200A 4.5V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40W -30V 2.1W Ta 40W Tc 39.6A SWITCHING SILICON P-Channel 18m Ω @ 20A, 10V 3.1V @ 48μA 2220pF @ 15V 30nC @ 10V 11ns 25V 9A 9A Ta 39.6A Tc 30V 6V 10V ±25V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 7.3A No 8 ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 30mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 1 Single 2.5W 7 ns 1V 2.5W Tc 73 ns 7A SWITCHING 21 ns SILICON N-Channel 30m Ω @ 7.3A, 10V 1V @ 250μA 550pF @ 25V 28nC @ 10V 35ns 19 ns 20V 30V 30V 1 V 7.3A Tc 70 mJ 4.5V 10V ±20V
    BSC080N03MSGATMA1 BSC080N03MSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2002 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Tin No 8 AVALANCHE RATED 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN 35W 10 ns 2.5W Ta 35W Tc 13A SWITCHING 30V 10 ns SILICON N-Channel 8m Ω @ 30A, 10V 2V @ 250μA 2100pF @ 15V 27nC @ 10V 5.4ns 5.6 ns 20V 13A Ta 53A Tc 30V 4.5V 10V ±20V
    BSZ100N03LSGATMA1 BSZ100N03LSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 30V 2.1W Ta 30W Tc 12A SWITCHING SILICON N-Channel 10m Ω @ 20A, 10V 2.2V @ 250μA 1500pF @ 15V 17nC @ 10V 2.6ns 20V 12A Ta 40A Tc 4.5V 10V ±20V