All Products

Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
IRF9540NSPBF IRF9540NSPBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.1W Ta 110W Tc SWITCHING 0.117Ohm 100V SILICON P-Channel 117m Ω @ 14A, 10V 4V @ 250μA 1450pF @ 25V 110nC @ 10V 23A 23A Tc 100V 92A 84 mJ 10V ±20V
IPP80N04S204AKSA1 IPP80N04S204AKSA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 17 Weeks Through Hole Tube 2006 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead No 3 AVALANCHE RATED TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 300W 26 ns 40V 300W Tc 80A 56 ns SILICON N-Channel 3.7m Ω @ 80A, 10V 4V @ 250μA 5300pF @ 25V 170nC @ 10V 45ns 32 ns 20V 80A Tc 10V ±20V
IPS075N03LGAKMA1 IPS075N03LGAKMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 47W 47W Tc 50A SWITCHING SILICON N-Channel 7.5m Ω @ 30A, 10V 2.2V @ 250μA 1900pF @ 15V 18nC @ 10V 20V 50A Tc 30V 50 mJ 4.5V 10V ±20V
SPP08P06PHXKSA1 SPP08P06PHXKSA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 12 Weeks Through Hole Tube 1999 SIPMOS® yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 AVALANCHE RATED TO-220-3 No SVHC Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 42W 16 ns -60V 42W Tc 8.8A 48 ns SILICON P-Channel 300m Ω @ 6.2A, 10V 4V @ 250μA 420pF @ 25V 15nC @ 10V 46ns 14 ns 20V 8.8A Tc 60V 70 mJ 10V ±20V
IRF8734PBF IRF8734PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 8 EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 4mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 13 ns 2.5W Ta 30 ns 21A SWITCHING 0.0035Ohm 15 ns SILICON N-Channel 3.5m Ω @ 21A, 10V 2.35V @ 50μA 3175pF @ 15V 30nC @ 4.5V 16ns 8 ns 20V 30V 1.8 V 21A Ta 4.5V 10V ±20V
IRFS4115PBF IRFS4115PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 12.1MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 375W 18 ns 5V 375W Tc 99A SWITCHING 41 ns SILICON N-Channel 12.1m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 73ns 39 ns 20V 150V 150V 5 V 195A Tc 10V ±20V
IPW60R250CP IPW60R250CP Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Tube 2011 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 TO-247-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN NOT SPECIFIED NOT SPECIFIED 3 NO FET General Purpose Power Not Qualified 1 Single 104W 104W Tc 12A SWITCHING 0.25Ohm SILICON N-Channel 250m Ω @ 7.8A, 10V 3.5V @ 440μA 1200pF @ 100V 35nC @ 10V 20V 600V 3 V 12A Tc 650V 40A 10V ±20V
IRFS4615PBF IRFS4615PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 144W 15 ns 5V 144W Tc 33A SWITCHING 0.042Ohm 25 ns SILICON N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 40nC @ 10V 35ns 20 ns 20V 150V 150V 5 V 33A Tc 10V ±20V
IRLR3636PBF IRLR3636PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 6.8MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 143W 45 ns 2.5V 143W Tc 99A 43 ns N-Channel 6.8m Ω @ 50A, 10V 2.5V @ 100μA 3779pF @ 50V 49nC @ 4.5V 216ns 96 ns 16V 60V 50A Tc 4.5V 10V ±16V
IRFS4127PBF IRFS4127PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 16 Weeks Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 22MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 375W 17 ns 5V 375W Tc 72A SWITCHING 56 ns SILICON N-Channel 22m Ω @ 44A, 10V 5V @ 250μA 5380pF @ 50V 150nC @ 10V 18ns 22 ns 20V 200V 200V 5 V 72A Tc 250 mJ 10V ±20V
IRLS4030PBF IRLS4030PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm 4.3MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 Single 370W 74 ns 2.5V 370W Tc 190A SWITCHING 110 ns SILICON N-Channel 4.3m Ω @ 110A, 10V 2.5V @ 250μA 11360pF @ 50V 130nC @ 4.5V 330ns 170 ns 16V 100V 100V 2.5 V 180A Tc 4.5V 10V ±16V
IRLS4030-7PPBF IRLS4030-7PPBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.3378mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.3434mm 6.85mm 3.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 53 ns 2.5V 370W Tc 190A 110 ns N-Channel 3.9m Ω @ 110A, 10V 2.5V @ 250μA 11490pF @ 50V 140nC @ 4.5V 160ns 87 ns 16V 100V 100V 2.5 V 190A Tc 4.5V 10V ±16V
IRF8714GTRPBF IRF8714GTRPBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power Single 2.5W 10 ns 2.5W Ta 14A 11 ns N-Channel 8.7m Ω @ 14A, 10V 2.35V @ 25μA 1020pF @ 15V 12nC @ 4.5V 9.9ns 5 ns 20V 30V 14A Ta 4.5V 10V ±20V
BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL 8 S-PDSO-N5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 35W 7 ns 40V 2.1W Ta 35W Tc 11A SWITCHING 9.5 ns SILICON N-Channel 10.5m Ω @ 20A, 10V 4V @ 14μA 1300pF @ 20V 17nC @ 10V 1.2ns 2.6 ns 20V 11A Ta 40A Tc 20 mJ 10V ±20V
BSZ165N04NSGATMA1 BSZ165N04NSGATMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 12 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Obsolete 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead No 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 FET General Purpose Powers 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 25W 5.4 ns 40V 2.1W Ta 25W Tc 8.9A SWITCHING 6.8 ns SILICON N-Channel 16.5m Ω @ 20A, 10V 4V @ 10μA 840pF @ 20V 10nC @ 10V 1ns 2.2 ns 20V 8.9A Ta 31A Tc 5 mJ 10V ±20V
IRF7342D2PBF IRF7342D2PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

Surface Mount Tube 2004 FETKY™ Obsolete 1 (Unlimited) SMD/SMT EAR99 4.9784mm RoHS Compliant Lead Free -3.4A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 105MOhm Surface Mount -55°C~150°C TJ -55V MOSFET (Metal Oxide) Other Transistors 1 Single 2W 14 ns -1V 2W Ta -3.4A 43 ns P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 690pF @ 25V 38nC @ 10V 10ns 22 ns 20V -55V -55V Schottky Diode (Isolated) -1 V 3.4A Ta 55V 4.5V 10V ±20V
IRF8010SPBF IRF8010SPBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 260W Tc SWITCHING 0.015Ohm 100V SILICON N-Channel 15m Ω @ 45A, 10V 4V @ 250μA 3830pF @ 25V 120nC @ 10V 75A 80A Tc 100V 320A 310 mJ 10V ±20V
IPS060N03LGAKMA1 IPS060N03LGAKMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 14 Weeks Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 56W 5 ns 56W Tc 50A SWITCHING 0.009Ohm 20 ns SILICON N-Channel 6m Ω @ 30A, 10V 2.2V @ 250μA 2400pF @ 15V 23nC @ 10V 3ns 20V 50A Tc 30V 60 mJ 4.5V 10V ±20V
IRFU4620PBF IRFU4620PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 6.73mm RoHS Compliant Lead Free Tin No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.39mm 6.22mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 260 30 FET General Purpose Power 1 DRAIN Single 144W 13.4 ns 144W Tc 24A SWITCHING 0.078Ohm 25.4 ns SILICON N-Channel 78m Ω @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 22.4ns 14.8 ns 20V 200V 200V 5 V 24A Tc 10V ±20V
IRFR4620PBF IRFR4620PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 19 Weeks Surface Mount Tube 2009 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.73mm ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 78MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 144W 13.4 ns 5V 144W Tc 24A 25.4 ns N-Channel 78m Ω @ 15A, 10V 5V @ 100μA 1710pF @ 50V 38nC @ 10V 22.4ns 14.8 ns 20V 200V 200V 5 V 24A Tc 10V ±20V
IPB100N04S204ATMA1 IPB100N04S204ATMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc 0.0033Ohm 40V SILICON N-Channel 3.3m Ω @ 80A, 10V 4V @ 250μA 5300pF @ 25V 172nC @ 10V 100A 100A Tc 40V 400A 810 mJ 10V ±20V
IPA100N08N3GXKSA1 IPA100N08N3GXKSA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Through Hole Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 35W 13 ns 80V 35W Tc 40A SWITCHING 23 ns SILICON N-Channel 10m Ω @ 40A, 10V 3.5V @ 46μA 2410pF @ 40V 35nC @ 10V 30ns 5 ns 20V 40A Tc 6V 10V ±20V
IPB100N06S2L05ATMA1 IPB100N06S2L05ATMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Tape & Reel (TR) 2005 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc 0.0056Ohm 55V SILICON N-Channel 4.4m Ω @ 80A, 10V 2V @ 250μA 5660pF @ 25V 230nC @ 10V 100A 100A Tc 55V 400A 810 mJ 4.5V 10V ±20V
IPD50R399CP IPD50R399CP Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Tape & Reel (TR) 2007 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 TIN SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 83W Tc SWITCHING 0.399Ohm 500V SILICON N-Channel 399m Ω @ 4.9A, 10V 3.5V @ 330μA 890pF @ 100V 23nC @ 10V 9A 9A Tc 550V 20A 215 mJ 10V ±20V
IPD25N06S240ATMA1 IPD25N06S240ATMA1 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 8 ns 55V 68W Tc 29A 0.04Ohm 18 ns SILICON N-Channel 40m Ω @ 13A, 10V 4V @ 26μA 513pF @ 25V 18nC @ 10V 20ns 19 ns 20V 29A Tc 116A 80 mJ 10V ±20V
IPI50R140CP IPI50R140CP Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Through Hole Tube 2007 CoolMOS™ Obsolete 1 (Unlimited) Through Hole RoHS Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) Halogen Free Single 192W 35 ns 500V 192W Tc 23A 80 ns N-Channel 140m Ω @ 14A, 10V 3.5V @ 930μA 2540pF @ 100V 64nC @ 10V 14ns 8 ns 20V 500V 550V 3 V 23A Tc 10V ±20V
IRF7450 IRF7450 Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

Tube 2001 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant AVALANCHE RATED 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 TIN LEAD DUAL GULL WING 245 30 YES R-PDSO-G8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.17Ohm 200V SILICON N-Channel 170m Ω @ 1.5A, 10V 5.5V @ 250μA 940pF @ 25V 39nC @ 10V 2.5A 2.5A Ta 200V 20A 230 mJ 10V ±30V
IRF7425TR IRF7425TR Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

Surface Mount Tape & Reel (TR) 2001 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant Contains Lead -15A 8 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ -20V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta 15A SWITCHING SILICON P-Channel 8.2m Ω @ 15A, 4.5V 1.2V @ 250μA 7980pF @ 15V 130nC @ 4.5V 20ns 15A Ta 20V 60A 2.5V 4.5V ±12V
IRF8707PBF IRF8707PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) 8 SMD/SMT EAR99 5mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.5mm 3.9878mm 11.9MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 6.7 ns 1.8V 2.5W Ta 18 ns 11A SWITCHING 7.3 ns SILICON N-Channel 11.9m Ω @ 11A, 10V 2.35V @ 25μA 760pF @ 15V 9.3nC @ 4.5V 7.9ns 4.4 ns 20V 30V 30V 1.8 V 11A Ta 53 mJ 4.5V 10V ±20V
IRF8721PBF IRF8721PBF Infineon Technologies $0.00
RFQ

Min: 1

Mult: 1

download 39 Weeks Surface Mount Tube 2007 HEXFET® Discontinued 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant Lead Free No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 8.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Single 2.5W 8.2 ns 2.35V 2.5W Ta 21 ns 14A 8.1 ns N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 2.35 V 14A Ta 4.5V 10V ±20V