Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPP65R280C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 104W | 13 ns | 650V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 105 ns | SILICON | N-Channel | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 950pF @ 100V | 45nC @ 10V | 11ns | 12 ns | 20V | 13.8A Tc | 39A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF9310PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 22 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 4.6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | R-PDSO-G3 | 1 | Other Transistors | 1 | DRAIN | Single | 2.5W | 25 ns | -1.8V | 2.5W Ta | 107 ns | -20A | 150°C | SWITCHING | 65 ns | SILICON | P-Channel | 4.6m Ω @ 20A, 10V | 2.4V @ 100μA | 5250pF @ 15V | 165nC @ 10V | 47ns | 70 ns | 20V | -30V | -1.8 V | 20A Tc | 30V | 630 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IPD200N15N3GBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | FET General Purpose Powers | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | SWITCHING | 0.02Ohm | 150V | SILICON | N-Channel | 20m Ω @ 50A, 10V | 4V @ 90μA | 1820pF @ 75V | 31nC @ 10V | 50A | 50A Tc | 150V | 200A | 170 mJ | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
BSZ120P03NS3EGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | ESD PROTECTED | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 52W | -30V | 2.1W Ta 52W Tc | 40A | SWITCHING | 0.02Ohm | SILICON | P-Channel | 12m Ω @ 20A, 10V | 3.1V @ 73μA | 3360pF @ 15V | 45nC @ 10V | 11ns | 25V | 11A Ta 40A Tc | 30V | 73 mJ | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||
IPP80P03P4L07AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 8 ns | -30V | 88W Tc | 80A | SWITCHING | 0.0072Ohm | 15 ns | SILICON | P-Channel | 7.2m Ω @ 80A, 10V | 2V @ 130μA | 5700pF @ 25V | 80nC @ 10V | 4ns | 60 ns | 5V | 80A Tc | 30V | 4.5V 10V | +5V, -16V | ||||||||||||||||||||||||||||||||||||||||
IPP60R520C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2011 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 66W | 13 ns | 600V | 66W Tc | 8.1A | SWITCHING | 0.52Ohm | 85 ns | SILICON | N-Channel | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 512pF @ 100V | 23.4nC @ 10V | 10ns | 14 ns | 20V | 8.1A Tc | 22A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPP45P03P4L11AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 7 ns | -30V | 58W Tc | 45A | 0.0111Ohm | 45 ns | SILICON | P-Channel | 11.1m Ω @ 45A, 10V | 2V @ 85μA | 3770pF @ 25V | 55nC @ 10V | 3ns | 14 ns | 5V | 45A Tc | 30V | 180A | 110 mJ | 4.5V 10V | +5V, -16V | |||||||||||||||||||||||||||||||||||||||
IRF6201TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 29 ns | 2.5W Ta | 27A | SWITCHING | 0.00245Ohm | 320 ns | SILICON | N-Channel | 2.45m Ω @ 27A, 4.5V | 1.1V @ 100μA | 8555pF @ 16V | 195nC @ 4.5V | 100ns | 265 ns | 12V | 20V | 27A Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
IRF7410GTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | No | 8 | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 2.5W | 13 ns | 2.5W Ta | 16A | SWITCHING | 0.007Ohm | 271 ns | SILICON | P-Channel | 7m Ω @ 16A, 4.5V | 900mV @ 250μA | 8676pF @ 10V | 91nC @ 4.5V | 18ns | 300 ns | 8V | -12V | 16A Ta | 12V | 65A | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
IPW65R310CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | 1 | SINGLE WITH BUILT-IN DIODE | 11 ns | 650V | 104.2W Tc | 11.4A | SWITCHING | 45 ns | SILICON | N-Channel | 310m Ω @ 4.4A, 10V | 4.5V @ 440μA | 1100pF @ 100V | 41nC @ 10V | 7.5ns | 7 ns | 20V | 11.4A Tc | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
AUIRF1324S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | Single | 300W | 17 ns | 2V | 300W Tc | 195A | SWITCHING | 83 ns | SILICON | N-Channel | 1.65m Ω @ 195A, 10V | 4V @ 250μA | 7590pF @ 24V | 240nC @ 10V | 190ns | 120 ns | 20V | 24V | 195A Tc | 270 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPW65R280E6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 104W | 11 ns | 650V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 76 ns | SILICON | N-Channel | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 950pF @ 100V | 45nC @ 10V | 9ns | 20V | 13.8A Tc | 39A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPD60R1K4C6 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2011 | CoolMOS™ | yes | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 28.4W Tc | SWITCHING | 600V | SILICON | N-Channel | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 200pF @ 100V | 9.4nC @ 10V | 3.2A | 3.2A Tc | 600V | 8A | 26 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPA60R520E6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 12 ns | 600V | 29W Tc | 8.1A | SWITCHING | 0.52Ohm | 75 ns | SILICON | N-Channel | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 512pF @ 100V | 23.4nC @ 10V | 10ns | 9 ns | 20V | 8.1A Tc | 22A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRFR3710Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 18MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | Single | 140W | 14 ns | 2V | 140W Tc | 42A | SWITCHING | 53 ns | SILICON | N-Channel | 18m Ω @ 33A, 10V | 4V @ 250μA | 2930pF @ 25V | 100nC @ 10V | 43ns | 42 ns | 20V | 100V | 2 V | 42A Tc | 220A | 200 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRFR3504Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Tin | No | 2 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 90W | 15 ns | 2V | 90W Tc | 42A | SWITCHING | 0.009Ohm | 30 ns | SILICON | N-Channel | 9m Ω @ 42A, 10V | 4V @ 250μA | 1510pF @ 25V | 45nC @ 10V | 74ns | 38 ns | 20V | 40V | 42A Tc | 77 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRF3805S-7P | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | EAR99 | 10.35mm | ROHS3 Compliant | Tin | No | 7 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.55mm | 10.05mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 23 ns | 2V | 300W Tc | 240A | SWITCHING | 0.0026Ohm | 80 ns | SILICON | N-Channel | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 7820pF @ 25V | 200nC @ 10V | 130ns | 52 ns | 20V | 55V | 160A Tc | 680 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRFR4105 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 68W | 7 ns | 2V | 68W Tc | 27A | SWITCHING | 0.0245Ohm | 31 ns | SILICON | N-Channel | 45m Ω @ 16A, 10V | 4V @ 250μA | 700pF @ 25V | 34nC @ 10V | 49ns | 40 ns | 20V | 55V | 20A Tc | 29 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRFR5410 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 66W | 15 ns | -2V | 66W Tc | 13A | SWITCHING | 0.205Ohm | 45 ns | SILICON | P-Channel | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 760pF @ 25V | 58nC @ 10V | 58ns | 46 ns | 20V | -100V | 13A Tc | 100V | 52A | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRF4104S | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-XSSO-G2 | FET General Purpose Power | 1 | Single | 140W | 16 ns | 2V | 140W Tc | 75A | SWITCHING | 0.0055Ohm | 38 ns | SILICON | N-Channel | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 3000pF @ 25V | 100nC @ 10V | 130ns | 77 ns | 20V | 40V | 75A Tc | 470A | 220 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRFB3207 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.66mm | RoHS Compliant | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 300W | 29 ns | 2V | 300W Tc | 75A | SWITCHING | 0.0045Ohm | 68 ns | SILICON | N-Channel | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 7600pF @ 50V | 260nC @ 10V | 120ns | 74 ns | 20V | 75V | 75A Tc | 720A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
AUIRFR48Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 11MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 91W | 15 ns | 2V | 91W Tc | 42A | SWITCHING | 40 ns | SILICON | N-Channel | 11m Ω @ 37A, 10V | 4V @ 50μA | 1720pF @ 25V | 60nC @ 10V | 61ns | 35 ns | 20V | 55V | 42A Tc | 250A | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRL3705ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 130W | 17 ns | 130W Tc | 75A | SWITCHING | 26 ns | SILICON | N-Channel | 8m Ω @ 52A, 10V | 3V @ 250μA | 2880pF @ 25V | 60nC @ 5V | 240ns | 83 ns | 16V | 55V | 75A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
AUIRLR024N | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 45W | 7.1 ns | 1V | 45W Tc | 17A | SWITCHING | 0.08Ohm | 20 ns | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 74ns | 29 ns | 16V | 55V | 17A Tc | 72A | 68 mJ | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
AUIRFZ44ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.3mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 80W | 14 ns | 2V | 80W Tc | 51A | SWITCHING | 33 ns | SILICON | N-Channel | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 1420pF @ 25V | 43nC @ 10V | 68ns | 41 ns | 20V | 55V | 51A Tc | 200A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRL6342PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | No | 8 | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 6 ns | 1.1V | 2.5W Ta | 20 ns | 9.9A | 150°C | SWITCHING | 33 ns | SILICON | N-Channel | 14.6m Ω @ 9.9A, 4.5V | 1.1V @ 10μA | 1025pF @ 25V | 11nC @ 4.5V | 12ns | 14 ns | 12V | 30V | 1.1 V | 9.9A Ta | 79A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
IRLHS2242TR2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2011 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 2.1mm | RoHS Compliant | Lead Free | No | 6 | 6-PowerVDFN | No SVHC | 950μm | 2.1mm | Surface Mount | MOSFET (Metal Oxide) | 2.1W | 1 | Single | 2.1W | 7.9 ns | -800mV | 31mOhm | 6-PQFN (2x2) | 41 ns | 7.2A | 54 ns | P-Channel | 31mOhm @ 8.5A, 4.5V | 1.1V @ 10μA | 877pF @ 10V | 12nC @ 10V | 54ns | 66 ns | 12V | -20V | -800 mV | 7.2A Ta 15A Tc | 20V | 870pF | 31 mΩ | |||||||||||||||||||||||||||||||||||||||||||
IRFH8318TR2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 5.85mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.17mm | 5mm | 3.1MOhm | Surface Mount | MOSFET (Metal Oxide) | 3.6W | 1 | Single | 3.6W | 15 ns | 1.8V | 3.1mOhm | PQFN (5x6) | 24 ns | 27A | 18 ns | N-Channel | 3.1mOhm @ 20A, 10V | 2.35V @ 50μA | 3180pF @ 10V | 41nC @ 10V | 33ns | 12 ns | 20V | 30V | 1.8 V | 27A Ta 120A Tc | 30V | 3.18nF | 3.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||
IRLML6402GTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Discontinued | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 1.397mm | 65MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRLML6402GTRPBF | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Other Transistors | 1 | Single | 1.3W | 350 ns | 1.3W Ta | -3.7A | 150°C | SWITCHING | 588 ns | SILICON | P-Channel | 65m Ω @ 3.7A, 4.5V | 1.2V @ 250μA | 633pF @ 10V | 12nC @ 5V | 48ns | 381 ns | 12V | -20V | 3.7A Ta | 20V | 22A | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||
IRLML2502GTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | 1.016mm | 1.397mm | 45MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 1.25W | 7.5 ns | 1.25W Ta | 4.2A | SWITCHING | 54 ns | SILICON | N-Channel | 45m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 740pF @ 15V | 12nC @ 5V | 10ns | 26 ns | 12V | 20V | 4.2A Ta | 2.5V 4.5V | ±12V |
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