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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Power Rating JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count JESD-30 Code Number of Channels Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Polarity/Channel Type Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    BSL215CH6327XTSA1 BSL215CH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free 6 AVALANCHE RATED SOT-23-6 Thin, TSOT-23-6 No SVHC 1.1mm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING 2 500mW 2 Halogen Free N-CHANNEL AND P-CHANNEL 500mW -900μV -20V 1.5A SWITCHING 0.14Ohm METAL-OXIDE SEMICONDUCTOR SILICON N and P-Channel Complementary 140m Ω @ 1.5A, 4.5V 1.2V @ 3.7μA 143pF @ 10V 0.73nC @ 4.5V 12V Logic Level Gate, 2.5V Drive 20V 9 pF
    IPB65R150CFDATMA1 IPB65R150CFDATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Cut Tape (CT) 2008 CoolMOS™ no Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.7mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 195.3W 12.4 ns 650V 195.3W Tc 22.4A 150°C SWITCHING 52.8 ns SILICON N-Channel 150m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 7.6ns 5.6 ns 20V 650V 22.4A Tc 72A 10V ±20V
    IRFB4615PBF IRFB4615PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.826mm 39MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 144W 15 ns 3V 144W Tc 35A SWITCHING 25 ns SILICON N-Channel 39m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 26nC @ 10V 35ns 20 ns 20V 150V 150V 3 V 35A Tc 10V ±20V
    IRFS3004TRL7PP IRFS3004TRL7PP Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 1.25MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G6 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 380W 23 ns 380W Tc 240A SWITCHING 91 ns SILICON N-Channel 1.25m Ω @ 195A, 10V 4V @ 250μA 9130pF @ 25V 240nC @ 10V 240ns 160 ns 20V 40V 3.7 V 240A Tc 290 mJ 10V ±20V
    IRL2505PBF IRL2505PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free 104A 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-220-3 No SVHC 15.24mm 4.69mm 8mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 200W 12 ns 2V 200W Tc 210 ns 104A SWITCHING 43 ns SILICON N-Channel 8m Ω @ 54A, 10V 2V @ 250μA 5000pF @ 25V 130nC @ 5V 160ns 84 ns 16V 55V 55V 2 V 90A 104A Tc 500 mJ 4V 10V ±16V
    IRF7779L2TRPBF IRF7779L2TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 9 EAR99 9.144mm ROHS3 Compliant Lead Free No 11 DirectFET™ Isometric L8 No SVHC 508μm 7.1mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N9 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 125W 16 ns 4V 3.3W Ta 125W Tc 11A SWITCHING 36 ns SILICON N-Channel 11m Ω @ 40A, 10V 5V @ 250μA 6660pF @ 25V 150nC @ 10V 19ns 12 ns 20V 150V 67A 375A Tc 270A 270 mJ 10V ±20V
    IRFP064NPBF IRFP064NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.875mm ROHS3 Compliant Lead Free 110A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-247-3 No SVHC 5.45mm 24.99mm 5.3mm 8MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-247AC DRAIN Single 150W 14 ns 4V 200W Tc 170 ns 110A 175°C SWITCHING 43 ns SILICON N-Channel 8m Ω @ 59A, 10V 4V @ 250μA 4000pF @ 25V 170nC @ 10V 100ns 70 ns 20V 55V 55V 4 V 98A 110A Tc 480 mJ 10V ±20V
    IPP600N25N3GXKSA1 IPP600N25N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 136W 10 ns 250V 136W Tc 25A SWITCHING 0.06Ohm 22 ns SILICON N-Channel 60m Ω @ 25A, 10V 4V @ 90μA 2350pF @ 100V 29nC @ 10V 8 ns 20V 25A Tc 10V ±20V
    IRLB4030PBF IRLB4030PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 15.24mm 4.69mm 4.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB Single 370W 74 ns 2.5V 370W Tc 180A SWITCHING 110 ns SILICON N-Channel 4.3m Ω @ 110A, 10V 2.5V @ 250μA 11360pF @ 50V 130nC @ 4.5V 330ns 170 ns 16V 100V 100V 2.5 V 180A Tc 4.5V 10V ±16V
    IRFB4332PBF IRFB4332PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.66mm ROHS3 Compliant Lead Free 60A No 3 TO-220-3 No SVHC 19.8mm 4.82mm 33MOhm Through Hole -40°C~175°C TJ 250V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 390W 5V 390W Tc 290 ns 60A 175°C SWITCHING SILICON N-Channel 33m Ω @ 35A, 10V 5V @ 250μA 5860pF @ 25V 150nC @ 10V 30V 250V 250V 5 V 60A Tc 10V ±30V
    IPB072N15N3GATMA1 IPB072N15N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 25 ns 150V 300W Tc 100A SWITCHING 0.0072Ohm 46 ns SILICON N-Channel 7.2m Ω @ 100A, 10V 4V @ 270μA 5470pF @ 75V 93nC @ 10V 35ns 14 ns 20V 100A Tc 400A 780 mJ 8V 10V ±20V
    IRFP4710PBF IRFP4710PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 EAR99 15.875mm ROHS3 Compliant Lead Free 72A No 3 TO-247-3 No SVHC 20.2946mm 5.3mm 14Ohm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 190W 35 ns 5.5V 190W Tc 110 ns 72A SWITCHING 41 ns SILICON N-Channel 14m Ω @ 45A, 10V 5.5V @ 250μA 6160pF @ 25V 170nC @ 10V 130ns 38 ns 20V 100V 100V 5.5 V 72A Tc 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 18 ns 200V 300W Tc 88A SWITCHING 41 ns SILICON N-Channel 10.7m Ω @ 88A, 10V 4V @ 270μA 7100pF @ 100V 87nC @ 10V 26ns 11 ns 20V 88A Tc 560 mJ 10V ±20V
    AUIRFSA8409-7P AUIRFSA8409-7P Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2016 Automotive, AEC-Q101, HEXFET® Not For New Designs 1 (Unlimited) 6 EAR99 ROHS3 Compliant TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W Tc 523A SWITCHING 0.00069Ohm 40V SILICON N-Channel 0.69m Ω @ 100A, 10V 3.9V @ 250μA 13975pF @ 25V 460nC @ 10V 360A 523A Tc 40V 1440A 1450 mJ 10V ±20V
    IRFP4468PBF IRFP4468PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free Tin 3 TO-247-3 No SVHC 24.99mm 5.3086mm 2.6MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 1 FET General Purpose Power Not Qualified 1 TO-247AC DRAIN Single 520W 52 ns 4V 520W Tc 290A 175°C SWITCHING 160 ns SILICON N-Channel 2.6m Ω @ 180A, 10V 4V @ 250μA 19860pF @ 50V 540nC @ 10V 230ns 260 ns 20V 100V 100V 4 V 195A Tc 740 mJ 10V ±20V
    IPA60R099C6XKSA1 IPA60R099C6XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 35W 15 ns 600V 35W Tc 37.9A SWITCHING 0.099Ohm 75 ns SILICON N-Channel 99m Ω @ 18.1A, 10V 3.5V @ 1.21mA 2660pF @ 100V 119nC @ 10V 12ns 6 ns 20V 37.9A Tc 796 mJ 10V ±20V
    IRLHS6376TRPBF IRLHS6376TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 6 6-VDFN Exposed Pad No SVHC Surface Mount -55°C~150°C TJ ENHANCEMENT MODE e3 Matte Tin (Sn) IRLHS6376 FET General Purpose Power 1.5W 2 DRAIN Dual 1.5W 4.4 ns 800mV 3.6A SWITCHING 0.082Ohm METAL-OXIDE SEMICONDUCTOR 11 ns SILICON 2 N-Channel (Dual) 63m Ω @ 3.4A, 4.5V 1.1V @ 10μA 270pF @ 25V 2.8nC @ 4.5V 11ns 9.4 ns 12V 30V Logic Level Gate 800 mV 3.4A 30V
    IRF9952TRPBF IRF9952TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 3.5A No 8 HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 100mOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE DUAL GULL WING IRF9952PBF 2W 2 N-CHANNEL AND P-CHANNEL 2W 1V 3.5A SWITCHING METAL-OXIDE SEMICONDUCTOR 20 ns SILICON N and P-Channel 100m Ω @ 2.2A, 10V 1V @ 250μA 190pF @ 15V 14nC @ 10V 14ns 20V 30V Logic Level Gate 1 V 3.5A 2.3A 16A 44 mJ
    IRFS3006TRL7PP IRFS3006TRL7PP Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2008 HEXFET® yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB 2.1MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN 375W 14 ns 375W Tc 240A SWITCHING 118 ns SILICON N-Channel 2.1m Ω @ 168A, 10V 4V @ 250μA 8850pF @ 50V 300nC @ 10V 61ns 69 ns 20V 60V 240A Tc 303 mJ 10V ±20V
    IRFP3306PBF IRFP3306PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 4.2MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 220W 15 ns 4V 220W Tc 31 ns 160A SWITCHING 40 ns SILICON N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 76ns 77 ns 20V 60V 120A Tc 620A 10V ±20V
    IRFB4227PBF IRFB4227PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 19.8mm 4.82mm 24MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 1 FET General Purpose Power 1 TO-220AB DRAIN Single 330W 33 ns 5V 330W Tc 150 ns 65A 175°C SWITCHING 21 ns SILICON N-Channel 24m Ω @ 46A, 10V 5V @ 250μA 4600pF @ 25V 98nC @ 10V 20ns 31 ns 30V 200V 200V 5 V 65A Tc 260A 10V ±30V
    IPB025N10N3GATMA1 IPB025N10N3GATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ yes Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead No 7 TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G6 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 300W 34 ns 100V 300W Tc 180A SWITCHING 0.0025Ohm 84 ns SILICON N-Channel 2.5m Ω @ 100A, 10V 3.5V @ 275μA 14800pF @ 50V 206nC @ 10V 58ns 28 ns 20V 180A Tc 6V 10V ±20V
    IPB64N25S320ATMA1 IPB64N25S320ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Cut Tape (CT) 2012 OptiMOS™ Active 1 (Unlimited) 175°C -55°C ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free 18 ns 250V 17.5mOhm PG-TO263-3-2 300W Tc 64A 45 ns N-Channel 20mOhm @ 64A, 10V 4V @ 270μA 7000pF @ 25V 89nC @ 10V 20ns 12 ns 20V 64A Tc 250V 7nF 10V ±20V 20 mΩ
    IRLMS1503TRPBF IRLMS1503TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 6 SMD/SMT EAR99 2.9972mm ROHS3 Compliant Lead Free Tin 3.2A 6 ULTRA LOW RESISTANCE SOT-23-6 No SVHC 1.143mm 1.75mm 100mOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 Single 1.7W 4.6 ns 1V 36 ns 1.7W Ta 3.2A SWITCHING 10 ns SILICON N-Channel 100m Ω @ 2.2A, 10V 1V @ 250μA 210pF @ 25V 9.6nC @ 10V 4.4ns 2 ns 20V 30V 1 V 3.2A Ta 4.5V 10V ±20V
    BSS192PH6327FTSA1 BSS192PH6327FTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2002 SIPMOS® yes Active 1 (Unlimited) 3 EAR99 4.5mm ROHS3 Compliant Lead Free 3 TO-243AA 1.5mm 2.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FLAT NOT SPECIFIED NOT SPECIFIED 1 DRAIN Single 1W 4.7 ns -250V 1W Ta 190mA 72 ns SILICON P-Channel 12 Ω @ 190mA, 10V 2V @ 130μA 104pF @ 25V 6.1nC @ 10V 5.2ns 50 ns 20V -250V 190mA Ta 250V 8 pF 2.8V 10V ±20V
    IRF7530TRPBF IRF7530TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 8 EAR99 3mm ROHS3 Compliant Lead Free 5.4A No 8 ULTRA LOW RESISTANCE 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) No SVHC 860μm 3mm 30mOhm Surface Mount -55°C~150°C TJ 20V ENHANCEMENT MODE e3 Matte Tin (Sn) GULL WING IRF7530PBF 1.3W 2 Dual 1.3W 8.5 ns 1.2V 5.4A METAL-OXIDE SEMICONDUCTOR 36 ns SILICON 2 N-Channel (Dual) 30m Ω @ 5.4A, 4.5V 1.2V @ 250μA 1310pF @ 15V 26nC @ 4.5V 11ns 16 ns 12V 20V Standard 1.2 V 40A 33 mJ
    IRF7319TRPBF IRF7319TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free Tin 6.5A No 8 AVALANCHE RATED, ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 29mOhm Surface Mount -55°C~150°C TJ ENHANCEMENT MODE DUAL GULL WING IRF7319PBF 2W 2 6.3 mm N-CHANNEL AND P-CHANNEL 2W 1V 6.5A SWITCHING METAL-OXIDE SEMICONDUCTOR 34 ns SILICON N and P-Channel 29m Ω @ 5.8A, 10V 1V @ 250μA 650pF @ 25V 33nC @ 10V 13ns 32 ns 20V 30V Standard 1 V 30A
    IRF7304TRPBF IRF7304TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 8 4.9784mm ROHS3 Compliant Contains Lead, Lead Free -4.3A No 8 LOGIC LEVEL COMPATIBLE 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 90mOhm Surface Mount -55°C~150°C TJ -20V ENHANCEMENT MODE 2W GULL WING IRF7304PBF 2W 2 Dual 2W 8.4 ns -700mV 84 ns -4.3A METAL-OXIDE SEMICONDUCTOR 51 ns SILICON 2 P-Channel (Dual) 90m Ω @ 2.2A, 4.5V 700mV @ 250μA 610pF @ 15V 22nC @ 4.5V 26ns 33 ns 12V -20V Logic Level Gate -700 mV 3.6A 4.3A 20V
    IRFR120NTRPBF IRFR120NTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) SMD/SMT 175°C -55°C 6.7056mm ROHS3 Compliant Lead Free Tin 9.1A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm 210mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) 1 1 Single 39W 4.5 ns 4V 210mOhm D-Pak 48W Tc 150 ns 9.4A 175°C 32 ns N-Channel 210mOhm @ 5.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 100V 4 V 9.4A Tc 100V 330pF 10V ±20V 210 mΩ
    BSZ086P03NS3EGATMA1 BSZ086P03NS3EGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 ESD PROTECTED 8-PowerTDFN No SVHC not_compliant 1.1mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 1 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 16 ns -2.5V -30V 2.1W Ta 69W Tc 13.5A SWITCHING 35 ns SILICON P-Channel 8.6m Ω @ 20A, 10V 3.1V @ 105μA 4785pF @ 15V 57.5nC @ 10V 46ns 8 ns 25V -30V 13.5A Ta 40A Tc 30V 6V 10V ±25V