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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPD90R1K2C3ATMA1 IPD90R1K2C3ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 83W 70 ns 900V 1.2Ohm PG-TO252-3 83W Tc 5.1A 400 ns N-Channel 1.2Ohm @ 2.8A, 10V 3.5V @ 310μA 710pF @ 100V 28nC @ 10V 20ns 40 ns 30V 5.1A Tc 900V 710pF 10V ±20V 1.2 Ω
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 1.8mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 6.3W 12 ns 6.3W Tc 4.5A 150°C SWITCHING 60 ns SILICON N-Channel 1.2 Ω @ 900mA, 10V 3.5V @ 40μA 174pF @ 400V 4.8nC @ 10V 16V 700V 4.5A Tc 10V ±16V
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2012 SIPMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 3 TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE 360mW Ta 170mA 6Ohm 100V SILICON N-Channel 6 Ω @ 170mA, 10V 1.8V @ 50μA 68pF @ 10V 2.8nC @ 7V 2.7ns 20V Depletion Mode 0.17A 170mA Ta 100V 7 pF 0V 10V ±20V
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    		 download 18 Weeks Tape & Reel (TR) 2014 CoolMOS™ P7 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-261-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G3 1 SINGLE WITH BUILT-IN DIODE DRAIN 7W Tc SWITCHING 800V SILICON N-Channel 1.4 Ω @ 1.4A, 10V 3.5V @ 70μA 250pF @ 500V 10nC @ 10V 4A Tc 800V 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 10 ns 60V 2.1W Ta 50W Tc 20A SWITCHING 14 ns SILICON N-Channel 11m Ω @ 20A, 10V 4V @ 23μA 2700pF @ 30V 33nC @ 10V 77ns 6 ns 20V 20A Tc 55 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free -14A No 3 HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 93MOhm Through Hole -40°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 TO-220AB ISOLATED Single 33W 9.5 ns -1V 33W Tc -14A SWITCHING 21 ns SILICON P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 660pF @ 50V 47nC @ 10V 24ns 9.5 ns 20V -55V -55V -1 V 14A Tc 55V 60A 4.5V 10V ±20V
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    		 download 10 Weeks Through Hole Bulk 1997 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 53A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 20.7mm 5.3086mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 250 30 1 FET General Purpose Power 1 TO-247AC DRAIN Single 100W 12 ns 4V 120W Tc 110 ns 53A SWITCHING 0.02Ohm 43 ns SILICON N-Channel 20m Ω @ 29A, 10V 4V @ 250μA 1500pF @ 25V 61nC @ 10V 80ns 52 ns 20V 55V 55V 4 V 49A 53A Tc 10V ±20V
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    		 download 10 Weeks Tape & Reel (TR) 2013 OptiMOS™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED Halogen Free 75V 300W Tc N-Channel 6.8m Ω @ 80A, 10V 2V @ 250μA 5400pF @ 25V 233nC @ 10V 80A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 10.54mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 8.77mm 4.69mm 3.7Ohm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 1 TO-220AB DRAIN Single 220W 18 ns 4V 200W Tc 42 ns 190A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 250μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 40V 4 V 180A Tc 750A 480 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Lead Free 59A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.69mm 18MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 250 30 1 FET General Purpose Power 1 TO-220AB DRAIN Single 160W 17 ns 4V 50 ns 160W Tc 75 ns 59A 175°C SWITCHING 41 ns SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 77ns 56 ns 20V 100V 100V 4 V 59A Tc 240A 200 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC 5.084mm 9.65mm Surface Mount 1.59999g -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power Single 375W 28 ns 2.2V 375W Tc 240A 175°C 161 ns N-Channel 0.75m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 79ns 93 ns 20V 40V 522A 240A Tc 6V 10V ±20V
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 26W Tc SWITCHING 0.18Ohm 600V SILICON N-Channel 180m Ω @ 5.6A, 10V 4V @ 280μA 1081pF @ 400V 25nC @ 10V 18A Tc 600V 53A 56 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® yes Active 1 (Unlimited) 6 EAR99 175°C -55°C ROHS3 Compliant No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN 380W 71 ns 380W Tc 240A SWITCHING 0.0014Ohm 94 ns N-Channel 1.4m Ω @ 200A, 10V 2.5V @ 250μA 10990pF @ 40V 180nC @ 4.5V 590ns 200 ns 20V 40V 240A Tc 1540A 250 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin 162A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 19.8mm 4.826mm 4mOhm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 333W 17 ns 4V 333W Tc 117 ns 202A 175°C SWITCHING 46 ns SILICON N-Channel 4m Ω @ 121A, 10V 4V @ 250μA 5669pF @ 25V 196nC @ 10V 190ns 33 ns 20V 40V 40V 4 V 75A 202A Tc 808A 620 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2004 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 8.1A 3 AVALANCHE RATED TO-220-3 Full Pack No SVHC 9.8mm 4.826mm 180MOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier NOT SPECIFIED NOT SPECIFIED Not Qualified 1 TO-220AB ISOLATED Single 27W 40 ns 2V 30W Tc 8.1A SWITCHING 2kV 23 ns SILICON N-Channel 180m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 35ns 22 ns 16V 100V 100V 2 V 8.1A Tc 85 mJ 4V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 170mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 80W Tc 12A N-Channel 170m Ω @ 7.2A, 10V 4.9V @ 50μA 790pF @ 50V 23nC @ 10V 12A Tc 200V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free 5A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 600Ohm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 43W 6.4 ns 4V 43W Tc 140 ns 5A SWITCHING 20 ns SILICON N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 11ns 12 ns 20V 200V 200V 4 V 5A 5A Tc 20A 46 mJ 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 1.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 230W 19 ns 3V 230W Tc 195A SWITCHING 78 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 3.9V @ 150μA 7330pF @ 25V 225nC @ 10V 70ns 53 ns 20V 40V 3 V 195A Tc 802 mJ 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6172mm ROHS3 Compliant Lead Free 14A No 3 HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.05mm 70MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 26W 4.9 ns 4V 29W Tc 83 ns 14A SWITCHING 19 ns SILICON N-Channel 70m Ω @ 7.8A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 55V 4 V 14A Tc 68A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-220-3 No SVHC 16.51mm 4.826mm 4.8MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 75W 14 ns 75W Tc 35 ns 92A SWITCHING 16 ns SILICON N-Channel 4.8m Ω @ 40A, 10V 2.35V @ 50μA 2139pF @ 15V 23nC @ 4.5V 96ns 34 ns 20V 30V 30V 1.8 V 78A 78A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 17A No 3 AVALANCHE RATED, ULTRA LOW RESISTANCE TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 105mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 52W 7.2 ns 2V 79W Tc 17A SWITCHING 30 ns SILICON N-Channel 105m Ω @ 10A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 100V 2 V 17A Tc 60A 150 mJ 4V 10V ±16V
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    		 download 12 Weeks Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 ROHS3 Compliant Lead Free TO-220-3 4.5mOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 83W Tc 95A N-Channel 4.5m Ω @ 57A, 10V 3.9V @ 50μA 2110pF @ 25V 68nC @ 10V 95A Tc 40V 6V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 3.7MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 200W 18 ns 4V 200W Tc 42 ns 190A SWITCHING 36 ns SILICON N-Channel 3.7m Ω @ 75A, 10V 4V @ 150μA 4340pF @ 25V 150nC @ 10V 110ns 58 ns 20V 40V 4 V 180A Tc 10V ±20V
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 71W 12 ns 100V 71W Tc 43A SWITCHING 19 ns SILICON N-Channel 18m Ω @ 33A, 10V 3.5V @ 33μA 1800pF @ 50V 25nC @ 10V 5 ns 20V 43A Tc 50 mJ 6V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2001 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Lead Free Tin 64A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 FET General Purpose Power 1 TO-220AB DRAIN Single 94W 12 ns 4V 130W Tc 100 ns 64A SWITCHING 34 ns SILICON N-Channel 14m Ω @ 32A, 10V 4V @ 250μA 1970pF @ 25V 81nC @ 10V 78ns 50 ns 20V 55V 55V 4 V 64A Tc 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2012 HEXFET® Active 1 (Unlimited) 3 EAR99 6.35mm ROHS3 Compliant No 5 DirectFET™ Isometric MX No SVHC 530μm 5.05mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 96W 25 ns 2.8W Ta 96W Tc 38A SWITCHING 19 ns SILICON N-Channel 1.25m Ω @ 38A, 10V 2.35V @ 150μA 6750pF @ 13V 69nC @ 4.5V 37ns 15 ns 20V 25V 1.8 V 220A 38A Ta 200A Tc 300A 290 mJ 4.5V 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) Through Hole 175°C -55°C 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin -31A No 3 TO-220-3 No SVHC 2.54mm 19.3mm 4.69mm 60mOhm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) 1 1 Single 110W 14 ns -4V 60mOhm TO-220AB 110W Tc 110 ns -31A 175°C 39 ns P-Channel 60mOhm @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 66ns 63 ns 20V -55V -55V -4 V 31A Tc 55V 1.2nF 10V ±20V 60 mΩ
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 7 DirectFET™ Isometric MX Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) BOTTOM R-XBCC-N3 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W 29 ns 2.1W Ta 113W Tc 22A SWITCHING 0.0029Ohm 115 ns SILICON P-Channel 2.9m Ω @ 22A, 10V 2.4V @ 150μA 7305pF @ 15V 130nC @ 10V 160ns 110 ns 20V -30V 22A Ta 160A Tc 30V 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 5 EAR99 5.9944mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN 838.2μm 5mm 2.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL R-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.6W 16 ns 3.6W Ta 104W Tc 100A SWITCHING 20 ns SILICON N-Channel 2.5m Ω @ 50A, 10V 2.35V @ 100μA 3635pF @ 25V 55nC @ 10V 30ns 12 ns 20V 30V 29A 29A Ta 100A Tc 400A 4.5V 10V ±20V
    IPDD60R102G7XTMA1 IPDD60R102G7XTMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) CoolMOS™ G7 Active 1 (Unlimited) ROHS3 Compliant 10-PowerSOP Module Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 139W Tc N-Channel 102m Ω @ 7.8A, 10V 4V @ 390μA 1320pF @ 400V 34nC @ 10V 23A Tc 600V 10V ±20V