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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRF540ZPBF IRF540ZPBF Infineon Technologies $0.00
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    		 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free 36A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.69mm 26.5Ohm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 FET General Purpose Power 1 TO-220AB 1.3V DRAIN Single 92W 15 ns 4V 92W Tc 50 ns 36A SWITCHING 43 ns SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 51ns 39 ns 20V 100V 100V 4 V 36A Tc 10V ±20V
    IRFZ34NPBF IRFZ34NPBF Infineon Technologies $0.00
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    		 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 29A No 3 TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 40mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 56W 7 ns 4V 68W Tc 86 ns 29A 175°C SWITCHING 31 ns SILICON N-Channel 40m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 49ns 40 ns 20V 55V 55V 4 V 29A Tc 65 mJ 10V ±20V
    IRF1018EPBF IRF1018EPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.017mm 4.826mm 8.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 79A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A Tc 88 mJ 10V ±20V
    IRFI540NPBF IRFI540NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6172mm ROHS3 Compliant Lead Free 20A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 TO-220AB ISOLATED Single 42W 8.2 ns 4V 54W Tc 250 ns 20A SWITCHING 0.052Ohm 2.5kV 44 ns SILICON N-Channel 52m Ω @ 11A, 10V 4V @ 250μA 1400pF @ 25V 94nC @ 10V 39ns 33 ns 20V 100V 100V 4 V 20A Tc 10V ±20V
    IRF1404STRLPBF IRF1404STRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free 162A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm 4MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 17 ns 3.8W Ta 200W Tc 162A SWITCHING 72 ns SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 140ns 26 ns 20V 40V 75A 162A Tc 650A 10V ±20V
    IRF9520NPBF IRF9520NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 175°C -55°C 10.54mm ROHS3 Compliant Lead Free Tin -6.8A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 480mOhm Through Hole -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 Other Transistors 48W 1 TO-220AB DRAIN Single 48W 14 ns -4V 150 ns -6.8A SWITCHING 28 ns P-Channel 480m Ω @ 4A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 47ns 31 ns 20V -100V -100V -4 V 6.8A Tc 100V 27A
    IPD042P03L3GATMA1 IPD042P03L3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2014 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 3 LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN -1.5V 150W Tc 70A SWITCHING 0.0068Ohm SILICON P-Channel 4.2m Ω @ 70A, 10V 2V @ 270μA 12400pF @ 15V 175nC @ 10V 70A Tc 30V 280A 269 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 SMD/SMT EAR99 10.54mm ROHS3 Compliant Contains Lead -40A No 3 HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.652mm 4.69mm 60mOhm Through Hole -55°C~150°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 Other Transistors 1 DRAIN Single 200W 14 ns 4V 3.1W Ta 170W Tc -40A SWITCHING 72 ns SILICON P-Channel 60m Ω @ 38A, 10V 4V @ 250μA 2780pF @ 25V 230nC @ 10V 63ns 55 ns 20V -100V 100V 4 V 38A Tc 10V ±20V
    BSO200P03SHXUMA1 BSO200P03SHXUMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ no Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Lead Free Tin LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free -30V 1.56W Ta 7.4A 0.02Ohm SILICON P-Channel 20m Ω @ 9.1A, 10V 1.5V @ 100μA 2330pF @ 25V 54nC @ 10V 11ns 25V 7.4A Ta 30V 36.4A 98 mJ 10V ±25V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Active 3 (168 Hours) 8 EAR99 ROHS3 Compliant Lead Free Tin 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 1.6W -30V 1.6W Ta 14.8A SWITCHING SILICON P-Channel 8m Ω @ 14.8A, 10V 3.1V @ 150μA 6750pF @ 15V 81nC @ 10V 47ns 25V 12A Ta 30V 6V 10V ±25V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 57W Tc SWITCHING 0.11Ohm 55V SILICON P-Channel 110m Ω @ 9.6A, 10V 4V @ 250μA 650pF @ 25V 32nC @ 10V 18A 18A Tc 55V 64A 150 mJ 10V ±20V
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.045Ohm 55V SILICON N-Channel 45m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 20A 27A Tc 55V 100A 65 mJ 10V ±20V
    IPD50N06S4L08ATMA2 IPD50N06S4L08ATMA2 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1999 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) 1 Halogen Free 9 ns 60V PG-TO252-3-11 71W Tc 50A 45 ns N-Channel 7.8mOhm @ 50A, 10V 2.2V @ 35μA 4780pF @ 25V 64nC @ 10V 2ns 8 ns 16V 50A Tc 60V 4.78nF 4.5V 10V ±16V 7.8 mΩ
    IRLR2905ZTRLPBF IRLR2905ZTRLPBF Infineon Technologies $0.00
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    		 download 10 Weeks Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.0135Ohm 55V SILICON N-Channel 13.5m Ω @ 36A, 10V 3V @ 250μA 1570pF @ 25V 35nC @ 5V 42A 42A Tc 55V 240A 85 mJ 4.5V 10V ±16V
    IRFR540ZTRPBF IRFR540ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 91W 14 ns 91W Tc 35A SWITCHING 0.0285Ohm 43 ns SILICON N-Channel 28.5m Ω @ 21A, 10V 4V @ 50μA 1690pF @ 25V 59nC @ 10V 42ns 34 ns 20V 100V 35A Tc 140A 10V ±20V
    IPS65R400CEAKMA1 IPS65R400CEAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks 2013 yes Active 3 (168 Hours) EAR99 150°C -55°C ROHS3 Compliant Contains Lead not_compliant e3 Tin (Sn) Halogen Free 650V 650V
    BUZ30AHXKSA1 BUZ30AHXKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 SIPMOS® yes Last Time Buy 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free Tin No AVALANCHE RATED TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 SINGLE 3 R-PSFM-T3 1 SINGLE TO-220AB Halogen Free 125W 200V 125W Tc 21A SILICON N-Channel 130m Ω @ 13.5A, 10V 4V @ 1mA 1900pF @ 25V 70ns 20V 21A Tc 84A 450 mJ 10V ±20V
    BSC024NE2LSATMA1 BSC024NE2LSATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN No SVHC not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 4.1 ns 2V 25V 2.5W Ta 48W Tc 25A SWITCHING 0.0034Ohm 19 ns SILICON N-Channel 2.4m Ω @ 30A, 10V 2V @ 250μA 1700pF @ 12V 23nC @ 10V 3.6ns 2.6 ns 20V 25A Ta 100A Tc 400A 40 mJ 4.5V 10V ±20V
    IPB081N06L3GATMA1 IPB081N06L3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 79W 15 ns 1.7V 60V 79W Tc 50A SWITCHING 37 ns SILICON N-Channel 8.1m Ω @ 50A, 10V 2.2V @ 34μA 4900pF @ 30V 29nC @ 4.5V 26ns 7 ns 20V 50A Tc 200A 4.5V 10V ±20V
    IRF2807STRLPBF IRF2807STRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2002 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 82A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 170W 13 ns 4V 230W Tc 150 ns 82A SWITCHING 49 ns SILICON N-Channel 13m Ω @ 43A, 10V 4V @ 250μA 3820pF @ 25V 160nC @ 10V 64ns 48 ns 20V 75V 75V 4 V 75A 82A Tc 280A 10V ±20V
    AUIRFB3207 AUIRFB3207 Infineon Technologies $0.00
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    		 download 11 Weeks Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.66mm RoHS Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 300W 29 ns 2V 300W Tc 75A SWITCHING 0.0045Ohm 68 ns SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7600pF @ 50V 260nC @ 10V 120ns 74 ns 20V 75V 75A Tc 720A 10V ±20V
    AUIRFR48Z AUIRFR48Z Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 11MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 91W 15 ns 2V 91W Tc 42A SWITCHING 40 ns SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 50μA 1720pF @ 25V 60nC @ 10V 61ns 35 ns 20V 55V 42A Tc 250A 10V ±20V
    AUIRL3705ZS AUIRL3705ZS Infineon Technologies $0.00
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    		 download Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 130W 17 ns 130W Tc 75A SWITCHING 26 ns SILICON N-Channel 8m Ω @ 52A, 10V 3V @ 250μA 2880pF @ 25V 60nC @ 5V 240ns 83 ns 16V 55V 75A Tc 4.5V 10V ±16V
    AUIRLR024N AUIRLR024N Infineon Technologies $0.00
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    		 download Surface Mount Tube 2006 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 7.1 ns 1V 45W Tc 17A SWITCHING 0.08Ohm 20 ns SILICON N-Channel 65m Ω @ 10A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 74ns 29 ns 16V 55V 17A Tc 72A 68 mJ 4V 10V ±16V
    AUIRFZ44ZS AUIRFZ44ZS Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 11.3mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 80W 14 ns 2V 80W Tc 51A SWITCHING 33 ns SILICON N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 51A Tc 200A 10V ±20V
    IRL6342PBF IRL6342PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant No 8 HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 6 ns 1.1V 2.5W Ta 20 ns 9.9A 150°C SWITCHING 33 ns SILICON N-Channel 14.6m Ω @ 9.9A, 4.5V 1.1V @ 10μA 1025pF @ 25V 11nC @ 4.5V 12ns 14 ns 12V 30V 1.1 V 9.9A Ta 79A 2.5V 4.5V ±12V
    AUIRF1324S AUIRF1324S Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Tin No 3 ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 Single 300W 17 ns 2V 300W Tc 195A SWITCHING 83 ns SILICON N-Channel 1.65m Ω @ 195A, 10V 4V @ 250μA 7590pF @ 24V 240nC @ 10V 190ns 120 ns 20V 24V 195A Tc 270 mJ 10V ±20V
    IPW65R280E6FKSA1 IPW65R280E6FKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 R-PSFM-T3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 104W 11 ns 650V 104W Tc 13.8A SWITCHING 0.28Ohm 76 ns SILICON N-Channel 280m Ω @ 4.4A, 10V 3.5V @ 440μA 950pF @ 100V 45nC @ 10V 9ns 20V 13.8A Tc 39A 290 mJ 10V ±20V
    IPD60R1K4C6 IPD60R1K4C6 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2011 CoolMOS™ yes Discontinued 1 (Unlimited) 2 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 28.4W Tc SWITCHING 600V SILICON N-Channel 1.4 Ω @ 1.1A, 10V 3.5V @ 90μA 200pF @ 100V 9.4nC @ 10V 3.2A 3.2A Tc 600V 8A 26 mJ 10V ±20V
    IPA60R520E6XKSA1 IPA60R520E6XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 12 ns 600V 29W Tc 8.1A SWITCHING 0.52Ohm 75 ns SILICON N-Channel 520m Ω @ 2.8A, 10V 3.5V @ 230μA 512pF @ 100V 23.4nC @ 10V 10ns 9 ns 20V 8.1A Tc 22A 10V ±20V