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Vishay Semiconductor Diodes Division(13890)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Diameter | Length | RoHS Status | Flammability Rating | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Voltage - Rated DC | Capacitance | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Voltage | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Max Reverse Leakage Current | Supplier Device Package | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Natural Thermal Resistance | Reverse Recovery Time | Reverse Voltage | Recovery Time | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LS4151GS08 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | Automotive, AEC-Q101 | Active | 1 (Unlimited) | 175°C | -65°C | 1.6mm | 2.7mm | ROHS3 Compliant | 150mA | No | 2 | SOD-80 Variant | Surface Mount | Standard | 300mA | 1V | 2A | Single | 50nA | SOD-80 QuadroMELF | Fast Recovery =< 500ns, > 200mA (Io) | 50nA @ 50V | 1V @ 50mA | 175°C Max | 50V | 300mA | 75V | 2A | 50V | 300mA | 4 ns | 4 ns | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
| BY228GP-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2015 | Automotive, AEC-Q101 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Lead Free | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-201AD, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | NOT APPLICABLE | NOT APPLICABLE | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | HIGH VOLTAGE | 1 | 1.6V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 1500V | 1.6V @ 2.5A | -65°C~150°C | 1.5kV | 2.5A | 5μA | 1.5kV | 50A | 1500V | 20 μs | 40pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| VS-16F120 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 16A | 1.23V | CATHODE | 370A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 1200V | 1.23V @ 50A | -65°C~175°C | 1.2kV | 16A | 12mA | 1.2kV | 370A | 370A | 1200V | 0.5 °C/W | 1.2kV | ||||||||||||||||||||||||||||||||||
| VS-12F60 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 1998 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | No | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 12F60 | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 12A | 1.26V | CATHODE | 280A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 600V | 1.26V @ 38A | -65°C~175°C | 600V | 12A | 12mA | 600V | 370A | 280A | 0.5 °C/W | 600V | ||||||||||||||||||||||||||||||||||||
| VS-40HFR100 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2000 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.08mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 22.9mm | 17.4mm | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 40A | 1.3V | 595A | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 1000V | 1.3V @ 125A | -65°C~190°C | 1kV | 40A | 9mA | 1kV | 595A | 595A | 1000V | 0.25 °C/W | 1kV | ||||||||||||||||||||||||||||||||||||||
| VS-12F20 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 1998 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | No | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 12F20 | O-MUPM-D1 | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 12A | 1.26V | CATHODE | 280A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 200V | 1.26V @ 38A | -65°C~175°C | 200V | 12A | 12mA | 200V | 370A | 235A | 0.5 °C/W | 200V | ||||||||||||||||||||||||||||||||||||
| VS-16FR120 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 175°C | -65°C | 12.69mm | ROHS3 Compliant | 2 | DO-203AA, DO-4, Stud | Unknown | 31.8mm | 11mm | Chassis, Stud Mount | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 16A | 1.23V | ANODE | 370A | Single | Standard Recovery >500ns, > 200mA (Io) | 12mA @ 1200V | 1.23V @ 50A | -65°C~175°C | 1.2kV | 16A | 12mA | 1.2kV | 370A | 370A | 1200V | 0.5 °C/W | 1.2kV | ||||||||||||||||||||||||||||||||||
| VS-400U80D | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Chassis, Stud | Bulk | 2007 | Active | 1 (Unlimited) | 1 | EAR99 | 200°C | -40°C | ROHS3 Compliant | 2 | DO-205AB, DO-9, Stud | unknown | Stud Mount | UPPER | HIGH CURRENT CABLE | NOT SPECIFIED | NOT SPECIFIED | O-MUPM-H1 | SILICON | 1 | Standard | HIGH POWER | 1 | 400A | 1.62V | CATHODE | 8.64kA | Single | Standard Recovery >500ns, > 200mA (Io) | 15mA @ 800V | 1.62V @ 1500A | -40°C~200°C | 800V | 400A | 15mA | 800V | 8.25kA | 0.04 °C/W | 800V | ||||||||||||||||||||||||||||||||||||||||||
| VS-40HFR40 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Chassis, Stud | Bulk | 2008 | Active | 1 (Unlimited) | 1 | EAR99 | 190°C | -65°C | 20.02mm | ROHS3 Compliant | No | 2 | DO-203AB, DO-5, Stud | Unknown | 22.9mm | 17.35mm | Chassis, Stud Mount | 8541.10.00.80 | UPPER | SOLDER LUG | O-MUPM-D1 | SILICON | 1 | Standard, Reverse Polarity | GENERAL PURPOSE | 1 | 40A | 1.3V | 595A | Single | Standard Recovery >500ns, > 200mA (Io) | 9mA @ 400V | 1.3V @ 125A | -65°C~190°C | 400V | 40A | 9mA | 400V | 595A | 595A | 0.25 °C/W | 400V | |||||||||||||||||||||||||||||||||||||||
| VIT2060G-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2017 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-262-3 Long Leads, I2Pak, TO-262AA | unknown | Through Hole | 8541.10.00.80 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 150°C | Rectifier Diodes | Not Qualified | SILICON | 2 | COMMON CATHODE, 2 ELEMENTS | Schottky | EFFICIENCY | 1 | 100A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | 700μA @ 60V | 900mV @ 10A | -55°C~150°C | 60V | 10A | 60V | ||||||||||||||||||||||||||||||||||||||||||||||
| NSF8JT-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | TO-220-2 Full Pack, Isolated Tab | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 8A | GENERAL PURPOSE | 1 | 8A | 125A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 600V | 1.1V @ 8A | -55°C~150°C | 600V | 8A | 10μA | 600V | 125A | 600V | ||||||||||||||||||||||||||||||||||||||||||
| VT1045BP-M3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2012 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | 10.2362mm | ROHS3 Compliant | Lead Free | No | 2 | LOW POWER LOSS | TO-220-2 | Unknown | 15.24mm | 4.826mm | Through Hole | 8541.10.00.80 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 680mV | CATHODE | 100A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 45V | 680mV @ 10A | 200°C Max | 45V | 10A | 500μA | 45V | 100A | 100A | 10A DC | ||||||||||||||||||||||||||||||||||||
| RGP02-16E-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Box (TB) | 2015 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | HIGH RELIABILITY | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.70 | e3 | Matte Tin (Sn) | WIRE | RGP02-16 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 0.5A | 1.8V | ISOLATED | 20A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1600V | 1.8V @ 100mA | -65°C~175°C | 1.6kV | 500mA | 5μA | 1.6kV | 20A | 1600V | 300 ns | 1.6kV | 300 ns | |||||||||||||||||||||||||||||||||||||
| SBYV28-200-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | UL94 V-0 | Tin | No | 2 | LOW LEAKAGE CURRENT, FREE WHEELING DIODE | DO-201AD, Axial | Unknown | Through Hole | 8541.10.00.80 | e3 | WIRE | SBYV28-200 | 2 | Rectifier Diodes | SILICON | 1 | Standard | EFFICIENCY | 1 | 3.5A | 1.07V | ISOLATED | 90A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 1.1V @ 3.5A | -55°C~150°C | 200V | 3.5A | 5μA | 200V | 90A | 150A | 20 ns | 200V | 20 ns | 20pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||
| RS3K-E3/57T | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | 7.11mm | ROHS3 Compliant | Lead Free | 3A | No | 2 | FREE WHEELING DIODE | DO-214AB, SMC | Unknown | 2.42mm | 6.22mm | Surface Mount | 800V | 34pF | 3A | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 30 | RS3K | 2 | Rectifier Diodes | 800V | SILICON | 1 | Standard | EFFICIENCY | 1 | 3A | 3A | 1.3V | 100A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 800V | 1.3V @ 2.5A | -55°C~150°C | 800V | 3A | 10μA | 800V | 100A | 100A | 500 ns | 500 ns | 34pF @ 4V 1MHz | |||||||||||||||||||||||
| 1N5398GP-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | DO-204AC, DO-15, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | NOT APPLICABLE | 1N5398 | 2 | O-PALF-W2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 1.5A | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 800V | 1.4V @ 1.5A | -65°C~175°C | 800V | 1.5A | 5μA | 800V | 50A | 2 μs | 800V | 2 μs | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||
| GP15B-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2014 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 3.6mm | 7.6mm | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-204AC, DO-15, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | GP15B | 2 | Rectifier Diodes | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 1.5A | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 100V | 1.1V @ 1.5A | -65°C~175°C | 100V | 1.5A | 5μA | 100V | 50A | 3.5 μs | 100V | 3.5 μs | |||||||||||||||||||||||||||||||||||
| 1N5397GP-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2012 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT | DO-204AC, DO-15, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | WIRE | NOT APPLICABLE | NOT APPLICABLE | 1N5397 | 2 | O-PALF-W2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | GENERAL PURPOSE | 1 | 1.5A | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 600V | 1.4V @ 1.5A | -65°C~175°C | 600V | 1.5A | 5μA | 600V | 50A | 2 μs | 600V | 2 μs | 15pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||
| GL41T-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount, Through Hole | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-213AB, MELF (Glass) | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | 40 | GL41T | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.2V | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 1300V | 1.2V @ 1A | -65°C~175°C | 1.3kV | 1A | 10μA | 1.3kV | 30A | 1300V | 750 ns | 1.3kV | 8pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||
| UG1B-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Box (TB) | 2012 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 950mV | ISOLATED | 40A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 950mV @ 1A | -55°C~150°C | 100V | 1A | 5μA | 100V | 40A | 25 ns | 100V | 35 ns | |||||||||||||||||||||||||||||||||||||||
| BA157GP-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Box (TB) | 2009 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | No | 2 | LOW LEAKAGE CURRENT | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | WIRE | BA157 | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | 20A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.3V @ 1A | -65°C~175°C | 400V | 1A | 5μA | 400V | 20A | 150 ns | 400V | 150 ns | 15pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| 1N6479-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF (Glass) | unknown | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 1N6479 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 100V | 1.1V @ 1A | -65°C~175°C | 100V | 1A | 10μA | 100V | 30A | 100V | 8pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||
| VSSA310S-M3/5AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | TMBS® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | DO-214AC, SMA | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-C2 | 150°C | Not Qualified | SILICON | 1 | SINGLE | Schottky | 3A | EFFICIENCY | 1 | 60A | Fast Recovery =< 500ns, > 200mA (Io) | 150μA @ 100V | 800mV @ 3A | -40°C~150°C | 100V | 1.7A | 100V | 175pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| 1N4384GP-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Through Hole | Tape & Reel (TR) | 2012 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | No | FREE WHEELING DIODE, HIGH RELIABILITY | DO-204AC, DO-15, Axial | Through Hole | 8541.10.00.80 | e3 | WIRE | 1N4384 | 2 | O-PALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | ISOLATED | 50A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 400V | 1V @ 1A | -65°C~175°C | 400V | 1A | 5μA | 400V | 50A | 2 μs | 400V | 2 μs | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||
| GP10DE-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-204AL, DO-41, Axial | Through Hole | 8541.10.00.80 | e3 | MATTE TIN | WIRE | 260 | 30 | GP10D | AEC-Q101 | SILICON | 1 | Standard | 1A | 1A | ISOLATED | 30A | Single | Standard Recovery >500ns, > 200mA (Io) | 5μA @ 200V | 1.1V @ 1A | -65°C~175°C | 200V | 1A | 5μA | 200V | 30A | 3 μs | 200V | 3 μs | 8pF @ 4V 1MHz | |||||||||||||||||||||||||||||||||||||
| RGL41B-E3/96 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE | DO-213AB, MELF (Glass) | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | END | WRAP AROUND | 250 | 40 | RGL41B | 2 | Rectifier Diodes | SILICON | 1 | Standard | 1A | 1A | 1.3V | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 1.3V @ 1A | -65°C~175°C | 100V | 1A | 5μA | 100V | 30A | 150 ns | 100V | 150 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||
| VS-30BQ015-M3/9AT | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -55°C | 7.11mm | ROHS3 Compliant | Lead Free | 2 | FREE WHEELING DIODE | DO-214AB, SMC | No SVHC | unknown | 6.22mm | Surface Mount | 8541.10.00.80 | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | SILICON | 1 | Schottky | 4A | GENERAL PURPOSE | 1 | 4A | 350mV | Single | Fast Recovery =< 500ns, > 200mA (Io) | 4mA @ 15V | 350mV @ 3A | -55°C~125°C | 15V | 3A | 4mA | 15V | 650A | 650A | 1120pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||||
| VS-10WQ045FN-M3 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tube | 2009 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -40°C | 6.73mm | ROHS3 Compliant | 3 | FREE WHEELING DIODE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | unknown | 2.39mm | 6.22mm | Surface Mount | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 10WQ045 | 3 | R-PSSO-G2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | GENERAL PURPOSE | 1 | 10A | CATHODE | Common Anode | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 45V | 800mV @ 20A | -40°C~175°C | 45V | 10A | 1mA | 45V | 400A | 400A | 760pF @ 5V 1MHz | ||||||||||||||||||||||||||||||||||
| MBR760-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Tube | 2011 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | No SVHC | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR760 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 7.5A | 750mV | CATHODE | 150A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 500μA @ 60V | 750mV @ 7.5A | -65°C~175°C | 60V | 7.5A | 500μA | 60V | 150A | 150A | ||||||||||||||||||||||||||||||||||||||
| S1FLD-GS18 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2016 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | DO-219AB | unknown | Surface Mount | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | R-PDSO-F2 | 150°C | Rectifier Diodes | SILICON | 1 | SINGLE | Standard | 1.5A | 22A | Standard Recovery >500ns, > 200mA (Io) | 10μA @ 200V | 1.1V @ 1A | -55°C~150°C | 200V | 700mA | 200V | 1.8 μs | 4pF @ 4V 1MHz |