All Products
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RF/IF & RFID
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Microsemi Corporation(6096)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Reach Compliance Code | Height | Width | Mounting Type | Weight | Voltage - Rated DC | Technology | Capacitance | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Non-rep Pk Forward Current-Max | Output Current | Forward Current | Forward Voltage | Case Connection | Max Surge Current | Element Configuration | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Natural Thermal Resistance | Reverse Recovery Time | Power Dissipation-Max | Reverse Voltage (DC) | Recovery Time | Reverse Test Voltage | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT2X31DC60J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount, Screw | Bulk | 1997 | Active | 1 (Unlimited) | 4 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | UPPER | UNSPECIFIED | 4 | Other Diodes | 2 | Silicon Carbide Schottky | POWER | 1 | 30A | 1.8V | ISOLATED | No Recovery Time > 500mA (Io) | 600μA @ 600V | 1.8V @ 30A | 600V | 30A | 600μA | 600V | 370A | 2 Independent | 0 s | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CPT50235 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | 2012 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | RoHS Compliant | No | 3 | TO-244AB | Chassis Mount | 8541.10.00.80 | UPPER | UNSPECIFIED | 2 | R-XUFM-X2 | SILICON | 2 | Schottky | POWER | 1 | 250A | 550mV | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 12mA @ 35V | 550mV @ 250A | 35V | 250A | 12mA | 35V | 5kA | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X60DC120J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount, Screw | Bulk | Active | 1 (Unlimited) | 4 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | UPPER | UNSPECIFIED | 4 | Other Diodes | 2 | Silicon Carbide Schottky | GENERAL PURPOSE | 1 | 60A | 1.8V | ISOLATED | No Recovery Time > 500mA (Io) | 1.2mA @ 1200V | 1.8V @ 60A | 1.2kV | 60A | 1.2mA | 1.2kV | 750A | 2 Independent | 1200V | 0 s | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT2X150DL60J | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Chassis Mount, Screw | Tube | 1997 | no | Active | 1 (Unlimited) | 4 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 4 | SOT-227-4, miniBLOC | Chassis Mount | UPPER | UNSPECIFIED | Other Diodes | SILICON | 2 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 150A | 1.6V | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | 25μA @ 600V | 1.6V @ 150A | -55°C~175°C | 600V | 150A | 25μA | 600V | 1kA | 2 Independent | 408 ns | |||||||||||||||||||||||||||||||||||||||||||||
| FST16090 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Screw | Bulk | 2012 | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 3 | TO-249AA | Screw Mount | 8541.10.00.80 | SINGLE | SOLDER LUG | 3 | SILICON | 2 | Schottky | POWER | 1 | 160A | 960mV | ISOLATED | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 90V | 960mV @ 80A | 90V | 80A | 2mA | 90V | 1.2kA | 1 Pair Common Cathode | |||||||||||||||||||||||||||||||||||||||||||||||
| FST16045 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Bulk | 2012 | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | 175°C | -55°C | RoHS Compliant | No | 3 | TO-249AA Isolated Base | Chassis Mount | 8541.10.00.80 | SINGLE | SOLDER LUG | 3 | SILICON | 2 | Schottky | POWER | 1 | 160A | 740mV | Common Cathode | Fast Recovery =< 500ns, > 200mA (Io) | 2mA @ 45V | 740mV @ 80A | 45V | 80A | 2mA | 45V | 1.2kA | 1 Pair Common Cathode | ||||||||||||||||||||||||||||||||||||||||||||||||
| APT30D60BG | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Tube | 1997 | yes | Active | 1 (Unlimited) | 2 | 175°C | -55°C | 21.46mm | RoHS Compliant | Lead Free | Tin | 30A | No | TO-247-2 | 5.31mm | 16.26mm | Through Hole | 6.500007g | 600V | 8541.10.00.80 | e1 | 3 | R-PSFM-T2 | Rectifier Diodes | SILICON | 1 | Standard | ULTRA FAST SOFT RECOVERY | 1 | 30A | 30A | 1.6V | CATHODE | 320A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 250μA @ 600V | 1.8V @ 30A | -55°C~175°C | 600V | 30A | 250μA | 600V | 320A | 85 ns | 600V | 23 ns | |||||||||||||||||||||||||||||||||
| 1N3611 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Through Hole | Bulk | 1997 | Active | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | Yes | 2 | A, Axial | Through Hole | 1N3611 | Standard | 1.1V | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 200V | 1.1V @ 1A | -65°C~175°C | 200V | 1A | 1μA | 200V | 30A | 200V | 1A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4454UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Surface Mount | Bulk | 1999 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | MIL-19500/144 | SILICON | 1 | Standard | 200mA | 1V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 100nA @ 50V | 1V @ 10mA | -55°C~175°C | 50V | 200mA | 100nA | 50V | 4A | 200mA DC | 4 ns | 0.5W | |||||||||||||||||||||||||||||||||||||||||
| JAN1N5420 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Rectifier Diodes | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | 600V | 3A | 1μA | 600V | 80A | 400 ns | |||||||||||||||||||||||||||||||||||||||
| 1N482B | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Bulk | no | Active | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | DO-204AH, DO-35, Axial | Through Hole | 8541.10.00.70 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | NOT SPECIFIED | NO | O-LALF-W2 | 200°C | Not Qualified | SILICON | 1 | SINGLE | Standard | 0.2A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | 25nA @ 30V | 1V @ 100mA | -65°C~200°C | 30V | 200mA | 0.25W | |||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6677UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/610 | no | Active | 1 (Unlimited) | 2 | EAR99 | 125°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/610E | SILICON | 1 | Schottky | 200mA | 700mV | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 5μA @ 40V | 500mV @ 200mA | -65°C~125°C | 5μA | 40V | 50pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5809 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY, METALLURGICALLY BONDED | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | 100V | 3A | 5μA | 100V | 125A | 30 ns | 60pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||
| JANTX1N4249 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/286 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 1000V | 1.3V @ 3A | -65°C~175°C | 1kV | 1A | 1μA | 1kV | 25A | 1000V | 5 μs | |||||||||||||||||||||||||||||||||||||||
| JAN1N5711UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | Military, MIL-PRF-19500/444 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/444 | SILICON | 1 | Schottky | 0.033A | 33mA | 1V | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 1V @ 15mA | -65°C~150°C | 70V | 2pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5806 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1 | 975mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 150V | 875mV @ 1A | -65°C~175°C | 150V | 1A | 1μA | 150V | 35A | 25 ns | 25pF @ 10V 1MHz | |||||||||||||||||||||||||||||||||||||||
| JANTX1N5623 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | A, Axial | Through Hole | 8541.10.00.80 | WIRE | 2 | Qualified | SILICON | 1 | Standard | 1A | DO-7 | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 1000V | 1.6V @ 3A | -65°C~175°C | 1kV | 1A | 500nA | 1kV | 30A | 1000V | 500 ns | 15pF @ 12V 1MHz | ||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N5622 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 1000V | 1.3V @ 3A | -65°C~200°C | 1kV | 1A | 500nA | 1kV | 30A | 1000V | 2 μs | |||||||||||||||||||||||||||||||||||||||
| JANTXV1N5615US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/429 | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | SQ-MELF, A | Surface Mount | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | SILICON | 1 | Standard | 1A | 1.6V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 500nA @ 600V | 1.6V @ 3A | -65°C~175°C | 500nA | 200V | 30A | 1A | 150 ns | 45pF @ 12V 1MHz | |||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6660 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | no | Active | 3 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | Lead, Tin | TO-254 | SCHOTTKY | 8541.10.00.80 | e0 | TIN LEAD | SINGLE | PIN/PEG | NOT SPECIFIED | NOT SPECIFIED | 3 | S-XSFM-P3 | Qualified | MIL-19500/608 | SILICON | 2 | RECTIFIER DIODE | POWER | 1 | 15A | 1V | ISOLATED | Common Cathode | 45V | 300A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| JANTXV1N6858UR-1 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | Surface Mount | Bulk | Military, MIL-PRF-19500/444 | no | Active | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | DO-213AA | Surface Mount | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Qualified | MIL-19500/444 | SILICON | 1 | Schottky | 0.075A | 75mA | 650mV | ISOLATED | Single | Small Signal =< 200mA (Io), Any Speed | 200nA @ 50V | 650mV @ 15mA | -65°C~150°C | 70V | 4.5pF @ 0V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||
| JAN1N3611 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/228 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.1V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 100μA @ 300V | 1.1V @ 1A | -65°C~175°C | 200V | 1A | 1μA | 200V | 30A | 38 °C/W | ||||||||||||||||||||||||||||||||||||||||
| 1N4247 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | Yes | 2 | HIGH RELIABILITY | A, Axial | not_compliant | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 2 | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 1μA @ 600V | 1.3V @ 3A | -65°C~175°C | 600V | 1A | 1μA | 600V | 25A | 5 μs | ||||||||||||||||||||||||||||||||||||||||
| JAN1N5618 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | HIGH RELIABILITY | A, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Rectifier Diodes | Qualified | MIL-19500 | SILICON | 1 | Standard | 1A | 50A | 1.3V | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | 600V | 1A | 500nA | 600V | 30A | 2 μs | |||||||||||||||||||||||||||||||||||||
| JAN1N5811US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | Surface Mount | Bulk | Military, MIL-PRF-19500/477 | no | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | HIGH RELIABILITY | SQ-MELF, B | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Rectifier Diodes | Qualified | MIL-19500/477 | SILICON | 1 | Standard | 3A | ULTRA FAST RECOVERY | 1 | 6A | 875mV | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 150V | 875mV @ 4A | -65°C~175°C | 150V | 6A | 5μA | 150V | 125A | 30 ns | 5W | 60pF @ 10V 1MHz | ||||||||||||||||||||||||||||||||||||
| JAN1N5614US | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Surface Mount | Bulk | 1997 | Military, MIL-PRF-19500/427 | no | Active | 1 (Unlimited) | 2 | EAR99 | 200°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | METALLURGICALLY BONDED | SQ-MELF, A | Surface Mount | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | 2 | Rectifier Diodes | Qualified | SILICON | 1 | Standard | 1A | ISOLATED | Single | Standard Recovery >500ns, > 200mA (Io) | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | 200V | 1A | 500nA | 200V | 30A | 2 μs | ||||||||||||||||||||||||||||||||||||||||
| JANTX1N6643 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/578 | no | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | Non-RoHS Compliant | No | 2 | METALLURGICALLY BONDED | Axial | Through Hole | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/578E | SILICON | 1 | Standard | 0.3A | 50V | DO-35 | 1.2V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 50nA @ 20V | 1.2V @ 100mA | -65°C~175°C | 500nA | 75V | 2.5A | 125V | 300mA | 6 ns | 0.75W | 5pF @ 0V 1MHz | |||||||||||||||||||||||||||||||||||||
| 1N6628 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Bulk | 1997 | Active | 1 (Unlimited) | 2 | 150°C | -65°C | RoHS Compliant | Lead Free | Lead, Tin | 4A | Yes | 2 | METALLURGICALLY BONDED, HIGH RELIABILITY | A, Axial | Through Hole | 600V | AVALANCHE | 40pF | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1N6628 | 2 | Not Qualified | SILICON | 1 | Standard | ULTRA FAST RECOVERY | 1 | 4A | 1.75A | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 2μA @ 600V | 1.35V @ 2A | -65°C~150°C | 600V | 1.75A | 660V | 75A | 45 ns | |||||||||||||||||||||||||||||||||||
| JANTX1N5418 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Through Hole | Bulk | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -55°C | Non-RoHS Compliant | No | 2 | B, Axial | Through Hole | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 400V | 1.5V @ 9A | -65°C~175°C | 400V | 3A | 1μA | 400V | 80A | 150 ns | |||||||||||||||||||||||||||||||||||||||||||
| JANTX1N5420 | Microsemi Corporation | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Through Hole | Bulk | 1997 | Military, MIL-PRF-19500/411 | Active | 1 (Unlimited) | 2 | 175°C | -65°C | Non-RoHS Compliant | Contains Lead | No | 2 | B, Axial | Through Hole | AVALANCHE | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Qualified | MIL-19500/411L | SILICON | 1 | Standard | 3A | FAST RECOVERY POWER | 1 | 1.5V | ISOLATED | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 600V | 1.5V @ 9A | -65°C~175°C | 600V | 3A | 1μA | 600V | 80A | 400 ns |