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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-20ETF12-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.54mm | ROHS3 Compliant | 2 | FREE WHEELING DIODE | TO-220-2 | unknown | 8.76mm | 4.57mm | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | NOT APPLICABLE | 20ETF12 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | 20A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 1.31V @ 20A | -40°C~150°C | 1.2kV | 20A | 100μA | 1.2kV | 355A | 1200V | 400 ns | |||||||||||||||||||||||||||||
| VS-EPH3006HN3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2016 | Automotive, AEC-Q101, FRED Pt® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-2 | unknown | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T2 | 175°C | SILICON | 1 | SINGLE | Standard | HYPERFAST SOFT RECOVERY | 1 | 220A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 30μA @ 600V | 2.65V @ 30A | -65°C~175°C | 600V | 30A | 600V | 30μA | 26 ns | ||||||||||||||||||||||||||||||||||||
| VS-20ETF06-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.54mm | ROHS3 Compliant | 2 | FREE WHEELING DIODE | TO-220-2 | unknown | 8.76mm | 4.57mm | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | NOT APPLICABLE | 20ETF06 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | 20A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 600V | 1.3V @ 20A | -40°C~150°C | 600V | 20A | 100μA | 600V | 300A | 160 ns | ||||||||||||||||||||||||||||||
| VS-8EWF06STRR-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREEWHEELING DIODE, LOW LEAKAGE CURRENT | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 10 | 3 | R-PSSO-G2 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 1 | SINGLE | Standard | 8A | FAST SOFT RECOVERY HIGH POWER | 1 | TO-252AA | 120A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 600V | 1.2V @ 8A | -40°C~150°C | 600V | 8A | 600V | 55 ns | ||||||||||||||||||||||||||||||
| VS-HFA25TB60SHM3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2017 | Automotive, AEC-Q101, HEXFRED® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | PD-CASE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | unknown | Surface Mount | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 150°C | SILICON | 1 | SINGLE | Standard | EFFICIENCY | 1 | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 600V | 1.7V @ 25A | -55°C~150°C | 600V | 25A | 600V | 20μA | 50 ns | 125W | |||||||||||||||||||||||||||||||||||
| VS-1N1183R | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2012 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1N1183 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard, Reverse Polarity | POWER | 1 | 35A | ANODE | 400A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 50V | 1.7V @ 110A | -65°C~190°C | 50V | 35A | 10mA | 0.25 °C/W | 50V | |||||||||||||||||||||||||||||
| VS-1N1184R | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2012 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1184 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard, Reverse Polarity | POWER | 1 | 35A | 1.7V | 400A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 100V | 1.7V @ 110A | -65°C~190°C | 100V | 35A | 10mA | 100V | 400A | 500A | 0.25 °C/W | 100V | ||||||||||||||||||||||||||||
| VS-6FL80S05 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2012 | Active | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | DO-203AA, DO-4, Stud | Chassis, Stud Mount | Standard | 6A | 135A | Single | DO-203AA | Fast Recovery =< 500ns, > 200mA (Io) | 50μA @ 800V | 1.4V @ 6A | -65°C~150°C | 800V | 6A | 50μA | 800V | 6A | 0.5 °C/W | 500 ns | 800V | 500 ns | ||||||||||||||||||||||||||||||||||||||||||||
| VS-20ETF12FP-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE, UL APPROVED | TO-220-2 Full Pack | unknown | Through Hole | 8541.10.00.80 | e3 | MATTE TIN OVER NICKEL | NOT APPLICABLE | NOT APPLICABLE | 20ETF12 | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | 1.31V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1200V | 1.31V @ 20A | -40°C~150°C | 1.2kV | 20A | 355A | 1200V | 100μA | 400 ns | ||||||||||||||||||||||||||||||||||
| VS-16FR100 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2014 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | 31.8mm | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 16A | 1.23V | ANODE | 370A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 1000V | 1.23V @ 50A | -65°C~175°C | 1kV | 16A | 12mA | 1kV | 370A | 370A | 1000V | 0.5 °C/W | 1kV | |||||||||||||||||||||||||
| VS-175BGQ030HF4 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Screw, Through Hole | Tube | 2015 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 1 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | PowerTab® | Through Hole | UNSPECIFIED | R-PSFM-X1 | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 7400A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 30V | 590mV @ 175A | -55°C~150°C | 30V | 175A | 30V | 7.4kA | 4500μA | 8500pF @ 5V 1MHz | |||||||||||||||||||||||||||||||||||||
| VS-STPS30L60CW-N3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-3 | unknown | Through Hole | SINGLE | NOT SPECIFIED | NOT SPECIFIED | STPS30L60C | R-PSFM-T3 | 150°C | SILICON | 2 | COMMON CATHODE, 2 ELEMENTS | Schottky | GENERAL PURPOSE | 1 | TO-247AC | 1020A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 480μA @ 60V | 800mV @ 30A | -55°C~150°C | 60V | 30A | 60V | 480μA | |||||||||||||||||||||||||||||||||||||
| VS-42HFR80 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2017 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | DO-203AB, DO-5, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-H1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | ANODE | 595A | Single | Standard Recovery >500ns, > 200mA (Io) | 1.3V @ 125A | -65°C~190°C | 800V | 40A | 9mA | 800V | ||||||||||||||||||||||||||||||||||||||
| VS-1N2128RA | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2017 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | 1N2128 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard, Reverse Polarity | POWER | 1 | ANODE | 900A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 50V | 1.3V @ 188A | -65°C~200°C | 50V | 60A | 10mA | 0.25 °C/W | 50V | |||||||||||||||||||||||||||||||
| VS-60EPF02-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-2 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | R-PSFM-T2 | 150°C | SILICON | 1 | SINGLE | Standard | FAST SOFT RECOVERY | 1 | 830A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 200V | 1.3V @ 60A | -40°C~150°C | 200V | 60A | 200V | 100μA | 180 ns | |||||||||||||||||||||||||||||||||||
| VS-1N1186R | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2012 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N1186 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard, Reverse Polarity | POWER | 1 | 35A | 1.7V | 400A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 200V | 1.7V @ 110A | -65°C~190°C | 200V | 35A | 10mA | 200V | 400A | 500A | 0.25 °C/W | 200V | ||||||||||||||||||||||||||||
| VS-60APF02-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-3 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | R-PSFM-T3 | 150°C | SILICON | 1 | SINGLE | Standard | FAST SOFT RECOVERY | 1 | TO-247AC | 830A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 200V | 1.3V @ 60A | -40°C~150°C | 200V | 60A | 200V | 100μA | 180 ns | ||||||||||||||||||||||||||||||||||
| VS-60EPF06-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.9mm | ROHS3 Compliant | 2 | FREE WHEELING DIODE | TO-247-2 | unknown | 20.3mm | 5.3mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT APPLICABLE | NOT APPLICABLE | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | 60A | CATHODE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 600V | 1.3V @ 60A | -40°C~150°C | 600V | 60A | 100μA | 600V | 830A | 180 ns | |||||||||||||||||||||||||||||||
| VS-60EPF04-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-2 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | R-PSFM-T2 | 150°C | SILICON | 1 | SINGLE | Standard | FAST SOFT RECOVERY | 1 | 830A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 400V | 1.3V @ 60A | -40°C~150°C | 400V | 60A | 400V | 100μA | 180 ns | |||||||||||||||||||||||||||||||||||
| VS-95PF120 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 180°C | -55°C | ROHS3 Compliant | 2 | DO-203AB, DO-5, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 95A | 1.4V | CATHODE | 2.09kA | Single | Standard Recovery >500ns, > 200mA (Io) | 1.4V @ 267A | -55°C~180°C | 1.2kV | 95A | 9mA | 1.2kV | 2.09kA | 2.09kA | 1200V | 1.2kV | |||||||||||||||||||||||||||||||
| VS-60EPF10-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-2 | unknown | Through Hole | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | R-PSFM-T2 | 150°C | SILICON | 1 | SINGLE | Standard | FAST SOFT RECOVERY | 1 | 830A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 1.4V @ 60A | -40°C~150°C | 1kV | 60A | 1000V | 100μA | 480 ns | ||||||||||||||||||||||||||||||||||||
| VS-60APF10-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2015 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE | TO-247-3 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | R-PSFM-T3 | 150°C | SILICON | 1 | SINGLE | Standard | FAST SOFT RECOVERY | 1 | TO-247AC | 830A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 1.4V @ 60A | -40°C~150°C | 1kV | 60A | 1000V | 100μA | 480 ns | ||||||||||||||||||||||||||||||||||
| VS-1N2130RA | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2011 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.02mm | ROHS3 Compliant | No | 2 | LOW LEAKAGE CURRENT | DO-203AB, DO-5, Stud | 22.9mm | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1N2130 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | Standard, Reverse Polarity | POWER | 1 | 60A | 900A | Single | Standard Recovery >500ns, > 200mA (Io) | 10mA @ 150V | 1.3V @ 188A | -65°C~200°C | 150V | 60A | 10mA | 150V | 900A | 900A | 0.25 °C/W | 150V | ||||||||||||||||||||||||||
| VS-40HFL40S05 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2014 | Active | 1 (Unlimited) | 1 | EAR99 | 125°C | -40°C | ROHS3 Compliant | 2 | FREE WHEELING DIODE | DO-203AB, DO-5, Stud | Unknown | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard | 1 | 40A | 1.95V | CATHODE | 420A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 400V | 1.95V @ 40A | -40°C~125°C | 400V | 40A | 100μA | 400V | 420A | 0.25 °C/W | 500 ns | 400V | 500 ns | |||||||||||||||||||||||||||||
| VS-40HFL60S05 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2017 | Active | 1 (Unlimited) | 1 | EAR99 | 125°C | -40°C | ROHS3 Compliant | FREE WHEELING DIODE | DO-203AB, DO-5, Stud | unknown | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard | 1 | 500A | CATHODE | 420A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 600V | 1.95V @ 40A | -40°C~125°C | 600V | 40A | 100μA | 0.25 °C/W | 500 ns | 600V | 500 ns | |||||||||||||||||||||||||||||||||
| VS-16F80M | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Tube | 2017 | Active | 1 (Unlimited) | 1 | EAR99 | ROHS3 Compliant | DO-203AA, DO-4, Stud | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | 175°C | SILICON | 1 | SINGLE | Standard | GENERAL PURPOSE | 1 | 370A | CATHODE | Standard Recovery >500ns, > 200mA (Io) | 1.23V @ 50A | -65°C~175°C | 800V | 16A | 800V | 12000μA | ||||||||||||||||||||||||||||||||||||||
| VS-80APF10-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | 150°C | -40°C | 15.87mm | ROHS3 Compliant | 3 | FREE WHEELING DIODE | TO-247-3 | unknown | 20.7mm | 5.31mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | NOT APPLICABLE | NOT APPLICABLE | SILICON | 1 | Standard | FAST SOFT RECOVERY | 1 | TO-247AC | 80A | 1.35V | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 1000V | 1.35V @ 80A | -40°C~150°C | 1kV | 80A | 100μA | 1kV | 1.1kA | 1.1kA | 1000V | 480 ns | ||||||||||||||||||||||||||
| VS-HFA08PB60PBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Radial, Through Hole | Tube | 2011 | HEXFRED® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 15.9mm | ROHS3 Compliant | No | 2 | TO-247-2 | 20.7mm | 5.3mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 2 | Rectifier Diodes | SILICON | 1 | Standard | 8A | EFFICIENCY | 1 | 8A | CATHODE | 60A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | 600V | 8A | 5μA | 600V | 60A | 60A | 0.25 °C/W | 55 ns | 600V | 90 ns | |||||||||||||||||||||||||
| VS-16FR10 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 1998 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 16A | 1.23V | ANODE | 370A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 100V | 1.23V @ 50A | -65°C~175°C | 100V | 16A | 12mA | 100V | 370A | 370A | 0.5 °C/W | 100V | |||||||||||||||||||||||||
| VS-65PQ015-N3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2014 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | unknown | Through Hole | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSFM-T3 | 125°C | SILICON | 1 | SINGLE | Schottky | GENERAL PURPOSE | 1 | TO-247AC | 400A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 18mA @ 15V | 500mV @ 65A | -55°C~125°C | 15V | 65A | 15V | 18000μA |