All Products
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Max Supply Voltage | Reach Compliance Code | Mounting Type | Operating Temperature | Technology | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | JESD-30 Code | Operating Temperature (Max) | Operating Temperature (Min) | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Element Configuration | Voltage Tolerance | Power Dissipation | Turn On Delay Time | Max Reverse Leakage Current | Test Current | Supplier Device Package | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Voltage - DC Reverse (Vr) (Max) | Reverse Current-Max | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Forward Voltage-Max | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Zener Voltage | Turn-Off Delay Time | Transistor Element Material | Input Capacitance | Current - Collector Cutoff (Max) | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | VCEsat-Max | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Regulation Current-Nom (Ireg) | Limiting Voltage-Max | Dynamic Impedance-Min |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| JANTX1N6621U | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/585 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | SQ-MELF, A | Surface Mount | 8541.10.00.80 | END | WRAP AROUND | 2 | Rectifier Diodes | MIL | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 400V | 1.2A | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 400V | 1.4V @ 1.2A | -65°C~150°C | 500nA | 440V | 20A | 400V | 30ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6621US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | 440V | 1.2A | 440V | 20A | 0.5μA | 13 °C/W | 30 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6627 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/590 | no | Active | 1 (Unlimited) | 2 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | E, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/590 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 440V | 1.35V @ 2A | -65°C~150°C | 440V | 1.75A | 2μA | 440V | 75A | 30 ns | 40pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6630US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | METALLURGICALLY BONDED | E-MELF | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 3A | HIGH VOLTAGE ULTRA FAST RECOVERY | 1 | 1.4A | 1.7V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 4μA @ 100V | 1.7V @ 3A | -65°C~150°C | 900V | 1.4A | 990V | 75A | 50 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6621US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/585 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | Qualified | MIL-19500 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 440V | 1.4V @ 1.2A | -65°C~150°C | 440V | 1.2A | 440V | 20A | 0.5μA | 30 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5292UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | no | Active | 1 | 2 | EAR99 | Non-RoHS Compliant | METALLURGICALLY BONDED | 100V | FIELD EFFECT | 8541.10.00.70 | e0 | TIN LEAD | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | 2 | O-LELF-R2 | 175°C | -65°C | Current Regulator Diodes | Not Qualified | SILICON | 1 | CURRENT REGULATOR DIODE | DO-213AB | ISOLATED | Single | 0.5W | 0.62mA | 1.13V | 1550000Ohm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5417US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 235 | 20 | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.5V @ 9A | -65°C~175°C | 200V | 3A | 1μA | 200V | 80A | 150 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| USD245CHR2 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Bulk | 1996 | no | Active | 3 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 3 | TO-39 | SCHOTTKY | 8541.10.00.80 | e0 | TIN LEAD | BOTTOM | WIRE | SILICON | 2 | RECTIFIER DIODE | 2A | EFFICIENCY | 1 | TO-205AF | 6A | Common Cathode | 2mA | 45V | 80A | 0.68V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N649-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/240 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 1N649 | 2 | Qualified | 1.5W | SILICON | 1 | Standard | 0.15A | ISOLATED | Single | 5% | 1.5W | 500nA | 45mA | Fast Recovery =< 500ns, > 200mA (Io) | 50nA @ 600V | 1V @ 400mA | -65°C~175°C | 600V | 400mA | 5.6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R30760 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Stud | Bulk | 1997 | no | Active | 1 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | EXCELLENT RELIABILITY | 8541.10.00.80 | e0 | TIN LEAD | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | SILICON | 1 | RECTIFIER DIODE | POWER | 1 | 85A | Single | 25μA | 600V | 1.5kA | 1.1V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6391 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Stud | 1997 | no | Active | 1 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | REVERSE ENERGY TESTED | SCHOTTKY | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | 1 | O-MUPM-D1 | Rectifier Diodes | SILICON | 1 | RECTIFIER DIODE | GENERAL PURPOSE | 1 | 25A | 680mV | CATHODE | Single | 1.5mA | 45V | 600A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6622 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/585 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Contains Lead | Lead, Tin | 2 | HIGH RELIABILITY | A, Axial | not_compliant | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | DO-41 | 1.2A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 660V | 1.4V @ 1.2A | -65°C~150°C | 660V | 2A | 660V | 20A | 0.5μA | 30 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTX1N6625 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/585 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1A | 1.95V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 1100V | 1.75V @ 1A | -65°C~150°C | 1.1kV | 1A | 1.1kV | 15A | 1100V | 60 ns | 10pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N6079 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | no | Active | 1 (Unlimited) | 2 | 155°C | -65°C | Non-RoHS Compliant | Lead, Tin | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Not Qualified | MIL-19500/503 | SILICON | 1 | Standard | ULTRA FAST RECOVERY POWER | 1 | 12A | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 10μA @ 50V | 1.5V @ 37.7A | -65°C~155°C | 50V | 2A | 100V | 30 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ150H120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | 2016 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 750W | Full Bridge | SP6 | Standard | 100μA | 2.4V @ 15V, 150A | Trench Field Stop | No | 8.8nF @ 25V | 1200V | 250A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT400DA120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | Bulk | 2012 | yes | Active | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | 5 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.785kW | 1785W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 560A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 28nF | 750μA | 340 ns | 2.1V @ 15V, 400A | 620 ns | Trench Field Stop | No | 28nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100TA120TPG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | Active | 1 (Unlimited) | 23 | EAR99 | RoHS Compliant | No | 23 | Module | Chassis Mount | -40°C~175°C TJ | UPPER | UNSPECIFIED | 23 | Insulated Gate BIP Transistors | 480W | 480W | 6 | Three Phase | ISOLATED | N-CHANNEL | Standard | 140A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 7.2nF | 250μA | 340 ns | 2.1V @ 15V, 100A | 610 ns | Trench Field Stop | Yes | 20V | 7.2nF @ 25V | 2.1 V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ300H65G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Through Hole | 2012 | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 6 | SP6 | Through Hole | -40°C~175°C TJ | Insulated Gate BIP Transistors | 1kW | 1000W | 1 | Full Bridge | 19 ns | Standard | 600A | 650V | 2.3V | 197 ns | 18.3nF | 300μA | 2.3V @ 15V, 300A | Trench Field Stop | No | 20V | 18.3nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT225DU170G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.25kW | 1250W | 2 | Dual, Common Source | ISOLATED | N-CHANNEL | Dual | Standard | 340A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 20nF | 500μA | 450 ns | 2.4V @ 15V, 225A | 1100 ns | Trench Field Stop | No | 20nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ600A65T6G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Through Hole | Active | 1 (Unlimited) | EAR99 | RoHS Compliant | Lead Free | 6 | SP6 | Through Hole | -40°C~175°C TJ | 2kW | 2000W | Half Bridge | Dual | 19 ns | Standard | 1.2kA | 650V | 2.4V | 197 ns | 36.6nF | 600μA | 2.4V @ 15V, 600A | Trench Field Stop | Yes | 36.6nF @ 25V | 1200A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300TL65G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
36 Weeks | 2012 | Active | 1 (Unlimited) | RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT225A170G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | yes | Active | 1 (Unlimited) | 8 | EAR99 | RoHS Compliant | 7 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 8 | R-XUFM-X8 | 1.25kW | 1250W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 340A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 20nF | 500μA | 450 ns | 2.4V @ 15V, 225A | 1100 ns | Trench Field Stop | No | 20nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT100TL170G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | Active | 1 (Unlimited) | RoHS Compliant | 12 | Module | Chassis Mount | -40°C~150°C TJ | Insulated Gate BIP Transistors | 560W | 560W | 1 | Three Level Inverter | Standard | 150A | 1.7kV | 2.4V | 9nF | 350μA | 2.4V @ 15V, 100A | Trench Field Stop | No | 20V | 9nF @ 25V | 1700V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300A170D3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2012 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 7 | D-3 Module | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | 1.47kW | 1470W | 2 | Half Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 530A | 1.7kV | 1.7kV | MOTOR CONTROL | SILICON | 26nF | 8mA | 430 ns | 2.4V @ 15V, 300A | 1200 ns | Trench Field Stop | No | 26nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ200H120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount | 2012 | Active | 1 (Unlimited) | RoHS Compliant | Lead Free | 6 | SP6 | Chassis Mount | -40°C~175°C TJ | Insulated Gate BIP Transistors | 1kW | 1000W | 1 | Full Bridge | 30 ns | Standard | 350A | 1.2kV | 2.4V | 290 ns | 12.3nF | 100μA | 2.4V @ 15V, 200A | Trench Field Stop | No | 20V | 12.3nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT75TDU120PG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 21 | EAR99 | RoHS Compliant | 6 | AVALANCHE RATED | SP6 | Chassis Mount | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 21 | R-XUFM-X21 | 150°C | 350W | 350W | 6 | Triple, Dual - Common Source | ISOLATED | N-CHANNEL | Standard | 100A | 1.2kV | 2.1V | POWER CONTROL | SILICON | 5.34nF | 250μA | 335 ns | 2.1V @ 15V, 75A | 610 ns | Trench Field Stop | No | 5.34nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT300DA170D3G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2004 | yes | Active | 1 (Unlimited) | 7 | EAR99 | RoHS Compliant | 5 | D-3 Module | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 7 | R-XUFM-X7 | Insulated Gate BIP Transistors | 1.47kW | 1470W | 1 | Single | ISOLATED | N-CHANNEL | Standard | 530A | 1.7kV | 1.7kV | MOTOR CONTROL | SILICON | 26nF | 8mA | 430 ns | 2.4V @ 15V, 300A | 1200 ns | Trench Field Stop | No | 20V | 26nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT50TDU170PG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 21 | EAR99 | RoHS Compliant | 21 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 21 | 310W | 310W | 6 | Triple, Dual - Common Source | ISOLATED | N-CHANNEL | Standard | 70A | 1.7kV | 1.7kV | POWER CONTROL | SILICON | 4.4nF | 250μA | 450 ns | 2.4V @ 15V, 50A | 1050 ns | Trench Field Stop | No | 4.4nF @ 25V | 1700V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGT200DH120G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | Chassis Mount, Screw | 2006 | yes | Active | 1 (Unlimited) | 8 | EAR99 | RoHS Compliant | 8 | AVALANCHE RATED | SP6 | Chassis Mount | -40°C~150°C TJ | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 8 | 890W | 890W | 2 | Asymmetrical Bridge | ISOLATED | N-CHANNEL | Dual | Standard | 280A | 1.2kV | 1.2kV | POWER CONTROL | SILICON | 14nF | 350μA | 340 ns | 2.1V @ 15V, 200A | 610 ns | Trench Field Stop | No | 14nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTGLQ200H65G | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 36 Weeks | 2016 | Active | RoHS Compliant | Module | Chassis Mount | -40°C~175°C TJ | 680W | Full Bridge | SP6 | Standard | 75μA | 2.3V @ 15V, 200A | Trench Field Stop | No | 12.2nF @ 25V | 650V | 270A |