Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Manufacturer Package Identifier | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Isolation Voltage | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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BSC016N03LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Not For New Designs | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | No SVHC | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 125W | 30V | 2.5W Ta 125W Tc | 100A | SWITCHING | 0.0023Ohm | SILICON | N-Channel | 1.6m Ω @ 30A, 10V | 2.2V @ 250μA | 10000pF @ 15V | 131nC @ 10V | 8.6ns | 20V | 32A | 32A Ta 100A Tc | 400A | 290 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLI3705NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 52A | 3 | AVALANCHE RATED | TO-220-3 Full Pack | No SVHC | 9.8mm | 12mOhm | Through Hole | -55°C~175°C TJ | 57V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 47W | 12 ns | 2V | 58W Tc | 140 ns | 52A | SWITCHING | 2kV | 37 ns | SILICON | N-Channel | 10m Ω @ 28A, 10V | 2V @ 250μA | 3600pF @ 25V | 98nC @ 5V | 140ns | 78 ns | 16V | 55V | 55V | 2 V | 52A Tc | 4V 10V | ±16V | |||||||||||||||||||||||||||||||
AUIRLR3410TRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 79W | 7.2 ns | 79W Tc | 17A | SWITCHING | 30 ns | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 17A Tc | 60A | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||
BSC190N12NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 17 ns | 120V | 69W Tc | 8.6A | SWITCHING | 22 ns | SILICON | N-Channel | 19m Ω @ 39A, 10V | 4V @ 42μA | 2300pF @ 60V | 34nC @ 10V | 16ns | 4 ns | 20V | 8.6A Ta 44A Tc | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
BSC011N03LSIATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 30V | 2.5W Ta 96W Tc | 37A | SWITCHING | SILICON | N-Channel | 1.1m Ω @ 30A, 10V | 2V @ 250μA | 4300pF @ 15V | 68nC @ 10V | 9.2ns | 20V | 37A Ta 100A Tc | 400A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFS7440TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 2.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 208W | 24 ns | 3V | 208W Tc | 120A | SWITCHING | 115 ns | SILICON | N-Channel | 2.5m Ω @ 100A, 10V | 3.9V @ 100μA | 4730pF @ 25V | 135nC @ 10V | 68ns | 68 ns | 20V | 40V | 3 V | 208A | 120A Tc | 772A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IPB60R380C6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Not For New Designs | 1 (Unlimited) | 2 | ROHS3 Compliant | Contains Lead | HIGH VOLTAGE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 83W | 15 ns | 600V | 83W Tc | 10.6A | SWITCHING | 0.38Ohm | 110 ns | SILICON | N-Channel | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 700pF @ 100V | 32nC @ 10V | 10ns | 9 ns | 20V | 10.6A Tc | 30A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFS52N15DTRLP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | R-PSSO-G2 | 1 | DRAIN | Single | 3.8W | 16 ns | 3.8W Ta 230W Tc | 60A | SWITCHING | 28 ns | SILICON | N-Channel | 32m Ω @ 36A, 10V | 5V @ 250μA | 2770pF @ 25V | 89nC @ 10V | 47ns | 25 ns | 30V | 150V | 150V | 5 V | 51A Tc | 240A | 470 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
IPD90P03P404ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | OptiMOS™ | Not For New Designs | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 35 ns | -30V | 137W Tc | 90A | 0.0045Ohm | 70 ns | SILICON | P-Channel | 4.5m Ω @ 90A, 10V | 4V @ 253μA | 10300pF @ 25V | 130nC @ 10V | 10ns | 20 ns | 20V | 90A Tc | 30V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRL7833STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.826mm | 9.65mm | 3.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 18 ns | 140W Tc | 150A | SWITCHING | 21 ns | SILICON | N-Channel | 3.8m Ω @ 38A, 10V | 2.3V @ 250μA | 4170pF @ 15V | 47nC @ 4.5V | 50ns | 6.9 ns | 20V | 30V | 75A | 150A Tc | 600A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF8010STRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2003 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | Tin | 80A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 15mOhm | Surface Mount | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | DRAIN | Single | 260W | 15 ns | 4V | 260W Tc | 80A | SWITCHING | 61 ns | SILICON | N-Channel | 15m Ω @ 45A, 10V | 4V @ 250μA | 3830pF @ 25V | 120nC @ 10V | 130ns | 120 ns | 20V | 100V | 100V | 4 V | 75A | 80A Tc | 10V | ±20V | |||||||||||||||||||||||||||||
IRF7580MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Lead Free | 10 | DirectFET™ Isometric ME | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 1 | Single | 115W | 20 ns | 115W Tc | 114A | 53 ns | N-Channel | 3.6m Ω @ 70A, 10V | 3.7V @ 150μA | 6510pF @ 25V | 180nC @ 10V | 38ns | 21 ns | 20V | 114A Tc | 60V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPB47N10SL26ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2001 | SIPMOS® | Last Time Buy | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 175W | 50 ns | 100V | 175W Tc | 47A | 0.04Ohm | SILICON | N-Channel | 26m Ω @ 33A, 10V | 2V @ 2mA | 2500pF @ 25V | 135nC @ 10V | 100ns | 70 ns | 20V | 47A Tc | 400 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSC016N06NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Cut Tape (CT) | 2012 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F3 | 1 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 19 ns | 60V | 2.5W Ta 139W Tc | 30A | 150°C | SWITCHING | 35 ns | SILICON | N-Channel | 1.6m Ω @ 50A, 10V | 2.8V @ 95μA | 5200pF @ 30V | 71nC @ 10V | 9ns | 9 ns | 20V | 60V | 30A Ta 100A Tc | 400A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||
BSC009NE2LS5IATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | yes | Active | 1 (Unlimited) | 5 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | 1.1mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | R-PDSO-F5 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | 5 ns | 25V | 2.5W Ta 74W Tc | 40A | 150°C | SWITCHING | 27 ns | SILICON | N-Channel | 0.95m Ω @ 30A, 10V | 2V @ 250μA | 3200pF @ 12V | 49nC @ 10V | 33ns | 19 ns | 16V | 25V | 40A Ta 100A Tc | 400A | 50 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
IRFS7537TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | 9.65mm | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 230W | 15 ns | 230W Tc | 173A | SWITCHING | 60V | 82 ns | SILICON | N-Channel | 3.3m Ω @ 100A, 10V | 3.7V @ 150μA | 7020pF @ 25V | 210nC @ 10V | 105ns | 84 ns | 20V | 173A Tc | 60V | 700A | 554 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFS3307ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.572mm | 9.652mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 230W | 26 ns | 230W Tc | 120A | SWITCHING | 0.0058Ohm | 51 ns | SILICON | N-Channel | 5.8m Ω @ 75A, 10V | 4V @ 150μA | 4750pF @ 50V | 110nC @ 10V | 64ns | 65 ns | 20V | 75V | 120A Tc | 480A | 140 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IPB60R180P7ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 72W Tc | SWITCHING | 0.18Ohm | 600V | SILICON | N-Channel | 180m Ω @ 5.6A, 10V | 4V @ 280μA | 1081pF @ 400V | 25nC @ 10V | 18A Tc | 600V | 53A | 56 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRF6216TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 4.9784mm | ROHS3 Compliant | Lead Free | Tin | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 3.9878mm | 240mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | 1 | 1 | Single | 2.5W | 18 ns | -5V | 2.5W Ta | 120 ns | -2.2A | 150°C | SWITCHING | 33 ns | SILICON | P-Channel | 240m Ω @ 1.3A, 10V | 5V @ 250μA | 1280pF @ 25V | 49nC @ 10V | 15ns | 26 ns | 20V | -150V | 150V | 5 V | 2.2A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||
IRFS7734TRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Single | 20 ns | 290W Tc | 183A | SWITCHING | 124 ns | SILICON | N-Channel | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 10150pF @ 25V | 270nC @ 10V | 123ns | 100 ns | 20V | 75V | 183A Tc | 650A | 670 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
AUIRFS4310ZTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W | 20 ns | 250W Tc | 120A | SWITCHING | 0.006Ohm | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 120A Tc | 560A | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPB027N10N5ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2015 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 3.949996g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 26 ns | 100V | 250W Tc | 120A | SWITCHING | 0.0027Ohm | 52 ns | SILICON | N-Channel | 2.7m Ω @ 100A, 10V | 3.8V @ 184μA | 10300pF @ 50V | 139nC @ 10V | 15ns | 17 ns | 20V | 100V | 120A Tc | 480A | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRLML9301TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 64MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | IRLML9301TRPBF | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Other Transistors | 1 | Single | 1.3W | 9.6 ns | -2.4V | 1.3W Ta | 21 ns | -3.6A | 150°C | SWITCHING | 16 ns | SILICON | P-Channel | 64m Ω @ 3.6A, 10V | 2.4V @ 10μA | 388pF @ 25V | 4.8nC @ 4.5V | 19ns | 15 ns | 20V | -30V | -1.3 V | 3.6A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
IPI045N10N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 214W | 27 ns | 100V | 214W Tc | 100A | SWITCHING | 0.0045Ohm | 48 ns | SILICON | N-Channel | 4.5m Ω @ 100A, 10V | 3.5V @ 150μA | 8410pF @ 50V | 117nC @ 10V | 59ns | 14 ns | 20V | 100A Tc | 400A | 340 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BSD314SPEH6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | EAR99 | 2mm | ROHS3 Compliant | Lead Free | Tin | 6 | 6-VSSOP, SC-88, SOT-363 | 800μm | 1.25mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | Single | 5.1 ns | -30V | 500mW Ta | 1.5A | 12.4 ns | P-Channel | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 294pF @ 15V | 2.9nC @ 10V | 3.9ns | 20V | 1.5A Ta | 30V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SPD04P10PGBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | SIPMOS® | no | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Not Halogen Free | 38W | 5.7 ns | -100V | 38W Tc | 4A | 14 ns | SILICON | P-Channel | 1 Ω @ 2.8A, 10V | 4V @ 380μA | 319pF @ 25V | 12nC @ 10V | 8.6ns | 4.5 ns | 20V | 4A | 4A Tc | 100V | 57 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IPD14N06S280ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.5mm | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | not_compliant | 2.5mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | 1 | DRAIN | Halogen Free | Single | 47W | 6 ns | 2.1V | 55V | 47W Tc | 17A | 175°C | 0.08Ohm | 15 ns | SILICON | N-Channel | 80m Ω @ 7A, 10V | 4V @ 14μA | 293pF @ 25V | 10nC @ 10V | 17ns | 20 ns | 20V | 55V | 17A Tc | 68A | 10V | ±20V | ||||||||||||||||||||||||||||||||
BSC13DN30NSFDATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Tape & Reel (TR) | 2013 | OptiMOS™ | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | SWITCHING | 0.13Ohm | 300V | SILICON | N-Channel | 130m Ω @ 16A, 10V | 4V @ 90μA | 2450pF @ 150V | 30nC @ 10V | 16A | 16A Tc | 300V | 64A | 56 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSC059N04LSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | No | 8 | LOGIC LEVEL COMPATIBLE | 8-PowerTDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | 8 | R-PDSO-F5 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 50W | 5.6 ns | 40V | 2.5W Ta 50W Tc | 73A | SWITCHING | 0.0059Ohm | 23 ns | SILICON | N-Channel | 5.9m Ω @ 50A, 10V | 2V @ 23μA | 3200pF @ 20V | 40nC @ 10V | 3.4ns | 3.8 ns | 20V | 16A | 16A Ta 73A Tc | 292A | 25 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSZ034N04LSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | S-PDSO-N3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 2.1W Ta 52W Tc | 40A | SWITCHING | 0.0046Ohm | SILICON | N-Channel | 3.4m Ω @ 20A, 10V | 2V @ 250μA | 1800pF @ 20V | 25nC @ 10V | 4ns | 20V | 19A | 19A Ta 40A Tc | 160A | 70 mJ | 4.5V 10V | ±20V |
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