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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRL8113PBF IRL8113PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 105A No 3 TO-220-3 No SVHC 8.77mm 4.69mm 6MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 110W 14 ns 2.25V 110W Tc 27 ns 105A SWITCHING 18 ns SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 38ns 5 ns 20V 30V 30V 2.25 V 42A 105A Tc 420A 220 mJ 4.5V 10V ±20V
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    		 download Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 110W Tc SWITCHING 0.006Ohm 30V SILICON N-Channel 6m Ω @ 21A, 10V 2.25V @ 250μA 2840pF @ 15V 35nC @ 4.5V 42A 105A Tc 30V 420A 220 mJ 4.5V 10V ±20V
    IRF3709ZSPBF IRF3709ZSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 10.668mm RoHS Compliant Lead Free 87A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 6.3MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 79mW 13 ns 2.25V 6.3mOhm D2PAK 79W Tc 24 ns 87A 16 ns N-Channel 6.3mOhm @ 21A, 10V 2.25V @ 250μA 2130pF @ 15V 26nC @ 4.5V 41ns 4.7 ns 20V 30V 2.25 V 87A Tc 30V 2.13nF 4.5V 10V ±20V 6.3 mΩ
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    		 download 9 Weeks Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 36A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 26.5mOhm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 92W 15 ns 4V 92W Tc 50 ns 36A SWITCHING 43 ns SILICON N-Channel 26.5m Ω @ 22A, 10V 4V @ 250μA 1770pF @ 25V 63nC @ 10V 51ns 39 ns 20V 100V 100V 4 V 36A Tc 10V ±20V
    IRF6215SPBF IRF6215SPBF Infineon Technologies $0.00
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 110W Tc SWITCHING 0.29Ohm 150V SILICON P-Channel 290m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 13A 13A Tc 150V 44A 310 mJ 10V ±20V
    IRFZ34NSPBF IRFZ34NSPBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 68W Tc SWITCHING 0.04Ohm 55V SILICON N-Channel 40m Ω @ 16A, 10V 4V @ 250μA 700pF @ 25V 34nC @ 10V 29A 29A Tc 55V 100A 130 mJ 10V ±20V
    IRL7833SPBF IRL7833SPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 150A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 5.084mm 9.65mm 3.8MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 140W 18 ns 1.4V 140W Tc 63 ns 150A 175°C 21 ns N-Channel 3.8m Ω @ 38A, 10V 2.3V @ 250μA 4170pF @ 15V 47nC @ 4.5V 50ns 6.9 ns 20V 30V 2.3 V 150A Tc 4.5V 10V ±20V
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    		 Surface Mount Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free 21A No 3 AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 84W 9.6 ns 4V 3.8W Ta 94W Tc 21A SWITCHING 0.082Ohm 49 ns SILICON N-Channel 82m Ω @ 12A, 10V 4V @ 250μA 1300pF @ 25V 95nC @ 10V 32ns 38 ns 20V 150V 150V 4 V 21A Tc 84A 10V ±20V
    IRF9Z34NLPBF IRF9Z34NLPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 1997 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.67mm RoHS Compliant Lead Free -19A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE 260 30 Other Transistors 1 SINGLE WITH BUILT-IN DIODE DRAIN 68W 13 ns -4V 3.8W Ta 68W Tc -19A SWITCHING 0.1Ohm 30 ns SILICON P-Channel 100m Ω @ 10A, 10V 4V @ 250μA 620pF @ 25V 35nC @ 10V 55ns 41 ns 20V -55V -4 V 19A Tc 55V 68A 180 mJ 10V ±20V
    IRF9Z34NSPBF IRF9Z34NSPBF Infineon Technologies $0.00
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    		 download 18 Weeks Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 68W Tc SWITCHING 0.1Ohm 55V SILICON P-Channel 100m Ω @ 10A, 10V 4V @ 250μA 620pF @ 25V 35nC @ 10V 19A 19A Tc 55V 68A 180 mJ 10V ±20V
    IRL1004SPBF IRL1004SPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm RoHS Compliant Lead Free 130A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 6.5MOhm Surface Mount -55°C~175°C TJ 40V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.1W 16 ns 1V 3.8W Ta 200W Tc 120 ns 130A SWITCHING 25 ns SILICON N-Channel 6.5m Ω @ 78A, 10V 1V @ 250μA 5330pF @ 25V 100nC @ 4.5V 210ns 14 ns 16V 40V 40V 1 V 130A Tc 520A 700 mJ 4.5V 10V ±16V
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    		 download 16 Weeks Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 180W Tc N-Channel 11m Ω @ 43A, 10V 4V @ 250μA 3210pF @ 25V 120nC @ 10V 85A Tc 55V 10V ±20V
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    		 download Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 160W Tc SWITCHING 0.036Ohm 100V SILICON N-Channel 36m Ω @ 22A, 10V 4V @ 250μA 1900pF @ 25V 110nC @ 10V 42A 42A Tc 100V 140A 420 mJ 10V ±20V
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 9 EAR99 ROHS3 Compliant Lead Free No 15 DirectFET™ Isometric L8 No SVHC Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N9 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 125W 18 ns 3V 3.3W Ta 125W Tc 160A SWITCHING 0.0023Ohm 80 ns SILICON N-Channel 2.3m Ω @ 96A, 10V 4V @ 250μA 12222pF @ 25V 300nC @ 10V 37ns 300 ns 20V 75V 26A 375A Tc 640A 257 mJ 10V ±20V
    SPA20N65C3XKSA1 SPA20N65C3XKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 20.7A 3 AVALANCHE RATED TO-220-3 Full Pack Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 34.5W 10 ns 650V 34.5W Tc 20.7A SWITCHING 67 ns SILICON N-Channel 190m Ω @ 13.1A, 10V 3.9V @ 1mA 2400pF @ 25V 114nC @ 10V 5ns 4.5 ns 20V 20.7A Tc 690 mJ 10V ±20V
    SPW20N60CFDFKSA1 SPW20N60CFDFKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2005 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 20.7A No 3 AVALANCHE RATED TO-247-3 Through Hole -55°C~150°C TJ 650V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE 35W 12 ns 600V 208W Tc 20.7A SWITCHING 0.22Ohm 59 ns SILICON N-Channel 220m Ω @ 13.1A, 10V 5V @ 1mA 2400pF @ 25V 124nC @ 10V 15ns 6.4 ns 20V 20.7A Tc 52A 690 mJ 10V ±20V
    IPB407N30NATMA1 IPB407N30NATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.7mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 16 ns 300V 300W Tc 44A 175°C 0.0407Ohm 43 ns SILICON N-Channel 40.7m Ω @ 44A, 10V 4V @ 270μA 7180pF @ 100V 87nC @ 10V 20V 300V 44A Tc 240 mJ 10V ±20V
    IPA60R120P7XKSA1 IPA60R120P7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 28W Tc SWITCHING 0.12Ohm 600V SILICON N-Channel 120m Ω @ 8.2A, 10V 4V @ 410μA 1544pF @ 400V 36nC @ 10V 26A Tc 600V 78A 82 mJ 10V ±20V
    AUIRFP4409 AUIRFP4409 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2013 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant No 3 TO-247-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 18 ns 341W Tc 38A 34 ns N-Channel 69m Ω @ 24A, 10V 5V @ 250μA 5168pF @ 50V 125nC @ 10V 23ns 20 ns 20V 300V 38A Tc 10V ±20V
    AUIRFR6215TRL AUIRFR6215TRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2011 HEXFET® Active 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.52mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 Other Transistors 1 TO-252AA DRAIN Single 110W 14 ns 110W Tc -13A 175°C SWITCHING 0.295Ohm 53 ns SILICON P-Channel 295m Ω @ 6.6A, 10V 4V @ 250μA 860pF @ 25V 66nC @ 10V 36ns 37 ns 20V -150V 13A Tc 150V 44A 10V ±20V
    AUIRFZ44Z AUIRFZ44Z Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2000 HEXFET® Active 1 (Unlimited) 3 EAR99 10.67mm ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 80W 14 ns 2V 80W Tc 51A SWITCHING 33 ns SILICON N-Channel 13.9m Ω @ 31A, 10V 4V @ 250μA 1420pF @ 25V 43nC @ 10V 68ns 41 ns 20V 55V 51A Tc 200A 10V ±20V
    AUIRFU8403 AUIRFU8403 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2013 HEXFET® Active 1 (Unlimited) EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.39mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) 1 FET General Purpose Power Single 99W 10 ns 99W Tc 100A 31 ns N-Channel 3.1m Ω @ 76A, 10V 3.9V @ 100μA 3171pF @ 25V 99nC @ 10V 32ns 23 ns 20V 3 V 100A Tc 40V 10V ±20V
    BUZ30AH3045AATMA1 BUZ30AH3045AATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2004 SIPMOS® no Last Time Buy 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE DRAIN Halogen Free 125W 30 ns 200V 125W Tc 21A 250 ns SILICON N-Channel 130m Ω @ 13.5A, 10V 4V @ 1mA 1900pF @ 25V 70ns 90 ns 20V 21A Tc 84A 450 mJ 10V ±20V
    BSB008NE2LXXUMA1 BSB008NE2LXXUMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 1997 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 ULTRA LOW RESISTANCE 3-WDSON Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 12.6 ns 2.8W Ta 89W Tc 46A SWITCHING 0.0008Ohm 25V 75 ns SILICON N-Channel 0.8m Ω @ 30A, 10V 2V @ 250μA 16000pF @ 12V 343nC @ 10V 47.2ns 32.4 ns 20V 180A 46A Ta 180A Tc 25V 400A 600 mJ 4.5V 10V ±20V
    IPI80N06S407AKSA2 IPI80N06S407AKSA2 Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 15 ns 60V 79W Tc 80A 0.0071Ohm 23 ns SILICON N-Channel 7.4m Ω @ 80A, 10V 4V @ 40μA 4500pF @ 25V 56nC @ 10V 3ns 5 ns 20V 80A Tc 71 mJ 10V ±20V
    IPB90N06S404ATMA2 IPB90N06S404ATMA2 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 10mm ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant 4.4mm 9.25mm Surface Mount 1.946308g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 1 DRAIN Halogen Free Single 150W 30 ns 60V 150W Tc 90A 40 ns SILICON N-Channel 4m Ω @ 90A, 10V 4V @ 90μA 10400pF @ 25V 128nC @ 10V 70ns 5 ns 20V 60V 90A Tc 10V ±20V
    IPB80N08S406ATMA1 IPB80N08S406ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Obsolete 1 (Unlimited) 2 ROHS3 Compliant Contains Lead TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 80V 150W Tc 80A 0.0047Ohm SILICON N-Channel 5.5m Ω @ 80A, 10V 4V @ 90μA 4800pF @ 25V 70nC @ 10V 80A Tc 320A 270 mJ 10V ±20V
    IRFS38N20DPBF IRFS38N20DPBF Infineon Technologies $0.00
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    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 300W Tc SWITCHING 0.054Ohm 200V SILICON N-Channel 54m Ω @ 26A, 10V 5V @ 250μA 2900pF @ 25V 91nC @ 10V 43A 43A Tc 200V 180A 460 mJ 10V ±20V
    IRFR2607ZPBF IRFR2607ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 42A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.2606mm 6.22mm 22MOhm Surface Mount -55°C~175°C TJ 75V MOSFET (Metal Oxide) 1 Single 110W 14 ns 4V 110W Tc 42A 39 ns N-Channel 22m Ω @ 30A, 10V 4V @ 50μA 1440pF @ 25V 51nC @ 10V 59ns 28 ns 20V 75V 2 V 42A Tc 10V ±20V
    IPD60R385CPBTMA1 IPD60R385CPBTMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2011 OptiMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING 260 40 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 83W 10 ns 600V 83W Tc 9A SWITCHING 0.385Ohm 40 ns SILICON N-Channel 385m Ω @ 5.2A, 10V 3.5V @ 340μA 790pF @ 100V 22nC @ 10V 5ns 20V 9A 9A Tc 650V 27A 227 mJ 10V ±20V