Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Min Breakdown Voltage | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSC026N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | 506.605978mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | DRAIN | Halogen Free | Single | 156W | 18 ns | 3V | 80V | 2.5W Ta 156W Tc | 100A | 150°C | SWITCHING | 0.0026Ohm | 47 ns | SILICON | N-Channel | 2.6m Ω @ 50A, 10V | 3.8V @ 115μA | 6800pF @ 40V | 92nC @ 10V | 14ns | 16 ns | 20V | 80V | 23A | 23A Ta 100A Tc | 400A | 370 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRF1407STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 7.8mOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.8W | 11 ns | 4V | 3.8W Ta 200W Tc | 100A | SWITCHING | 150 ns | SILICON | N-Channel | 7.8m Ω @ 78A, 10V | 4V @ 250μA | 5600pF @ 25V | 250nC @ 10V | 150ns | 140 ns | 20V | 75V | 75V | 4 V | 75A | 100A Tc | 520A | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRL540NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 36A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 53mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | 250 | 30 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 140W | 11 ns | 2V | 140W Tc | 290 ns | 36A | SWITCHING | 39 ns | SILICON | N-Channel | 44m Ω @ 18A, 10V | 2V @ 250μA | 1800pF @ 25V | 74nC @ 5V | 81ns | 62 ns | 16V | 100V | 100V | 2 V | 36A Tc | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
IPB180P04P4L02ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | Contains Lead | 7 | TO-263-7, D2Pak (6 Leads + Tab) | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 32 ns | -40V | 150W Tc | 180A | SWITCHING | 0.0039Ohm | 146 ns | SILICON | P-Channel | 2.4m Ω @ 100A, 10V | 2.2V @ 410μA | 18700pF @ 25V | 286nC @ 10V | 28ns | 119 ns | 16V | 180A Tc | 40V | 84 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
IPB019N06L3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | not_compliant | 4.57mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-TO-263-3 | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | 1 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 250W | 35 ns | 1.7V | 60V | 250W Tc | 120A | 175°C | SWITCHING | 131 ns | SILICON | N-Channel | 1.9m Ω @ 100A, 10V | 2.2V @ 196μA | 28000pF @ 30V | 166nC @ 4.5V | 79ns | 38 ns | 20V | 60V | 120A Tc | 480A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRF7416TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | -10A | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 20mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 1 | 1 | 6.3 mm | Single | 2.5W | 18 ns | -2.04V | 2.5W Ta | 85 ns | -10A | 150°C | SWITCHING | 59 ns | SILICON | P-Channel | 20m Ω @ 5.6A, 10V | 1V @ 250μA | 1700pF @ 25V | 92nC @ 10V | 49ns | 60 ns | 20V | -30V | -30V | -20 V | 10A Ta | 30V | 45A | 370 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
BSZ440N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 29W | 4.3 ns | 100V | 29W Tc | 5.3A | SWITCHING | 0.044Ohm | 9.1 ns | SILICON | N-Channel | 44m Ω @ 12A, 10V | 2.7V @ 12μA | 640pF @ 50V | 9.1nC @ 10V | 1.8ns | 2 ns | 20V | 5.3A Ta 18A Tc | 72A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSP295H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2001 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-261-4, TO-261AA | No SVHC | 1.6mm | 3.5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 4 | R-PDSO-G4 | 1 | DRAIN | Halogen Free | Single | 1.5W | 5.4 ns | 1.1V | 60V | 1.8W Ta | 1.8A | 0.5Ohm | 27 ns | SILICON | N-Channel | 300m Ω @ 1.8A, 10V | 1.8V @ 400μA | 368pF @ 25V | 17nC @ 10V | 9.9ns | 19 ns | 20V | 60V | 60V | 1.1 V | 1.8A Ta | 7.2A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
BSC030N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 7.3 ns | 30V | 2.5W Ta 69W Tc | 23A | SWITCHING | 0.0047Ohm | 29 ns | SILICON | N-Channel | 3m Ω @ 30A, 10V | 2.2V @ 250μA | 4300pF @ 15V | 55nC @ 10V | 5.2ns | 4.8 ns | 20V | 23A Ta 100A Tc | 400A | 75 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSZ110N08NS5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | 1 | DRAIN | Halogen Free | Single | 9 ns | 80V | 50W Tc | 40A | SWITCHING | 15 ns | SILICON | N-Channel | 11m Ω @ 20A, 10V | 3.8V @ 22μA | 1300pF @ 40V | 18.5nC @ 10V | 3ns | 3 ns | 20V | 80V | 40A Tc | 40 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSZ100N06LS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 8 ns | 60V | 2.1W Ta 50W Tc | 11A | SWITCHING | 19 ns | SILICON | N-Channel | 10m Ω @ 20A, 10V | 2.2V @ 23μA | 3500pF @ 30V | 45nC @ 10V | 58ns | 20V | 20A | 11A Ta 20A Tc | 55 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
BSC030N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | YES | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.5W Ta 83W Tc | SWITCHING | 0.003Ohm | 40V | SILICON | N-Channel | 3m Ω @ 50A, 10V | 4V @ 49μA | 4900pF @ 20V | 61nC @ 10V | 23A | 23A Ta 100A Tc | 40V | 400A | 115 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRF7821TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 13.6A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 9.1MOhm | Surface Mount | -55°C~155°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | 1 | 6.3 mm | Single | 2.5W | 6.3 ns | 1V | 2.5W Ta | 42 ns | 13.6A | 155°C | SWITCHING | 9.7 ns | SILICON | N-Channel | 9.1m Ω @ 13A, 10V | 1V @ 250μA | 1010pF @ 15V | 14nC @ 4.5V | 2.7ns | 7.3 ns | 20V | 30V | 30V | 1 V | 13.6A Ta | 44 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
IRFR5505TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | -18A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.52mm | 6.22mm | 110mOhm | Surface Mount | -55°C~150°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 57W | 12 ns | -4V | 57W Tc | 77 ns | -18A | 150°C | SWITCHING | 20 ns | SILICON | P-Channel | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 650pF @ 25V | 32nC @ 10V | 28ns | 16 ns | 20V | -55V | -55V | -4 V | 18A Tc | 55V | 64A | 10V | ±20V | |||||||||||||||||||||||||||
BSS83PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | PG-SOT23-3-5 | e3 | DUAL | GULL WING | 260 | 30 | 3 | 1 | 1 | Halogen Free | Single | 360mW | 23 ns | -1.5V | -60V | 360mW Ta | -330mA | 150°C | 3Ohm | 56 ns | SILICON | P-Channel | 2 Ω @ 330mA, 10V | 2V @ 80μA | 78pF @ 25V | 3.57nC @ 10V | 71ns | 61 ns | 20V | -60V | 330mA Ta | 60V | 9 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRLML5103TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | -610mA | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 600mOhm | Surface Mount | -55°C~150°C TJ | -30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro(SOT23) | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | Other Transistors | Not Qualified | 1 | Single | 540mW | 30V | 10 ns | -1V | 540mW Ta | -760mA | SWITCHING | 23 ns | SILICON | P-Channel | 600m Ω @ 600mA, 10V | 1V @ 250μA | 75pF @ 25V | 5.1nC @ 10V | 8.2ns | 16 ns | 20V | -30V | -30V | -1 V | 0.76A | 760mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRLML6402TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | -3.7A | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 65mOhm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Micro3 | e3 | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | 1 | Single | 1.3W | 350 ns | -550mV | 1.3W Ta | -3.7A | 150°C | SWITCHING | 588 ns | SILICON | P-Channel | 65m Ω @ 3.7A, 4.5V | 1.2V @ 250μA | 633pF @ 10V | 12nC @ 5V | 48ns | 381 ns | 12V | -20V | -20V | -550 mV | 3.7A Ta | 20V | 22A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||
IRLML2060TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 1.397mm | 480MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 1.25W | 4.9 ns | 2.5V | 1.25W Ta | 21 ns | 1.2A | SWITCHING | 3.7 ns | SILICON | N-Channel | 480m Ω @ 1.2A, 10V | 2.5V @ 25μA | 64pF @ 25V | 0.67nC @ 4.5V | 3.8ns | 2.8 ns | 16V | 60V | 1.2A Ta | 4.8A | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IRLML6401TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | Tin | -4.3A | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 50mOhm | Surface Mount | -55°C~150°C TJ | -12V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | 1 | Single | 1.3W | 11 ns | -550mV | 1.3W Ta | -4.3A | 150°C | SWITCHING | 250 ns | SILICON | P-Channel | 50m Ω @ 4.3A, 4.5V | 950mV @ 250μA | 830pF @ 10V | 15nC @ 5V | 32ns | 210 ns | 8V | -12V | -12V | -550 mV | 4.3A Ta | 12V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
BSS308PEH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | 1mm | 1.3mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | Halogen Free | Single | 500mW | 5.6 ns | -30V | 500mW Ta | 1.6A | 0.08Ohm | 15.3 ns | SILICON | P-Channel | 80m Ω @ 2A, 10V | 2V @ 11μA | 500pF @ 15V | 5nC @ 10V | 7.7ns | 20V | 2A | 2A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRLML0060TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 92MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 1.25W | 5.4 ns | 2.5V | 1.25W Ta | 21 ns | 2.7A | 150°C | SWITCHING | 6.8 ns | SILICON | N-Channel | 92m Ω @ 2.7A, 10V | 2.5V @ 25μA | 290pF @ 25V | 2.5nC @ 4.5V | 6.3ns | 4.2 ns | 16V | 60V | 2.5 V | 2.7A Ta | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
IRLML0100TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 220MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 1.3W | 2.2 ns | 2.5V | 1.3W Ta | 30 ns | 1.6A | 150°C | SWITCHING | 9 ns | SILICON | N-Channel | 220m Ω @ 1.6A, 10V | 2.5V @ 25μA | 290pF @ 25V | 2.5nC @ 4.5V | 2.1ns | 3.6 ns | 16V | 100V | 2.5 V | 1.6A Ta | 7A | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
IRF9317TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Active | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 10.2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 19 ns | -1.8V | 2.5W Ta | -16A | SWITCHING | 160 ns | SILICON | P-Channel | 6.6m Ω @ 16A, 10V | 2.4V @ 50μA | 2820pF @ 15V | 92nC @ 10V | 64ns | 120 ns | 20V | -30V | -1.8 V | 16A Ta | 30V | 330 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSC123N08NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 66W | 12 ns | 80V | 2.5W Ta 66W Tc | 11A | SWITCHING | 19 ns | SILICON | N-Channel | 12.3m Ω @ 33A, 10V | 3.5V @ 33μA | 1870pF @ 40V | 25nC @ 10V | 18ns | 4 ns | 20V | 55A | 11A Ta 55A Tc | 220A | 70 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRF7425TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead | Tin | -15A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 8.2MOhm | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | 1 | Single | 2.5W | 13 ns | -1.2V | 2.5W Ta | 180 ns | -15A | 150°C | SWITCHING | 230 ns | SILICON | P-Channel | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 20ns | 160 ns | 12V | -20V | 20V | 1.2 V | 15A Ta | 60A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
IRF6648TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 5.45mm | ROHS3 Compliant | Lead Free | 86A | No | 5 | LOW CONDUCTION LOSS | DirectFET™ Isometric MN | No SVHC | 508μm | 5.05mm | Surface Mount | -40°C~150°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 89W | 16 ns | 4V | 2.8W Ta 89W Tc | 86mA | SWITCHING | 0.007Ohm | 28 ns | SILICON | N-Channel | 7m Ω @ 17A, 10V | 4.9V @ 150μA | 2120pF @ 25V | 50nC @ 10V | 29ns | 13 ns | 20V | 60V | 86A Tc | 260A | 47 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFR3710ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 140W Tc | SWITCHING | 0.018Ohm | 100V | SILICON | N-Channel | 18m Ω @ 33A, 10V | 4V @ 250μA | 2930pF @ 25V | 100nC @ 10V | 42A | 42A Tc | 100V | 220A | 150 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSP171PH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Cut Tape (CT) | 2005 | SIPMOS® | yes | Active | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 6.5mm | ROHS3 Compliant | Lead Free | Tin | No | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | No SVHC | 1.6mm | 6.7mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 19A | e3 | DUAL | GULL WING | 4 | Other Transistors | 60V | 1 | DRAIN | Halogen Free | Single | 1.8W | 6 ns | 1.5V | -60V | 1.8W Ta | 1.45A | 0.3Ohm | 208 ns | SILICON | P-Channel | 300m Ω @ 1.9A, 10V | 2V @ 460μA | 460pF @ 25V | 20nC @ 10V | 25ns | 87 ns | 20V | 60V | -60V | 1.5 V | 1.9A Ta | 55 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRLML2502TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 2.794mm | ROHS3 Compliant | Lead Free | Tin | 4.2A | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.016mm | 3.05mm | 45mOhm | Surface Mount | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | FET General Purpose Power | 1 | Single | 1.25W | 7.5 ns | 1.2V | 1.25W Ta | 4.2A | SWITCHING | 54 ns | SILICON | N-Channel | 45m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 740pF @ 15V | 12nC @ 5V | 10ns | 26 ns | 12V | 20V | 20V | 1.2 V | 4.2A Ta | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
SI4420DYTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 12.5A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 9mOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | Single | 2.5W | 15 ns | 1V | 2.5W Ta | 12.5A | SWITCHING | 55 ns | SILICON | N-Channel | 9m Ω @ 12.5A, 10V | 1V @ 250μA | 2240pF @ 15V | 78nC @ 10V | 10ns | 47 ns | 20V | 30V | 1 V | 12.5A Ta | 50A | 400 mJ | 4.5V 10V | ±20V |
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