Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRF9540NSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.1W Ta 110W Tc | SWITCHING | 0.117Ohm | 100V | SILICON | P-Channel | 117m Ω @ 14A, 10V | 4V @ 250μA | 1450pF @ 25V | 110nC @ 10V | 23A | 23A Tc | 100V | 92A | 84 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPP80N04S204AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | No | 3 | AVALANCHE RATED | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 26 ns | 40V | 300W Tc | 80A | 56 ns | SILICON | N-Channel | 3.7m Ω @ 80A, 10V | 4V @ 250μA | 5300pF @ 25V | 170nC @ 10V | 45ns | 32 ns | 20V | 80A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPS075N03LGAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-251-3 Stub Leads, IPak | No SVHC | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 47W | 47W Tc | 50A | SWITCHING | SILICON | N-Channel | 7.5m Ω @ 30A, 10V | 2.2V @ 250μA | 1900pF @ 15V | 18nC @ 10V | 20V | 50A Tc | 30V | 50 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
SPP08P06PHXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1999 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 42W | 16 ns | -60V | 42W Tc | 8.8A | 48 ns | SILICON | P-Channel | 300m Ω @ 6.2A, 10V | 4V @ 250μA | 420pF @ 25V | 15nC @ 10V | 46ns | 14 ns | 20V | 8.8A Tc | 60V | 70 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRF8734PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 13 ns | 2.5W Ta | 30 ns | 21A | SWITCHING | 0.0035Ohm | 15 ns | SILICON | N-Channel | 3.5m Ω @ 21A, 10V | 2.35V @ 50μA | 3175pF @ 15V | 30nC @ 4.5V | 16ns | 8 ns | 20V | 30V | 1.8 V | 21A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFS4115PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 12.1MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 375W | 18 ns | 5V | 375W Tc | 99A | SWITCHING | 41 ns | SILICON | N-Channel | 12.1m Ω @ 62A, 10V | 5V @ 250μA | 5270pF @ 50V | 120nC @ 10V | 73ns | 39 ns | 20V | 150V | 150V | 5 V | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||
IPW60R250CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2011 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | TIN | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | FET General Purpose Power | Not Qualified | 1 | Single | 104W | 104W Tc | 12A | SWITCHING | 0.25Ohm | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 1200pF @ 100V | 35nC @ 10V | 20V | 600V | 3 V | 12A Tc | 650V | 40A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFS4615PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 144W | 15 ns | 5V | 144W Tc | 33A | SWITCHING | 0.042Ohm | 25 ns | SILICON | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 40nC @ 10V | 35ns | 20 ns | 20V | 150V | 150V | 5 V | 33A Tc | 10V | ±20V | ||||||||||||||||||||||||||||
IRLR3636PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 6.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 143W | 45 ns | 2.5V | 143W Tc | 99A | 43 ns | N-Channel | 6.8m Ω @ 50A, 10V | 2.5V @ 100μA | 3779pF @ 50V | 49nC @ 4.5V | 216ns | 96 ns | 16V | 60V | 50A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
IRFS4127PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2007 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 22MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 375W | 17 ns | 5V | 375W Tc | 72A | SWITCHING | 56 ns | SILICON | N-Channel | 22m Ω @ 44A, 10V | 5V @ 250μA | 5380pF @ 50V | 150nC @ 10V | 18ns | 22 ns | 20V | 200V | 200V | 5 V | 72A Tc | 250 mJ | 10V | ±20V | ||||||||||||||||||||||||||
IRLS4030PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.572mm | 9.65mm | 4.3MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | Single | 370W | 74 ns | 2.5V | 370W Tc | 190A | SWITCHING | 110 ns | SILICON | N-Channel | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 11360pF @ 50V | 130nC @ 4.5V | 330ns | 170 ns | 16V | 100V | 100V | 2.5 V | 180A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
IRLS4030-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 10.3378mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.3434mm | 6.85mm | 3.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 370W | 53 ns | 2.5V | 370W Tc | 190A | 110 ns | N-Channel | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 11490pF @ 50V | 140nC @ 4.5V | 160ns | 87 ns | 16V | 100V | 100V | 2.5 V | 190A Tc | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IRF8714GTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 4.9784mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | Single | 2.5W | 10 ns | 2.5W Ta | 14A | 11 ns | N-Channel | 8.7m Ω @ 14A, 10V | 2.35V @ 25μA | 1020pF @ 15V | 12nC @ 4.5V | 9.9ns | 5 ns | 20V | 30V | 14A Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSZ105N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | 8 | S-PDSO-N5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35W | 7 ns | 40V | 2.1W Ta 35W Tc | 11A | SWITCHING | 9.5 ns | SILICON | N-Channel | 10.5m Ω @ 20A, 10V | 4V @ 14μA | 1300pF @ 20V | 17nC @ 10V | 1.2ns | 2.6 ns | 20V | 11A Ta 40A Tc | 20 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSZ165N04NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 8 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 25W | 5.4 ns | 40V | 2.1W Ta 25W Tc | 8.9A | SWITCHING | 6.8 ns | SILICON | N-Channel | 16.5m Ω @ 20A, 10V | 4V @ 10μA | 840pF @ 20V | 10nC @ 10V | 1ns | 2.2 ns | 20V | 8.9A Ta 31A Tc | 5 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF7342D2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tube | 2004 | FETKY™ | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 4.9784mm | RoHS Compliant | Lead Free | -3.4A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 105MOhm | Surface Mount | -55°C~150°C TJ | -55V | MOSFET (Metal Oxide) | Other Transistors | 1 | Single | 2W | 14 ns | -1V | 2W Ta | -3.4A | 43 ns | P-Channel | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 690pF @ 25V | 38nC @ 10V | 10ns | 22 ns | 20V | -55V | -55V | Schottky Diode (Isolated) | -1 V | 3.4A Ta | 55V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRF8010SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 260W Tc | SWITCHING | 0.015Ohm | 100V | SILICON | N-Channel | 15m Ω @ 45A, 10V | 4V @ 250μA | 3830pF @ 25V | 120nC @ 10V | 75A | 80A Tc | 100V | 320A | 310 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPS060N03LGAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-251-3 Stub Leads, IPak | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 56W | 5 ns | 56W Tc | 50A | SWITCHING | 0.009Ohm | 20 ns | SILICON | N-Channel | 6m Ω @ 30A, 10V | 2.2V @ 250μA | 2400pF @ 15V | 23nC @ 10V | 3ns | 20V | 50A Tc | 30V | 60 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFU4620PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | 6.73mm | RoHS Compliant | Lead Free | Tin | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 2.39mm | 6.22mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 144W | 13.4 ns | 144W Tc | 24A | SWITCHING | 0.078Ohm | 25.4 ns | SILICON | N-Channel | 78m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 200V | 5 V | 24A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||
IRFR4620PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tube | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 78MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 144W | 13.4 ns | 5V | 144W Tc | 24A | 25.4 ns | N-Channel | 78m Ω @ 15A, 10V | 5V @ 100μA | 1710pF @ 50V | 38nC @ 10V | 22.4ns | 14.8 ns | 20V | 200V | 200V | 5 V | 24A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IPB100N04S204ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 0.0033Ohm | 40V | SILICON | N-Channel | 3.3m Ω @ 80A, 10V | 4V @ 250μA | 5300pF @ 25V | 172nC @ 10V | 100A | 100A Tc | 40V | 400A | 810 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPA100N08N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 35W | 13 ns | 80V | 35W Tc | 40A | SWITCHING | 23 ns | SILICON | N-Channel | 10m Ω @ 40A, 10V | 3.5V @ 46μA | 2410pF @ 40V | 35nC @ 10V | 30ns | 5 ns | 20V | 40A Tc | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPB100N06S2L05ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2005 | OptiMOS™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 0.0056Ohm | 55V | SILICON | N-Channel | 4.4m Ω @ 80A, 10V | 2V @ 250μA | 5660pF @ 25V | 230nC @ 10V | 100A | 100A Tc | 55V | 400A | 810 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPD50R399CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2007 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | TIN | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 83W Tc | SWITCHING | 0.399Ohm | 500V | SILICON | N-Channel | 399m Ω @ 4.9A, 10V | 3.5V @ 330μA | 890pF @ 100V | 23nC @ 10V | 9A | 9A Tc | 550V | 20A | 215 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPD25N06S240ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 8 ns | 55V | 68W Tc | 29A | 0.04Ohm | 18 ns | SILICON | N-Channel | 40m Ω @ 13A, 10V | 4V @ 26μA | 513pF @ 25V | 18nC @ 10V | 20ns | 19 ns | 20V | 29A Tc | 116A | 80 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPI50R140CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | CoolMOS™ | Obsolete | 1 (Unlimited) | Through Hole | RoHS Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | Halogen Free | Single | 192W | 35 ns | 500V | 192W Tc | 23A | 80 ns | N-Channel | 140m Ω @ 14A, 10V | 3.5V @ 930μA | 2540pF @ 100V | 64nC @ 10V | 14ns | 8 ns | 20V | 500V | 550V | 3 V | 23A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRF7450 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tube | 2001 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | AVALANCHE RATED | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e0 | TIN LEAD | DUAL | GULL WING | 245 | 30 | YES | R-PDSO-G8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.17Ohm | 200V | SILICON | N-Channel | 170m Ω @ 1.5A, 10V | 5.5V @ 250μA | 940pF @ 25V | 39nC @ 10V | 2.5A | 2.5A Ta | 200V | 20A | 230 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
IRF7425TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Surface Mount | Tape & Reel (TR) | 2001 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | Contains Lead | -15A | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | -20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | 15A | SWITCHING | SILICON | P-Channel | 8.2m Ω @ 15A, 4.5V | 1.2V @ 250μA | 7980pF @ 15V | 130nC @ 4.5V | 20ns | 15A Ta | 20V | 60A | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
IRF8707PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2007 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 3.9878mm | 11.9MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 6.7 ns | 1.8V | 2.5W Ta | 18 ns | 11A | SWITCHING | 7.3 ns | SILICON | N-Channel | 11.9m Ω @ 11A, 10V | 2.35V @ 25μA | 760pF @ 15V | 9.3nC @ 4.5V | 7.9ns | 4.4 ns | 20V | 30V | 30V | 1.8 V | 11A Ta | 53 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IRF8721PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2007 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.4986mm | 3.9878mm | 8.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 1 | Single | 2.5W | 8.2 ns | 2.35V | 2.5W Ta | 21 ns | 14A | 8.1 ns | N-Channel | 8.5m Ω @ 14A, 10V | 2.35V @ 25μA | 1040pF @ 15V | 12nC @ 4.5V | 11ns | 7 ns | 20V | 30V | 2.35 V | 14A Ta | 4.5V 10V | ±20V |
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