Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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AUIRFR5305TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2014 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W | 14 ns | 110W Tc | 31A | SWITCHING | 0.065Ohm | 39 ns | SILICON | P-Channel | 65m Ω @ 16A, 10V | 4V @ 250μA | 1200pF @ 25V | 63nC @ 10V | 66ns | 63 ns | 20V | -55V | 31A Tc | 55V | 280 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF9540NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | Tin | -23A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 117mOhm | Through Hole | -55°C~150°C TJ | -100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 250 | 30 | Other Transistors | 1 | TO-220AB | DRAIN | Single | 140W | 15 ns | -4V | 140W Tc | 220 ns | -23A | SWITCHING | 51 ns | SILICON | P-Channel | 117m Ω @ 11A, 10V | 4V @ 250μA | 1300pF @ 25V | 97nC @ 10V | 67ns | 51 ns | 20V | -100V | -100V | -4 V | 23A Tc | 100V | 76A | 10V | ±20V | ||||||||||||||||||||||||||||
BSC030P03NS3GAUMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | OptiMOS™ | no | Active | 3 (168 Hours) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 27 ns | -30V | 2.5W Ta 125W Tc | -25.4A | 150°C | SWITCHING | 0.0046Ohm | 98 ns | SILICON | P-Channel | 3m Ω @ 50A, 10V | 3.1V @ 345μA | 14000pF @ 15V | 186nC @ 10V | 105ns | 33 ns | 25V | -30V | 25.4A Ta 100A Tc | 30V | 200A | 345 mJ | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||
IPD200N15N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 150W | 14 ns | 150V | 150W Tc | 50A | SWITCHING | 0.02Ohm | 23 ns | SILICON | N-Channel | 20m Ω @ 50A, 10V | 4V @ 90μA | 1820pF @ 75V | 31nC @ 10V | 11ns | 6 ns | 20V | 50A Tc | 200A | 170 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSC014N04LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Cut Tape (CT) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 16 ns | 2V | 40V | 2.5W Ta 96W Tc | 100A | 150°C | SWITCHING | 0.002Ohm | 55 ns | SILICON | N-Channel | 1.45m Ω @ 50A, 10V | 2V @ 250μA | 4000pF @ 20V | 55nC @ 10V | 20V | 40V | 31A Ta 100A Tc | 400A | 90 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFZ44EPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1999 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 48A | 3 | HIGH RELIABILITY, AVALANCHE RATED | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | 23mOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 250 | 30 | Not Qualified | 1 | TO-220AB | DRAIN | Single | 110W | 12 ns | 4V | 110W Tc | 48A | SWITCHING | 70 ns | SILICON | N-Channel | 23m Ω @ 29A, 10V | 4V @ 250μA | 1360pF @ 25V | 60nC @ 10V | 60ns | 20V | 60V | 60V | 4 V | 48A Tc | 220 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
BSC320N20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 200V | 125W Tc | 36A | SWITCHING | 0.032Ohm | SILICON | N-Channel | 32m Ω @ 36A, 10V | 4V @ 90μA | 2350pF @ 100V | 29nC @ 10V | 9ns | 20V | 36A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC010N04LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | ULTRA LOW RESISTANCE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 40V | 2.5W Ta 139W Tc | 100A | 72 ns | SILICON | N-Channel | 1.05m Ω @ 50A, 10V | 2V @ 250μA | 6200pF @ 20V | 87nC @ 10V | 48ns | 17 ns | 20V | 40V | Schottky Diode (Body) | 37A | 37A Ta 100A Tc | 400A | 230 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSC026N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 156W | 18 ns | 3V | 80V | 2.5W Ta 156W Tc | 100A | 150°C | SWITCHING | 0.0026Ohm | 47 ns | SILICON | N-Channel | 2.6m Ω @ 50A, 10V | 3.8V @ 115μA | 6800pF @ 40V | 92nC @ 10V | 14ns | 16 ns | 20V | 80V | 23A | 23A Ta 100A Tc | 400A | 370 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
IRF1407STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 7.8mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 11 ns | 4V | 3.8W Ta 200W Tc | 100A | SWITCHING | 150 ns | SILICON | N-Channel | 7.8m Ω @ 78A, 10V | 4V @ 250μA | 5600pF @ 25V | 250nC @ 10V | 150ns | 140 ns | 20V | 75V | 75V | 4 V | 75A | 100A Tc | 520A | 10V | ±20V | ||||||||||||||||||||||||||||||
IRL3713STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Not For New Designs | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 3MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 330W | 16 ns | 2.5V | 330W Tc | 260A | SWITCHING | 40 ns | SILICON | N-Channel | 3m Ω @ 38A, 10V | 2.5V @ 250μA | 5890pF @ 15V | 110nC @ 4.5V | 160ns | 57 ns | 20V | 30V | 30V | 2.5 V | 75A | 260A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IPB120P04P4L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Cut Tape (CT) | 2011 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 4.7mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 136W | 21 ns | -1.7V | -40V | 136W Tc | -120A | 175°C | 0.0052Ohm | 85 ns | SILICON | P-Channel | 3.1m Ω @ 100A, 10V | 2.2V @ 340μA | 15000pF @ 25V | 234nC @ 10V | 16ns | 57 ns | 16V | -40V | 120A Tc | 40V | 480A | 78 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
IPD034N06N3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Halogen Free | 167W | 38 ns | 60V | 167W Tc | 100A | SWITCHING | 63 ns | SILICON | N-Channel | 3.4m Ω @ 100A, 10V | 4V @ 93μA | 11000pF @ 30V | 130nC @ 10V | 161ns | 16 ns | 20V | 100A Tc | 400A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSC123N10LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 114W | 100V | 114W Tc | 10.6A | SWITCHING | SILICON | N-Channel | 12.3m Ω @ 50A, 10V | 2.4V @ 72μA | 4900pF @ 50V | 68nC @ 10V | 25ns | 20V | 10.6A Ta 71A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRLR3110ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.52mm | 6.22mm | 14MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W | 24 ns | 140W Tc | 42A | 175°C | SWITCHING | 33 ns | SILICON | N-Channel | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 3980pF @ 25V | 48nC @ 4.5V | 110ns | 48 ns | 16V | 100V | 42A Tc | 250A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
BSC16DN25NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 62.5W | 250V | 62.5W Tc | 10.9A | SWITCHING | SILICON | N-Channel | 165m Ω @ 5.5A, 10V | 4V @ 32μA | 920pF @ 100V | 11.4nC @ 10V | 4ns | 20V | 10.9A Tc | 44A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF640NSTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Contains Lead, Lead Free | 18A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 5.084mm | 9.65mm | 150mOhm | Surface Mount | -55°C~175°C TJ | 200V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 150W | 10 ns | 4V | 150W Tc | 251 ns | 18A | 175°C | SWITCHING | 23 ns | SILICON | N-Channel | 150m Ω @ 11A, 10V | 4V @ 250μA | 1160pF @ 25V | 67nC @ 10V | 19ns | 5.5 ns | 20V | 200V | 200V | 4 V | 18A Tc | 72A | 247 mJ | 10V | ±20V | ||||||||||||||||||||||||||
IRF7480MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Lead Free | 10 | DirectFET™ Isometric ME | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | R-XBCC-N6 | 1 | 1 | DRAIN | Single | 21 ns | 96W Tc | 217A | SWITCHING | 40V | 68 ns | SILICON | N-Channel | 1.2m Ω @ 132A, 10V | 3.9V @ 150μA | 6680pF @ 25V | 185nC @ 10V | 70ns | 58 ns | 20V | 217A Tc | 40V | 868A | 206 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSC057N08NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 80V | 2.5W Ta 114W Tc | 16A | SWITCHING | 0.0057Ohm | SILICON | N-Channel | 5.7m Ω @ 50A, 10V | 3.5V @ 73μA | 3900pF @ 40V | 56nC @ 10V | 14ns | 20V | 16A Ta 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSZ130N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | NO LEAD | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25W | 30V | 2.1W Ta 25W Tc | 35A | SWITCHING | 0.013Ohm | SILICON | N-Channel | 13m Ω @ 20A, 10V | 2.2V @ 250μA | 970pF @ 15V | 13nC @ 10V | 2.6ns | 20V | 10A Ta 35A Tc | 140A | 9 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFL4310TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | Tin | 1.6A | No | 3 | HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.8mm | 3.7mm | 200mOhm | Surface Mount | -55°C~150°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 2.1W | 100V | 7.8 ns | 2V | 1W Ta | 110 ns | 1.6A | 150°C | SWITCHING | 34 ns | SILICON | N-Channel | 200m Ω @ 1.6A, 10V | 4V @ 250μA | 330pF @ 25V | 25nC @ 10V | 18ns | 20 ns | 20V | 100V | 4 V | 2.2A | 1.6A Ta | 10V | ±20V | |||||||||||||||||||||||||||
IRLL024ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-261-4, TO-261AA | 1.4478mm | 3.7mm | 60MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | DRAIN | Single | 2.8W | 8.6 ns | 1W Ta | 5A | SWITCHING | 20 ns | SILICON | N-Channel | 60m Ω @ 3A, 10V | 3V @ 250μA | 380pF @ 25V | 11nC @ 5V | 33ns | 15 ns | 16V | 55V | 5A | 5A Tc | 40A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
IRFL024ZTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 4 | EAR99 | 6.6802mm | ROHS3 Compliant | Contains Lead, Lead Free | 1A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-261-4, TO-261AA | No SVHC | 1.4478mm | 3.7mm | 57.5MOhm | Surface Mount | -55°C~150°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | R-PDSO-G4 | 1 | DRAIN | Single | 2.8W | 7.8 ns | 4V | 1W Ta | 5.1A | SWITCHING | 30 ns | SILICON | N-Channel | 57.5m Ω @ 3.1A, 10V | 4V @ 250μA | 340pF @ 25V | 14nC @ 10V | 21ns | 23 ns | 20V | 55V | 55V | 4 V | 5.1A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||
BSP171PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2005 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | No | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | No SVHC | 1.6mm | 6.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 19A | e3 | DUAL | GULL WING | 4 | Other Transistors | 60V | 1 | DRAIN | Halogen Free | Single | 1.8W | 6 ns | 1.5V | -60V | 1.8W Ta | 1.45A | 0.3Ohm | 208 ns | SILICON | P-Channel | 300m Ω @ 1.9A, 10V | 2V @ 460μA | 460pF @ 25V | 20nC @ 10V | 25ns | 87 ns | 20V | 60V | -60V | 1.5 V | 1.9A Ta | 55 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IRF7416TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -10A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 20mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | 1 | 6.3 mm | Single | 2.5W | 18 ns | -2.04V | 2.5W Ta | 85 ns | -10A | 150°C | SWITCHING | 59 ns | SILICON | P-Channel | 20m Ω @ 5.6A, 10V | 1V @ 250μA | 1700pF @ 25V | 92nC @ 10V | 49ns | 60 ns | 20V | -30V | -30V | -20 V | 10A Ta | 30V | 45A | 370 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
BSZ440N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 29W | 4.3 ns | 100V | 29W Tc | 5.3A | SWITCHING | 0.044Ohm | 9.1 ns | SILICON | N-Channel | 44m Ω @ 12A, 10V | 2.7V @ 12μA | 640pF @ 50V | 9.1nC @ 10V | 1.8ns | 2 ns | 20V | 5.3A Ta 18A Tc | 72A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSP295H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2001 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-261-4, TO-261AA | No SVHC | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 4 | R-PDSO-G4 | 1 | DRAIN | Halogen Free | Single | 1.5W | 5.4 ns | 1.1V | 60V | 1.8W Ta | 1.8A | 0.5Ohm | 27 ns | SILICON | N-Channel | 300m Ω @ 1.8A, 10V | 1.8V @ 400μA | 368pF @ 25V | 17nC @ 10V | 9.9ns | 19 ns | 20V | 60V | 60V | 1.1 V | 1.8A Ta | 7.2A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
BSC030N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 7.3 ns | 30V | 2.5W Ta 69W Tc | 23A | SWITCHING | 0.0047Ohm | 29 ns | SILICON | N-Channel | 3m Ω @ 30A, 10V | 2.2V @ 250μA | 4300pF @ 15V | 55nC @ 10V | 5.2ns | 4.8 ns | 20V | 23A Ta 100A Tc | 400A | 75 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSZ110N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | 1 | DRAIN | Halogen Free | Single | 9 ns | 80V | 50W Tc | 40A | SWITCHING | 15 ns | SILICON | N-Channel | 11m Ω @ 20A, 10V | 3.8V @ 22μA | 1300pF @ 40V | 18.5nC @ 10V | 3ns | 3 ns | 20V | 80V | 40A Tc | 40 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSZ100N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 8 ns | 60V | 2.1W Ta 50W Tc | 11A | SWITCHING | 19 ns | SILICON | N-Channel | 10m Ω @ 20A, 10V | 2.2V @ 23μA | 3500pF @ 30V | 45nC @ 10V | 58ns | 20V | 20A | 11A Ta 20A Tc | 55 mJ | 4.5V 10V | ±20V |
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